Flash Memory

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Part	Manufacturer	Memory IC Type	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Page Size (words)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
MT29F256G08CJABAWP:B	Micron Technology	FLASH	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		34359738368 words	3.3	NO	8	SMALL OUTLINE, THIN PROFILE	TSOP48,.8,20		.5 mm	70 Cel	32GX8	32G	0 Cel	NO	YES	QUAD	HARDWARE	R-PDSO-G48		3.6 V	1.2 mm	3000 Write/Erase Cycles		12 mm		274877906944 bit	2.7 V	8K	MLC NAND TYPE	.00005 Amp	18.4 mm		3.3	NO
S29GL064N11FFIS30	Infineon Technologies	FLASH	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	4194304 words	3	YES	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	1 mm	85 Cel	4MX16	4M	-40 Cel	NO	YES	BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm		67108864 bit	1.65 V		NOR TYPE		13 mm	110 ns	3	NO
S29GL064N11FFIS43	Infineon Technologies	FLASH	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	4194304 words	3	YES	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	1 mm	85 Cel	4MX16	4M	-40 Cel	NO	YES	BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm		67108864 bit	1.65 V		NOR TYPE		13 mm	110 ns	3	NO
S29GL064N90FFIS13	Infineon Technologies	FLASH	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	4194304 words	3	YES	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	1 mm	85 Cel	4MX16	4M	-40 Cel	NO	YES	BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm		67108864 bit	2.7 V		NOR TYPE		13 mm	90 ns	3	NO
S29GL064N90FFIS22	Infineon Technologies	FLASH	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	4194304 words	3	YES	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	1 mm	85 Cel	4MX16	4M	-40 Cel	NO	YES	BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm		67108864 bit	2.7 V		NOR TYPE		13 mm	90 ns	3	NO
S29GL064N90FFIS23	Infineon Technologies	FLASH	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	4194304 words	3	YES	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	1 mm	85 Cel	4MX16	4M	-40 Cel	NO	YES	BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm		67108864 bit	2.7 V		NOR TYPE		13 mm	90 ns	3	NO
S29GL064N90FFIS32	Infineon Technologies	FLASH	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	4194304 words	3	YES	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	1 mm	85 Cel	4MX16	4M	-40 Cel	NO	YES	BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm		67108864 bit	2.7 V		NOR TYPE		13 mm	90 ns	3	NO
S29GL064N90FFIS33	Infineon Technologies	FLASH	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	4194304 words	3	YES	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	1 mm	85 Cel	4MX16	4M	-40 Cel	NO	YES	BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm		67108864 bit	2.7 V		NOR TYPE		13 mm	90 ns	3	NO
S29GL032N11FFIS22	Infineon Technologies	FLASH	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	2097152 words	3	YES	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	1 mm	85 Cel	2MX16	2M	-40 Cel	NO	YES	BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm		33554432 bit	1.65 V		NOR TYPE		13 mm	110 ns	3	NO
S29GL032N11FFIS30	Infineon Technologies	FLASH	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	2097152 words	3	YES	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	1 mm	85 Cel	2MX16	2M	-40 Cel	NO	YES	BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm		33554432 bit	1.65 V		NOR TYPE		13 mm	110 ns	3	NO
S29GL032N11FFIS32	Infineon Technologies	FLASH	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	2097152 words	3	YES	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	1 mm	85 Cel	2MX16	2M	-40 Cel	NO	YES	BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm		33554432 bit	1.65 V		NOR TYPE		13 mm	110 ns	3	NO
S29GL032N11FFIS42	Infineon Technologies	FLASH	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	2097152 words	3	YES	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	1 mm	85 Cel	2MX16	2M	-40 Cel	NO	YES	BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm		33554432 bit	1.65 V		NOR TYPE		13 mm	110 ns	3	NO
S29GL032N90FFIS12	Infineon Technologies	FLASH	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	2097152 words	3	YES	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	1 mm	85 Cel	2MX16	2M	-40 Cel	NO	YES	BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm		33554432 bit	2.7 V		NOR TYPE		13 mm	90 ns	3	NO
S29GL032N90FFIS13	Infineon Technologies	FLASH	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	2097152 words	3	YES	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	1 mm	85 Cel	2MX16	2M	-40 Cel	NO	YES	BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm		33554432 bit	2.7 V		NOR TYPE		13 mm	90 ns	3	NO
S29GL032N90FFIS32	Infineon Technologies	FLASH	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	2097152 words	3	YES	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	1 mm	85 Cel	2MX16	2M	-40 Cel	NO	YES	BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm		33554432 bit	2.7 V		NOR TYPE		13 mm	90 ns	3	NO
S29GL032N90FFIS33	Infineon Technologies	FLASH	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	2097152 words	3	YES	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	1 mm	85 Cel	2MX16	2M	-40 Cel	NO	YES	BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm		33554432 bit	2.7 V		NOR TYPE		13 mm	90 ns	3	NO
S29GL064N11FFIS12	Infineon Technologies	FLASH	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	4194304 words	3	YES	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	1 mm	85 Cel	4MX16	4M	-40 Cel	NO	YES	BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm		67108864 bit	1.65 V		NOR TYPE		13 mm	110 ns	3	NO
S29GL064N11FFIS40	Infineon Technologies	FLASH	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	4194304 words	3	YES	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	1 mm	85 Cel	4MX16	4M	-40 Cel	NO	YES	BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm		67108864 bit	1.65 V		NOR TYPE		13 mm	110 ns	3	NO
S29GL064N11FFIS42	Infineon Technologies	FLASH	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	4194304 words	3	YES	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	1 mm	85 Cel	4MX16	4M	-40 Cel	NO	YES	BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm		67108864 bit	1.65 V		NOR TYPE		13 mm	110 ns	3	NO
S29GL064N90FFIS12	Infineon Technologies	FLASH	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	4194304 words	3	YES	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	1 mm	85 Cel	4MX16	4M	-40 Cel	NO	YES	BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm		67108864 bit	2.7 V		NOR TYPE		13 mm	90 ns	3	NO
S29GL064N90FFIS20	Infineon Technologies	FLASH	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	4194304 words	3	YES	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	1 mm	85 Cel	4MX16	4M	-40 Cel	NO	YES	BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm		67108864 bit	2.7 V		NOR TYPE		13 mm	90 ns	3	NO
S29GL064N90FFIS40	Infineon Technologies	FLASH	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	4194304 words	3	YES	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	1 mm	85 Cel	4MX16	4M	-40 Cel	NO	YES	BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm		67108864 bit	2.7 V		NOR TYPE		13 mm	90 ns	3	NO
S29GL032N11FFIS33	Infineon Technologies	FLASH	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	2097152 words	3	YES	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	1 mm	85 Cel	2MX16	2M	-40 Cel	NO	YES	BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm		33554432 bit	1.65 V		NOR TYPE		13 mm	110 ns	3	NO
S29GL032N90FFIS10	Infineon Technologies	FLASH	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	2097152 words	3	YES	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	1 mm	85 Cel	2MX16	2M	-40 Cel	NO	YES	BOTTOM		R-PBGA-B64	3	3.6 V	1.4 mm			11 mm		33554432 bit	2.7 V		NOR TYPE		13 mm	90 ns	3	NO
S29GL032N90FFIS42	Infineon Technologies	FLASH	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	2097152 words	3	YES	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	1 mm	85 Cel	2MX16	2M	-40 Cel	NO	YES	BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm		33554432 bit	2.7 V		NOR TYPE		13 mm	90 ns	3	NO
S29GL032N90FFIS43	Infineon Technologies	FLASH	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	2097152 words	3	YES	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	1 mm	85 Cel	2MX16	2M	-40 Cel	NO	YES	BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm		33554432 bit	2.7 V		NOR TYPE		13 mm	90 ns	3	NO
S29GL064N11FFIS10	Infineon Technologies	FLASH	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	4194304 words	3	YES	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	1 mm	85 Cel	4MX16	4M	-40 Cel	NO	YES	BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm		67108864 bit	1.65 V		NOR TYPE		13 mm	110 ns	3	NO
S29GL064N11FFIS13	Infineon Technologies	FLASH	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	4194304 words	3	YES	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	1 mm	85 Cel	4MX16	4M	-40 Cel	NO	YES	BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm		67108864 bit	1.65 V		NOR TYPE		13 mm	110 ns	3	NO
S29GL064N11FFIS20	Infineon Technologies	FLASH	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	4194304 words	3	YES	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	1 mm	85 Cel	4MX16	4M	-40 Cel	NO	YES	BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm		67108864 bit	1.65 V		NOR TYPE		13 mm	110 ns	3	NO
S29GL064N11FFIS22	Infineon Technologies	FLASH	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	4194304 words	3	YES	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	1 mm	85 Cel	4MX16	4M	-40 Cel	NO	YES	BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm		67108864 bit	1.65 V		NOR TYPE		13 mm	110 ns	3	NO
S29GL064N11FFIS32	Infineon Technologies	FLASH	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	4194304 words	3	YES	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	1 mm	85 Cel	4MX16	4M	-40 Cel	NO	YES	BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm		67108864 bit	1.65 V		NOR TYPE		13 mm	110 ns	3	NO
S29GL064N11FFIS33	Infineon Technologies	FLASH	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	4194304 words	3	YES	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	1 mm	85 Cel	4MX16	4M	-40 Cel	NO	YES	BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm		67108864 bit	1.65 V		NOR TYPE		13 mm	110 ns	3	NO
S29GL064N90FFIS10	Infineon Technologies	FLASH	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	4194304 words	3	YES	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	1 mm	85 Cel	4MX16	4M	-40 Cel	NO	YES	BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm		67108864 bit	2.7 V		NOR TYPE		13 mm	90 ns	3	NO
S29GL064N90FFIS30	Infineon Technologies	FLASH	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	4194304 words	3	YES	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	1 mm	85 Cel	4MX16	4M	-40 Cel	NO	YES	BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm		67108864 bit	2.7 V		NOR TYPE		13 mm	90 ns	3	NO
S29GL032N11FFIS13	Infineon Technologies	FLASH	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	2097152 words	3	YES	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	1 mm	85 Cel	2MX16	2M	-40 Cel	NO	YES	BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm		33554432 bit	1.65 V		NOR TYPE		13 mm	110 ns	3	NO
S29GL032N11FFIS23	Infineon Technologies	FLASH	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	2097152 words	3	YES	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	1 mm	85 Cel	2MX16	2M	-40 Cel	NO	YES	BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm		33554432 bit	1.65 V		NOR TYPE		13 mm	110 ns	3	NO
S29GL032N11FFIS43	Infineon Technologies	FLASH	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	2097152 words	3	YES	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	1 mm	85 Cel	2MX16	2M	-40 Cel	NO	YES	BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm		33554432 bit	1.65 V		NOR TYPE		13 mm	110 ns	3	NO
S29GL032N90FFIS40	Infineon Technologies	FLASH	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	2097152 words	3	YES	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	1 mm	85 Cel	2MX16	2M	-40 Cel	NO	YES	BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm		33554432 bit	2.7 V		NOR TYPE		13 mm	90 ns	3	NO
S29GL032N90FFIS20	Infineon Technologies	FLASH	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	2097152 words	3	YES	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	1 mm	85 Cel	2MX16	2M	-40 Cel	NO	YES	BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm		33554432 bit	2.7 V		NOR TYPE		13 mm	90 ns	3	NO
S29GL032N90FFIS23	Infineon Technologies	FLASH	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	2097152 words	3	YES	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	1 mm	85 Cel	2MX16	2M	-40 Cel	NO	YES	BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm		33554432 bit	2.7 V		NOR TYPE		13 mm	90 ns	3	NO
S29GL064N11FFIS23	Infineon Technologies	FLASH	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	4194304 words	3	YES	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	1 mm	85 Cel	4MX16	4M	-40 Cel	NO	YES	BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm		67108864 bit	1.65 V		NOR TYPE		13 mm	110 ns	3	NO
AP-MSD08GIA-1HTM	Apacer Technology	FLASH CARD	8	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		8589934592 words			8	UNCASED CHIP				85 Cel	8GX8	8G	-40 Cel			UPPER		R-XUUC-N8		3.6 V	1.1 mm		208 MHz	11 mm	SPI	68719476736 bit	2.7 V		MLC NAND TYPE		15 mm
ASFC8G31M-51BIN	Alliance Memory	FLASH CARD	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		8589934592 words	3	NO	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20		.5 mm	85 Cel	8GX8	8G	-40 Cel	NO		BOTTOM		R-PBGA-B153		3.6 V	1 mm		200 MHz	11.5 mm		68719476736 bit	2.7 V		MLC NAND TYPE		13 mm		3	NO
MTFC4GLGDQ-AIT	Micron Technology	FLASH	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		4294967296 words		NO	8	GRID ARRAY, LOW PROFILE	BGA100,10X17,40		1 mm	85 Cel	4GX8	4G	-40 Cel	NO		BOTTOM		R-PBGA-B100		3.6 V	1.4 mm		52 MHz	14 mm		34359738368 bit	2.7 V		MLC NAND TYPE		18 mm			NO
MTFC32GJGDQ-AIT	Micron Technology	FLASH	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		34359738368 words		NO	8	GRID ARRAY, LOW PROFILE	BGA100,10X17,40		1 mm	85 Cel	32GX8	32G	-40 Cel	NO		BOTTOM		R-PBGA-B100		3.6 V	1.4 mm		52 MHz	14 mm		274877906944 bit	2.7 V		MLC NAND TYPE		18 mm			NO
S25HS02GTFABHV153	Infineon Technologies	FLASH	24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		2147483648 words	1.8		1	GRID ARRAY				105 Cel	2GX1	2G	-40 Cel			BOTTOM		S-PBGA-B24	3	2 V			166 MHz		SPI	2147483648 bit	1.7 V		NOR TYPE				1.8
S26HL02GTFGBHB043	Infineon Technologies	FLASH	24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		SYNCHRONOUS		2147483648 words	3		1	GRID ARRAY				105 Cel	2GX1	2G	-40 Cel			BOTTOM		S-PBGA-B24	3	3.6 V			133 MHz			2147483648 bit	2.7 V		NOR TYPE				3
S26HL02GTFGBHB050	Infineon Technologies	FLASH	24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		SYNCHRONOUS		2147483648 words	3		1	GRID ARRAY				105 Cel	2GX1	2G	-40 Cel			BOTTOM		S-PBGA-B24	3	3.6 V			133 MHz			2147483648 bit	2.7 V		NOR TYPE				3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.