Macronix Flash Memory 67

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Position	Write Protection	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Programming Voltage (V)
MX25L12845GXCI-08G	Macronix	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		33554432 words	3	4	GRID ARRAY, THIN PROFILE		2		1 mm	85 Cel		32MX4	32M	-40 Cel	BOTTOM		R-PBGA-B24	3.6 V	1.2 mm		120 MHz	6 mm		134217728 bit	2.7 V	CAN BE ORGANISED AS 128 M X 1	NOT SPECIFIED	NOT SPECIFIED			8 mm	3
MX25L12845GXDI-08G	Macronix	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		33554432 words	3	4	GRID ARRAY, THIN PROFILE		2		1 mm	85 Cel		32MX4	32M	-40 Cel	BOTTOM		R-PBGA-B24	3.6 V	1.2 mm		120 MHz	6 mm		134217728 bit	2.7 V	CAN BE ORGANISED AS 128 M X 1	NOT SPECIFIED	NOT SPECIFIED			8 mm	3
MX25L12845GZ2I-08G	Macronix	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		33554432 words	3	4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2		1.27 mm	85 Cel		32MX4	32M	-40 Cel	DUAL		R-PDSO-N8	3.6 V	.8 mm		120 MHz	6 mm		134217728 bit	2.7 V	CAN BE ORGANISED AS 128 M X 1	NOT SPECIFIED	NOT SPECIFIED			8 mm	3
MX25U12835FBBI-10G	Macronix	FLASH	INDUSTRIAL	23	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		33554432 words	1.8	4	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		2		.5 mm	85 Cel		32MX4	32M	-40 Cel	BOTTOM		R-PBGA-B23	2 V	.52 mm		104 MHz			134217728 bit	1.65 V	IT CAN ALSO BE CONFIGURABLE AS 128MX1	NOT SPECIFIED	NOT SPECIFIED				1.8
MX25U12835FM2I-10G	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		33554432 words	1.8	4	SMALL OUTLINE		2		1.27 mm	85 Cel		32MX4	32M	-40 Cel	DUAL		R-PDSO-G8	2 V	2.16 mm		104 MHz	5.23 mm		134217728 bit	1.65 V	IT CAN ALSO BE CONFIGURABLE AS 128MX1	NOT SPECIFIED	NOT SPECIFIED			5.28 mm	1.8
MX25U12835FXDI-10G	Macronix	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		33554432 words	1.8	4	GRID ARRAY, THIN PROFILE		2		1 mm	85 Cel		32MX4	32M	-40 Cel	BOTTOM		R-PBGA-B24	2 V	1.2 mm		104 MHz	6 mm		134217728 bit	1.65 V	IT CAN ALSO BE CONFIGURABLE AS 128MX1	NOT SPECIFIED	NOT SPECIFIED			8 mm	1.8
MX25U51245GXDI0A	Macronix	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	40 mA	67108864 words	1.8	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		20	1 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel	BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	2 V	1.2 mm	100000 Write/Erase Cycles	166 MHz	6 mm	SPI	536870912 bit	1.65 V		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	8 mm	1.8
MX25UM51245GMI00	Macronix	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		67108864 words	1.8	8	SMALL OUTLINE		1		1.27 mm	85 Cel		64MX8	64M	-40 Cel	DUAL		R-PDSO-G16	2 V	2.65 mm		133 MHz	7.52 mm		536870912 bit	1.65 V		NOT SPECIFIED	NOT SPECIFIED			10.3 mm	1.8
MX66L1G45GXDI-08G	Macronix	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		268435456 words	3	4	GRID ARRAY, THIN PROFILE		2		1 mm	85 Cel		256MX4	256M	-40 Cel	BOTTOM		R-PBGA-B24	3.6 V	1.2 mm		166 MHz	6 mm		1073741824 bit	2.7 V	ALSO IT CAN BE CONFIGURED AS 1G X 1 BIT	NOT SPECIFIED	NOT SPECIFIED			8 mm	3
MX25LM51245GMI00	Macronix	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		67108864 words	3	8	SMALL OUTLINE		1		1.27 mm	85 Cel		64MX8	64M	-40 Cel	DUAL		R-PDSO-G16	3.6 V	2.65 mm		133 MHz	7.52 mm		536870912 bit	2.7 V						10.3 mm	3
MX66L2G45GXRI00	Macronix	FLASH	INDUSTRIAL	24	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	130 mA	268435456 words	3	8	GRID ARRAY, LOW PROFILE	BGA24,5X5,40	4	20	1 mm	85 Cel	3-STATE	256MX8	256M	-40 Cel	BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3.6 V	1.3 mm	100000 Write/Erase Cycles	133 MHz	6 mm	SPI	2147483648 bit	2.7 V	IT CAN ALSO CONFIGURED AS 1G X 2 AND 2G X 1	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0006 Amp	8 mm	3
MX25UM25645GMI00	Macronix	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		33554432 words	1.8	8	SMALL OUTLINE		1		1.27 mm	85 Cel		32MX8	32M	-40 Cel	DUAL		R-PDSO-G16	2 V	2.65 mm		133 MHz	7.52 mm		268435456 bit	1.65 V		NOT SPECIFIED	NOT SPECIFIED			10.3 mm	1.8
MX25UM51245GXDIH0	Macronix	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		67108864 words	1.8	8	GRID ARRAY, THIN PROFILE		1		1 mm	85 Cel		64MX8	64M	-40 Cel	BOTTOM		R-PBGA-B24	2 V	1.2 mm		250 MHz	6 mm		536870912 bit	1.7 V		NOT SPECIFIED	NOT SPECIFIED			8 mm	1.8
MX25UM51345GXDI00	Macronix	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		67108864 words	1.8	8	GRID ARRAY, THIN PROFILE		1		1 mm	85 Cel		64MX8	64M	-40 Cel	BOTTOM		R-PBGA-B24	2 V	1.2 mm		200 MHz	6 mm		536870912 bit	1.65 V						8 mm	1.8
MX25U12872FM2I02	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	25 mA	16777216 words	1.8	8	SMALL OUTLINE	SOP8,.3	4	20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel	DUAL	HARDWARE	R-PDSO-G8	2 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.23 mm	SPI	134217728 bit	1.65 V	IT ALSO CAN BE CONFIGURED AS 64M X 2			NOR TYPE	.000005 Amp	5.28 mm	1.8
MX25U12832FZ4I02	Macronix	FLASH		8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	25 mA	16777216 words	1.8	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3		20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel	DUAL	HARDWARE/SOFTWARE	R-XDSO-N8	2 V	.8 mm	100000 Write/Erase Cycles	133 MHz	6 mm	SPI	134217728 bit	1.65 V				NOR TYPE	.000005 Amp	8 mm	1.8
MX25U51245GBFI0A	Macronix	FLASH		68	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	40 mA	67108864 words	1.8	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,8X10,20		20	.4 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel	BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B68	2 V	.44 mm	100000 Write/Erase Cycles	166 MHz		SPI	536870912 bit	1.65 V				NOR TYPE	.00005 Amp		1.8
MX25U25643GM2I00	Macronix	FLASH
MX25V20066M1I02	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	15 mA	262144 words	3	8	SMALL OUTLINE	SOP8,.25		20	1.27 mm	85 Cel	3-STATE	256KX8	256K	-40 Cel	DUAL	HARDWARE	R-PDSO-G8	3.6 V	1.75 mm	100000 Write/Erase Cycles	80 MHz	3.9 mm	SPI	2097152 bit	2.7 V	ALSO AVAILABLE WITH 2.3VMIN@50MHZ			NOR TYPE	.00002 Amp	4.9 mm	3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.