Microchip Technology Flash Memory 71

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Memory Width	Package Style (Meter)	Package Equivalence Code	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Terminal Finish	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
SST26WF064C-104I/SM	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS		25 mA	67108864 words	1.8		1	SMALL OUTLINE	SOP8,.3	100	1.27 mm	85 Cel	3-STATE	64MX1	64M	-40 Cel		MATTE TIN		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	1.95 V	2.03 mm	100000 Write/Erase Cycles	104 MHz	5.25 mm	SPI		67108864 bit	1.65 V		e3			NOR TYPE	.000015 Amp	5.26 mm			1.8
SST25PF040C-40V/MF	Microchip Technology	FLASH	INDUSTRIAL	10	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	NO LEAD	SERIAL	SYNCHRONOUS		15 mA	4194304 words	3.3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC10,.12,20	20	.5 mm	105 Cel	3-STATE	4MX1	4M	-40 Cel		MATTE TIN		DUAL	1	SOFTWARE	S-PDSO-N10	3.6 V	1 mm	100000 Write/Erase Cycles	40 MHz	3 mm	SPI		4194304 bit	2.3 V		e3			NOR TYPE	.00001 Amp	3 mm			3.3
SST25PF040CT-40V/MF	Microchip Technology	FLASH	INDUSTRIAL	10	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	NO LEAD	SERIAL	SYNCHRONOUS		15 mA	4194304 words	3.3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC10,.12,20	20	.5 mm	105 Cel	3-STATE	4MX1	4M	-40 Cel		MATTE TIN		DUAL	1	SOFTWARE	S-PDSO-N10	3.6 V	1 mm	100000 Write/Erase Cycles	40 MHz	3 mm	SPI		4194304 bit	2.3 V		e3			NOR TYPE	.00001 Amp	3 mm			3.3
SST25PF040CT-40V/SN	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS		15 mA	4194304 words	3.3		1	SMALL OUTLINE	SOP8,.23	20	1.27 mm	105 Cel	3-STATE	4MX1	4M	-40 Cel		MATTE TIN		DUAL	1	SOFTWARE	R-PDSO-G8	3.6 V	1.75 mm	100000 Write/Erase Cycles	40 MHz	3.9 mm	SPI		4194304 bit	2.3 V		e3			NOR TYPE	.00001 Amp	4.9 mm			3.3
SST26VF016BEUIT-104I/SN	Microchip Technology	FLASH	INDUSTRIAL	8	LSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS		25 mA	16777216 words	3		1	SMALL OUTLINE, LOW PROFILE	SOP8,.3	100	1.27 mm	85 Cel	3-STATE	16MX1	16M	-40 Cel				DUAL	1	HARDWARE/SOFTWARE	R-PDSO-C48	3.6 V	1.68 mm	100000 Write/Erase Cycles	104 MHz	3.9 mm	SPI		16777216 bit	2.7 V					NOR TYPE	.000025 Amp	4.89 mm			3
SST26WF016BAT-104I/CS	Microchip Technology	FLASH	INDUSTRIAL	8	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	BALL	SERIAL	SYNCHRONOUS		25 mA	16777216 words	1.8		1	GRID ARRAY	BGA8,3X5,23	100	.886 mm	85 Cel	3-STATE	16MX1	16M	-40 Cel				BOTTOM	1	HARDWARE/SOFTWARE	R-PBGA-B8	1.95 V	.64 mm	100000 Write/Erase Cycles	104 MHz		SPI		16777216 bit	1.65 V					NOR TYPE	.000005 Amp				1.8
SST26VF016B-104I/SM70SVAO	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	GULL WING	SERIAL	SYNCHRONOUS		25 mA	16777216 words	3		1	SMALL OUTLINE	SOP8,.3	100	1.27 mm	85 Cel	3-STATE	16MX1	16M	-40 Cel				DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	3.6 V	2.03 mm	100000 Write/Erase Cycles	104 MHz	5.25 mm	SPI		16777216 bit	2.7 V					NOR TYPE	.000045 Amp	5.26 mm			3
SST26VF016B-104I/SN70SVAO	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	GULL WING	SERIAL	SYNCHRONOUS		25 mA	16777216 words	3		1	SMALL OUTLINE	SOP8,.23	100	1.27 mm	85 Cel	3-STATE	16MX1	16M	-40 Cel				DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	3.6 V	1.75 mm	100000 Write/Erase Cycles	104 MHz	3.9 mm	SPI		16777216 bit	2.7 V					NOR TYPE	.000045 Amp	4.9 mm			3
SST26VF016B-104V/SN70SVAO	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	GULL WING	SERIAL	SYNCHRONOUS		25 mA	16777216 words	3		1	SMALL OUTLINE	SOP8,.23	100	1.27 mm	105 Cel	3-STATE	16MX1	16M	-40 Cel				DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	3.6 V	1.75 mm	100000 Write/Erase Cycles	104 MHz	3.9 mm	SPI		16777216 bit	2.7 V					NOR TYPE	.000045 Amp	4.9 mm			3
SST26VF016B-80E/SN70SVAO	Microchip Technology	FLASH	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	GULL WING	SERIAL	SYNCHRONOUS		25 mA	16777216 words	3		1	SMALL OUTLINE	SOP8,.23	100	1.27 mm	125 Cel	3-STATE	16MX1	16M	-40 Cel				DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	3.6 V	1.75 mm	100000 Write/Erase Cycles	104 MHz	3.9 mm	SPI		16777216 bit	2.7 V					NOR TYPE	.000045 Amp	4.9 mm			3
SST26VF016BT-104I/SN70SVAO	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	GULL WING	SERIAL	SYNCHRONOUS		25 mA	16777216 words	3		1	SMALL OUTLINE	SOP8,.23	100	1.27 mm	85 Cel	3-STATE	16MX1	16M	-40 Cel				DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	3.6 V	1.75 mm	100000 Write/Erase Cycles	104 MHz	3.9 mm	SPI		16777216 bit	2.7 V					NOR TYPE	.000045 Amp	4.9 mm			3
SST26VF016BT-80E/SN70SVAO	Microchip Technology	FLASH	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	GULL WING	SERIAL	SYNCHRONOUS		25 mA	16777216 words	3		1	SMALL OUTLINE	SOP8,.23	100	1.27 mm	125 Cel	3-STATE	16MX1	16M	-40 Cel				DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	3.6 V	1.75 mm	100000 Write/Erase Cycles	104 MHz	3.9 mm	SPI		16777216 bit	2.7 V					NOR TYPE	.000045 Amp	4.9 mm			3
SST25PF040C-40E/MF18GVAO	Microchip Technology	FLASH	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		15 mA	524288 words	3.3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	20	1.27 mm	125 Cel	3-STATE	512KX8	512K	-40 Cel				DUAL	1	SOFTWARE	R-PDSO-N8	3.6 V	.8 mm	100000 Write/Erase Cycles	40 MHz	5 mm	SPI		4194304 bit	2.3 V					NOR TYPE	.00001 Amp	6 mm			3.3
SST25PF040C-40V/MF18GVAO	Microchip Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		15 mA	524288 words	3.3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	20	1.27 mm	105 Cel	3-STATE	512KX8	512K	-40 Cel				DUAL	1	SOFTWARE	R-PDSO-N8	3.6 V	.8 mm	100000 Write/Erase Cycles	40 MHz	5 mm	SPI		4194304 bit	2.3 V					NOR TYPE	.00001 Amp	6 mm			3.3
SST25PF040C-40V/SN18GVAO	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		15 mA	524288 words	3.3		8	SMALL OUTLINE	SOP8,.23	20	1.27 mm	105 Cel	3-STATE	512KX8	512K	-40 Cel				DUAL	1	SOFTWARE	R-PDSO-G8	3.6 V	1.75 mm	100000 Write/Erase Cycles	40 MHz	3.9 mm	SPI		4194304 bit	2.3 V					NOR TYPE	.00001 Amp	4.9 mm			3.3
SST25PF040CT-40E/SN18GVAO	Microchip Technology	FLASH	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		15 mA	524288 words	3.3		8	SMALL OUTLINE	SOP8,.23	20	1.27 mm	125 Cel	3-STATE	512KX8	512K	-40 Cel				DUAL	1	SOFTWARE	R-PDSO-G8	3.6 V	1.75 mm	100000 Write/Erase Cycles	40 MHz	3.9 mm	SPI		4194304 bit	2.3 V					NOR TYPE	.00001 Amp	4.9 mm			3.3
SST25PF040CT-40V/NP18GVAO	Microchip Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		15 mA	524288 words	3.3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20	20	.5 mm	105 Cel	3-STATE	512KX8	512K	-40 Cel				DUAL	1	SOFTWARE	R-PDSO-N8	3.6 V	.6 mm	100000 Write/Erase Cycles	40 MHz	2 mm	SPI		4194304 bit	2.3 V					NOR TYPE	.00001 Amp	3 mm			3.3
SST39VF3201C-70-4I-B3KE-T-VAO	Microchip Technology	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	45 mA	2097152 words	3	YES	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	100	.8 mm	85 Cel	3-STATE	2MX16	2M	-40 Cel	8,63		YES	BOTTOM	1		R-PBGA-B48	3.6 V	1.2 mm	100000 Write/Erase Cycles		6 mm		BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK				NOR TYPE	.00005 Amp	8 mm	YES	70 ns	3	YES
SST26VF020A-104I/SN	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		25 mA	2097152 words	3		1	SMALL OUTLINE	SOP8,.23	100	1.27 mm	85 Cel	3-STATE	2MX1	2M	-40 Cel				DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	3.6 V	1.75 mm	100000 Write/Erase Cycles	104 MHz	3.9 mm	SPI		2097152 bit	2.7 V			30	260	NOR TYPE	.00002 Amp	4.9 mm			3
SST26VF016B-80E/SM	Microchip Technology	FLASH	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		25 mA	16777216 words	2.5		1	SMALL OUTLINE	SOP8,.3	100	1.27 mm	125 Cel	3-STATE	16MX1	16M	-40 Cel				DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	3.6 V	2.03 mm	100000 Write/Erase Cycles	80 MHz	5.25 mm	SPI		16777216 bit	2.3 V					NOR TYPE	.000025 Amp	5.26 mm			2.5
SST25PF040C-40E/MF	Microchip Technology	FLASH	AUTOMOTIVE	10	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	NO LEAD	SERIAL	SYNCHRONOUS		15 mA	4194304 words	3.3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC10,.12,20	20	.5 mm	125 Cel	3-STATE	4MX1	4M	-40 Cel				DUAL	1	SOFTWARE	S-PDSO-N10	3.6 V	1 mm	100000 Write/Erase Cycles	40 MHz	3 mm	SPI		4194304 bit	2.3 V					NOR TYPE	.00001 Amp	3 mm			3.3
SST25PF040C-40E/SN	Microchip Technology	FLASH	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS		15 mA	4194304 words	3.3		1	SMALL OUTLINE	SOP8,.23	20	1.27 mm	125 Cel	3-STATE	4MX1	4M	-40 Cel				DUAL	1	SOFTWARE	R-PDSO-G8	3.6 V	1.75 mm	100000 Write/Erase Cycles	40 MHz	3.9 mm	SPI		4194304 bit	2.3 V					NOR TYPE	.00001 Amp	4.9 mm			3.3
SST25VF080B-50-4I-ZCE	Microchip Technology	FLASH	INDUSTRIAL	16	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		30 mA	8388608 words			1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA16,4X2,20	100	.5 mm	85 Cel	3-STATE	8MX1	8M	-40 Cel				BOTTOM	1	HARDWARE/SOFTWARE	S-PBGA-B16	3.6 V	.4 mm	100000 Write/Erase Cycles	50 MHz	2 mm	SPI		8388608 bit	2.7 V					NOR TYPE	.00003 Amp	2 mm

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.