SQUARE Flash Memory 171

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Programming Voltage (V)
W25Q64JVSSIM	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	25 mA	8388608 words	3.3	8	SMALL OUTLINE	SOP8,.3	1	20	1.27 mm	85 Cel	3-STATE	8MX8	8M	-40 Cel		DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.28 mm	SPI	67108864 bit	3 V	IT ALSO OPERATES AT 2.7V @ 104MHZ		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	5.28 mm	3.3
SST25PF040C-40V/MF	Microchip Technology	FLASH	INDUSTRIAL	10	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	NO LEAD	SERIAL	SYNCHRONOUS	15 mA	4194304 words	3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC10,.12,20		20	.5 mm	105 Cel	3-STATE	4MX1	4M	-40 Cel	MATTE TIN	DUAL	1	SOFTWARE	S-PDSO-N10		3.6 V	1 mm	100000 Write/Erase Cycles	40 MHz	3 mm	SPI	4194304 bit	2.3 V		e3			NOR TYPE	.00001 Amp	3 mm	3.3
SST25PF040CT-40V/MF	Microchip Technology	FLASH	INDUSTRIAL	10	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	NO LEAD	SERIAL	SYNCHRONOUS	15 mA	4194304 words	3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC10,.12,20		20	.5 mm	105 Cel	3-STATE	4MX1	4M	-40 Cel	MATTE TIN	DUAL	1	SOFTWARE	S-PDSO-N10		3.6 V	1 mm	100000 Write/Erase Cycles	40 MHz	3 mm	SPI	4194304 bit	2.3 V		e3			NOR TYPE	.00001 Amp	3 mm	3.3
W25Q16JLSSIG	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		2097152 words	3	8	SMALL OUTLINE		1		1.27 mm	85 Cel		2MX8	2M	-40 Cel		DUAL			S-PDSO-G8		3.6 V	2.16 mm		104 MHz	5.23 mm		16777216 bit	2.7 V	IT ALSO OPERATES AT FREQUENCY 50 MHZ AT SUPPLY VOLTAGE 2.3 TO 2.7 V		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		5.23 mm	2.7
W25Q16JVSSJQ	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		2097152 words		8	SMALL OUTLINE		1		1.27 mm	105 Cel		2MX8	2M	-40 Cel		DUAL			S-PDSO-G8		3.6 V	2.16 mm		133 MHz	5.23 mm		16777216 bit	3 V			NOT SPECIFIED	NOT SPECIFIED			5.23 mm	3
W25Q64JVSSJM	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	25 mA	8388608 words	3.3	8	SMALL OUTLINE	SOP8,.3	1	20	1.27 mm	105 Cel	3-STATE	8MX8	8M	-40 Cel		DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.28 mm	SPI	67108864 bit	3 V	IT ALSO OPERATES AT 2.7V @ 104MHZ		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	5.28 mm	3.3
W25Q64JVSSJQ	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	25 mA	8388608 words	3.3	8	SMALL OUTLINE	SOP8,.3	1	20	1.27 mm	105 Cel	3-STATE	8MX8	8M	-40 Cel		DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.28 mm	SPI	67108864 bit	3 V	IT ALSO OPERATES AT 2.7V @ 104MHZ		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	5.28 mm	3.3
W25Q128JVSJQ	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	25 mA	16777216 words	3.3	8	SMALL OUTLINE	SOP8,.3	4	20	1.27 mm	125 Cel	3-STATE	16MX8	16M	-40 Cel		DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.28 mm	SPI	134217728 bit	3 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00006 Amp	5.28 mm	3.3
IS25LP032D-JBLA3-TR	Integrated Silicon Solution	FLASH	AUTOMOTIVE	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		4194304 words	3	8	SMALL OUTLINE				1.27 mm	125 Cel		4MX8	4M	-40 Cel		DUAL			S-PDSO-G8		3.6 V	2.16 mm		133 MHz	5.28 mm		33554432 bit	2.3 V			NOT SPECIFIED	NOT SPECIFIED			5.28 mm	3
IS25LQ032B-JBLE-TR	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		33554432 words	3	1	SMALL OUTLINE				1.27 mm	105 Cel		32MX1	32M	-40 Cel		DUAL			S-PDSO-G8		3.6 V	2.16 mm		104 MHz	5.28 mm		33554432 bit	2.3 V			NOT SPECIFIED	NOT SPECIFIED			5.28 mm	2.7
IS25WP016D-JBLE-TR	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		2097152 words	1.8	8	SMALL OUTLINE		1		1.27 mm	105 Cel		2MX8	2M	-40 Cel		DUAL			S-PDSO-G8		1.95 V	2.16 mm		133 MHz	5.28 mm		16777216 bit	1.65 V			NOT SPECIFIED	NOT SPECIFIED			5.28 mm	1.8
IS25WP080D-JBLE-TR	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1048576 words	1.8	8	SMALL OUTLINE				1.27 mm	105 Cel		1MX8	1M	-40 Cel		DUAL			S-PDSO-G8		1.95 V	2.16 mm		133 MHz	5.28 mm		8388608 bit	1.65 V			NOT SPECIFIED	NOT SPECIFIED			5.28 mm	1.8
IS25LP064D-JBLE	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		8388608 words	3	8	SMALL OUTLINE		1		1.27 mm	105 Cel		8MX8	8M	-40 Cel		DUAL			S-PDSO-G8		3.6 V	2.16 mm		166 MHz	5.28 mm		67108864 bit	2.7 V			30	250			5.28 mm	3
W25Q128JWSIQ	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	20 mA	16777216 words	1.8	8	SMALL OUTLINE	SOP8,.3	1	20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel		DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		1.95 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.28 mm	SPI	134217728 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	5.28 mm	1.8
W25Q128JWSIM	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	20 mA	16777216 words	1.8	8	SMALL OUTLINE	SOP8,.3		20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel		DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		1.95 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.28 mm	SPI	134217728 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	5.28 mm	1.8
SST25PF040C-40E/MF	Microchip Technology	FLASH	AUTOMOTIVE	10	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	NO LEAD	SERIAL	SYNCHRONOUS	15 mA	4194304 words	3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC10,.12,20		20	.5 mm	125 Cel	3-STATE	4MX1	4M	-40 Cel		DUAL	1	SOFTWARE	S-PDSO-N10		3.6 V	1 mm	100000 Write/Erase Cycles	40 MHz	3 mm	SPI	4194304 bit	2.3 V					NOR TYPE	.00001 Amp	3 mm	3.3
SST25VF080B-50-4I-ZCE	Microchip Technology	FLASH	INDUSTRIAL	16	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	30 mA	8388608 words		1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA16,4X2,20		100	.5 mm	85 Cel	3-STATE	8MX1	8M	-40 Cel		BOTTOM	1	HARDWARE/SOFTWARE	S-PBGA-B16		3.6 V	.4 mm	100000 Write/Erase Cycles	50 MHz	2 mm	SPI	8388608 bit	2.7 V					NOR TYPE	.00003 Amp	2 mm
S25HS02GTFABHV153	Infineon Technologies	FLASH		24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		2147483648 words	1.8	1	GRID ARRAY					105 Cel		2GX1	2G	-40 Cel		BOTTOM			S-PBGA-B24	3	2 V			166 MHz		SPI	2147483648 bit	1.7 V					NOR TYPE			1.8
S26HL02GTFGBHB043	Infineon Technologies	FLASH		24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		SYNCHRONOUS		2147483648 words	3	1	GRID ARRAY					105 Cel		2GX1	2G	-40 Cel		BOTTOM			S-PBGA-B24	3	3.6 V			133 MHz			2147483648 bit	2.7 V					NOR TYPE			3
S26HL02GTFGBHB050	Infineon Technologies	FLASH		24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		SYNCHRONOUS		2147483648 words	3	1	GRID ARRAY					105 Cel		2GX1	2G	-40 Cel		BOTTOM			S-PBGA-B24	3	3.6 V			133 MHz			2147483648 bit	2.7 V					NOR TYPE			3
S26HS02GTFPBHM053	Infineon Technologies	FLASH		24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		SYNCHRONOUS		2147483648 words	1.8	1	GRID ARRAY					125 Cel		2GX1	2G	-40 Cel		BOTTOM			S-PBGA-B24	3	2 V			166 MHz			2147483648 bit	1.7 V					NOR TYPE			1.8
S26HL02GTFGBHM040	Infineon Technologies	FLASH		24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		SYNCHRONOUS		2147483648 words	3	1	GRID ARRAY					125 Cel		2GX1	2G	-40 Cel		BOTTOM			S-PBGA-B24	3	3.6 V			133 MHz			2147483648 bit	2.7 V					NOR TYPE			3
S26HL02GTFGBHM043	Infineon Technologies	FLASH		24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		SYNCHRONOUS		2147483648 words	3	1	GRID ARRAY					125 Cel		2GX1	2G	-40 Cel		BOTTOM			S-PBGA-B24	3	3.6 V			133 MHz			2147483648 bit	2.7 V					NOR TYPE			3
S26HS02GTFPBHB053	Infineon Technologies	FLASH		24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		SYNCHRONOUS		2147483648 words	1.8	1	GRID ARRAY					105 Cel		2GX1	2G	-40 Cel		BOTTOM			S-PBGA-B24	3	2 V			166 MHz			2147483648 bit	1.7 V					NOR TYPE			1.8
S28HS02GTFPBHV053	Infineon Technologies	FLASH		24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		2147483648 words	1.8	1	GRID ARRAY					105 Cel		2GX1	2G	-40 Cel		BOTTOM			S-PBGA-B24	3	2 V			166 MHz			2147483648 bit	1.7 V					NOR TYPE			1.8
S28HS01GTGZBHV033	Infineon Technologies	FLASH		24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		1073741824 words	1.8	1	GRID ARRAY					105 Cel		1GX1	1G	-40 Cel		BOTTOM			S-PBGA-B24	3	2 V			200 MHz		SPI	1073741824 bit	1.7 V					NOR TYPE			1.8
S26HS02GTFPBHM050	Infineon Technologies	FLASH		24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		SYNCHRONOUS		2147483648 words	1.8	1	GRID ARRAY					125 Cel		2GX1	2G	-40 Cel		BOTTOM			S-PBGA-B24	3	2 V			166 MHz			2147483648 bit	1.7 V					NOR TYPE			1.8
S28HS01GTGZBHV030	Infineon Technologies	FLASH		24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		1073741824 words	1.8	1	GRID ARRAY					105 Cel		1GX1	1G	-40 Cel		BOTTOM			S-PBGA-B24	3	2 V			200 MHz		SPI	1073741824 bit	1.7 V					NOR TYPE			1.8
S28HS01GTGZBHM033	Infineon Technologies	FLASH		24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		SYNCHRONOUS		1073741824 words	1.8	1	GRID ARRAY					125 Cel		1GX1	1G	-40 Cel		BOTTOM			S-PBGA-B24	3	2 V			200 MHz		SPI	1073741824 bit	1.7 V					NOR TYPE			1.8
S28HS01GTGZBHM030	Infineon Technologies	FLASH		24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		SYNCHRONOUS		1073741824 words	1.8	1	GRID ARRAY					125 Cel		1GX1	1G	-40 Cel		BOTTOM			S-PBGA-B24	3	2 V			200 MHz		SPI	1073741824 bit	1.7 V					NOR TYPE			1.8
S28HS01GTGZBHI033	Infineon Technologies	FLASH		24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		1073741824 words	1.8	1	GRID ARRAY					85 Cel		1GX1	1G	-40 Cel		BOTTOM			S-PBGA-B24	3	2 V			200 MHz		SPI	1073741824 bit	1.7 V					NOR TYPE			1.8
S26HS02GTFPBHM043	Infineon Technologies	FLASH		24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		SYNCHRONOUS		2147483648 words	1.8	1	GRID ARRAY					125 Cel		2GX1	2G	-40 Cel		BOTTOM			S-PBGA-B24	3	2 V			166 MHz			2147483648 bit	1.7 V					NOR TYPE			1.8
S26HS02GTFPBHM040	Infineon Technologies	FLASH		24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		SYNCHRONOUS		2147483648 words	1.8	1	GRID ARRAY					125 Cel		2GX1	2G	-40 Cel		BOTTOM			S-PBGA-B24	3	2 V			166 MHz			2147483648 bit	1.7 V					NOR TYPE			1.8
S28HS01GTGZBHA033	Infineon Technologies	FLASH		24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		SYNCHRONOUS		1073741824 words	1.8	1	GRID ARRAY					85 Cel		1GX1	1G	-40 Cel		BOTTOM			S-PBGA-B24	3	2 V			200 MHz		SPI	1073741824 bit	1.7 V					NOR TYPE			1.8
S28HS01GTGZBHB030	Infineon Technologies	FLASH		24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		SYNCHRONOUS		1073741824 words	1.8	1	GRID ARRAY					105 Cel		1GX1	1G	-40 Cel		BOTTOM			S-PBGA-B24	3	2 V			200 MHz		SPI	1073741824 bit	1.7 V					NOR TYPE			1.8
S28HS01GTGZBHI030	Infineon Technologies	FLASH		24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS				SYNCHRONOUS		1073741824 words	1.8	1	GRID ARRAY					85 Cel		1GX1	1G	-40 Cel		BOTTOM			S-PBGA-B24	3	2 V			200 MHz		SPI	1073741824 bit	1.7 V					NOR TYPE			1.8
S25HS02GTFABHV150	Infineon Technologies	FLASH		24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		2147483648 words	1.8	1	GRID ARRAY					105 Cel		2GX1	2G	-40 Cel		BOTTOM			S-PBGA-B24	3	2 V			166 MHz			2147483648 bit	1.7 V					NOR TYPE			1.8
S26HS02GTFPBHB043	Infineon Technologies	FLASH		24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		SYNCHRONOUS		2147483648 words	1.8	1	GRID ARRAY					105 Cel		2GX1	2G	-40 Cel		BOTTOM			S-PBGA-B24	3	2 V			166 MHz			2147483648 bit	1.7 V					NOR TYPE			1.8
S26HS02GTFPBHB050	Infineon Technologies	FLASH		24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		SYNCHRONOUS		2147483648 words	1.8	1	GRID ARRAY					105 Cel		2GX1	2G	-40 Cel		BOTTOM			S-PBGA-B24	3	2 V			166 MHz			2147483648 bit	1.7 V					NOR TYPE			1.8
S26HL02GTFGBHB053	Infineon Technologies	FLASH		24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		SYNCHRONOUS		2147483648 words	3	1	GRID ARRAY					105 Cel		2GX1	2G	-40 Cel		BOTTOM			S-PBGA-B24	3	3.6 V			133 MHz			2147483648 bit	2.7 V					NOR TYPE			3
S26HS02GTFPBHB040	Infineon Technologies	FLASH		24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		SYNCHRONOUS		2147483648 words	1.8	1	GRID ARRAY					105 Cel		2GX1	2G	-40 Cel		BOTTOM			S-PBGA-B24	3	2 V			166 MHz			2147483648 bit	1.7 V					NOR TYPE			1.8
S26HL02GTFGBHB040	Infineon Technologies	FLASH		24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		SYNCHRONOUS		2147483648 words	3	1	GRID ARRAY					105 Cel		2GX1	2G	-40 Cel		BOTTOM			S-PBGA-B24	3	3.6 V			133 MHz			2147483648 bit	2.7 V					NOR TYPE			3
S28HS02GTFPBHV050	Infineon Technologies	FLASH		24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		2147483648 words	1.8	1	GRID ARRAY					105 Cel		2GX1	2G	-40 Cel		BOTTOM			S-PBGA-B24	3	2 V			166 MHz			2147483648 bit	1.7 V					NOR TYPE			1.8
S28HS01GTGZBHA030	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	173 mA	134217728 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		25	1 mm	85 Cel	3-STATE	128MX8	128M	-40 Cel		BOTTOM		HARDWARE	S-PBGA-B24	3	2 V	1 mm	300000 Write/Erase Cycles	200 MHz	8 mm	SPI	1073741824 bit	1.7 V					NOR TYPE	.00016 Amp	8 mm	1.8
S25HS512TDPBHB013	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	69 mA	67108864 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		25	1 mm	105 Cel		64MX8	64M	-40 Cel		BOTTOM		HARDWARE	S-PBGA-B24	3	2 V	1 mm	1280000 Write/Erase Cycles	133 MHz	8 mm	SPI	536870912 bit	1.7 V					NOR TYPE	.00034 Amp	8 mm	1.8
S25HS512TDPBHI013	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	69 mA	67108864 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		25	1 mm	85 Cel		64MX8	64M	-40 Cel		BOTTOM		HARDWARE	S-PBGA-B24	3	2 V	1 mm	1280000 Write/Erase Cycles	133 MHz	8 mm	SPI	536870912 bit	1.7 V					NOR TYPE	.00034 Amp	8 mm	1.8
S25HS512TDSBHV013	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	69 mA	67108864 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		25	1 mm	105 Cel		64MX8	64M	-40 Cel		BOTTOM		HARDWARE	S-PBGA-B24	3	2 V	1 mm	1280000 Write/Erase Cycles	166 MHz	8 mm	SPI	536870912 bit	1.7 V					NOR TYPE	.00034 Amp	8 mm	1.8
S25HS512TFABHV013	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	69 mA	67108864 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		25	1 mm	105 Cel		64MX8	64M	-40 Cel		BOTTOM		HARDWARE	S-PBGA-B24	3	2 V	1 mm	1280000 Write/Erase Cycles	166 MHz	8 mm	SPI	536870912 bit	1.7 V					NOR TYPE	.00034 Amp	8 mm	1.8

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.