TSOP1 Flash Memory 177

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
MT29F32G08AFACAWP:C	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	512K	50 mA	4294967296 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel		4GX8	4G	0 Cel	8K	YES		YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			34359738368 bit	2.7 V	4K				SLC NAND TYPE		18.4 mm		20 ns	2.7	NO
MT29F32G08AFACAWP-Z:C	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	512K	50 mA	4294967296 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel		4GX8	4G	0 Cel	8K	YES		YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			34359738368 bit	2.7 V	4K				SLC NAND TYPE		18.4 mm		20 ns	2.7	NO
MT29F16G08ABACAWP-Z:C	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	512K	50 mA	2147483648 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel		2GX8	2G	0 Cel	4K	YES		YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			17179869184 bit	2.7 V	4K				SLC NAND TYPE	.00005 Amp	18.4 mm		20 ns	2.7	NO
MT29F8G08ABABAWP:B	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	512K	50 mA	1073741824 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories	10	.5 mm	85 Cel	3-STATE	1GX8	1G	-40 Cel	2K	YES		YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm	100000 Write/Erase Cycles		12 mm	Not Qualified			8589934592 bit	2.7 V	4K				SLC NAND TYPE	.00005 Amp	18.4 mm				NO
IS34ML04G084-TLI	Integrated Silicon Solution	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS			536870912 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		512MX8	512M	-40 Cel			TIN		DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm				4294967296 bit	2.7 V		e3			SLC NAND TYPE		18.4 mm			3.3
MT29F1G08ABADAWP-IT:DTR	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			134217728 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		128MX8	128M	-40 Cel			Tin (Sn)		DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm				1073741824 bit	2.7 V		e3	30	260	SLC NAND TYPE		18.4 mm			3.3
MT29F1G08ABADAWP-ITX:DTR	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			134217728 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		128MX8	128M	-40 Cel			MATTE TIN		DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm				1073741824 bit	2.7 V		e3			SLC NAND TYPE		18.4 mm			3.3
MT29F2G08AADWP:DTR	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			268435456 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel		256MX8	256M	0 Cel			MATTE TIN		DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm				2147483648 bit	2.7 V		e3			SLC NAND TYPE		18.4 mm			3.3
MT29F16G08ABACAWP-ITZ:CTR	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			2147483648 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		2GX8	2G	-40 Cel			MATTE TIN		DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm				17179869184 bit	2.7 V		e3			SLC NAND TYPE		18.4 mm			2.7
MT29F2G08ABAEAWP-ITX:ETR	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			268435456 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		256MX8	256M	-40 Cel			MATTE TIN		DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm				2147483648 bit	2.7 V		e3	30	260	SLC NAND TYPE		18.4 mm			2.7
IS34ML01G084-TLI	Integrated Silicon Solution	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			134217728 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		128MX8	128M	-40 Cel			TIN		DUAL		R-PDSO-G48	3	3.6 V	1.2 mm			12 mm				1073741824 bit	2.7 V		e3			SLC NAND TYPE		18.4 mm			3.3
W29N08GVSIAA	Winbond Electronics	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	350 mA	1073741824 words	3	YES		8	SMALL OUTLINE, THIN PROFILE	tsop48,.787,20	1		10	.5 mm	85 Cel	3-STATE	1GX8	1G	-40 Cel	8K	NO		YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm	100000 Write/Erase Cycles		12 mm				8589934592 bit	2.7 V	2K		NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE	.0002 Amp	18.4 mm			3	NO
W29N01HVSINA	Winbond Electronics	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			134217728 words	3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		128MX8	128M	-40 Cel					DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm				1073741824 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE		18.4 mm			3.3
IS34ML02G084-TLI	Integrated Silicon Solution	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			268435456 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		256MX8	256M	-40 Cel			Matte Tin (Sn)		DUAL		R-PDSO-G48	3	3.6 V	1.2 mm			12 mm				2147483648 bit	2.7 V		e3	10	260	SLC NAND TYPE		18.4 mm			3.3
MT29F2G16ABAEAWP-AAT:E	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			134217728 words	3.3			16	SMALL OUTLINE, THIN PROFILE					.5 mm	105 Cel		128MX16	128M	-40 Cel					DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm				2147483648 bit	2.7 V					SLC NAND TYPE		18.4 mm			3.3
NAND512W3A2SNXE	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K	20 mA	64094208 words	3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		64MX8	64M	-40 Cel	4K	YES		YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			512753664 bit	2.7 V	512				SLC NAND TYPE	.00005 Amp	18.4 mm		35 ns	3	NO
NAND512R3A2SN6E	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			64094208 words	1.8			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		64MX8	64M	-40 Cel			MATTE TIN		DUAL		R-PDSO-G48		1.95 V	1.2 mm			12 mm				512753664 bit	1.7 V		e3	30	260	SLC NAND TYPE		18.4 mm			1.8
NAND512R3A2SN6F	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			64094208 words	1.8			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		64MX8	64M	-40 Cel			MATTE TIN		DUAL		R-PDSO-G48		1.95 V	1.2 mm			12 mm				512753664 bit	1.7 V		e3	30	260	SLC NAND TYPE		18.4 mm			1.8
M29W640GT7AN6E	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	SMALL OUTLINE, THIN PROFILE		8			.5 mm	85 Cel		4MX16	4M	-40 Cel					DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm				67108864 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED			18.4 mm		70 ns	3
MT29F4G08ABADAWP-AATX:DTR	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			536870912 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	105 Cel		512MX8	512M	-40 Cel					DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm				4294967296 bit	2.7 V					SLC NAND TYPE		18.4 mm			3.3
MT29F64G08CFACAWP-Z:C	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			8589934592 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel		8GX8	8G	0 Cel					DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm				68719476736 bit	2.7 V			30	260	MLC NAND TYPE		18.4 mm			3.3
MT29F32G08CBACAWP-ITZ:C	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			4294967296 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		4GX8	4G	-40 Cel					DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm				34359738368 bit	2.7 V			30	260	MLC NAND TYPE		18.4 mm			3.3
MT29F32G08CBACAWP-Z:C	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			4294967296 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel		4GX8	4G	0 Cel					DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm				34359738368 bit	2.7 V			30	260	MLC NAND TYPE		18.4 mm			3.3
MT29F64G08CFACBWP-12Z:C	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS/ASYNCHRONOUS			8589934592 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel		8GX8	8G	0 Cel					DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm				68719476736 bit	2.7 V			30	260	MLC NAND TYPE		18.4 mm			3.3
MT29F16G08ABABAWP-IT:BTR	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			2147483648 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		2GX8	2G	-40 Cel			Matte Tin (Sn)		DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm				17179869184 bit	2.7 V		e3	30	260	SLC NAND TYPE		18.4 mm			2.7
MT29F8G08ABACAWP-AIT:CTR	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	256K	35 mA	1073741824 words	3.3	NO		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20				.5 mm	85 Cel		1GX8	1G	-40 Cel	4K	YES		YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm	60000 Write/Erase Cycles		12 mm				8589934592 bit	2.7 V	4K				SLC NAND TYPE	.0001 Amp	18.4 mm				NO
MT29F32G08ABAAAWP-IT:A	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	1M	50 mA	4294967296 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		4GX8	4G	-40 Cel	4K	YES		YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			34359738368 bit	2.7 V	8K				SLC NAND TYPE	.00001 Amp	18.4 mm		20 ns	3.3	NO
MT29F32G08AFACAWP-ITZ:C	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	512K	50 mA	4294967296 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		4GX8	4G	-40 Cel	8K	YES		YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			34359738368 bit	2.7 V	4K				SLC NAND TYPE		18.4 mm		20 ns	3.3	NO
MT29F2G16ABAEAWP:ETR	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			134217728 words	3.3			16	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel		128MX16	128M	0 Cel					DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm				2147483648 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE		18.4 mm			3.3
MT29F8G08AAAWP:ATR	Micron Technology	FLASH		48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	35 mA	1073741824 words	3.3	NO		8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20			10	.5 mm	70 Cel	3-STATE	1GX8	1G	0 Cel	8K	YES		YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm	100000 Write/Erase Cycles		12 mm				8589934592 bit	2.7 V	2K		30	260	SLC NAND TYPE		18.4 mm			3.3	NO
S29AL016J70TFM020	Infineon Technologies	FLASH		48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words	3	YES		16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8		20	.5 mm	125 Cel	3-STATE	1MX16	1M	-40 Cel	1,2,1,31	YES		YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm	1000000 Write/Erase Cycles		12 mm			BOTTOM	16777216 bit	2.7 V					NOR TYPE	.000005 Amp	18.4 mm	YES	70 ns	3	YES
MT29F256G08CJABAWP:B	Micron Technology	FLASH		48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			34359738368 words	3.3	NO		8	SMALL OUTLINE, THIN PROFILE	TSOP48,.8,20				.5 mm	70 Cel		32GX8	32G	0 Cel		NO		YES	QUAD	HARDWARE	R-PDSO-G48		3.6 V	1.2 mm	3000 Write/Erase Cycles		12 mm				274877906944 bit	2.7 V	8K				MLC NAND TYPE	.00005 Amp	18.4 mm			3.3	NO
AT45DB321D-TU-SL383	Dialog Semiconductor	FLASH		28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		17 mA	33554432 words	3			1	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22			20	.55 mm	85 Cel	3-STATE	32MX1	32M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G28		3.6 V	1.2 mm	100000 Write/Erase Cycles	66 MHz	8 mm		SPI		33554432 bit	2.7 V					NOR TYPE	.00005 Amp	11.8 mm			2.7

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.