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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
PC28F128G18FE	Micron Technology	FLASH	OTHER	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	128K	50 mA	8388608 words	1.8	NO	1.8	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel		8MX16	8M	-30 Cel	64	YES	TIN SILVER COPPER		BOTTOM	R-PBGA-B64		2 V	1.2 mm		8 mm	Not Qualified		134217728 bit	1.7 V		e1			NOR TYPE	.000115 Amp	10 mm	YES	96 ns	2.7	NO
M50FW080N5	STMicroelectronics	FLASH	OTHER	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	64K	60 mA	1048576 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories	.5 mm	85 Cel		1MX8	1M	-20 Cel	16	YES	TIN LEAD		DUAL	R-PDSO-G40		3.6 V	1.2 mm		10 mm	Not Qualified		8388608 bit	3 V		e0			NOR TYPE	.0001 Amp	18.4 mm		11 ns	3	NO
M50FLW040AK5G	STMicroelectronics	FLASH	OTHER	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS		60 mA	524288 words	3.3	NO	3.3	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories	1.27 mm	85 Cel		512KX8	512K	-20 Cel	8	YES	MATTE TIN	YES	QUAD	R-PQCC-J32		3.6 V	3.56 mm		11.43 mm	Not Qualified		4194304 bit	3 V		e3			NOR TYPE	.0001 Amp	13.97 mm		11 ns	3	NO
M50FLW040AN5G	STMicroelectronics	FLASH	OTHER	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		60 mA	524288 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories	.5 mm	85 Cel		512KX8	512K	-20 Cel	8	YES		YES	DUAL	R-PDSO-G40		3.6 V	1.2 mm		8 mm	Not Qualified		4194304 bit	3 V			NOT SPECIFIED	260	NOR TYPE	.0001 Amp	18.4 mm		11 ns	3	NO
M50FLW040BN5G	STMicroelectronics	FLASH	OTHER	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		60 mA	524288 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories	.5 mm	85 Cel		512KX8	512K	-20 Cel	8	YES		YES	DUAL	R-PDSO-G40		3.6 V	1.2 mm		8 mm	Not Qualified		4194304 bit	3 V			NOT SPECIFIED	260	NOR TYPE	.0001 Amp	18.4 mm		11 ns	3	NO
M50FLW080AK5G	STMicroelectronics	FLASH	OTHER	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS	4K,64K	60 mA	1048576 words	3.3	NO	3.3	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories	1.27 mm	85 Cel		1MX8	1M	-20 Cel	48,13	YES	TIN		QUAD	R-PQCC-J32		3.6 V	3.56 mm		11.43 mm	Not Qualified		8388608 bit	3 V		e3			NOR TYPE	.0001 Amp	13.97 mm		11 ns	3	NO
M50FLW080AN5G	STMicroelectronics	FLASH	OTHER	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	4K,64K	60 mA	1048576 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories	.5 mm	85 Cel		1MX8	1M	-20 Cel	48,13	YES			DUAL	R-PDSO-G40		3.6 V	1.2 mm		10 mm	Not Qualified		8388608 bit	3 V			NOT SPECIFIED	260	NOR TYPE	.0001 Amp	18.4 mm		11 ns	3	NO
M50FLW080ANB5G	STMicroelectronics	FLASH	OTHER	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	4K,64K	60 mA	1048576 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20		Flash Memories	.5 mm	85 Cel		1MX8	1M	-20 Cel	48,13	YES	TIN/TIN BISMUTH		DUAL	R-PDSO-G32		3.6 V	1.2 mm		8 mm	Not Qualified		8388608 bit	3 V		e3/e6	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	12.4 mm		11 ns	3	NO
M50FLW080BK5G	STMicroelectronics	FLASH	OTHER	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS	4K,64K	60 mA	1048576 words	3.3	NO	3.3	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories	1.27 mm	85 Cel		1MX8	1M	-20 Cel	48,13	YES	TIN		QUAD	R-PQCC-J32		3.6 V	3.56 mm		11.43 mm	Not Qualified		8388608 bit	3 V		e3			NOR TYPE	.0001 Amp	13.97 mm		11 ns	3	NO
M50FLW080BNB5G	STMicroelectronics	FLASH	OTHER	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	4K,64K	60 mA	1048576 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20		Flash Memories	.5 mm	85 Cel		1MX8	1M	-20 Cel	48,13	YES	TIN/TIN BISMUTH		DUAL	R-PDSO-G32		3.6 V	1.2 mm		8 mm	Not Qualified		8388608 bit	3 V		e3/e6	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	12.4 mm		11 ns	3	NO
M50FW080K5G	STMicroelectronics	FLASH	OTHER	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	64K	60 mA	1048576 words	3.3	NO	3.3	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories	1.27 mm	85 Cel		1MX8	1M	-20 Cel	16	YES	MATTE TIN		QUAD	R-PQCC-J32		3.6 V	3.56 mm		11.43 mm	Not Qualified		8388608 bit	3 V		e3			NOR TYPE	.0001 Amp	13.97 mm		11 ns	3	NO
M50FW080N5G	STMicroelectronics	FLASH	OTHER	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	64K	60 mA	1048576 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories	.5 mm	85 Cel		1MX8	1M	-20 Cel	16	YES	TIN BISMUTH		DUAL	R-PDSO-G40	3	3.6 V	1.2 mm		10 mm	Not Qualified		8388608 bit	3 V		e6			NOR TYPE	.0001 Amp	18.4 mm		11 ns	3	NO
M50FW080NB5G	STMicroelectronics	FLASH	OTHER	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	64K	60 mA	1048576 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20		Flash Memories	.5 mm	85 Cel		1MX8	1M	-20 Cel	16	YES	TIN/TIN BISMUTH		DUAL	R-PDSO-G32		3.6 V	1.2 mm		8 mm	Not Qualified		8388608 bit	3 V		e3/e6	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	12.4 mm		11 ns	3	NO
M50FW016N5G	STMicroelectronics	FLASH	OTHER	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS			2097152 words	3.3			8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel		2MX8	2M	-20 Cel			TIN BISMUTH		DUAL	R-PDSO-G40	3	3.6 V	1.2 mm		10 mm	Not Qualified		16777216 bit	3 V		e6		260	NOR TYPE		18.4 mm		11 ns	3
M50FW040K5G	STMicroelectronics	FLASH	OTHER	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS		60 mA	524288 words	3.3	NO	3.3	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories	1.27 mm	85 Cel		512KX8	512K	-20 Cel	8	YES	MATTE TIN	YES	QUAD	R-PQCC-J32		3.6 V	3.56 mm		11.43 mm	Not Qualified		4194304 bit	3 V		e3			NOR TYPE	.0001 Amp	13.97 mm		11 ns	3	NO
M50FW040N5G	STMicroelectronics	FLASH	OTHER	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		60 mA	524288 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories	.5 mm	85 Cel		512KX8	512K	-20 Cel	8	YES		YES	DUAL	R-PDSO-G40		3.6 V	1.2 mm		10 mm	Not Qualified		4194304 bit	3 V			NOT SPECIFIED	260	NOR TYPE	.0001 Amp	18.4 mm		11 ns	3	NO
M50FW040NB5G	STMicroelectronics	FLASH	OTHER	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		60 mA	524288 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20		Flash Memories	.5 mm	85 Cel		512KX8	512K	-20 Cel	8	YES	TIN/TIN BISMUTH	YES	DUAL	R-PDSO-G32		3.6 V	1.2 mm		8 mm	Not Qualified		4194304 bit	3 V		e3/e6	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	14 mm		11 ns	3	NO
M50LPW116N5G	STMicroelectronics	FLASH	OTHER	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	16K,8K,32K,64K,4K	60 mA	2097152 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories	.5 mm	85 Cel		2MX8	2M	-20 Cel	1,2,1,30,16	YES	TIN		DUAL	R-PDSO-G40		3.6 V	1.2 mm		10 mm	Not Qualified	TOP	16777216 bit	3 V		e3			NOR TYPE	.0001 Amp	18.4 mm		11 ns	3	NO
W19B320ABT7H	Winbond Electronics	FLASH	OTHER	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	45 mA	2097152 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		2MX16	2M	-20 Cel	8,63	YES	MATTE TIN	YES	DUAL	R-PDSO-G48	3	3.6 V	1.2 mm		12 mm	Not Qualified	BOTTOM	33554432 bit	2.7 V		e3			NOR TYPE	.000005 Amp	18.4 mm	YES	70 ns	3	YES
MTFC4GLDEA-0MWTTR	Micron Technology	FLASH CARD	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words	3.3	NO		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			.5 mm	85 Cel		4GX8	4G	-25 Cel		NO	TIN SILVER COPPER		BOTTOM	R-PBGA-B153		3.6 V	.8 mm	52 MHz	11.5 mm			34359738368 bit	2.7 V		e1			MLC NAND TYPE		13 mm			3.3	NO
MTFC8GAKAJCN-1MWT	Micron Technology	FLASH CARD	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words	3.3	NO		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			.5 mm	85 Cel	OPEN-DRAIN	8GX8	8G	-25 Cel		NO			BOTTOM	R-PBGA-B153		3.6 V	1 mm		11.5 mm			68719476736 bit	2.7 V	ALSO AVAILABE WITH TAPE AND REEL		NOT SPECIFIED	NOT SPECIFIED	MLC NAND TYPE		13 mm				NO
MTFC4GACAJCN-1MWT	Micron Technology	FLASH CARD	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words	3.3	NO		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			.5 mm	85 Cel	OPEN-DRAIN	4GX8	4G	-25 Cel		NO	TIN SILVER COPPER		BOTTOM	R-PBGA-B153		3.6 V	1 mm		11.5 mm			34359738368 bit	2.7 V	ALSO AVAILABE WITH TAPE AND REEL		30	260	MLC NAND TYPE		13 mm				NO
MTFC4GMDEA-1MWT	Micron Technology	FLASH CARD	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words	3.3	NO		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			.5 mm	85 Cel		4GX8	4G	-25 Cel		NO	TIN SILVER COPPER		BOTTOM	R-PBGA-B153		3.6 V	.8 mm	52 MHz	11.5 mm			34359738368 bit	2.7 V					MLC NAND TYPE		13 mm			3.3	NO
MTFC16GJDEC-2MWT	Micron Technology	FLASH CARD	OTHER	169	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			17179869184 words	3.3	NO		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA169,14X28,20			.5 mm	85 Cel		16GX8	16G	-25 Cel		NO	TIN SILVER COPPER		BOTTOM	R-PBGA-B169		3.6 V	.8 mm	52 MHz	14 mm			137438953472 bit	2.7 V					MLC NAND TYPE		18 mm			3.3	NO
MTFC32GJDED-3MWT	Micron Technology	FLASH CARD	OTHER	169	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			34359738368 words	3.3	NO		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA169,14X28,20			.5 mm	85 Cel		32GX8	32G	-25 Cel		NO	TIN SILVER COPPER		BOTTOM	R-PBGA-B169		3.6 V	1 mm	52 MHz	14 mm			274877906944 bit	2.7 V					MLC NAND TYPE		18 mm			3.3	NO
MTFC4GLDEA-0MWT	Micron Technology	FLASH CARD	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words	3.3	NO		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			.5 mm	85 Cel		4GX8	4G	-25 Cel		NO	TIN SILVER COPPER		BOTTOM	R-PBGA-B153		3.6 V	.8 mm	52 MHz	11.5 mm			34359738368 bit	2.7 V					MLC NAND TYPE		13 mm			3.3	NO
MTFC64GJDDN-3MWT	Micron Technology	FLASH CARD	OTHER	169	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			68719476736 words	3.3	NO		8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA169,14X28,20			.5 mm	85 Cel		64GX8	64G	-25 Cel		NO	TIN SILVER COPPER		BOTTOM	R-PBGA-B169		3.6 V	1.4 mm	52 MHz	14 mm			549755813888 bit	2.7 V					MLC NAND TYPE		18 mm			3.3	NO
MTFC8GLDEA-1MWT	Micron Technology	FLASH CARD	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words	3.3	NO		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			.5 mm	85 Cel		8GX8	8G	-25 Cel		NO	TIN SILVER COPPER NICKEL		BOTTOM	R-PBGA-B153		3.6 V	.8 mm	52 MHz	11.5 mm			68719476736 bit	2.7 V					MLC NAND TYPE		13 mm			3.3	NO
S40410081B1B1W000	Cypress Semiconductor	FLASH	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words	3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		4		.5 mm	85 Cel		8GX8	8G	-25 Cel					BOTTOM	R-PBGA-B153		3.6 V	1 mm		11.5 mm			68719476736 bit	2.7 V					MLC NAND TYPE		13 mm			3
S40410081B1B2W000	Cypress Semiconductor	FLASH	OTHER	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words	3			8	GRID ARRAY, LOW PROFILE		4		1 mm	85 Cel		8GX8	8G	-25 Cel					BOTTOM	R-PBGA-B100		3.6 V	1.4 mm		14 mm			68719476736 bit	2.7 V					MLC NAND TYPE		18 mm			3
S40410161B1B1W010	Cypress Semiconductor	FLASH	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			17179869184 words	3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		4		.5 mm	85 Cel		16GX8	16G	-25 Cel					BOTTOM	R-PBGA-B153		3.6 V	1 mm		11.5 mm			137438953472 bit	2.7 V					MLC NAND TYPE		13 mm			3
S40410161B1B2W010	Cypress Semiconductor	FLASH	OTHER	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			17179869184 words	3			8	GRID ARRAY, LOW PROFILE		4		1 mm	85 Cel		16GX8	16G	-25 Cel					BOTTOM	R-PBGA-B100		3.6 V	1.4 mm		14 mm			137438953472 bit	2.7 V					MLC NAND TYPE		18 mm			3
SFSD4096N2BM1TO-E-GE-2A1-STD	Swissbit Ag	FLASH CARD	OTHER	8	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			4294967296 words	3.3			8	UNCASED CHIP					85 Cel		4GX8	4G	-25 Cel					UPPER	R-XUUC-N8		3.6 V	1.1 mm	100 MHz	11 mm			34359738368 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	MLC NAND TYPE		15 mm			3.3
THGBMHG7C2LBAIL	Toshiba	FLASH	OTHER	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			17179869184 words				8	GRID ARRAY					85 Cel		16GX8	16G	-25 Cel					BOTTOM	R-PBGA-B153		3.6 V						137438953472 bit	2.7 V										2.7
THGBMHG8C4LBAIR	Toshiba	FLASH	OTHER	169	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			34359738368 words				8	GRID ARRAY					85 Cel		32GX8	32G	-25 Cel					BOTTOM	R-PBGA-B169		3.6 V						274877906944 bit	2.7 V										2.7
SFSD4096N1BW1MT-E-DF-111-STD	Swissbit Ag	FLASH CARD	OTHER	8	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			4294967296 words	3.3			8	UNCASED CHIP					85 Cel		4GX8	4G	-25 Cel					UPPER	R-XUUC-N8		3.6 V	1 mm	50 MHz	11 mm			34359738368 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED			15 mm			3.3
MTFC2GMDEA-0MWTA	Micron Technology	FLASH	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			2147483648 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel		2GX8	2G	-25 Cel			TIN SILVER COPPER NICKEL		BOTTOM	R-PBGA-B153		3.6 V	.8 mm	52 MHz	11.5 mm			17179869184 bit	2.7 V	ALSO HAVING MMC CONTROLLER	e2	30	260			13 mm			3.3
THGBMJG6C1LBAIL	Kioxia Holdings	FLASH CARD	OTHER	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL					8589934592 words				8	GRID ARRAY	BGA153,14X14,20			.5 mm	85 Cel		8GX8	8G	-25 Cel					BOTTOM	R-PBGA-B153		3.6 V			11 mm			68719476736 bit	2.7 V							13 mm
THGBMJG8C2LBAIL	Kioxia Holdings	FLASH CARD	OTHER	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL					34359738368 words				8	GRID ARRAY	BGA153,14X14,20			.5 mm	85 Cel		32GX8	32G	-25 Cel					BOTTOM	R-PBGA-B153		3.6 V			11 mm			274877906944 bit	2.7 V							13 mm
FEMC032GTTE7-T13-26	Flexxon Global	FLASH CARD	OTHER	100		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL					34359738368 words	3.3			8						85 Cel		32GX8	32G	-25 Cel					BOTTOM	R-PBGA-B100								274877906944 bit						MLC NAND TYPE
FEMC064GTTE7-T14-46	Flexxon Global	FLASH CARD	OTHER	153		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL					68719476736 words	3.3			8						85 Cel		64GX8	64G	-25 Cel					BOTTOM	R-PBGA-B153								549755813888 bit						MLC NAND TYPE
FEMC008GTTE7-T13-17	Flexxon Global	FLASH CARD	OTHER	100		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL					8589934592 words	3.3			8						85 Cel		8GX8	8G	-25 Cel					BOTTOM	R-PBGA-B100								68719476736 bit						SLC NAND TYPE
FEMC016GTTE7-T13-27	Flexxon Global	FLASH CARD	OTHER	100		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL					17179869184 words	3.3			8						85 Cel		16GX8	16G	-25 Cel					BOTTOM	R-PBGA-B100								137438953472 bit						SLC NAND TYPE
FEMC016GTTE7-T14-16	Flexxon Global	FLASH CARD	OTHER	153		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL					17179869184 words	3.3			8						85 Cel		16GX8	16G	-25 Cel					BOTTOM	R-PBGA-B153								137438953472 bit						MLC NAND TYPE
FEMC002GTTE7-T14-17	Flexxon Global	FLASH CARD	OTHER	153		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL					2147483648 words	3.3			8						85 Cel		2GX8	2G	-25 Cel					BOTTOM	R-PBGA-B153								17179869184 bit						SLC NAND TYPE
FEMC004GTTE7-T13-17	Flexxon Global	FLASH CARD	OTHER	100		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL					4294967296 words	3.3			8						85 Cel		4GX8	4G	-25 Cel					BOTTOM	R-PBGA-B100								34359738368 bit						SLC NAND TYPE
FEMC004GTTE7-T14-16	Flexxon Global	FLASH CARD	OTHER	153		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL					4294967296 words	3.3			8						85 Cel		4GX8	4G	-25 Cel					BOTTOM	R-PBGA-B153								34359738368 bit						MLC NAND TYPE
FEMC008GTTE7-T13-16	Flexxon Global	FLASH CARD	OTHER	100		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL					8589934592 words	3.3			8						85 Cel		8GX8	8G	-25 Cel					BOTTOM	R-PBGA-B100								68719476736 bit						MLC NAND TYPE

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.