TSSOP Flash Memory 105

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
JS28F640J3F75G	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		128K	54 mA	4194304 words		NO	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		4MX16	4M	-40 Cel	64	YES		YES	DUAL		R-PDSO-G56						Not Qualified		67108864 bit			4/8				NOR TYPE	.00012 Amp		YES	75 ns		NO
JS28F640P33TF70A	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,64K	28 mA	4194304 words		NO	2.5/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20		Flash Memories		.5 mm	85 Cel		4MX16	4M	-40 Cel	4,63	YES			DUAL		R-PDSO-G56						Not Qualified	TOP	67108864 bit			8				NOR TYPE	.002 Amp		YES	70 ns		NO
JS48F4400P0VB00A	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,64K	51 mA	33554432 words		NO	1.8,1.8/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20		Flash Memories		.5 mm	85 Cel		32MX16	32M	-40 Cel	8, 510	YES			DUAL		R-PDSO-G56						Not Qualified	BOTTOM	536870912 bit			4				NOR TYPE	.000005 Amp		YES	95 ns		NO
SST39SF040-55-4I-WHE-T	Microchip Technology	FLASH	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K	35 mA	524288 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20		Flash Memories	100	.5 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	128	YES			DUAL	1	R-PDSO-G32		5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified		4194304 bit	4.5 V						NOR TYPE	.0001 Amp	12.4 mm		55 ns	5	YES
SST39SF040-70-4C-WHE-T	Microchip Technology	FLASH	COMMERCIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K	35 mA	524288 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20		Flash Memories	100	.5 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	128	YES			DUAL	1	R-PDSO-G32		5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified		4194304 bit	4.5 V						NOR TYPE	.0001 Amp	12.4 mm		70 ns	5	YES
SST39SF040-70-4I-WHE-T	Microchip Technology	FLASH	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K	35 mA	524288 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20		Flash Memories	100	.5 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	128	YES	MATTE TIN		DUAL	1	R-PDSO-G32	3	5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified		4194304 bit	4.5 V			e3	30	260	NOR TYPE	.0001 Amp	12.4 mm		70 ns	5	YES
JS28F320J3F75E	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		128K	80 mA	2097152 words		NO	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		2MX16	2M	-40 Cel	32	YES		YES	DUAL		R-PDSO-G56						Not Qualified		33554432 bit			4/8		30	260	NOR TYPE	.00012 Amp		YES	75 ns		NO
JS28F128J3F75H	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		128K	80 mA	8388608 words		NO	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		8MX16	8M	-40 Cel	128	YES		YES	DUAL		R-PDSO-G56						Not Qualified		134217728 bit			4/8		30	260	NOR TYPE	.00012 Amp		YES	75 ns		NO
JS28F640P30BF75A	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,64K	50 mA	4194304 words		NO	1.8,1.8/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20		Flash Memories		.5 mm	85 Cel		4MX16	4M	-40 Cel	4,63	YES			DUAL		R-PDSO-G56						Not Qualified	BOTTOM	67108864 bit			8		30	260	NOR TYPE	.000055 Amp		YES	75 ns		NO
JS28F640P30BF75D	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,64K	50 mA	4194304 words		NO	1.8,1.8/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20		Flash Memories		.5 mm	85 Cel		4MX16	4M	-40 Cel	4,63	YES			DUAL		R-PDSO-G56						Not Qualified	BOTTOM	67108864 bit			8				NOR TYPE	.000055 Amp		YES	75 ns		NO
JS28F640P30TF75A	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,64K	50 mA	4194304 words		NO	1.8,1.8/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20		Flash Memories		.5 mm	85 Cel		4MX16	4M	-40 Cel	4,63	YES			DUAL		R-PDSO-G56						Not Qualified	TOP	67108864 bit			8				NOR TYPE	.000055 Amp		YES	75 ns		NO
MT29F16G08AJADAWP:D	Micron Technology	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		128K	35 mA	2147483648 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel		2GX8	2G	0 Cel	16K	YES		YES	DUAL		R-PDSO-G48						Not Qualified		17179869184 bit			2K				SLC NAND TYPE	.0001 Amp			25 ns		NO
MT29F16G08ABACAWP:C	Micron Technology	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		512K	50 mA	2147483648 words		NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel		2GX8	2G	0 Cel	4K	YES		YES	DUAL		R-PDSO-G48						Not Qualified		17179869184 bit			4K				SLC NAND TYPE	.00005 Amp			20 ns		NO
MT29F32G08ABAAAWP:A	Micron Technology	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		1M	50 mA	4294967296 words		NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel		4GX8	4G	0 Cel	4K	YES		YES	DUAL		R-PDSO-G48						Not Qualified		34359738368 bit			8K				SLC NAND TYPE	.00001 Amp			20 ns		NO
MT29F64G08AFAAAWP:A	Micron Technology	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		1M	50 mA	8589934592 words		NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel		8GX8	8G	0 Cel	8K	YES		YES	DUAL		R-PDSO-G48						Not Qualified		68719476736 bit			8K				SLC NAND TYPE	.00001 Amp			20 ns		NO
MT29F128G08AJAAAWP:A	Micron Technology	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		1M	50 mA	17179869184 words		NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel		16GX8	16G	0 Cel	16K	YES		YES	DUAL		R-PDSO-G48						Not Qualified		137438953472 bit			8K				SLC NAND TYPE	.00001 Amp			20 ns		NO
MT29F128G08AJAAAWP-IT:A	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		1M	50 mA	17179869184 words		NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		16GX8	16G	-40 Cel	16K	YES		YES	DUAL		R-PDSO-G48						Not Qualified		137438953472 bit			8K				SLC NAND TYPE	.00001 Amp			20 ns		NO
JS28F00AP30TFA	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,64K	31 mA	67108864 words		NO	1.8,1.8/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20		Flash Memories		.5 mm	85 Cel		64MX16	64M	-40 Cel	4,1023	YES			DUAL		R-PDSO-G56						Not Qualified	TOP	1073741824 bit			16				NOR TYPE	.00024 Amp		YES	110 ns		NO
SST39SF010A-70-4I-WHE-T	Microchip Technology	FLASH	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K	35 mA	131072 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20		Flash Memories	100	.5 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	32	YES	MATTE TIN		DUAL	1	R-PDSO-G32	3	5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified		1048576 bit	4.5 V			e3		260	NOR TYPE	.0001 Amp	12.4 mm		70 ns	5	YES
SST39VF6401B-70-4C-EKE-T	Microchip Technology	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	2K	35 mA	4194304 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories	100	.5 mm	70 Cel	3-STATE	4MX16	4M	0 Cel	2K	YES	MATTE TIN		DUAL	1	R-PDSO-G48		3.6 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified	BOTTOM	67108864 bit	2.7 V			e3			NOR TYPE	.00002 Amp	18.4 mm	YES	70 ns	3	YES
MT29F32G08ABAAAWP-Z:A	Micron Technology	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		1M	50 mA	4294967296 words		NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel		4GX8	4G	0 Cel	4K	YES		YES	DUAL		R-PDSO-G48						Not Qualified		34359738368 bit			8K				SLC NAND TYPE	.00001 Amp			20 ns		NO
MT29F64G08AFAAAWP-Z:A	Micron Technology	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		1M	50 mA	8589934592 words		NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel		8GX8	8G	0 Cel	8K	YES		YES	DUAL		R-PDSO-G48						Not Qualified		68719476736 bit			8K				SLC NAND TYPE	.00001 Amp			20 ns		NO
MT29F128G08AJAAAWP-Z:A	Micron Technology	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		1M	50 mA	17179869184 words		NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel		16GX8	16G	0 Cel	16K	YES		YES	DUAL		R-PDSO-G48						Not Qualified		137438953472 bit			8K				SLC NAND TYPE	.00001 Amp			20 ns		NO
M29W128GSH70N6E	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		128K	20 mA	8388608 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		8MX16	8M	-40 Cel	128	YES		YES	DUAL		R-PDSO-G56						Not Qualified		134217728 bit			8/16				NOR TYPE	.0001 Amp		YES	70 ns		YES
M29W128GSL70N6E	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		128K	20 mA	8388608 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		8MX16	8M	-40 Cel	128	YES		YES	DUAL		R-PDSO-G56						Not Qualified		134217728 bit			8/16				NOR TYPE	.0001 Amp		YES	70 ns		YES
NAND512W3A2SN6E	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			67108864 words	3			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	85 Cel		64MX8	64M	-40 Cel			Nickel/Palladium/Gold (Ni/Pd/Au)		DUAL		R-PDSO-G48	3	3.6 V	1.2 mm		12 mm	Not Qualified		536870912 bit	2.7 V			e4	30	260	SLC NAND TYPE		18.4 mm			3
JS28F128P30BF75A	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	16K,64K	50 mA	8388608 words	1.8	NO	1.8,1.8/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20		Flash Memories		.5 mm	85 Cel		8MX16	8M	-40 Cel	4,127	YES	MATTE TIN		DUAL		R-PDSO-G56		2 V	1.2 mm		14 mm	Not Qualified	BOTTOM	134217728 bit	1.7 V		8	e3			NOR TYPE	.000055 Amp	18.4 mm	YES	75 ns	1.8	NO
TC58NVG1S3ETAI0	Toshiba	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	ASYNCHRONOUS	128K	30 mA	268435456 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		256MX8	256M	-40 Cel	2K	YES		YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm			Not Qualified		2147483648 bit	2.7 V		2K					.00005 Amp	18.4 mm		25 ns	3.3	NO
NAND128W3AABN6E	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			16777216 words	3			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	85 Cel		16MX8	16M	-40 Cel			Matte Tin (Sn)		DUAL		R-PDSO-G48		3.6 V	1.2 mm		12 mm			134217728 bit	2.7 V			e3	30	260	SLC NAND TYPE		18.4 mm		35 ns	3
JS28F064M29EWHA	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	25 mA	4194304 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		4MX16	4M	-40 Cel	128	YES	Matte Tin (Sn)	YES	DUAL		R-PDSO-G56		3.6 V	1.2 mm		14 mm	Not Qualified		67108864 bit	2.7 V		8/16	e3	30	260	NOR TYPE	.00012 Amp	18.4 mm	YES	70 ns	3	YES
JS28F128P30TF75A	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	16K,64K	50 mA	8388608 words	1.8	NO	1.8,1.8/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20		Flash Memories		.5 mm	85 Cel		8MX16	8M	-40 Cel	4,127	YES	MATTE TIN		DUAL		R-PDSO-G56		2 V	1.2 mm		14 mm	Not Qualified	TOP	134217728 bit	1.7 V		8	e3			NOR TYPE	.000055 Amp	18.4 mm	YES	75 ns	1.8	NO
JS28F064M29EWBA	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	25 mA	4194304 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES	MATTE TIN	YES	DUAL		R-PDSO-G56		3.6 V	1.2 mm		14 mm	Not Qualified	BOTTOM	67108864 bit	2.7 V		8/16	e3			NOR TYPE	.00012 Amp	18.4 mm	YES	70 ns	3	YES
MX30LF1G08AA-TI	Macronix	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	128K	30 mA	134217728 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		128MX8	128M	-40 Cel	1K	YES	MATTE TIN	YES	DUAL		R-PDSO-G48	3	3.6 V	1.2 mm		12 mm	Not Qualified		1073741824 bit	2.7 V		2K	e3	30	260	SLC NAND TYPE	.00005 Amp	18.4 mm		25 ns	3.3	NO
JS28F128P33TF70A	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,64K	28 mA	8388608 words	3	NO	2.5/3,3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20		Flash Memories		.5 mm	85 Cel		8MX16	8M	-40 Cel	4,127	YES	MATTE TIN		DUAL		R-PDSO-G56		3.6 V	1.2 mm		14 mm	Not Qualified	TOP	134217728 bit	2.3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	8	e3			NOR TYPE	.002 Amp	18.4 mm	YES	70 ns	3	NO
JS28F256P33BFE	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	16777216 words	3	NO	2.5/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20		Flash Memories		.5 mm	85 Cel		16MX16	16M	-40 Cel	4,255	YES	MATTE TIN		DUAL		R-PDSO-G56		3.6 V	1.2 mm		14 mm	Not Qualified	BOTTOM	268435456 bit	2.3 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE		e3			NOR TYPE	.00021 Amp	18.4 mm	YES	105 ns	2.7	NO
M29W256GH70N3E	Micron Technology	FLASH	AUTOMOTIVE	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			16777216 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	125 Cel		16MX16	16M	-40 Cel			MATTE TIN		DUAL		R-PDSO-G56		3.6 V	1.2 mm		14 mm		BOTTOM/TOP	268435456 bit	2.7 V			e3			NOR TYPE		18.4 mm		70 ns	3
M29DW256G70NF6E	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			16777216 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	85 Cel		16MX16	16M	-40 Cel			MATTE TIN		DUAL		R-PDSO-G56		3.6 V	1.2 mm		14 mm			268435456 bit	2.7 V			e3					18.4 mm		70 ns	3
M29DW256G7ANF6E	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			16777216 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	85 Cel		16MX16	16M	-40 Cel			MATTE TIN		DUAL		R-PDSO-G56		3.6 V	1.2 mm		14 mm			268435456 bit	2.7 V			e3					18.4 mm		70 ns	3
JS28F512M29EWHA	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	128K	31 mA	33554432 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		32MX16	32M	-40 Cel	512	YES	MATTE TIN	YES	DUAL		R-PDSO-G56		3.6 V	1.2 mm		14 mm	Not Qualified		536870912 bit	2.7 V		16/32	e3	30	260	NOR TYPE	.000225 Amp	18.4 mm	YES	110 ns	2.7	YES
JR28F032M29EWBA	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	25 mA	2097152 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	MATTE TIN	YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified	BOTTOM	33554432 bit	2.7 V		8/16	e3			NOR TYPE	.00012 Amp	18.4 mm	YES	75 ns	3	YES
JR28F032M29EWHA	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	25 mA	2097152 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		2MX16	2M	-40 Cel	64	YES	MATTE TIN	YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified		33554432 bit	2.7 V		8/16	e3			NOR TYPE	.00012 Amp	18.4 mm	YES	75 ns	3	YES
JR28F032M29EWLA	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	25 mA	2097152 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		2MX16	2M	-40 Cel	64	YES	MATTE TIN	YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified		33554432 bit	2.7 V		8/16	e3			NOR TYPE	.00012 Amp	18.4 mm	YES	75 ns	3	YES
JR28F032M29EWTA	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	25 mA	2097152 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	MATTE TIN	YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified	TOP	33554432 bit	2.7 V		8/16	e3			NOR TYPE	.00012 Amp	18.4 mm	YES	75 ns	3	YES
JR28F064M29EWBA	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	25 mA	4194304 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES	MATTE TIN	YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified	BOTTOM	67108864 bit	2.7 V		8/16	e3			NOR TYPE	.00012 Amp	18.4 mm	YES	75 ns	3	YES
JR28F064M29EWHA	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	25 mA	4194304 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		4MX16	4M	-40 Cel	128	YES	Matte Tin (Sn)	YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified		67108864 bit	2.7 V		8/16	e3	30	260	NOR TYPE	.00012 Amp	18.4 mm	YES	75 ns	3	YES
JR28F064M29EWLA	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	25 mA	4194304 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		4MX16	4M	-40 Cel	128	YES	MATTE TIN	YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified		67108864 bit	2.7 V		8/16	e3			NOR TYPE	.00012 Amp	18.4 mm	YES	75 ns	3	YES
JR28F064M29EWTA	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	25 mA	4194304 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES	Matte Tin (Sn)	YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified	TOP	67108864 bit	2.7 V		8/16	e3	30	260	NOR TYPE	.00012 Amp	18.4 mm	YES	75 ns	3	YES
JS28F064M29EWLA	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	25 mA	4194304 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		4MX16	4M	-40 Cel	128	YES	Matte Tin (Sn)	YES	DUAL		R-PDSO-G56		3.6 V	1.2 mm		14 mm	Not Qualified		67108864 bit	2.7 V		8/16	e3	30	260	NOR TYPE	.00012 Amp	18.4 mm	YES	75 ns	3	YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.