TFBGA Flash Memory 49

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
SST39VF3202C-70-4I-B3KE	Microchip Technology	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	45 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32		Flash Memories	100	.8 mm	85 Cel	3-STATE	2MX16	2M	-40 Cel	8,63	YES	TIN SILVER COPPER	YES	BOTTOM	1	R-PBGA-B48	3	3.6 V	1.2 mm	100000 Write/Erase Cycles		6 mm	Not Qualified	TOP	33554432 bit	2.7 V	TOP BOOT-BLOCK		e1	40	260	NOR TYPE	.00005 Amp	8 mm	YES	70 ns	3	YES
SST39LF401C-55-4C-B3KE	Microchip Technology	FLASH	COMMERCIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,4K,16K,32K	30 mA	262144 words	3.3	YES	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32		Flash Memories	100	.8 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	1,2,1,7	YES	TIN SILVER COPPER	YES	BOTTOM	1	R-PBGA-B48	3	3.6 V	1.2 mm	100000 Write/Erase Cycles		6 mm	Not Qualified	BOTTOM	4194304 bit	3 V	BOTTOM BOOT BLOCK		e1	40	260	NOR TYPE	.00002 Amp	8 mm	YES	55 ns	3.3	YES
SST39LF402C-55-4C-B3KE	Microchip Technology	FLASH	COMMERCIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,4K,16K,32K	30 mA	262144 words	3.3	YES	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32		Flash Memories	100	.8 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	1,2,1,7	YES	TIN SILVER COPPER	YES	BOTTOM	1	R-PBGA-B48	3	3.6 V	1.2 mm	100000 Write/Erase Cycles		6 mm	Not Qualified	TOP	4194304 bit	3 V	TOP BOOT BLOCK		e1	40	260	NOR TYPE	.00002 Amp	8 mm	YES	55 ns	3.3	YES
SST39VF402C-70-4I-B3KE	Microchip Technology	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,4K,16K,32K	30 mA	262144 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32		Flash Memories	100	.8 mm	85 Cel	3-STATE	256KX16	256K	-40 Cel	1,2,1,7	YES	TIN SILVER COPPER	YES	BOTTOM	1	R-PBGA-B48	3	3.6 V	1.2 mm	100000 Write/Erase Cycles		6 mm	Not Qualified	TOP	4194304 bit	2.7 V	TOP BOOT BLOCK		e1	40	260	NOR TYPE	.00002 Amp	8 mm	YES	70 ns	3	YES
M29W800FB70ZA3SE	Micron Technology	FLASH	AUTOMOTIVE	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			524288 words	3.3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8			.8 mm	125 Cel		512KX16	512K	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B48		3.6 V	1.2 mm			6 mm		BOTTOM	8388608 bit	3 V	BOTTOM BOOT BLOCK		e1					8 mm		70 ns	3
M29W800FT70ZA3SE	Micron Technology	FLASH	AUTOMOTIVE	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			524288 words	3.3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8			.8 mm	125 Cel		512KX16	512K	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B48		3.6 V	1.2 mm			6 mm		TOP	8388608 bit	3 V	TOP BOOT BLOCK		e1					8 mm		70 ns	3
NAND512R3A2SZA6E	Micron Technology	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			67108864 words	1.8			8	GRID ARRAY, THIN PROFILE, FINE PITCH					.8 mm	85 Cel		64MX8	64M	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B63		1.95 V	1.05 mm			9 mm			536870912 bit	1.7 V			e1	30	260	SLC NAND TYPE		11 mm			1.8
PF48F3000P0ZBQEA	Micron Technology	FLASH	INDUSTRIAL	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			8388608 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH					.8 mm	85 Cel		8MX16	8M	-40 Cel					BOTTOM		R-PBGA-B88		2 V	1.2 mm			8 mm		BOTTOM	134217728 bit	1.7 V	BOTTOM BOOT			30	260			10 mm		65 ns	1.8
RC28F128P33TF60A	Micron Technology	FLASH	INDUSTRIAL	64	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,64K	28 mA	8388608 words	3	NO	2.5/3,3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA64,8X8,40		Flash Memories		.5 mm	85 Cel		8MX16	8M	-40 Cel	4,127	YES			BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			8 mm	Not Qualified	TOP	134217728 bit	2.3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	8	e0	30	245	NOR TYPE	.002 Amp	10 mm	YES	60 ns	3	NO
M29W400BT55ZA1	STMicroelectronics	FLASH	COMMERCIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	3.3	YES	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	70 Cel		256KX16	256K	0 Cel	1,2,1,7	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B48		3.6 V	1.2 mm	100000 Write/Erase Cycles		6 mm	Not Qualified	TOP	4194304 bit	3 V	TOP BOOT BLOCK		e1			NOR TYPE	.0001 Amp	9 mm		55 ns	3	YES
MTFC128GAPALNS-AAT	Micron Technology	FLASH CARD	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			137438953472 words				8	GRID ARRAY, THIN PROFILE, FINE PITCH					.5 mm	105 Cel		128GX8	128G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B153		3.6 V	1.2 mm			11.5 mm			1099511627776 bit	2.7 V			e1	30	260			13 mm			2.7
MTFC128GAPALNS-AIT	Micron Technology	FLASH CARD	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			137438953472 words				8	GRID ARRAY, THIN PROFILE, FINE PITCH					.5 mm	85 Cel		128GX8	128G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B153		3.6 V	1.2 mm			11.5 mm			1099511627776 bit	2.7 V			e1	30	260			13 mm			2.7
MTFC32GAPALBH-AAT	Micron Technology	FLASH CARD	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			34359738368 words				8	GRID ARRAY, THIN PROFILE, FINE PITCH					.5 mm	105 Cel		32GX8	32G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B153		3.6 V	1.2 mm			11.5 mm			274877906944 bit	2.7 V			e1	30	260			13 mm			2.7
MTFC32GAPALBH-AIT	Micron Technology	FLASH CARD	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			34359738368 words				8	GRID ARRAY, THIN PROFILE, FINE PITCH					.5 mm	85 Cel		32GX8	32G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B153		3.6 V	1.2 mm			11.5 mm			274877906944 bit	2.7 V			e1	30	260			13 mm			2.7
MTFC64GAPALBH-AAT	Micron Technology	FLASH CARD	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			68719476736 words				8	GRID ARRAY, THIN PROFILE, FINE PITCH					.5 mm	105 Cel		64GX8	64G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B153		3.6 V	1.2 mm			11.5 mm			549755813888 bit	2.7 V				30	260			13 mm			2.7
MTFC64GAPALBH-AIT	Micron Technology	FLASH CARD	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			68719476736 words				8	GRID ARRAY, THIN PROFILE, FINE PITCH					.5 mm	85 Cel		64GX8	64G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B153		3.6 V	1.2 mm			11.5 mm			549755813888 bit	2.7 V			e1	30	260			13 mm			2.7
MTFC64GASAONS-AITES	Micron Technology	FLASH CARD	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			68719476736 words	3.3			8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	95 Cel		64GX8	64G	-40 Cel					BOTTOM		R-PBGA-B153		3.6 V	1.461 mm		52 MHz	11.5 mm			549755813888 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NAND TYPE		13 mm
MTFC4GLGDM-AITA	Micron Technology	FLASH CARD	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words				8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel		4GX8	4G	-40 Cel					BOTTOM		R-PBGA-B153		3.6 V	1.374 mm		52 MHz	11.5 mm			34359738368 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NAND TYPE		13 mm
MTFC8GLGDM-AITZ	Micron Technology	FLASH CARD	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words				8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel		8GX8	8G	-40 Cel					BOTTOM		R-PBGA-B153		3.6 V	1.374 mm		52 MHz	11.5 mm			68719476736 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NAND TYPE		13 mm
MTFC8GAMALBH-IT	Micron Technology	FLASH CARD	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words				8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel	3-STATE	8GX8	8G	-40 Cel					BOTTOM		R-PBGA-B153		3.6 V	1.1 mm		200 MHz	11.5 mm			68719476736 bit	2.7 V						NAND TYPE		13 mm			2.7
MTFC128GAPALNS-IT	Micron Technology	FLASH CARD	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			137438953472 words				8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel	3-STATE	128GX8	128G	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B153		3.6 V	1.1 mm		200 MHz	11.5 mm			1099511627776 bit	2.7 V			e1	30	260	NAND TYPE		13 mm			2.7
MTFC16GAPALBH-AATTR	Micron Technology	FLASH CARD		153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			17179869184 words				8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	105 Cel		16GX8	16G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B153		3.6 V	1.2 mm		200 MHz	11.5 mm			137438953472 bit	2.7 V			e1	30	260	NAND TYPE		13 mm
MTFC8GAMALBH-AITTR	Micron Technology	FLASH CARD		153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q104	BALL	PARALLEL	SYNCHRONOUS			8589934592 words		NO		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA153,14X14,20	4		5	.5 mm	85 Cel	OPEN-DRAIN	8GX8	8G	-40 Cel		NO	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B153		3.6 V	1.2 mm		200 MHz	11.5 mm			68719476736 bit	2.7 V			e1	30	260	NAND TYPE		13 mm			2.7	NO
MTFC32GAPALBH-IT	Micron Technology	FLASH CARD	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			34359738368 words				8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel	3-STATE	32GX8	32G	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B153		3.6 V	1.1 mm		200 MHz	11.5 mm			274877906944 bit	2.7 V			e1	30	260	NAND TYPE		13 mm			2.7
MT29F8G08ABACAH4:C	Micron Technology	FLASH	COMMERCIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	256K	35 mA	1073741824 words	3.3	NO	3/3.3	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	70 Cel		1GX8	1G	0 Cel	4K	YES		YES	BOTTOM		R-PBGA-B63		3.6 V	1 mm			9 mm	Not Qualified		8589934592 bit	2.7 V		4K				SLC NAND TYPE	.0001 Amp	11 mm				NO
NAND512W3A2SZA6E	Micron Technology	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K	20 mA	67108864 words	3	NO	3/3.3	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		64MX8	64M	-40 Cel	4K	YES	TIN SILVER COPPER NICKEL	YES	BOTTOM		R-PBGA-B63		3.6 V	1.05 mm			9 mm	Not Qualified		536870912 bit	2.7 V		512	e2	30	260	SLC NAND TYPE	.00005 Amp	11 mm		35 ns	3	NO
MTFC64GAKAEEY-4MIT	Micron Technology	FLASH CARD	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			68719476736 words				8	GRID ARRAY, THIN PROFILE, FINE PITCH					.5 mm	85 Cel		64GX8	64G	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B153		3.6 V	1.2 mm			11.5 mm			549755813888 bit	2.7 V			e1	30	260	MLC NAND TYPE		13 mm			2.7
MTFC16GKQDI-IT	Micron Technology	FLASH CARD	INDUSTRIAL	169	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			17179869184 words	3			8	GRID ARRAY, THIN PROFILE, FINE PITCH					.5 mm	85 Cel		16GX8	16G	-40 Cel					BOTTOM		R-PBGA-B169		3.6 V	1.2 mm		52 MHz	12 mm			137438953472 bit	2.7 V	IT ALSO REQUIRES 1.65V TO 1.95V, MMC DEVICE			30	260	MLC NAND TYPE		16 mm			3
M29W320DB80ZA3E	Micron Technology	FLASH	AUTOMOTIVE	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8			.8 mm	125 Cel		2MX16	2M	-40 Cel					BOTTOM		R-PBGA-B48		3.6 V	1.2 mm			6 mm			33554432 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			8 mm		80 ns	3
NAND512R3A2SZAXE	Micron Technology	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K	15 mA	64094208 words	1.8	NO	1.8	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		64MX8	64M	-40 Cel	4K	YES		YES	BOTTOM		R-PBGA-B63		1.95 V	1.05 mm			9 mm	Not Qualified		512753664 bit	1.7 V		512				SLC NAND TYPE	.00005 Amp	11 mm		45 ns	1.8	NO
NAND512W3A2SZAXE	Micron Technology	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K	20 mA	64094208 words	3	NO	3/3.3	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		64MX8	64M	-40 Cel	4K	YES		YES	BOTTOM		R-PBGA-B63		3.6 V	1.05 mm			9 mm	Not Qualified		512753664 bit	2.7 V		512				SLC NAND TYPE	.00005 Amp	11 mm		35 ns	3	NO
NAND512R3A2SZA6F	Micron Technology	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K	15 mA	64094208 words	1.8	NO	1.8	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		64MX8	64M	-40 Cel	4K	YES		YES	BOTTOM		R-PBGA-B63		1.95 V	1.05 mm			9 mm	Not Qualified		512753664 bit	1.7 V		512				SLC NAND TYPE	.00005 Amp	11 mm		45 ns	1.8	NO
NAND256W3A2BZAXE	Micron Technology	FLASH	INDUSTRIAL	55	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K	20 mA	33554432 words	3	NO	3/3.3	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA55,8X12,32		Flash Memories		.8 mm	85 Cel		32MX8	32M	-40 Cel	2K	YES		YES	BOTTOM		R-PBGA-B55		3.6 V	1.05 mm			8 mm	Not Qualified		268435456 bit	2.7 V		512				SLC NAND TYPE	.00005 Amp	10 mm		45 ns	3	NO
MTFC8GAMALBH-AIT	Micron Technology	FLASH CARD	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words				8	GRID ARRAY, THIN PROFILE, FINE PITCH					.5 mm	85 Cel		8GX8	8G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B153		3.6 V	1.2 mm			11.5 mm			68719476736 bit	2.7 V			e1	30	260	NAND TYPE		13 mm			2.7
MTFC4GLGDM-AITZ	Micron Technology	FLASH CARD	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words				8	GRID ARRAY, THIN PROFILE, FINE PITCH					.5 mm	85 Cel		4GX8	4G	-40 Cel					BOTTOM		R-PBGA-B153		3.6 V	1.2 mm			11.5 mm			34359738368 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			13 mm			2.7
MTFC4GMWDM-3MAIT	Micron Technology	FLASH CARD	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words				8	GRID ARRAY, THIN PROFILE, FINE PITCH					.5 mm	85 Cel		4GX8	4G	-40 Cel					BOTTOM		R-PBGA-B153		3.6 V	1.2 mm			11.5 mm			34359738368 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			13 mm			2.7
PF48F4400P0VBQ0A	Micron Technology	FLASH	INDUSTRIAL	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,64K	51 mA	33554432 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32		Flash Memories		.8 mm	85 Cel		32MX16	32M	-40 Cel	8, 510	YES			BOTTOM		R-PBGA-B88		2 V	1.2 mm			8 mm	Not Qualified	BOTTOM	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	4		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	11 mm	YES	88 ns	1.8	NO
MTFC64GAPALBH-IT	Micron Technology	FLASH CARD	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			68719476736 words				8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel	3-STATE	64GX8	64G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B153		3.6 V	1.1 mm		200 MHz	11.5 mm			549755813888 bit	2.7 V			e1	30	260	NAND TYPE		13 mm			2.7
MTFC64GASAONS-AAT	Micron Technology	FLASH CARD	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			68719476736 words	3.3			8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	105 Cel		64GX8	64G	-40 Cel					BOTTOM		R-PBGA-B153		3.6 V	1.461 mm		52 MHz	11.5 mm			549755813888 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NAND TYPE		13 mm
MTFC64GASAONS-AITESTR	Micron Technology	FLASH CARD	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			68719476736 words	3.3			8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	95 Cel		64GX8	64G	-40 Cel					BOTTOM		R-PBGA-B153		3.6 V	1.461 mm		52 MHz	11.5 mm			549755813888 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NAND TYPE		13 mm
SST39VF3201C-70-4I-B3KE-T-VAO	Microchip Technology	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	45 mA	2097152 words	3	YES		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32			100	.8 mm	85 Cel	3-STATE	2MX16	2M	-40 Cel	8,63			YES	BOTTOM	1	R-PBGA-B48		3.6 V	1.2 mm	100000 Write/Erase Cycles		6 mm		BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK					NOR TYPE	.00005 Amp	8 mm	YES	70 ns	3	YES
MTFC128GAPALBH-AAT	Micron Technology	FLASH CARD		153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS			137438953472 words				8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	105 Cel		128GX8	128G	-40 Cel					BOTTOM		R-PBGA-B153		3.6 V	1.1 mm			11.5 mm			1099511627776 bit	2.7 V						NAND TYPE		13 mm
MTFC16GAPALBH-ITTR	Micron Technology	FLASH CARD	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			17179869184 words				8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel	3-STATE	16GX8	16G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B153		3.6 V	1.2 mm		200 MHz	11.5 mm			137438953472 bit	2.7 V				30	260	NAND TYPE		13 mm			2.7
MTFC16GAPALBH-IT	Micron Technology	FLASH CARD	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			17179869184 words				8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel	3-STATE	16GX8	16G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B153		3.6 V	1.1 mm		200 MHz	11.5 mm			137438953472 bit	2.7 V			e1	30	260	NAND TYPE		13 mm			2.7
MTFC128GAPALBH-AIT	Micron Technology	FLASH CARD	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			137438953472 words				8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA153,14X14,20			5	.5 mm	85 Cel		128GX8	128G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B153		3.6 V	1.1 mm		200 MHz	11.5 mm			1099511627776 bit	2.7 V			e1	30	260	NAND TYPE		13 mm
SFEM064GB1ED1TO-I-6F-111-STD	Swissbit Ag	FLASH CARD		153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS			68719476736 words	3.3			8	GRID ARRAY, THIN PROFILE, FINE PITCH					.5 mm	85 Cel		64GX8	64G	-40 Cel					BOTTOM		R-PBGA-B153		3.6 V			200 MHz	11.5 mm			549755813888 bit	2.7 V						TLC NAND TYPE		13 mm			3.3
SFEM256GB1ED1TO-I-8H-111-STD	Swissbit Ag	FLASH CARD		153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS			274877906944 words	3.3			8	GRID ARRAY, THIN PROFILE, FINE PITCH					.5 mm	85 Cel		256GX8	256G	-40 Cel					BOTTOM		R-PBGA-B153		3.6 V			200 MHz	11.5 mm			2199023255552 bit	2.7 V						TLC NAND TYPE		13 mm			3.3
SFEM128GB1ED1TO-I-7G-111-STD	Swissbit Ag	FLASH CARD		153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS			137438953472 words	3.3			8	GRID ARRAY, THIN PROFILE, FINE PITCH					.5 mm	85 Cel		128GX8	128G	-40 Cel					BOTTOM		R-PBGA-B153		3.6 V			200 MHz	11.5 mm			1099511627776 bit	2.7 V						TLC NAND TYPE		13 mm			3.3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.