52 Flash Memory 31

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Ready or Busy	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Maximum Write Cycle Time (tWC)	Memory Density	Minimum Supply Voltage (Vsup)	Page Size (words)	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
MT29F256G08AUAAAC5-IT:A	Micron Technology	FLASH	INDUSTRIAL	52	LGA		PLASTIC/EPOXY	YES		CMOS	NO LEAD	PARALLEL		1M	50 mA			NO	3/3.3		GRID ARRAY	LGA52(UNSPEC)	Flash Memories		85 Cel			-40 Cel	32K	YES	YES	BOTTOM					Not Qualified		274877906944 bit		8K			SLC NAND TYPE	.00001 Amp		20 ns		NO
MT29F256G08AUAAAC5:A	Micron Technology	FLASH	COMMERCIAL	52	LGA		PLASTIC/EPOXY	YES		CMOS	NO LEAD	PARALLEL		1M	50 mA			NO	3/3.3		GRID ARRAY	LGA52(UNSPEC)	Flash Memories		70 Cel			0 Cel	32K	YES	YES	BOTTOM					Not Qualified		274877906944 bit		8K			SLC NAND TYPE	.00001 Amp		20 ns		NO
MT29F128G08AKAAAC5-IT:A	Micron Technology	FLASH	INDUSTRIAL	52	LGA		PLASTIC/EPOXY	YES		CMOS	NO LEAD	PARALLEL		1M	50 mA	17179869184 words		NO	3/3.3	8	GRID ARRAY	LGA52(UNSPEC)	Flash Memories		85 Cel	16GX8	16G	-40 Cel	16K	YES	YES	BOTTOM					Not Qualified		137438953472 bit		8K			SLC NAND TYPE	.00001 Amp		20 ns		NO
MT29F128G08AKAAAC5:A	Micron Technology	FLASH	COMMERCIAL	52	LGA		PLASTIC/EPOXY	YES		CMOS	NO LEAD	PARALLEL		1M	50 mA	17179869184 words		NO	3/3.3	8	GRID ARRAY	LGA52(UNSPEC)	Flash Memories		70 Cel	16GX8	16G	0 Cel	16K	YES	YES	BOTTOM					Not Qualified		137438953472 bit		8K			SLC NAND TYPE	.00001 Amp		20 ns		NO
MT29F128G08AMAAAC5:A	Micron Technology	FLASH	COMMERCIAL	52	LGA		PLASTIC/EPOXY	YES		CMOS	NO LEAD	PARALLEL		1M	50 mA	17179869184 words		NO	3/3.3	8	GRID ARRAY	LGA52(UNSPEC)	Flash Memories		70 Cel	16GX8	16G	0 Cel	16K	YES	YES	BOTTOM					Not Qualified		137438953472 bit		8K			SLC NAND TYPE	.00001 Amp		20 ns		NO
MT29F128G08AMAAAC5-IT:A	Micron Technology	FLASH	INDUSTRIAL	52	LGA		PLASTIC/EPOXY	YES		CMOS	NO LEAD	PARALLEL		1M	50 mA	17179869184 words		NO	3/3.3	8	GRID ARRAY	LGA52(UNSPEC)	Flash Memories		85 Cel	16GX8	16G	-40 Cel	16K	YES	YES	BOTTOM					Not Qualified		137438953472 bit		8K			SLC NAND TYPE	.00001 Amp		20 ns		NO
MT29F128G08AKAAAC5-Z:A	Micron Technology	FLASH	COMMERCIAL	52	LGA		PLASTIC/EPOXY	YES		CMOS	NO LEAD	PARALLEL		1M	50 mA	17179869184 words		NO	3/3.3	8	GRID ARRAY	LGA52(UNSPEC)	Flash Memories		70 Cel	16GX8	16G	0 Cel	16K	YES	YES	BOTTOM					Not Qualified		137438953472 bit		8K			SLC NAND TYPE	.00001 Amp		20 ns		NO
MT29F128G08AKAAAC5-ITZ:A	Micron Technology	FLASH	INDUSTRIAL	52	LGA		PLASTIC/EPOXY	YES		CMOS	NO LEAD	PARALLEL		1M	50 mA	17179869184 words		NO	3/3.3	8	GRID ARRAY	LGA52(UNSPEC)	Flash Memories		85 Cel	16GX8	16G	-40 Cel	16K	YES	YES	BOTTOM					Not Qualified		137438953472 bit		8K			SLC NAND TYPE	.00001 Amp		20 ns		NO
MT29F128G08AMAAAC5-Z:A	Micron Technology	FLASH	COMMERCIAL	52	LGA		PLASTIC/EPOXY	YES		CMOS	NO LEAD	PARALLEL		1M	50 mA	17179869184 words		NO	3/3.3	8	GRID ARRAY	LGA52(UNSPEC)	Flash Memories		70 Cel	16GX8	16G	0 Cel	16K	YES	YES	BOTTOM					Not Qualified		137438953472 bit		8K			SLC NAND TYPE	.00001 Amp		20 ns		NO
MT29F128G08AMAAAC5-ITZ:A	Micron Technology	FLASH	INDUSTRIAL	52	LGA		PLASTIC/EPOXY	YES		CMOS	NO LEAD	PARALLEL		1M	50 mA	17179869184 words		NO	3/3.3	8	GRID ARRAY	LGA52(UNSPEC)	Flash Memories		85 Cel	16GX8	16G	-40 Cel	16K	YES	YES	BOTTOM					Not Qualified		137438953472 bit		8K			SLC NAND TYPE	.00001 Amp		20 ns		NO
MT29F256G08AUAAAC5-ITZ:A	Micron Technology	FLASH	INDUSTRIAL	52	LGA		PLASTIC/EPOXY	YES		CMOS	NO LEAD	PARALLEL		1M	50 mA			NO	3/3.3		GRID ARRAY	LGA52(UNSPEC)	Flash Memories		85 Cel			-40 Cel	32K	YES	YES	BOTTOM					Not Qualified		274877906944 bit		8K			SLC NAND TYPE	.00001 Amp		20 ns		NO
MT29F128G08CEAAAC5:A	Micron Technology	FLASH	COMMERCIAL	52	VFLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	ASYNCHRONOUS			17179869184 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				70 Cel	16GX8	16G	0 Cel				BOTTOM	R-PBGA-B52	3.6 V	1 mm	14 mm			137438953472 bit	2.7 V		30	260	MLC NAND TYPE		18 mm		2.7
MT29F256G08CMAAAC5:A	Micron Technology	FLASH	COMMERCIAL	52	VFLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	ASYNCHRONOUS			34359738368 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				70 Cel	32GX8	32G	0 Cel				BOTTOM	R-PBGA-B52	3.6 V	1 mm	14 mm			274877906944 bit	2.7 V		30	260	MLC NAND TYPE		18 mm		2.7
MT29F512G08CUAAAC5:A	Micron Technology	FLASH	COMMERCIAL	52	VFLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	ASYNCHRONOUS			68719476736 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				70 Cel	64GX8	64G	0 Cel				BOTTOM	R-PBGA-B52	3.6 V	1 mm	14 mm			549755813888 bit	2.7 V		30	260	MLC NAND TYPE		18 mm		2.7
MT29F128G08AUABAC5:B	Micron Technology	FLASH	COMMERCIAL	52	VFLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	ASYNCHRONOUS			17179869184 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				70 Cel	16GX8	16G	0 Cel				BOTTOM	R-PBGA-B52	3.6 V	1 mm	14 mm			137438953472 bit	2.7 V		30	260	MLC NAND TYPE		18 mm		2.7
MT29F128G08AUABAC5-IT:B	Micron Technology	FLASH	INDUSTRIAL	52	VFLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	ASYNCHRONOUS			17179869184 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				85 Cel	16GX8	16G	-40 Cel				BOTTOM	R-PBGA-B52	3.6 V	1 mm	14 mm			137438953472 bit	2.7 V		30	260	MLC NAND TYPE		18 mm		2.7
MT29F64G08AKABAC5:B	Micron Technology	FLASH	COMMERCIAL	52	VFLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	ASYNCHRONOUS			8589934592 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				70 Cel	8GX8	8G	0 Cel				BOTTOM	R-PBGA-B52	3.6 V	1 mm	14 mm			68719476736 bit	2.7 V		30	260	SLC NAND TYPE		18 mm		2.7
MT29F64G08AKABAC5-IT:B	Micron Technology	FLASH	INDUSTRIAL	52	VFLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	ASYNCHRONOUS			8589934592 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				85 Cel	8GX8	8G	-40 Cel				BOTTOM	R-PBGA-B52	3.6 V	1 mm	14 mm			68719476736 bit	2.7 V		30	260	SLC NAND TYPE		18 mm		2.7
MT29F64G08AMABAC5-IT:B	Micron Technology	FLASH	INDUSTRIAL	52	VFLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	ASYNCHRONOUS			8589934592 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				85 Cel	8GX8	8G	-40 Cel				BOTTOM	R-PBGA-B52	3.6 V	1 mm	14 mm			68719476736 bit	2.7 V		30	260	SLC NAND TYPE		18 mm		2.7
MTFDDAT120MAV-1AE12ABYY	Micron Technology	FLASH	COMMERCIAL	52	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD										UNCASED CHIP											UPPER	R-XUUC-N52		3.7 mm	29.85 mm								MLC NAND TYPE		50.8 mm		3.3
MTFDDAT240MAV-1AE12ABYY	Micron Technology	FLASH	COMMERCIAL	52	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD										UNCASED CHIP											UPPER	R-XUUC-N52		3.7 mm	29.85 mm								MLC NAND TYPE		50.8 mm		3.3
PSD813F1VA-15J	STMicroelectronics	FLASH	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	SYNCHRONOUS			131072 words	3.3			8	CHIP CARRIER			1.27 mm	70 Cel	128KX8	128K	0 Cel				QUAD	S-PQCC-J52	3.6 V	4.57 mm	19 mm	Not Qualified	10 ms	1048576 bit	3 V				NOR TYPE		19.1 mm	15 ns	3.3
PSD813F1VA-15M	STMicroelectronics	FLASH	COMMERCIAL	52	LQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS			131072 words	3.3			8	FLATPACK, LOW PROFILE			.8 mm	70 Cel	128KX8	128K	0 Cel				QUAD	S-PQFP-G52	3.6 V	1.54 mm	14 mm	Not Qualified	10 ms	1048576 bit	3 V				NOR TYPE		14 mm	15 ns	3.3
PSD813F1VA-20UI	STMicroelectronics	FLASH	INDUSTRIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	SYNCHRONOUS			131072 words	3.3			8	CHIP CARRIER			1.27 mm	85 Cel	128KX8	128K	-40 Cel				QUAD	S-PQCC-J52	3.6 V	4.57 mm	19 mm	Not Qualified	10 ms	1048576 bit	3 V				NOR TYPE		19.1 mm	20 ns	3.3
MTFDDAT064SBD-1AK12ITYY	Micron Technology	FLASH MODULE	INDUSTRIAL	52	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	SERIAL	ASYNCHRONOUS			68719476736 words	3.3			8	MICROELECTRONIC ASSEMBLY				85 Cel	64GX8	64G	-40 Cel				DUAL	R-XDMA-N52	3.46 V	2.4 mm	29.85 mm			549755813888 bit	3.14 V				SLC NAND TYPE		50.8 mm		3.3
SQF-SMSM4-128G-SBC	Advantech	FLASH MODULE	COMMERCIAL	52		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	SERIAL				137438953472 words				8	MICROELECTRONIC ASSEMBLY				70 Cel	128GX8	128G	0 Cel				SINGLE	R-XSMA-N52		4.2 mm	30 mm			1099511627776 bit					MLC NAND TYPE		50.8 mm
SQF-SMSM2-64G-SBE	Advantech	FLASH MODULE	INDUSTRIAL	52		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	SERIAL				68719476736 words				8	MICROELECTRONIC ASSEMBLY				85 Cel	64GX8	64G	-40 Cel				SINGLE	R-XSMA-N52		4.2 mm	30 mm			549755813888 bit					MLC NAND TYPE		50.8 mm
SQF-SMSM4-256G-SBC	Advantech	FLASH MODULE	COMMERCIAL	52		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	SERIAL				274877906944 words				8	MICROELECTRONIC ASSEMBLY				70 Cel	256GX8	256G	0 Cel				SINGLE	R-XSMA-N52		4.2 mm	30 mm			2199023255552 bit					MLC NAND TYPE		50.8 mm
SQF-SMSM2-64G-SBC	Advantech	FLASH MODULE	COMMERCIAL	52		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	SERIAL				68719476736 words				8	MICROELECTRONIC ASSEMBLY				70 Cel	64GX8	64G	0 Cel				SINGLE	R-XSMA-N52		4.2 mm	30 mm			549755813888 bit					MLC NAND TYPE		50.8 mm
SQF-SMSM4-256G-SBE	Advantech	FLASH MODULE	INDUSTRIAL	52		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	SERIAL				274877906944 words				8	MICROELECTRONIC ASSEMBLY				85 Cel	256GX8	256G	-40 Cel				SINGLE	R-XSMA-N52		4.2 mm	30 mm			2199023255552 bit					MLC NAND TYPE		50.8 mm
SQF-SMSM4-512G-SBE	Advantech	FLASH MODULE	INDUSTRIAL	52		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	SERIAL				549755813888 words				8	MICROELECTRONIC ASSEMBLY				85 Cel	512GX8	512G	-40 Cel				SINGLE	R-XSMA-N52		4.2 mm	30 mm			4398046511104 bit					MLC NAND TYPE		50.8 mm

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.