SOP Other Function Memory ICs 22

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	I2C Control Byte	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
MR256A08BSO35R	Everspin Technologies	MEMORY CIRCUIT	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		ASYNCHRONOUS	65 mA	32768 words		3.3		3.3	8	SMALL OUTLINE	SOP32,.4	SRAMs		1.25 mm	70 Cel		32KX8	32K	0 Cel			DUAL			R-PDSO-G32		3.6 V	2.54 mm			7.505 mm	Not Qualified		262144 bit	3 V			NOT SPECIFIED	NOT SPECIFIED	.007 Amp	20.726 mm	35 ns
MR256A08BSO35	Everspin Technologies	MEMORY CIRCUIT	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		ASYNCHRONOUS	65 mA	32768 words		3.3		3.3	8	SMALL OUTLINE	SOP32,.4	SRAMs		1.25 mm	70 Cel		32KX8	32K	0 Cel			DUAL			R-PDSO-G32		3.6 V	2.54 mm			7.505 mm	Not Qualified		262144 bit	3 V			NOT SPECIFIED	NOT SPECIFIED	.007 Amp	20.726 mm	35 ns
NP5Q128A13ESFC0E	Micron Technology	MEMORY CIRCUIT	COMMERCIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS	50 mA	134217728 words		3		3/3.3	1	SMALL OUTLINE	SOP16,.4	SRAMs		1.27 mm	70 Cel		128MX1	128M	0 Cel			DUAL			R-PDSO-G16		3.6 V	2.65 mm			7.5 mm	Not Qualified		134217728 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	.0002 Amp	10.3 mm
NP5Q128AE3ESFC0E	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS	50 mA	16777216 words		3		3/3.3	8	SMALL OUTLINE	SOP16,.4	SRAMs		1.27 mm	85 Cel		16MX8	16M	-40 Cel			DUAL			R-PDSO-G16		3.6 V	2.65 mm			7.5 mm	Not Qualified		134217728 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	.0002 Amp	10.3 mm
MR256A08BCSO35	Everspin Technologies	MEMORY CIRCUIT	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		ASYNCHRONOUS	75 mA	32768 words		3.3		3.3	8	SMALL OUTLINE	SOP32,.4	SRAMs		1.25 mm	85 Cel		32KX8	32K	-40 Cel			DUAL			R-PDSO-G32		3.6 V	2.54 mm			7.505 mm	Not Qualified		262144 bit	3 V			NOT SPECIFIED	NOT SPECIFIED	.007 Amp	20.726 mm	35 ns
MB85RS256BPNF-G-JNE1	Fujitsu	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS	6 mA	32768 words		3.3		3.3	8	SMALL OUTLINE	SOP8,.25	SRAMs		1.27 mm	85 Cel		32KX8	32K	-40 Cel			DUAL			R-PDSO-G8		3.6 V	1.75 mm			3.9 mm	Not Qualified		262144 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	.00005 Amp	5.05 mm
MR10Q010SCR	Everspin Technologies	MEMORY CIRCUIT	COMMERCIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS	220 mA	131072 words		3.3		1.8,3.3	8	SMALL OUTLINE	SOP16,.4	SRAMs		1.27 mm	70 Cel		128KX8	128K	0 Cel			DUAL			R-PDSO-G16		3.6 V	2.64 mm			7.52 mm	Not Qualified		1048576 bit	3 V			NOT SPECIFIED	NOT SPECIFIED	.005 Amp	10.34 mm
XC17S40SO20C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS	10 mA	329312 words	COMMON	5		5	1	SMALL OUTLINE	SOP20,.4	OTP ROMs		1.27 mm	70 Cel	3-STATE	329312X1	329312	0 Cel	TIN LEAD		DUAL			R-PDSO-G20	3	5.25 V	2.65 mm		10 MHz	7.5 mm	Not Qualified		329312 bit	4.75 V		e0	30	225	.00005 Amp	12.8 mm
XC17S40SO20I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS	10 mA	329312 words	COMMON	5		5	1	SMALL OUTLINE	SOP20,.4	OTP ROMs		1.27 mm	85 Cel	3-STATE	329312X1	329312	-40 Cel	TIN LEAD		DUAL			R-PDSO-G20	3	5.5 V	2.65 mm		10 MHz	7.5 mm	Not Qualified		329312 bit	4.5 V		e0	30	225	.00005 Amp	12.8 mm
XC17S40XLSO20C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS	5 mA	330696 words	COMMON	3.3		3.3	1	SMALL OUTLINE	SOP20,.4	OTP ROMs		1.27 mm	70 Cel	3-STATE	330696X1	330696	0 Cel	TIN LEAD		DUAL			R-PDSO-G20	3	3.6 V	2.65 mm		10 MHz	7.5 mm	Not Qualified		330696 bit	3 V		e0	30	225	.00005 Amp	12.8 mm
XC17S40XLSO20I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS	5 mA	330696 words	COMMON	3.3		3.3	1	SMALL OUTLINE	SOP20,.4	OTP ROMs		1.27 mm	85 Cel	3-STATE	330696X1	330696	-40 Cel	TIN LEAD		DUAL			R-PDSO-G20	3	3.6 V	2.65 mm		10 MHz	7.5 mm	Not Qualified		330696 bit	3 V		e0	30	225	.00005 Amp	12.8 mm
SN74LS600ADW	Texas Instruments	MEMORY CIRCUIT	COMMERCIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	TTL	GULL WING		ASYNCHRONOUS		16384 words		5			1	SMALL OUTLINE				1.27 mm	70 Cel		16KX1	16K	0 Cel			DUAL			R-PDSO-G20		5.25 V	2.65 mm			7.5 mm	Not Qualified		16384 bit	4.75 V	DRAM IS CONFIGURED AS 4 K X 1		NOT SPECIFIED	NOT SPECIFIED		12.8 mm
XC17S150XLSO20C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS	5 mA	1040128 words	COMMON	3.3		3.3	1	SMALL OUTLINE	SOP20,.4	OTP ROMs		1.27 mm	70 Cel	3-STATE	1040128X1	1040128	0 Cel	TIN LEAD		DUAL			R-PDSO-G20	3	3.6 V	2.65 mm		10 MHz	7.5 mm	Not Qualified		1040128 bit	3 V		e0	30	225	.00005 Amp	12.8 mm
AT88SC0104C-SU	Atmel	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	5 mA	1024 words		3.3		3/5	1	SMALL OUTLINE	SOP8,.25	EEPROMs	10	1.27 mm	85 Cel		1KX1	1K	-40 Cel	MATTE TIN	1011CCCC	DUAL		SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	100000 Write/Erase Cycles		3.9 mm	Not Qualified	I2C	1024 bit	2.7 V		e3			.0001 Amp	4.925 mm
DLPR100DWC	Texas Instruments	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES			GULL WING				2097152 words				2.5/3.3	8	SMALL OUTLINE	SOP8,.25	OTP ROMs		1.27 mm	85 Cel		2MX8	2M	-40 Cel			DUAL			R-PDSO-G8	3						Not Qualified		16777216 bit				30	260	.00005 Amp
47C04-E/SN	Microchip Technology	MEMORY CIRCUIT	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS		512 words		5	EEPROM+SRAM		8	SMALL OUTLINE	SOP8,.23			1.27 mm	125 Cel		512X8	512	-40 Cel	MATTE TIN		DUAL	1		R-PDSO-G8	3	5.5 V	1.75 mm			3.9 mm			4096 bit	4.5 V		e3	40	260		4.9 mm	400 ns
47C04T-E/SN	Microchip Technology	MEMORY CIRCUIT	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS		512 words		5	EEPROM+SRAM		8	SMALL OUTLINE	SOP8,.23			1.27 mm	125 Cel		512X8	512	-40 Cel	MATTE TIN		DUAL	1		R-PDSO-G8	3	5.5 V	1.75 mm			3.9 mm			4096 bit	4.5 V		e3	40	260		4.9 mm	400 ns
47C16T-I/SN	Microchip Technology	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS		2048 words		5	EEPROM+SRAM		8	SMALL OUTLINE	SOP8,.23			1.27 mm	85 Cel		2KX8	2K	-40 Cel	MATTE TIN		DUAL	1		R-PDSO-G8	3	5.5 V	1.75 mm			3.9 mm			16384 bit	4.5 V		e3	40	260		4.9 mm	400 ns
47L16T-E/SN	Microchip Technology	MEMORY CIRCUIT	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS		2048 words			EEPROM+SRAM		8	SMALL OUTLINE	SOP8,.23			1.27 mm	125 Cel		2KX8	2K	-40 Cel	MATTE TIN		DUAL	1		R-PDSO-G8	3	3.6 V	1.75 mm			3.9 mm			16384 bit	2.7 V		e3	40	260		4.9 mm	400 ns
M24SR64-YMN8T/2	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS		65536 words					1	SMALL OUTLINE				1.27 mm	105 Cel		64KX1	64K	-40 Cel			DUAL			R-PDSO-G8		5.5 V	1.75 mm			3.9 mm			65536 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED		4.9 mm
MB85AS4MTPF-G-BCERE1	Fujitsu	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS		524288 words		3.3			8	SMALL OUTLINE	SOP8,.3			1.27 mm	85 Cel		512KX8	512K	-40 Cel			DUAL			R-PDSO-G8		3.6 V	1.73 mm			5.3 mm			4194304 bit	1.65 V			NOT SPECIFIED	NOT SPECIFIED		5.85 mm
47L64-I/SN	Microchip Technology	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS		8192 words		3.3	EEPROM+SRAM		8	SMALL OUTLINE	SOP8,.23			1.27 mm	85 Cel		8KX8	8K	-40 Cel			DUAL	1		R-PDSO-G8		3.6 V	1.75 mm			3.9 mm			65536 bit	2.7 V						4.9 mm	550 ns

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.