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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Maximum Write Cycle Time (tWC)	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
JS28F640J3F75G	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		128K	54 mA	4194304 words		NO	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		4MX16	4M	-40 Cel	64	YES		YES	DUAL	R-PDSO-G56						Not Qualified			67108864 bit			4/8				NOR TYPE	.00012 Amp		YES	75 ns		NO
JS28F640P33TF70A	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		16K,64K	28 mA	4194304 words		NO	2.5/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20		Flash Memories		.5 mm	85 Cel		4MX16	4M	-40 Cel	4,63	YES			DUAL	R-PDSO-G56						Not Qualified		TOP	67108864 bit			8				NOR TYPE	.002 Amp		YES	70 ns		NO
JS48F4400P0VB00A	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		16K,64K	51 mA	33554432 words		NO	1.8,1.8/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20		Flash Memories		.5 mm	85 Cel		32MX16	32M	-40 Cel	8, 510	YES			DUAL	R-PDSO-G56						Not Qualified		BOTTOM	536870912 bit			4				NOR TYPE	.000005 Amp		YES	95 ns		NO
JS28F320J3F75E	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		128K	80 mA	2097152 words		NO	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		2MX16	2M	-40 Cel	32	YES		YES	DUAL	R-PDSO-G56						Not Qualified			33554432 bit			4/8		30	260	NOR TYPE	.00012 Amp		YES	75 ns		NO
JS28F128J3F75H	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		128K	80 mA	8388608 words		NO	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		8MX16	8M	-40 Cel	128	YES		YES	DUAL	R-PDSO-G56						Not Qualified			134217728 bit			4/8		30	260	NOR TYPE	.00012 Amp		YES	75 ns		NO
JS28F640P30BF75A	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		16K,64K	50 mA	4194304 words		NO	1.8,1.8/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20		Flash Memories		.5 mm	85 Cel		4MX16	4M	-40 Cel	4,63	YES			DUAL	R-PDSO-G56						Not Qualified		BOTTOM	67108864 bit			8		30	260	NOR TYPE	.000055 Amp		YES	75 ns		NO
JS28F640P30BF75D	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		16K,64K	50 mA	4194304 words		NO	1.8,1.8/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20		Flash Memories		.5 mm	85 Cel		4MX16	4M	-40 Cel	4,63	YES			DUAL	R-PDSO-G56						Not Qualified		BOTTOM	67108864 bit			8				NOR TYPE	.000055 Amp		YES	75 ns		NO
JS28F640P30TF75A	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		16K,64K	50 mA	4194304 words		NO	1.8,1.8/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20		Flash Memories		.5 mm	85 Cel		4MX16	4M	-40 Cel	4,63	YES			DUAL	R-PDSO-G56						Not Qualified		TOP	67108864 bit			8				NOR TYPE	.000055 Amp		YES	75 ns		NO
JS28F00AP30TFA	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		16K,64K	31 mA	67108864 words		NO	1.8,1.8/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20		Flash Memories		.5 mm	85 Cel		64MX16	64M	-40 Cel	4,1023	YES			DUAL	R-PDSO-G56						Not Qualified		TOP	1073741824 bit			16				NOR TYPE	.00024 Amp		YES	110 ns		NO
M29W128GSH70N6E	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		128K	20 mA	8388608 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		8MX16	8M	-40 Cel	128	YES		YES	DUAL	R-PDSO-G56						Not Qualified			134217728 bit			8/16				NOR TYPE	.0001 Amp		YES	70 ns		YES
M29W128GSL70N6E	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		128K	20 mA	8388608 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		8MX16	8M	-40 Cel	128	YES		YES	DUAL	R-PDSO-G56						Not Qualified			134217728 bit			8/16				NOR TYPE	.0001 Amp		YES	70 ns		YES
JS28F128P30BF75A	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	16K,64K	50 mA	8388608 words	1.8	NO	1.8,1.8/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20		Flash Memories		.5 mm	85 Cel		8MX16	8M	-40 Cel	4,127	YES	MATTE TIN		DUAL	R-PDSO-G56		2 V	1.2 mm		14 mm	Not Qualified		BOTTOM	134217728 bit	1.7 V		8	e3			NOR TYPE	.000055 Amp	18.4 mm	YES	75 ns	1.8	NO
JS28F064M29EWHA	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	64K	25 mA	4194304 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		4MX16	4M	-40 Cel	128	YES	Matte Tin (Sn)	YES	DUAL	R-PDSO-G56		3.6 V	1.2 mm		14 mm	Not Qualified			67108864 bit	2.7 V		8/16	e3	30	260	NOR TYPE	.00012 Amp	18.4 mm	YES	70 ns	3	YES
JS28F128P30TF75A	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	16K,64K	50 mA	8388608 words	1.8	NO	1.8,1.8/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20		Flash Memories		.5 mm	85 Cel		8MX16	8M	-40 Cel	4,127	YES	MATTE TIN		DUAL	R-PDSO-G56		2 V	1.2 mm		14 mm	Not Qualified		TOP	134217728 bit	1.7 V		8	e3			NOR TYPE	.000055 Amp	18.4 mm	YES	75 ns	1.8	NO
JS28F064M29EWBA	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	25 mA	4194304 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES	MATTE TIN	YES	DUAL	R-PDSO-G56		3.6 V	1.2 mm		14 mm	Not Qualified		BOTTOM	67108864 bit	2.7 V		8/16	e3			NOR TYPE	.00012 Amp	18.4 mm	YES	70 ns	3	YES
MX29GL128FHT2I-70G	Macronix	FLASH	INDUSTRIAL	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	100 mA	8388608 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		8MX16	8M	-40 Cel	128	YES	MATTE TIN	YES	DUAL	R-PDSO-G56	3	3.6 V	1.2 mm		14 mm	Not Qualified			134217728 bit	2.7 V		8/16	e3			NOR TYPE	.00003 Amp	18.4 mm	YES	70 ns	3	YES
JS28F128P33TF70A	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,64K	28 mA	8388608 words	3	NO	2.5/3,3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20		Flash Memories		.5 mm	85 Cel		8MX16	8M	-40 Cel	4,127	YES	MATTE TIN		DUAL	R-PDSO-G56		3.6 V	1.2 mm		14 mm	Not Qualified		TOP	134217728 bit	2.3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	8	e3			NOR TYPE	.002 Amp	18.4 mm	YES	70 ns	3	NO
JS28F256P33BFE	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	16777216 words	3	NO	2.5/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20		Flash Memories		.5 mm	85 Cel		16MX16	16M	-40 Cel	4,255	YES	MATTE TIN		DUAL	R-PDSO-G56		3.6 V	1.2 mm		14 mm	Not Qualified		BOTTOM	268435456 bit	2.3 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE		e3			NOR TYPE	.00021 Amp	18.4 mm	YES	105 ns	2.7	NO
M29W256GH70N3E	Micron Technology	FLASH	AUTOMOTIVE	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			16777216 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	125 Cel		16MX16	16M	-40 Cel			MATTE TIN		DUAL	R-PDSO-G56		3.6 V	1.2 mm		14 mm			BOTTOM/TOP	268435456 bit	2.7 V			e3			NOR TYPE		18.4 mm		70 ns	3
M29DW256G70NF6E	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			16777216 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	85 Cel		16MX16	16M	-40 Cel			MATTE TIN		DUAL	R-PDSO-G56		3.6 V	1.2 mm		14 mm				268435456 bit	2.7 V			e3					18.4 mm		70 ns	3
M29DW256G7ANF6E	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			16777216 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	85 Cel		16MX16	16M	-40 Cel			MATTE TIN		DUAL	R-PDSO-G56		3.6 V	1.2 mm		14 mm				268435456 bit	2.7 V			e3					18.4 mm		70 ns	3
JS28F512M29EWHA	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	31 mA	33554432 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		32MX16	32M	-40 Cel	512	YES	MATTE TIN	YES	DUAL	R-PDSO-G56		3.6 V	1.2 mm		14 mm	Not Qualified			536870912 bit	2.7 V		16/32	e3	30	260	NOR TYPE	.000225 Amp	18.4 mm	YES	110 ns	2.7	YES
JS28F064M29EWLA	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	64K	25 mA	4194304 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		4MX16	4M	-40 Cel	128	YES	Matte Tin (Sn)	YES	DUAL	R-PDSO-G56		3.6 V	1.2 mm		14 mm	Not Qualified			67108864 bit	2.7 V		8/16	e3	30	260	NOR TYPE	.00012 Amp	18.4 mm	YES	75 ns	3	YES
JS28F064M29EWTA	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	25 mA	4194304 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES	MATTE TIN	YES	DUAL	R-PDSO-G56		3.6 V	1.2 mm		14 mm	Not Qualified		TOP	67108864 bit	2.7 V		8/16	e3			NOR TYPE	.00012 Amp	18.4 mm	YES	75 ns	3	YES
JS28F128M29EWHF	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	25 mA	8388608 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		8MX16	8M	-40 Cel	128	YES	Matte Tin (Sn)	YES	DUAL	R-PDSO-G56		3.6 V	1.2 mm		14 mm	Not Qualified			134217728 bit	2.7 V		8/16	e3	30	260	NOR TYPE	.00012 Amp	18.4 mm	YES	75 ns	3	YES
JS28F128M29EWLA	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	25 mA	8388608 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		8MX16	8M	-40 Cel	128	YES	MATTE TIN	YES	DUAL	R-PDSO-G56		3.6 V	1.2 mm		14 mm	Not Qualified			134217728 bit	2.7 V	UNIFORM BLOCK	8/16	e3			NOR TYPE	.00012 Amp	18.4 mm	YES	75 ns	3	YES
JS28F128P33BF70A	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	16K,64K	28 mA	8388608 words	3	NO	2.5/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20		Flash Memories		.5 mm	85 Cel		8MX16	8M	-40 Cel	4,127	YES			DUAL	R-PDSO-G56		3.6 V	1.2 mm		14 mm	Not Qualified		BOTTOM	134217728 bit	2.3 V		8		30	260	NOR TYPE	.002 Amp	18.4 mm	YES	20 ns	3	NO
M29W512GH7AN6E	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	SYNCHRONOUS			33554432 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	85 Cel		32MX16	32M	-40 Cel			MATTE TIN		DUAL	R-PDSO-G56		3.6 V	1.2 mm		14 mm				536870912 bit	2.7 V			e3					18.4 mm		80 ns	2.7
JS28F640P33BF70A	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,64K	28 mA	4194304 words	3	NO	2.5/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20		Flash Memories		.5 mm	85 Cel		4MX16	4M	-40 Cel	4,63	YES	MATTE TIN		DUAL	R-PDSO-G56		3.6 V	1.2 mm		14 mm	Not Qualified		BOTTOM	67108864 bit	2.3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	8	e3			NOR TYPE	.002 Amp	18.4 mm	YES	70 ns	3	NO
JS28F00AP33EFA	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS			67108864 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	85 Cel		64MX16	64M	-40 Cel			Matte Tin (Sn)		DUAL	R-PDSO-G56		3.6 V	1.2 mm		14 mm				1073741824 bit	2.3 V	IT ALSO OPERATES IN ASYNCHRONOUS MODE		e3	30	260			18.4 mm		105 ns	3
JS28F00AP33TFA	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS			67108864 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	85 Cel		64MX16	64M	-40 Cel			Matte Tin (Sn)		DUAL	R-PDSO-G56		3.6 V	1.2 mm		14 mm			TOP	1073741824 bit	2.3 V	TOP BOOT; IT ALSO OPERATES IN ASYNCHRONOUS MODE		e3	30	260			18.4 mm		105 ns	3
JS28F512P33BFD	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS			33554432 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	85 Cel		32MX16	32M	-40 Cel			MATTE TIN		DUAL	R-PDSO-G56		3.6 V	1.2 mm		14 mm			BOTTOM	536870912 bit	2.3 V	BOTTOM BOOT; IT ALSO OPERATES IN ASYNCHRONOUS MODE		e3					18.4 mm		105 ns	3
JS28F512P33EFA	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		31 mA	33554432 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	85 Cel		32MX16	32M	-40 Cel			Matte Tin (Sn)		DUAL	R-PDSO-G56		3.6 V	1.2 mm		14 mm				536870912 bit	2.3 V	IT ALSO OPERATES IN ASYNCHRONOUS MODE		e3	30	260	NOR TYPE		18.4 mm		105 ns	3
JS28F512P33TFA	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS			33554432 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	85 Cel		32MX16	32M	-40 Cel			MATTE TIN		DUAL	R-PDSO-G56		3.6 V	1.2 mm		14 mm			TOP	536870912 bit	2.3 V	TOP BOOT; IT ALSO OPERATES IN ASYNCHRONOUS MODE		e3					18.4 mm		105 ns	3
M29W512GH70N3E	Micron Technology	FLASH	AUTOMOTIVE	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS			33554432 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	125 Cel		32MX16	32M	-40 Cel					DUAL	R-PDSO-G56		3.6 V	1.2 mm		14 mm				536870912 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			18.4 mm		80 ns	2.7
JS28F640J3F75A	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	54 mA	4194304 words	3	NO	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		4MX16	4M	-40 Cel	64	YES	Matte Tin (Sn)	YES	DUAL	R-PDSO-G56		3.6 V	1.2 mm		14 mm	Not Qualified			67108864 bit	2.7 V		4/8	e3	30	260	NOR TYPE	.00012 Amp	18.4 mm	YES	75 ns	2.7	NO
JS28F640J3F75B	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	54 mA	4194304 words	3	NO	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		4MX16	4M	-40 Cel	64	YES	Matte Tin (Sn)	YES	DUAL	R-PDSO-G56		3.6 V	1.2 mm		14 mm	Not Qualified			67108864 bit	2.7 V		4/8	e3	30	260	NOR TYPE	.00012 Amp	18.4 mm	YES	75 ns	2.7	NO
JS28F640J3F75E	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	54 mA	4194304 words	3	NO	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		4MX16	4M	-40 Cel	64	YES	Matte Tin (Sn)	YES	DUAL	R-PDSO-G56		3.6 V	1.2 mm		14 mm	Not Qualified			67108864 bit	2.7 V		4/8	e3	30	260	NOR TYPE	.00012 Amp	18.4 mm	YES	75 ns	2.7	NO
JS28F00AM29EWHA	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	31 mA	67108864 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		64MX16	64M	-40 Cel	1K	YES	Nickel/Palladium/Gold (Ni/Pd/Au)	YES	DUAL	R-PDSO-G56		3.6 V	1.2 mm		14 mm	Not Qualified			1073741824 bit	2.7 V		16/32	e4	30	260	NOR TYPE	.00024 Amp	18.4 mm	YES	110 ns	3	YES
M58LW032D110N6	STMicroelectronics	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	30 mA	2097152 words	3	NO	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		2MX16	2M	-40 Cel	32	YES		YES	DUAL	R-PDSO-G56		3.6 V	1.2 mm		14 mm	Not Qualified			33554432 bit	2.7 V		4/8	e0	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00004 Amp	18.4 mm	YES	110 ns	3	NO
MT28F128J3RG-12MET	Micron Technology	FLASH	INDUSTRIAL	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	80 mA	8388608 words	3	NO	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		8MX16	8M	-40 Cel	128	YES	TIN LEAD	YES	DUAL	R-PDSO-G56		3.6 V	1.2 mm		14 mm	Not Qualified			134217728 bit	2.7 V		4/8	e0			NOR TYPE	.00012 Amp	18.4 mm	YES	120 ns	2.7	NO
MT28F128J3RP-12ET	Micron Technology	FLASH	INDUSTRIAL	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	80 mA	8388608 words	3	NO	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		8MX16	8M	-40 Cel	128	YES	MATTE TIN	YES	DUAL	R-PDSO-G56		3.6 V	1.2 mm		14 mm	Not Qualified			134217728 bit	2.7 V		4/8	e3		260	NOR TYPE	.00012 Amp	18.4 mm	YES	120 ns	2.7	NO
MT28F128J3RP-12MET	Micron Technology	FLASH	INDUSTRIAL	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	80 mA	8388608 words	3	NO	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		8MX16	8M	-40 Cel	128	YES	MATTE TIN	YES	DUAL	R-PDSO-G56		3.6 V	1.2 mm		14 mm	Not Qualified			134217728 bit	2.7 V		4/8	e3		260	NOR TYPE	.00012 Amp	18.4 mm	YES	120 ns	2.7	NO
LH28F160S5HT-TW	Sharp Corporation	FLASH	INDUSTRIAL	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	5			16	SMALL OUTLINE, THIN PROFILE		8			.5 mm	85 Cel		1MX16	1M	-40 Cel			Tin/Bismuth (Sn/Bi)		DUAL	R-PDSO-G56	3	5.5 V	1.19 mm		14 mm	Not Qualified			16777216 bit	4.5 V			e6	10	250	NOR TYPE		18.4 mm		90 ns	5
LH28F320SKTD-ZR	Sharp Corporation	FLASH	COMMERCIAL	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	SMALL OUTLINE, THIN PROFILE		8			.5 mm	70 Cel		2MX16	2M	0 Cel					DUAL	R-PDSO-G56		3.6 V	1.19 mm		14 mm	Not Qualified			33554432 bit	2.7 V						NOR TYPE		18.4 mm		120 ns	3
MT28EW256ABA1HPN-0SITTR	Micron Technology	FLASH		56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	50 mA	16777216 words	3	YES		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,8X8,32	8		20	.8 mm	85 Cel	3-STATE	16MX16	16M	-40 Cel	256	YES		YES	BOTTOM	R-PBGA-B56		3.6 V	1 mm	100000 Write/Erase Cycles	7 mm		.00006 ms		268435456 bit	2.7 V		16		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000135 Amp	9 mm	YES	70 ns	3	YES
MT28EW256ABA1LPN-0SITTR	Micron Technology	FLASH		56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	50 mA	16777216 words	3	YES		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,8X8,32	8		20	.8 mm	85 Cel	3-STATE	16MX16	16M	-40 Cel	256	YES		YES	BOTTOM	R-PBGA-B56		3.6 V	1 mm	100000 Write/Erase Cycles	7 mm		.00006 ms		268435456 bit	2.7 V		16		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000135 Amp	9 mm	YES	70 ns	3	YES
JS28F00AP30EFA	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	64K	31 mA	67108864 words	1.8	NO	1.8,1.8/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20		Flash Memories		.5 mm	85 Cel		64MX16	64M	-40 Cel	1K	YES	Matte Tin (Sn)		DUAL	R-PDSO-G56		2 V	1.2 mm		14 mm	Not Qualified			1073741824 bit	1.7 V	SYMMETRICAL BLOCKS	16	e3	30	260	NOR TYPE	.00024 Amp	18.4 mm	YES	110 ns	1.8	NO

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.