DIP Other Function Memory ICs 25

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
XC17S05PD8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SYNCHRONOUS	10 mA	53984 words	COMMON	5		5	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	70 Cel	3-STATE	53984X1	53984	0 Cel	TIN LEAD	DUAL		R-PDIP-T8	1	5.25 V	4.5974 mm	10 MHz	7.62 mm	Not Qualified	53984 bit	4.75 V	e0	30	225	.00005 Amp	9.3599 mm
XC17S05PD8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SYNCHRONOUS	10 mA	53984 words	COMMON	5		5	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	85 Cel	3-STATE	53984X1	53984	-40 Cel	TIN LEAD	DUAL		R-PDIP-T8	1	5.5 V	4.5974 mm	10 MHz	7.62 mm	Not Qualified	53984 bit	4.5 V	e0	30	225	.00005 Amp	9.3599 mm
XC17S05XLPD8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SYNCHRONOUS	5 mA	54544 words	COMMON	3.3		3.3	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	70 Cel	3-STATE	54544X1	54544	0 Cel	TIN LEAD	DUAL		R-PDIP-T8	1	3.6 V	4.5974 mm	10 MHz	7.62 mm	Not Qualified	54544 bit	3 V	e0	30	225	.00005 Amp	9.3599 mm
XC17S10PD8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SYNCHRONOUS	10 mA	95008 words	COMMON	5		5	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	70 Cel	3-STATE	95008X1	95008	0 Cel	TIN LEAD	DUAL		R-PDIP-T8	1	5.25 V	4.5974 mm	10 MHz	7.62 mm	Not Qualified	95008 bit	4.75 V	e0	30	225	.00005 Amp	9.3599 mm
XC17S10PD8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SYNCHRONOUS	10 mA	95008 words	COMMON	5		5	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	85 Cel	3-STATE	95008X1	95008	-40 Cel	TIN LEAD	DUAL		R-PDIP-T8	1	5.5 V	4.5974 mm	10 MHz	7.62 mm	Not Qualified	95008 bit	4.5 V	e0	30	225	.00005 Amp	9.3599 mm
XC17S10XLPD8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SYNCHRONOUS	5 mA	95752 words	COMMON	3.3		3.3	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	70 Cel	3-STATE	95752X1	95752	0 Cel	TIN LEAD	DUAL		R-PDIP-T8	1	3.6 V	4.5974 mm	10 MHz	7.62 mm	Not Qualified	95752 bit	3 V	e0	30	225	.00005 Amp	9.3599 mm
XC17S10XLPD8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SYNCHRONOUS	5 mA	95752 words	COMMON	3.3		3.3	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	85 Cel	3-STATE	95752X1	95752	-40 Cel	TIN LEAD	DUAL		R-PDIP-T8	1	3.6 V	4.5974 mm	10 MHz	7.62 mm	Not Qualified	95752 bit	3 V	e0	30	225	.00005 Amp	9.3599 mm
XC17S20PD8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SYNCHRONOUS	10 mA	178144 words	COMMON	5		5	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	70 Cel	3-STATE	178144X1	178144	0 Cel	Tin/Lead (Sn85Pb15)	DUAL		R-PDIP-T8	1	5.25 V	4.5974 mm	10 MHz	7.62 mm	Not Qualified	178144 bit	4.75 V	e0	30	225	.00005 Amp	9.3599 mm
XC17S20PD8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SYNCHRONOUS	10 mA	178144 words	COMMON	5		5	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	85 Cel	3-STATE	178144X1	178144	-40 Cel	TIN LEAD	DUAL		R-PDIP-T8	1	5.5 V	4.5974 mm	10 MHz	7.62 mm	Not Qualified	178144 bit	4.5 V	e0	30	225	.00005 Amp	9.3599 mm
XC17S20XLPD8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SYNCHRONOUS	5 mA	179160 words	COMMON	3.3		3.3	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	70 Cel	3-STATE	179160X1	179160	0 Cel	Tin/Lead (Sn85Pb15)	DUAL		R-PDIP-T8	1	3.6 V	4.5974 mm	10 MHz	7.62 mm	Not Qualified	179160 bit	3 V	e0	30	225	.00005 Amp	9.3599 mm
XC17S20XLPD8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SYNCHRONOUS	5 mA	179160 words	COMMON	3.3		3.3	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	85 Cel	3-STATE	179160X1	179160	-40 Cel	TIN LEAD	DUAL		R-PDIP-T8	1	3.6 V	4.5974 mm	10 MHz	7.62 mm	Not Qualified	179160 bit	3 V	e0	30	225	.00005 Amp	9.3599 mm
XC17S30PD8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SYNCHRONOUS	10 mA	247968 words	COMMON	5		5	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	70 Cel	3-STATE	247968X1	247968	0 Cel	TIN LEAD	DUAL		R-PDIP-T8	1	5.25 V	4.5974 mm	10 MHz	7.62 mm	Not Qualified	247968 bit	4.75 V	e0	30	225	.00005 Amp	9.3599 mm
XC17S30PD8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SYNCHRONOUS	10 mA	247968 words	COMMON	5		5	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	85 Cel	3-STATE	247968X1	247968	-40 Cel	Tin/Lead (Sn85Pb15)	DUAL		R-PDIP-T8	1	5.5 V	4.5974 mm	10 MHz	7.62 mm	Not Qualified	247968 bit	4.5 V	e0	30	225	.00005 Amp	9.3599 mm
XC17S30XLPD8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SYNCHRONOUS	5 mA	249168 words	COMMON	3.3		3.3	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	70 Cel	3-STATE	249168X1	249168	0 Cel	TIN LEAD	DUAL		R-PDIP-T8	1	3.6 V	4.5974 mm	10 MHz	7.62 mm	Not Qualified	249168 bit	3 V	e0	30	225	.00005 Amp	9.3599 mm
XC17S30XLPD8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SYNCHRONOUS	5 mA	249168 words	COMMON	3.3		3.3	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	85 Cel	3-STATE	249168X1	249168	-40 Cel	TIN LEAD	DUAL		R-PDIP-T8	1	3.6 V	4.5974 mm	10 MHz	7.62 mm	Not Qualified	249168 bit	3 V	e0	30	225	.00005 Amp	9.3599 mm
XC17S40PD8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SYNCHRONOUS	10 mA	329312 words	COMMON	5		5	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	70 Cel	3-STATE	329312X1	329312	0 Cel	TIN LEAD	DUAL		R-PDIP-T8	1	5.25 V	4.5974 mm	10 MHz	7.62 mm	Not Qualified	329312 bit	4.75 V	e0	30	225	.00005 Amp	9.3599 mm
XC17S40PD8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SYNCHRONOUS	10 mA	329312 words	COMMON	5		5	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	85 Cel	3-STATE	329312X1	329312	-40 Cel	Tin/Lead (Sn85Pb15)	DUAL		R-PDIP-T8	1	5.5 V	4.5974 mm	10 MHz	7.62 mm	Not Qualified	329312 bit	4.5 V	e0	30	225	.00005 Amp	9.3599 mm
XC17S40XLPD8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SYNCHRONOUS	5 mA	330696 words	COMMON	3.3		3.3	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	70 Cel	3-STATE	330696X1	330696	0 Cel	TIN LEAD	DUAL		R-PDIP-T8	1	3.6 V	4.5974 mm	10 MHz	7.62 mm	Not Qualified	330696 bit	3 V	e0	30	225	.00005 Amp	9.3599 mm
XC17S40XLPD8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SYNCHRONOUS	5 mA	330696 words	COMMON	3.3		3.3	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	85 Cel	3-STATE	330696X1	330696	-40 Cel	TIN LEAD	DUAL		R-PDIP-T8	1	3.6 V	4.5974 mm	10 MHz	7.62 mm	Not Qualified	330696 bit	3 V	e0	30	225	.00005 Amp	9.3599 mm
XC17S150XLPD8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SYNCHRONOUS	5 mA	1040128 words	COMMON	3.3		3.3	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	70 Cel	3-STATE	1040128X1	1040128	0 Cel	TIN LEAD	DUAL		R-PDIP-T8	1	3.6 V	4.5974 mm	10 MHz	7.62 mm	Not Qualified	1040128 bit	3 V	e0	30	225	.00005 Amp	9.3599 mm
XC17S10XLPDG8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SYNCHRONOUS	5 mA	95752 words	COMMON	3.3		3.3	1	IN-LINE	TSOP8,.25	OTP ROMs	2.54 mm	70 Cel	3-STATE	95752X1	95752	0 Cel	Matte Tin (Sn)	DUAL		R-PDIP-T8	1	3.6 V	4.5974 mm	10 MHz	7.62 mm	Not Qualified	95752 bit	3 V	e3	30	250	.00005 Amp	9.3599 mm
XC17S30XLPDG8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SYNCHRONOUS	5 mA	249168 words	COMMON	3.3		3.3	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	70 Cel	3-STATE	249168X1	249168	0 Cel	Matte Tin (Sn)	DUAL		R-PDIP-T8	1	3.6 V	4.5974 mm	10 MHz	7.62 mm	Not Qualified	249168 bit	3 V	e3	30	250	.00005 Amp	9.3599 mm
XC17S40XLPDG8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SYNCHRONOUS	5 mA	330696 words	COMMON	3.3		3.3	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	70 Cel	3-STATE	330696X1	330696	0 Cel	Matte Tin (Sn)	DUAL		R-PDIP-T8	1	3.6 V	4.5974 mm	10 MHz	7.62 mm	Not Qualified	330696 bit	3 V	e3	30	250	.00005 Amp	9.3599 mm
47L16-E/P	Microchip Technology	MEMORY CIRCUIT	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SYNCHRONOUS		2048 words			EEPROM+SRAM		8	IN-LINE	DIP8,.3		2.54 mm	125 Cel		2KX8	2K	-40 Cel	MATTE TIN	DUAL	1	R-PDIP-T8		3.6 V	5.334 mm		7.62 mm		16384 bit	2.7 V	e3				9.271 mm	400 ns
MR45V200BRAZAARL	Lapis Semiconductor	MEMORY CIRCUIT	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SYNCHRONOUS		262144 words		3.3			8	IN-LINE			2.54 mm	85 Cel		256KX8	256K	-40 Cel		DUAL		R-PDIP-T8		3.6 V			7.62 mm		2097152 bit	2.7 V					9.2 mm

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.