MEMORY CIRCUIT Other Function Memory ICs 198

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
MR256D08BMA45	Everspin Technologies	MEMORY CIRCUIT	COMMERCIAL	48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS	65 mA	32768 words		3.3	3.3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	70 Cel		32KX8	32K	0 Cel		BOTTOM	S-PBGA-B48		3.6 V	1.35 mm		8 mm	Not Qualified	262144 bit	3 V		40	260	.008 Amp	8 mm	45 ns
MR256A08BCMA35R	Everspin Technologies	MEMORY CIRCUIT	INDUSTRIAL	48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS	65 mA	32768 words		3.3	3.3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel		32KX8	32K	-40 Cel		BOTTOM	S-PBGA-B48	3	3.6 V	1.35 mm		8 mm	Not Qualified	262144 bit	3 V				.007 Amp	8 mm	35 ns
MR256A08BCMA35	Everspin Technologies	MEMORY CIRCUIT	INDUSTRIAL	48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS	65 mA	32768 words		3.3	3.3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel		32KX8	32K	-40 Cel		BOTTOM	S-PBGA-B48	3	3.6 V	1.35 mm		8 mm	Not Qualified	262144 bit	3 V				.007 Amp	8 mm	35 ns
MR256A08BCYS35R	Everspin Technologies	MEMORY CIRCUIT	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	ASYNCHRONOUS	65 mA	32768 words		3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel		32KX8	32K	-40 Cel		DUAL	R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	262144 bit	3 V				.007 Amp	18.41 mm	35 ns
MR256A08BCYS35	Everspin Technologies	MEMORY CIRCUIT	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	ASYNCHRONOUS	65 mA	32768 words		3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel		32KX8	32K	-40 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	262144 bit	3 V		NOT SPECIFIED	NOT SPECIFIED	.007 Amp	18.41 mm	35 ns
MR256A08BMA35R	Everspin Technologies	MEMORY CIRCUIT	COMMERCIAL	48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS	65 mA	32768 words		3.3	3.3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel		32KX8	32K	0 Cel		BOTTOM	S-PBGA-B48		3.6 V	1.35 mm		8 mm	Not Qualified	262144 bit	3 V		NOT SPECIFIED	NOT SPECIFIED	.007 Amp	8 mm	35 ns
MR256A08BMA35	Everspin Technologies	MEMORY CIRCUIT	COMMERCIAL	48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS	65 mA	32768 words		3.3	3.3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel		32KX8	32K	0 Cel		BOTTOM	S-PBGA-B48		3.6 V	1.35 mm		8 mm	Not Qualified	262144 bit	3 V		NOT SPECIFIED	NOT SPECIFIED	.007 Amp	8 mm	35 ns
MR256A08BSO35R	Everspin Technologies	MEMORY CIRCUIT	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	ASYNCHRONOUS	65 mA	32768 words		3.3	3.3	8	SMALL OUTLINE	SOP32,.4	SRAMs	1.25 mm	70 Cel		32KX8	32K	0 Cel		DUAL	R-PDSO-G32		3.6 V	2.54 mm		7.505 mm	Not Qualified	262144 bit	3 V		NOT SPECIFIED	NOT SPECIFIED	.007 Amp	20.726 mm	35 ns
MR256A08BSO35	Everspin Technologies	MEMORY CIRCUIT	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	ASYNCHRONOUS	65 mA	32768 words		3.3	3.3	8	SMALL OUTLINE	SOP32,.4	SRAMs	1.25 mm	70 Cel		32KX8	32K	0 Cel		DUAL	R-PDSO-G32		3.6 V	2.54 mm		7.505 mm	Not Qualified	262144 bit	3 V		NOT SPECIFIED	NOT SPECIFIED	.007 Amp	20.726 mm	35 ns
MR256A08BYS35R	Everspin Technologies	MEMORY CIRCUIT	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	ASYNCHRONOUS	65 mA	32768 words		3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	70 Cel		32KX8	32K	0 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	262144 bit	3 V		NOT SPECIFIED	NOT SPECIFIED	.007 Amp	18.41 mm	35 ns
MR256A08BYS35	Everspin Technologies	MEMORY CIRCUIT	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	ASYNCHRONOUS	65 mA	32768 words		3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	70 Cel		32KX8	32K	0 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	262144 bit	3 V		NOT SPECIFIED	NOT SPECIFIED	.007 Amp	18.41 mm	35 ns
MR0A16AMA35R	Everspin Technologies	MEMORY CIRCUIT	COMMERCIAL	48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS	155 mA	65536 words		3.3	3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel		64KX16	64K	0 Cel		BOTTOM	S-PBGA-B48		3.6 V	1.35 mm		8 mm	Not Qualified	1048576 bit	3 V		NOT SPECIFIED	NOT SPECIFIED	.012 Amp	8 mm	35 ns
NP5Q128A13ESFC0E	Micron Technology	MEMORY CIRCUIT	COMMERCIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	50 mA	134217728 words		3	3/3.3	1	SMALL OUTLINE	SOP16,.4	SRAMs	1.27 mm	70 Cel		128MX1	128M	0 Cel		DUAL	R-PDSO-G16		3.6 V	2.65 mm		7.5 mm	Not Qualified	134217728 bit	2.7 V		NOT SPECIFIED	NOT SPECIFIED	.0002 Amp	10.3 mm
NP5Q128AE3ESFC0E	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	50 mA	16777216 words		3	3/3.3	8	SMALL OUTLINE	SOP16,.4	SRAMs	1.27 mm	85 Cel		16MX8	16M	-40 Cel		DUAL	R-PDSO-G16		3.6 V	2.65 mm		7.5 mm	Not Qualified	134217728 bit	2.7 V		NOT SPECIFIED	NOT SPECIFIED	.0002 Amp	10.3 mm
NP8P128A13B1760E	Micron Technology	MEMORY CIRCUIT	COMMERCIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words		3		8	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		16MX8	16M	0 Cel		BOTTOM	R-PBGA-B64		3.6 V	1.2 mm		8 mm		134217728 bit	2.7 V					10 mm
NP8P128A13BSM60E	Micron Technology	MEMORY CIRCUIT	COMMERCIAL	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		16777216 words		3		8	SMALL OUTLINE, THIN PROFILE			.5 mm	70 Cel		16MX8	16M	0 Cel		DUAL	R-PDSO-G56		3.6 V	1.2 mm		14 mm		134217728 bit	2.7 V					18.4 mm
NP8P128A13T1760E	Micron Technology	MEMORY CIRCUIT	COMMERCIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words		3		8	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		16MX8	16M	0 Cel		BOTTOM	R-PBGA-B64		3.6 V	1.2 mm		8 mm		134217728 bit	2.7 V					10 mm
NP8P128A13TSM60E	Micron Technology	MEMORY CIRCUIT	COMMERCIAL	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		16777216 words		3		8	SMALL OUTLINE, THIN PROFILE			.5 mm	70 Cel		16MX8	16M	0 Cel		DUAL	R-PDSO-G56		3.6 V	1.2 mm		14 mm		134217728 bit	2.7 V					18.4 mm
NP8P128AE3T1760E	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words		3		8	GRID ARRAY, THIN PROFILE			1 mm	85 Cel		16MX8	16M	-40 Cel		BOTTOM	R-PBGA-B64		3.6 V	1.2 mm		8 mm		134217728 bit	2.7 V					10 mm
NP8P128AE3TSM60E	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		16777216 words		3		8	SMALL OUTLINE, THIN PROFILE			.5 mm	85 Cel		16MX8	16M	-40 Cel		DUAL	R-PDSO-G56		3.6 V	1.2 mm		14 mm		134217728 bit	2.7 V					18.4 mm
MR256A08BCSO35	Everspin Technologies	MEMORY CIRCUIT	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	ASYNCHRONOUS	75 mA	32768 words		3.3	3.3	8	SMALL OUTLINE	SOP32,.4	SRAMs	1.25 mm	85 Cel		32KX8	32K	-40 Cel		DUAL	R-PDSO-G32		3.6 V	2.54 mm		7.505 mm	Not Qualified	262144 bit	3 V		NOT SPECIFIED	NOT SPECIFIED	.007 Amp	20.726 mm	35 ns
CC2544RHBT	Texas Instruments	MEMORY CIRCUIT	AUTOMOTIVE		HVQCCN	SQUARE	PLASTIC/EPOXY	YES				NO LEAD								CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE	LCC32,.2SQ,20		.5 mm	125 Cel				-40 Cel	NICKEL PALLADIUM GOLD SILVER	QUAD	S-PQCC-N32	3	3.6 V	1 mm	2496 MHz	5 mm			2 V	e4	30	260		5 mm
LRI64-W4/1GE	STMicroelectronics	MEMORY CIRCUIT	OTHER		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		NO LEAD	ASYNCHRONOUS		64 words				1	UNCASED CHIP				85 Cel		64X1	64	-20 Cel		UPPER	X-XUUC-N		3 V					64 bit	1.5 V
MR2A16AMYS35R	Everspin Technologies	MEMORY CIRCUIT	AUTOMOTIVE	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	ASYNCHRONOUS		262144 words		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	125 Cel		256KX16	256K	-40 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm		4194304 bit	3 V		NOT SPECIFIED	NOT SPECIFIED		18.41 mm
MR2A16AMYS35	Everspin Technologies	MEMORY CIRCUIT	AUTOMOTIVE	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	ASYNCHRONOUS		262144 words		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	125 Cel		256KX16	256K	-40 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm		4194304 bit	3 V		NOT SPECIFIED	NOT SPECIFIED		18.41 mm
MR2A16AVMA35R	Everspin Technologies	MEMORY CIRCUIT	INDUSTRIAL	48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		262144 words		3.3		16	GRID ARRAY, LOW PROFILE, FINE PITCH			.75 mm	105 Cel		256KX16	256K	-40 Cel		BOTTOM	S-PBGA-B48		3.6 V	1.35 mm		8 mm		4194304 bit	3 V		NOT SPECIFIED	NOT SPECIFIED		8 mm
MR20H40CDFR	Everspin Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SYNCHRONOUS	46.5 mA	524288 words		3.3	3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	SRAMs	1.27 mm	85 Cel		512KX8	512K	-40 Cel		DUAL	R-PDSO-N8	3	3.6 V	.9 mm		5 mm	Not Qualified	4194304 bit	3 V				.00075 Amp	6 mm
MB85RS256BPNF-G-JNE1	Fujitsu	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	6 mA	32768 words		3.3	3.3	8	SMALL OUTLINE	SOP8,.25	SRAMs	1.27 mm	85 Cel		32KX8	32K	-40 Cel		DUAL	R-PDSO-G8		3.6 V	1.75 mm		3.9 mm	Not Qualified	262144 bit	2.7 V		NOT SPECIFIED	NOT SPECIFIED	.00005 Amp	5.05 mm
MR10Q010SCR	Everspin Technologies	MEMORY CIRCUIT	COMMERCIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	220 mA	131072 words		3.3	1.8,3.3	8	SMALL OUTLINE	SOP16,.4	SRAMs	1.27 mm	70 Cel		128KX8	128K	0 Cel		DUAL	R-PDSO-G16		3.6 V	2.64 mm		7.52 mm	Not Qualified	1048576 bit	3 V		NOT SPECIFIED	NOT SPECIFIED	.005 Amp	10.34 mm
TMS4C1050-60DJ	Texas Instruments	MEMORY CIRCUIT	COMMERCIAL	20	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND		35 mA			5	5		SMALL OUTLINE	SOJ20/26,.34	Other Memory ICs	1.27 mm	70 Cel				0 Cel		DUAL	R-PDSO-J20						Not Qualified				NOT SPECIFIED	NOT SPECIFIED	.01 Amp		60 ns
XC17S05PD8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SYNCHRONOUS	10 mA	53984 words	COMMON	5	5	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	70 Cel	3-STATE	53984X1	53984	0 Cel	TIN LEAD	DUAL	R-PDIP-T8	1	5.25 V	4.5974 mm	10 MHz	7.62 mm	Not Qualified	53984 bit	4.75 V	e0	30	225	.00005 Amp	9.3599 mm
XC17S05PD8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SYNCHRONOUS	10 mA	53984 words	COMMON	5	5	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	85 Cel	3-STATE	53984X1	53984	-40 Cel	TIN LEAD	DUAL	R-PDIP-T8	1	5.5 V	4.5974 mm	10 MHz	7.62 mm	Not Qualified	53984 bit	4.5 V	e0	30	225	.00005 Amp	9.3599 mm
XC17S05XLPD8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SYNCHRONOUS	5 mA	54544 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	70 Cel	3-STATE	54544X1	54544	0 Cel	TIN LEAD	DUAL	R-PDIP-T8	1	3.6 V	4.5974 mm	10 MHz	7.62 mm	Not Qualified	54544 bit	3 V	e0	30	225	.00005 Amp	9.3599 mm
XC17S10PD8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SYNCHRONOUS	10 mA	95008 words	COMMON	5	5	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	70 Cel	3-STATE	95008X1	95008	0 Cel	TIN LEAD	DUAL	R-PDIP-T8	1	5.25 V	4.5974 mm	10 MHz	7.62 mm	Not Qualified	95008 bit	4.75 V	e0	30	225	.00005 Amp	9.3599 mm
XC17S10PD8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SYNCHRONOUS	10 mA	95008 words	COMMON	5	5	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	85 Cel	3-STATE	95008X1	95008	-40 Cel	TIN LEAD	DUAL	R-PDIP-T8	1	5.5 V	4.5974 mm	10 MHz	7.62 mm	Not Qualified	95008 bit	4.5 V	e0	30	225	.00005 Amp	9.3599 mm
XC17S10XLPD8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SYNCHRONOUS	5 mA	95752 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	70 Cel	3-STATE	95752X1	95752	0 Cel	TIN LEAD	DUAL	R-PDIP-T8	1	3.6 V	4.5974 mm	10 MHz	7.62 mm	Not Qualified	95752 bit	3 V	e0	30	225	.00005 Amp	9.3599 mm
XC17S10XLPD8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SYNCHRONOUS	5 mA	95752 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	85 Cel	3-STATE	95752X1	95752	-40 Cel	TIN LEAD	DUAL	R-PDIP-T8	1	3.6 V	4.5974 mm	10 MHz	7.62 mm	Not Qualified	95752 bit	3 V	e0	30	225	.00005 Amp	9.3599 mm
XC17S20PD8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SYNCHRONOUS	10 mA	178144 words	COMMON	5	5	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	70 Cel	3-STATE	178144X1	178144	0 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDIP-T8	1	5.25 V	4.5974 mm	10 MHz	7.62 mm	Not Qualified	178144 bit	4.75 V	e0	30	225	.00005 Amp	9.3599 mm
XC17S20PD8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SYNCHRONOUS	10 mA	178144 words	COMMON	5	5	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	85 Cel	3-STATE	178144X1	178144	-40 Cel	TIN LEAD	DUAL	R-PDIP-T8	1	5.5 V	4.5974 mm	10 MHz	7.62 mm	Not Qualified	178144 bit	4.5 V	e0	30	225	.00005 Amp	9.3599 mm
XC17S20XLPD8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SYNCHRONOUS	5 mA	179160 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	70 Cel	3-STATE	179160X1	179160	0 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDIP-T8	1	3.6 V	4.5974 mm	10 MHz	7.62 mm	Not Qualified	179160 bit	3 V	e0	30	225	.00005 Amp	9.3599 mm
XC17S20XLPD8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SYNCHRONOUS	5 mA	179160 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	85 Cel	3-STATE	179160X1	179160	-40 Cel	TIN LEAD	DUAL	R-PDIP-T8	1	3.6 V	4.5974 mm	10 MHz	7.62 mm	Not Qualified	179160 bit	3 V	e0	30	225	.00005 Amp	9.3599 mm
XC17S30PD8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SYNCHRONOUS	10 mA	247968 words	COMMON	5	5	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	70 Cel	3-STATE	247968X1	247968	0 Cel	TIN LEAD	DUAL	R-PDIP-T8	1	5.25 V	4.5974 mm	10 MHz	7.62 mm	Not Qualified	247968 bit	4.75 V	e0	30	225	.00005 Amp	9.3599 mm
XC17S30PD8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SYNCHRONOUS	10 mA	247968 words	COMMON	5	5	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	85 Cel	3-STATE	247968X1	247968	-40 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDIP-T8	1	5.5 V	4.5974 mm	10 MHz	7.62 mm	Not Qualified	247968 bit	4.5 V	e0	30	225	.00005 Amp	9.3599 mm
XC17S30XLPD8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SYNCHRONOUS	5 mA	249168 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	70 Cel	3-STATE	249168X1	249168	0 Cel	TIN LEAD	DUAL	R-PDIP-T8	1	3.6 V	4.5974 mm	10 MHz	7.62 mm	Not Qualified	249168 bit	3 V	e0	30	225	.00005 Amp	9.3599 mm
XC17S30XLPD8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SYNCHRONOUS	5 mA	249168 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	85 Cel	3-STATE	249168X1	249168	-40 Cel	TIN LEAD	DUAL	R-PDIP-T8	1	3.6 V	4.5974 mm	10 MHz	7.62 mm	Not Qualified	249168 bit	3 V	e0	30	225	.00005 Amp	9.3599 mm
XC17S40PD8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SYNCHRONOUS	10 mA	329312 words	COMMON	5	5	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	70 Cel	3-STATE	329312X1	329312	0 Cel	TIN LEAD	DUAL	R-PDIP-T8	1	5.25 V	4.5974 mm	10 MHz	7.62 mm	Not Qualified	329312 bit	4.75 V	e0	30	225	.00005 Amp	9.3599 mm
XC17S40PD8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SYNCHRONOUS	10 mA	329312 words	COMMON	5	5	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	85 Cel	3-STATE	329312X1	329312	-40 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDIP-T8	1	5.5 V	4.5974 mm	10 MHz	7.62 mm	Not Qualified	329312 bit	4.5 V	e0	30	225	.00005 Amp	9.3599 mm
XC17S40XLPD8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SYNCHRONOUS	5 mA	330696 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	70 Cel	3-STATE	330696X1	330696	0 Cel	TIN LEAD	DUAL	R-PDIP-T8	1	3.6 V	4.5974 mm	10 MHz	7.62 mm	Not Qualified	330696 bit	3 V	e0	30	225	.00005 Amp	9.3599 mm

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.