LBGA Flash Memory 107

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
MTFC4GLGDQ-AITATR	Micron Technology	FLASH		100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words		NO	8	GRID ARRAY, LOW PROFILE	BGA100,10X17,40			1 mm	85 Cel		4GX8	4G	-40 Cel	NO	TIN SILVER COPPER		BOTTOM		R-PBGA-B100		3.6 V	1.4 mm		52 MHz	14 mm		34359738368 bit	2.7 V		e1	30	260	MLC NAND TYPE		18 mm			NO
MTFC4GLMDQ-AITATR	Micron Technology	FLASH CARD		100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words			8	GRID ARRAY, LOW PROFILE	BGA100,10X17,40			1 mm	85 Cel	OPEN-DRAIN	4GX8	4G	-40 Cel				BOTTOM		R-PBGA-B100		3.6 V	1.4 mm		52 MHz	14 mm		34359738368 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	MLC NAND TYPE		18 mm		2.7
MTFC16GAKAEDQ-AAT	Micron Technology	FLASH CARD	INDUSTRIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			17179869184 words		NO	8	GRID ARRAY, LOW PROFILE	BGA100,10X15,40			1 mm	105 Cel		16GX8	16G	-40 Cel	NO	Gold (Au) - with Nickel (Ni) barrier	YES	BOTTOM		R-PBGA-B100		3.6 V	1.4 mm		52 MHz	14 mm		137438953472 bit	2.7 V		e4	30	260	NAND TYPE		18 mm		2.7	NO
MTFC64GAJAEDQ-AIT	Micron Technology	FLASH CARD	INDUSTRIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			68719476736 words		NO	8	GRID ARRAY, LOW PROFILE	BGA100,10X15,40			1 mm	85 Cel		64GX8	64G	-40 Cel	NO		YES	BOTTOM		R-PBGA-B100		3.6 V	1.4 mm		52 MHz	14 mm		549755813888 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NAND TYPE		18 mm		2.7	NO
MTFC4GLGDQ-AITZ	Micron Technology	FLASH CARD	INDUSTRIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words			8	GRID ARRAY, LOW PROFILE		4		1 mm	85 Cel		4GX8	4G	-40 Cel		TIN SILVER COPPER		BOTTOM		R-PBGA-B100		3.6 V	1.4 mm			14 mm		34359738368 bit	2.7 V		e1					18 mm		2.7
MTFC8GLWDQ-3LAATZ	Micron Technology	FLASH CARD	INDUSTRIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words			8	GRID ARRAY, LOW PROFILE	BGA100,10X17,40			1 mm	105 Cel		8GX8	8G	-40 Cel				BOTTOM		R-PBGA-B100		3.6 V	1.703 mm		52 MHz	14 mm		68719476736 bit	2.7 V					NAND TYPE		18 mm
MT28EW01GABA1HPC-0AAT	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			67108864 words	3		16	GRID ARRAY, LOW PROFILE				1 mm	105 Cel		64MX16	64M	-40 Cel				BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm		1073741824 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		13 mm	105 ns	3
MT28EW01GABA1LPC-0AAT	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			67108864 words	3		16	GRID ARRAY, LOW PROFILE				1 mm	105 Cel		64MX16	64M	-40 Cel				BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm		1073741824 bit	2.7 V					NOR TYPE		13 mm	105 ns	3
MT28EW512ABA1HPC-0AAT	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3		16	GRID ARRAY, LOW PROFILE		8		1 mm	105 Cel		32MX16	32M	-40 Cel				BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm		536870912 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED			13 mm	105 ns	3
MT28EW512ABA1LPC-0AAT	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3		16	GRID ARRAY, LOW PROFILE		8		1 mm	105 Cel		32MX16	32M	-40 Cel				BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm		536870912 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED			13 mm	105 ns	3
MT28FW512ABA1HPC-0AAT	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3		16	GRID ARRAY, LOW PROFILE				1 mm	105 Cel		32MX16	32M	-40 Cel				BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm		536870912 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED			13 mm	105 ns	3
MT28FW512ABA1LPC-0AAT	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3		16	GRID ARRAY, LOW PROFILE				1 mm	105 Cel		32MX16	32M	-40 Cel				BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm		536870912 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED			13 mm	105 ns	3
MT28EW01GABA1HPC-1SIT	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			67108864 words	3		16	GRID ARRAY, LOW PROFILE				1 mm	85 Cel		64MX16	64M	-40 Cel				BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm		1073741824 bit	2.7 V			30	260			13 mm	95 ns	3
MT28EW01GABA1LPC-1SIT	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			67108864 words	3		16	GRID ARRAY, LOW PROFILE				1 mm	85 Cel		64MX16	64M	-40 Cel				BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm		1073741824 bit	2.7 V			30	260			13 mm	95 ns	3
MT28EW512ABA1HPC-1SIT	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3		16	GRID ARRAY, LOW PROFILE		8		1 mm	85 Cel		32MX16	32M	-40 Cel				BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm		536870912 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED			13 mm	95 ns	3
MT28EW512ABA1LPC-1SIT	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3		16	GRID ARRAY, LOW PROFILE		8		1 mm	85 Cel		32MX16	32M	-40 Cel				BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm		536870912 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED			13 mm	95 ns	3
MT28FW01GABA1HPC-0AAT	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			67108864 words	3		16	GRID ARRAY, LOW PROFILE				1 mm	105 Cel		64MX16	64M	-40 Cel				BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm		1073741824 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		13 mm		3
S40410081B1B2I000	Cypress Semiconductor	FLASH	INDUSTRIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words	3		8	GRID ARRAY, LOW PROFILE		4		1 mm	85 Cel		8GX8	8G	-40 Cel				BOTTOM		R-PBGA-B100		3.6 V	1.4 mm			14 mm		68719476736 bit	2.7 V					MLC NAND TYPE		18 mm		3
S40410081B1B2W000	Cypress Semiconductor	FLASH	OTHER	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words	3		8	GRID ARRAY, LOW PROFILE		4		1 mm	85 Cel		8GX8	8G	-25 Cel				BOTTOM		R-PBGA-B100		3.6 V	1.4 mm			14 mm		68719476736 bit	2.7 V					MLC NAND TYPE		18 mm		3
S40410161B1B2I010	Cypress Semiconductor	FLASH	INDUSTRIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			17179869184 words	3		8	GRID ARRAY, LOW PROFILE		4		1 mm	85 Cel		16GX8	16G	-40 Cel				BOTTOM		R-PBGA-B100		3.6 V	1.4 mm			14 mm		137438953472 bit	2.7 V					MLC NAND TYPE		18 mm		3
S40410161B1B2W010	Cypress Semiconductor	FLASH	OTHER	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			17179869184 words	3		8	GRID ARRAY, LOW PROFILE		4		1 mm	85 Cel		16GX8	16G	-25 Cel				BOTTOM		R-PBGA-B100		3.6 V	1.4 mm			14 mm		137438953472 bit	2.7 V					MLC NAND TYPE		18 mm		3
MT28EW128ABA1HPC-1SIT	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			8388608 words	3		16	GRID ARRAY, LOW PROFILE		8		1 mm	85 Cel		8MX16	8M	-40 Cel		Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm		134217728 bit	2.7 V		e1	30	260			13 mm	70 ns	3
MT28EW256ABA1HPC-1SIT	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			16777216 words	3		16	GRID ARRAY, LOW PROFILE		8		1 mm	85 Cel		16MX16	16M	-40 Cel				BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm		268435456 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED			13 mm	70 ns	3
MT28EW256ABA1LPC-1SIT	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			16777216 words	3		16	GRID ARRAY, LOW PROFILE		8		1 mm	85 Cel		16MX16	16M	-40 Cel				BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm		268435456 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED			13 mm	70 ns	3
MT28FW02GBBA1LPC-0AAT	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			134217728 words	3		16	GRID ARRAY, LOW PROFILE				1 mm	105 Cel		128MX16	128M	-40 Cel				BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm		2147483648 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED			13 mm	105 ns	3
IS21ES04G-JQLI	Integrated Silicon Solution	FLASH	INDUSTRIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words	3.3		8	GRID ARRAY, LOW PROFILE				1 mm	85 Cel		4GX8	4G	-40 Cel		TIN SILVER COPPER		BOTTOM		R-PBGA-B100	3	3.6 V	1.4 mm			14 mm		34359738368 bit	2.7 V		e1	10	260			18 mm		3.3
MT29F1T08CUCCBH8-6R:C	Micron Technology	FLASH	COMMERCIAL	152	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS/ASYNCHRONOUS			137438953472 words	3.3		8	GRID ARRAY, LOW PROFILE				1 mm	70 Cel		128GX8	128G	0 Cel				BOTTOM		R-PBGA-B152		3.6 V	1.4 mm			14 mm		1099511627776 bit	2.7 V					MLC NAND TYPE		18 mm		3.3
MX66L2G45GXRI00	Macronix	FLASH	INDUSTRIAL	24	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		130 mA	268435456 words	3		8	GRID ARRAY, LOW PROFILE	BGA24,5X5,40	4	20	1 mm	85 Cel	3-STATE	256MX8	256M	-40 Cel				BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.3 mm	100000 Write/Erase Cycles	133 MHz	6 mm	SPI	2147483648 bit	2.7 V	IT CAN ALSO CONFIGURED AS 1G X 2 AND 2G X 1		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0006 Amp	8 mm		3
MTFC4GMWDQ-3MAIT	Micron Technology	FLASH CARD	INDUSTRIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words			8	GRID ARRAY, LOW PROFILE				1 mm	85 Cel		4GX8	4G	-40 Cel				BOTTOM		R-PBGA-B100		3.6 V	1.4 mm			14 mm		34359738368 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED			18 mm		2.7
MTFC4GLMDQ-AITZ	Micron Technology	FLASH CARD	INDUSTRIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words			8	GRID ARRAY, LOW PROFILE	BGA100,10X17,40			1 mm	85 Cel	OPEN-DRAIN	4GX8	4G	-40 Cel				BOTTOM		R-PBGA-B100		3.6 V	1.4 mm		52 MHz	14 mm		34359738368 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	MLC NAND TYPE		18 mm		2.7
MTFC8GLWDQ-3LAITZ	Micron Technology	FLASH	INDUSTRIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words			8	GRID ARRAY, LOW PROFILE				1 mm	85 Cel		8GX8	8G	-40 Cel		Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B100		3.6 V	1.4 mm			14 mm		68719476736 bit	2.7 V		e1	30	260			18 mm		2.7
MTFC4GLGDQ-AITA	Micron Technology	FLASH CARD	INDUSTRIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words			8	GRID ARRAY, LOW PROFILE				1 mm	85 Cel		4GX8	4G	-40 Cel		TIN SILVER COPPER		BOTTOM		R-PBGA-B100		3.6 V	1.4 mm			14 mm		34359738368 bit	2.7 V		e1	30	260	MLC NAND TYPE		18 mm		2.7
MTFC4GLGDQ-AITZTR	Micron Technology	FLASH CARD	INDUSTRIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words			8	GRID ARRAY, LOW PROFILE		4		1 mm	85 Cel		4GX8	4G	-40 Cel		TIN SILVER COPPER		BOTTOM		R-PBGA-B100		3.6 V	1.4 mm			14 mm		34359738368 bit	2.7 V		e1					18 mm		2.7
MTFC4GLMDQ-AITZTR	Micron Technology	FLASH CARD	INDUSTRIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words			8	GRID ARRAY, LOW PROFILE	BGA100,10X17,40			1 mm	85 Cel	OPEN-DRAIN	4GX8	4G	-40 Cel				BOTTOM		R-PBGA-B100		3.6 V	1.4 mm		52 MHz	14 mm		34359738368 bit	2.7 V					MLC NAND TYPE		18 mm		2.7
S29GL064N90FFIS13	Infineon Technologies	FLASH		64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words	3	YES	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		4MX16	4M	-40 Cel	NO		YES	BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm		67108864 bit	2.7 V					NOR TYPE		13 mm	90 ns	3	NO
S29GL064N90FFIS22	Infineon Technologies	FLASH		64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words	3	YES	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		4MX16	4M	-40 Cel	NO		YES	BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm		67108864 bit	2.7 V					NOR TYPE		13 mm	90 ns	3	NO
S29GL064N90FFIS23	Infineon Technologies	FLASH		64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words	3	YES	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		4MX16	4M	-40 Cel	NO		YES	BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm		67108864 bit	2.7 V					NOR TYPE		13 mm	90 ns	3	NO
S29GL032N11FFIS22	Infineon Technologies	FLASH		64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		2097152 words	3	YES	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		2MX16	2M	-40 Cel	NO		YES	BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm		33554432 bit	1.65 V					NOR TYPE		13 mm	110 ns	3	NO
S29GL032N90FFIS12	Infineon Technologies	FLASH		64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		2097152 words	3	YES	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		2MX16	2M	-40 Cel	NO		YES	BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm		33554432 bit	2.7 V					NOR TYPE		13 mm	90 ns	3	NO
S29GL032N90FFIS13	Infineon Technologies	FLASH		64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		2097152 words	3	YES	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		2MX16	2M	-40 Cel	NO		YES	BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm		33554432 bit	2.7 V					NOR TYPE		13 mm	90 ns	3	NO
S29GL064N11FFIS12	Infineon Technologies	FLASH		64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words	3	YES	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		4MX16	4M	-40 Cel	NO		YES	BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm		67108864 bit	1.65 V					NOR TYPE		13 mm	110 ns	3	NO
S29GL064N90FFIS12	Infineon Technologies	FLASH		64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words	3	YES	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		4MX16	4M	-40 Cel	NO		YES	BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm		67108864 bit	2.7 V					NOR TYPE		13 mm	90 ns	3	NO
S29GL064N90FFIS20	Infineon Technologies	FLASH		64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words	3	YES	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		4MX16	4M	-40 Cel	NO		YES	BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm		67108864 bit	2.7 V					NOR TYPE		13 mm	90 ns	3	NO
S29GL032N90FFIS10	Infineon Technologies	FLASH		64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		2097152 words	3	YES	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		2MX16	2M	-40 Cel	NO		YES	BOTTOM		R-PBGA-B64	3	3.6 V	1.4 mm			11 mm		33554432 bit	2.7 V					NOR TYPE		13 mm	90 ns	3	NO
S29GL064N11FFIS10	Infineon Technologies	FLASH		64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words	3	YES	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		4MX16	4M	-40 Cel	NO		YES	BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm		67108864 bit	1.65 V					NOR TYPE		13 mm	110 ns	3	NO
S29GL064N11FFIS13	Infineon Technologies	FLASH		64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words	3	YES	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		4MX16	4M	-40 Cel	NO		YES	BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm		67108864 bit	1.65 V					NOR TYPE		13 mm	110 ns	3	NO
S29GL064N11FFIS20	Infineon Technologies	FLASH		64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words	3	YES	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		4MX16	4M	-40 Cel	NO		YES	BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm		67108864 bit	1.65 V					NOR TYPE		13 mm	110 ns	3	NO
S29GL064N11FFIS22	Infineon Technologies	FLASH		64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words	3	YES	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		4MX16	4M	-40 Cel	NO		YES	BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm		67108864 bit	1.65 V					NOR TYPE		13 mm	110 ns	3	NO

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.