LFBGA Flash Memory 13

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
AT49BV8192A-11CI	Atmel	FLASH	INDUSTRIAL	48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,8K,992K	50 mA	524288 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	8	Flash Memories	.75 mm	85 Cel	512KX16	512K	-40 Cel	1,2,1	YES	TIN LEAD		BOTTOM	S-PBGA-B48		3.6 V	1.25 mm		7 mm	Not Qualified	BOTTOM	8388608 bit	2.7 V	HARDWARE DATA PROTECTION	e0			NOR TYPE	.00005 Amp	7 mm		110 ns	3	YES
MX29LV320EBXEI-70G	Macronix	FLASH	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,64K	30 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel	2MX16	2M	-40 Cel	8,63	YES	Tin/Silver/Copper (Sn/Ag/Cu)	YES	BOTTOM	R-PBGA-B48		3.6 V	1.3 mm		6 mm	Not Qualified	BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK	e1	10	260	NOR TYPE	.000015 Amp	8 mm	YES	70 ns	3	YES
MX29LV800CBXEI-70G	Macronix	FLASH	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel	8MX16	8M	-40 Cel	1,2,1,15	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B48		3.6 V	1.3 mm		6 mm	Not Qualified	BOTTOM	134217728 bit	2.7 V		e1			NOR TYPE	.000005 Amp	8 mm	YES	70 ns	3	YES
MTFC16GJGEF-AITZ	Micron Technology	FLASH CARD	INDUSTRIAL	169	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			17179869184 words				8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA169,14X14,20			.5 mm	85 Cel	16GX8	16G	-40 Cel					BOTTOM	R-PBGA-B169		3.6 V	1.364 mm	52 MHz	14 mm			137438953472 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NAND TYPE		18 mm
MTFC16GLWDM-4MAITZ	Micron Technology	FLASH CARD	INDUSTRIAL	153	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			17179869184 words				8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA153,14X14,20			.5 mm	85 Cel	16GX8	16G	-40 Cel					BOTTOM	R-PBGA-B153		3.6 V	1.364 mm	52 MHz	11.5 mm			137438953742 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NAND TYPE		13 mm
MTFC32GJGEF-AITZ	Micron Technology	FLASH CARD	INDUSTRIAL	169	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			34359738368 words				8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA169,14X14,20			.5 mm	85 Cel	32GX8	32G	-40 Cel					BOTTOM	R-PBGA-B169		3.6 V	1.364 mm	52 MHz	14 mm			274877906944 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NAND TYPE		18 mm
MTFC4GMWDM-3MAITA	Micron Technology	FLASH CARD	INDUSTRIAL	153	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words				8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA153,14X14,20			.5 mm	85 Cel	4GX8	4G	-40 Cel					BOTTOM	R-PBGA-B153		3.6 V	1.364 mm	52 MHz	11.5 mm			34359738368 bit	2.7 V					NAND TYPE		13 mm
MTFC8GLWDM-AITA	Micron Technology	FLASH CARD	INDUSTRIAL	153	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words				8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA153,14X14,20			.5 mm	85 Cel	8GX8	8G	-40 Cel					BOTTOM	R-PBGA-B153		3.6 V	1.364 mm	52 MHz	11.5 mm			68719476736 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NAND TYPE		13 mm
MTFC8GLWDM-AITZ	Micron Technology	FLASH CARD	INDUSTRIAL	153	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words				8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA153,14X14,20			.5 mm	85 Cel	8GX8	8G	-40 Cel					BOTTOM	R-PBGA-B153		3.6 V	1.364 mm	52 MHz	11.5 mm			68719476736 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NAND TYPE		13 mm
MTFC8GLWDM-AITATR	Micron Technology	FLASH CARD	INDUSTRIAL	153	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words				8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA153,14X14,20			.5 mm	85 Cel	8GX8	8G	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B153		3.6 V	1.2 mm	52 MHz	11.5 mm			68719476736 bit	2.7 V		e1	30	260	NAND TYPE		13 mm			2.7
MTFC64GAJAEDN-AIT	Micron Technology	FLASH CARD	INDUSTRIAL	169	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			68719476736 words		NO		8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA169,14X28,20			.5 mm	85 Cel	64GX8	64G	-40 Cel		NO		YES	BOTTOM	R-PBGA-B169		3.6 V	1.4 mm	52 MHz	14 mm			549755813888 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NAND TYPE		18 mm			2.7	NO
MTFC64GJDDN-3MWT	Micron Technology	FLASH CARD	OTHER	169	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			68719476736 words	3.3	NO		8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA169,14X28,20			.5 mm	85 Cel	64GX8	64G	-25 Cel		NO	TIN SILVER COPPER		BOTTOM	R-PBGA-B169		3.6 V	1.4 mm	52 MHz	14 mm			549755813888 bit	2.7 V					MLC NAND TYPE		18 mm			3.3	NO
RPSEMC16DA1	Panasonic	FLASH CARD	INDUSTRIAL	153	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		ASYNCHRONOUS			17179869184 words				8	GRID ARRAY, LOW PROFILE, FINE PITCH				.5 mm	85 Cel	16GX8	16G	-40 Cel					BOTTOM	R-PBGA-B153	3	3.6 V	1.4 mm		11.5 mm			137438953472 bit	2.7 V					MLC NAND TYPE		13 mm			2.7

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.