SQUARE Other Function Memory ICs 33

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time
MTFC2GMTEA-WT	Micron Technology		OTHER	153	FBGA	SQUARE	PLASTIC/EPOXY	YES			BALL							1.8/3.3,3/3.3		GRID ARRAY, FINE PITCH	BGA153,14X14,20	Other Memory ICs		.5 mm	85 Cel			-25 Cel		BOTTOM	S-PBGA-B153							Not Qualified	17179869184 bit
MTFC4GMTEA-WT	Micron Technology		OTHER	153	FBGA	SQUARE	PLASTIC/EPOXY	YES			BALL							1.8/3.3,3/3.3		GRID ARRAY, FINE PITCH	BGA153,14X14,20	Other Memory ICs		.5 mm	85 Cel			-25 Cel		BOTTOM	S-PBGA-B153							Not Qualified	34359738368 bit
MR256D08BMA45	Everspin Technologies	MEMORY CIRCUIT	COMMERCIAL	48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS	65 mA	32768 words	3.3		3.3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs		.75 mm	70 Cel	32KX8	32K	0 Cel		BOTTOM	S-PBGA-B48		3.6 V	1.35 mm			8 mm	Not Qualified	262144 bit	3 V			40	260		.008 Amp	8 mm	45 ns
MR256A08BCMA35R	Everspin Technologies	MEMORY CIRCUIT	INDUSTRIAL	48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS	65 mA	32768 words	3.3		3.3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs		.75 mm	85 Cel	32KX8	32K	-40 Cel		BOTTOM	S-PBGA-B48	3	3.6 V	1.35 mm			8 mm	Not Qualified	262144 bit	3 V						.007 Amp	8 mm	35 ns
MR256A08BCMA35	Everspin Technologies	MEMORY CIRCUIT	INDUSTRIAL	48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS	65 mA	32768 words	3.3		3.3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs		.75 mm	85 Cel	32KX8	32K	-40 Cel		BOTTOM	S-PBGA-B48	3	3.6 V	1.35 mm			8 mm	Not Qualified	262144 bit	3 V						.007 Amp	8 mm	35 ns
MR256A08BMA35R	Everspin Technologies	MEMORY CIRCUIT	COMMERCIAL	48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS	65 mA	32768 words	3.3		3.3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs		.75 mm	70 Cel	32KX8	32K	0 Cel		BOTTOM	S-PBGA-B48		3.6 V	1.35 mm			8 mm	Not Qualified	262144 bit	3 V			NOT SPECIFIED	NOT SPECIFIED		.007 Amp	8 mm	35 ns
MR256A08BMA35	Everspin Technologies	MEMORY CIRCUIT	COMMERCIAL	48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS	65 mA	32768 words	3.3		3.3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs		.75 mm	70 Cel	32KX8	32K	0 Cel		BOTTOM	S-PBGA-B48		3.6 V	1.35 mm			8 mm	Not Qualified	262144 bit	3 V			NOT SPECIFIED	NOT SPECIFIED		.007 Amp	8 mm	35 ns
MR0A16AMA35R	Everspin Technologies	MEMORY CIRCUIT	COMMERCIAL	48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS	155 mA	65536 words	3.3		3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs		.75 mm	70 Cel	64KX16	64K	0 Cel		BOTTOM	S-PBGA-B48		3.6 V	1.35 mm			8 mm	Not Qualified	1048576 bit	3 V			NOT SPECIFIED	NOT SPECIFIED		.012 Amp	8 mm	35 ns
CC2544RHBT	Texas Instruments	MEMORY CIRCUIT	AUTOMOTIVE		HVQCCN	SQUARE	PLASTIC/EPOXY	YES			NO LEAD									CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE	LCC32,.2SQ,20			.5 mm	125 Cel			-40 Cel	NICKEL PALLADIUM GOLD SILVER	QUAD	S-PQCC-N32	3	3.6 V	1 mm		2496 MHz	5 mm			2 V		e4	30	260			5 mm
MR2A16AVMA35R	Everspin Technologies	MEMORY CIRCUIT	INDUSTRIAL	48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS		262144 words	3.3			16	GRID ARRAY, LOW PROFILE, FINE PITCH				.75 mm	105 Cel	256KX16	256K	-40 Cel		BOTTOM	S-PBGA-B48		3.6 V	1.35 mm			8 mm		4194304 bit	3 V			NOT SPECIFIED	NOT SPECIFIED			8 mm
CY8C20140-LDX2I	Cypress Semiconductor	MEMORY CIRCUIT	INDUSTRIAL	16	VQCCN	SQUARE	UNSPECIFIED	YES	1	CMOS	NO LEAD		SYNCHRONOUS		2048 words	3			1	CHIP CARRIER, VERY THIN PROFILE				.5 mm	85 Cel	2KX1	2K	-40 Cel	NICKEL PALLADIUM GOLD	QUAD	S-XQCC-N16	3	5.25 V	.6 mm			3 mm	Not Qualified	2048 bit	2.4 V	SRAM IS ORGANISED AS 512MB	e4	20	260			3 mm
MR2A16ACMA35	Everspin Technologies	MEMORY CIRCUIT	INDUSTRIAL	48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS		262144 words	3.3		3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs		.75 mm	85 Cel	256KX16	256K	-40 Cel		BOTTOM	S-PBGA-B48	3	3.6 V	1.35 mm			8 mm	Not Qualified	4194304 bit	3 V			40	260		.028 Amp	8 mm	35 ns
MR0A08BMA35	Everspin Technologies	MEMORY CIRCUIT	COMMERCIAL	48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS	65 mA	131072 words	3.3		3.3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs		.75 mm	70 Cel	128KX8	128K	0 Cel		BOTTOM	S-PBGA-B48	3	3.6 V	1.35 mm			8 mm	Not Qualified	1048576 bit	3 V						.007 Amp	8 mm	35 ns
DSM2180F3-90T6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	52	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		ASYNCHRONOUS		131072 words	5			8	FLATPACK				.65 mm	85 Cel	128KX8	128K	-40 Cel	NICKEL PALLADIUM GOLD	QUAD	S-PQFP-G52		5.5 V	2.35 mm			10 mm	Not Qualified	1048576 bit	4.5 V		e4					10 mm
DSM2180F3V-15K6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND		ASYNCHRONOUS		131072 words	3.3			8	CHIP CARRIER				1.27 mm	85 Cel	128KX8	128K	-40 Cel	MATTE TIN	QUAD	S-PQCC-J52		3.6 V	4.57 mm			19.1262 mm	Not Qualified	1048576 bit	3 V		e3					19.1262 mm
DSM2180F3V-15T6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	52	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		ASYNCHRONOUS		131072 words	3.3			8	FLATPACK				.65 mm	85 Cel	128KX8	128K	-40 Cel	NICKEL PALLADIUM GOLD	QUAD	S-PQFP-G52		3.6 V	2.35 mm			10 mm	Not Qualified	1048576 bit	3 V		e4					10 mm
DSM2190F4V-15K6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND		ASYNCHRONOUS		262144 words	3.3			8	CHIP CARRIER				1.27 mm	85 Cel	256KX8	256K	-40 Cel	MATTE TIN	QUAD	S-PQCC-J52		3.6 V	4.57 mm			19.1262 mm	Not Qualified	2097152 bit	3 V	ALSO CONTAINS 32K X 8 SECONDARY FLASH MEMORY	e3					19.1262 mm
DSM2190F4V-15T6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	52	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		ASYNCHRONOUS		262144 words	3.3			8	FLATPACK				.65 mm	85 Cel	256KX8	256K	-40 Cel	NICKEL PALLADIUM GOLD	QUAD	S-PQFP-G52		3.6 V	2.35 mm			10 mm	Not Qualified	2097152 bit	3 V	ALSO CONTAINS 32K X 8 SECONDARY FLASH MEMORY	e4					10 mm
DSM2150F5V-12T6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	80	TFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		ASYNCHRONOUS		262144 words	3.3			16	FLATPACK, THIN PROFILE, FINE PITCH				.5 mm	85 Cel	256KX16	256K	-40 Cel	TIN/NICKEL PALLADIUM GOLD	QUAD	S-PQFP-G80		3.6 V	1.2 mm			12 mm	Not Qualified	4194304 bit	3 V	ALSO CONTAINS 32K BYTE OF SECONDARY FLASH MEMORY	e3/e4	NOT SPECIFIED	NOT SPECIFIED			12 mm
XCCACEM16BG388I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	388	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	240 mA	1048576 words	1.8		1.8,3.3	16	GRID ARRAY	BGA388,26X26,50	Flash Memories	20	1.27 mm	85 Cel	1MX16	1M	-40 Cel		BOTTOM	S-PBGA-B388	1	1.89 V	2.87 mm	1000000 Write/Erase Cycles		35 mm	Not Qualified	16777216 bit	1.71 V					NOR TYPE		35 mm
XCCACEM32BG388I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	388	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	240 mA	2097152 words	1.8		1.8,3.3	16	GRID ARRAY	BGA388,26X26,50	Flash Memories	20	1.27 mm	85 Cel	2MX16	2M	-40 Cel	TIN LEAD	BOTTOM	S-PBGA-B388	1	1.89 V	2.87 mm	1000000 Write/Erase Cycles		35 mm	Not Qualified	33554432 bit	1.71 V		e0			NOR TYPE		35 mm
XCCACEM64BG388I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	388	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	240 mA	4194304 words	1.8		1.8,3.3	16	GRID ARRAY	BGA388,26X26,50	Flash Memories		1.27 mm	85 Cel	4MX16	4M	-40 Cel	TIN LEAD	BOTTOM	S-PBGA-B388		1.89 V	2.87 mm	1000000 Write/Erase Cycles	133 MHz	35 mm	Not Qualified	67108864 bit	1.71 V		e0			NOR TYPE		35 mm
MT29C4G48MAZAPAKQ-5IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	168	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL		SYNCHRONOUS		131072 words	1.8	FLASH+SDRAM		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel	128KX16	128K	-40 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B168		1.95 V	.75 mm			12 mm	Not Qualified	2097152 bit	1.7 V		e1					12 mm
MT29C2G48MAKLCJI-6IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	168	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS		131072 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA168,23X23,20	Other Memory ICs		.5 mm	85 Cel	128KX16	128K	-40 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B168		1.95 V	1.1 mm			12 mm	Not Qualified	2097152 bit	1.7 V		e1					12 mm
MT29C4G96MAZBBCJV-48IT	Micron Technology	MEMORY CIRCUIT		168	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL		SYNCHRONOUS		268435456 words	1.8	FLASH+LPDDR		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA168,23X23,20			.5 mm	85 Cel	256MX16	256M	-40 Cel		BOTTOM	S-PBGA-B168		1.95 V	1 mm			12 mm		4294967296 bit	1.7 V	IT IS ALSO HAVING 4GBIT (X 32) LPDDR						12 mm
MT29C4G48MAZBBAKB-48IT	Micron Technology	MEMORY CIRCUIT		168	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL		SYNCHRONOUS		268435456 words	1.8	FLASH+LPDDR		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA168,23X23,20			.5 mm	85 Cel	256MX16	256M	-40 Cel		BOTTOM	S-PBGA-B168		1.95 V	.8 mm			12 mm		4294967296 bit	1.7 V	IT IS ALSO HAVING 2GBIT (X 32) LPDDR		NOT SPECIFIED	NOT SPECIFIED			12 mm
MT29C8G96MAZBBDJV-48IT	Micron Technology	MEMORY CIRCUIT		168	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL		SYNCHRONOUS		536870912 words	1.8	FLASH+LPDDR		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA168,23X23,20			.5 mm	85 Cel	512MX16	512M	-40 Cel		BOTTOM	S-PBGA-B168		1.95 V	1 mm			12 mm		8589934592 bit	1.7 V	IT IS ALSO HAVING 4GBIT (X 32) LPDDR		NOT SPECIFIED	NOT SPECIFIED			12 mm
M39L0R8090U3ZE6E	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL		SYNCHRONOUS		33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel	32MX16	32M	-40 Cel		BOTTOM	S-PBGA-B133		1.95 V	1 mm			8 mm		536870912 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED			8 mm
MT43A4G40200NFA-S15:A	Micron Technology	MEMORY CIRCUIT	OTHER	896	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL		SYNCHRONOUS		4294967296 words	1.2			4	GRID ARRAY				1 mm	105 Cel	4GX4	4G	0 Cel		BOTTOM	S-PBGA-B896		1.26 V	4.2 mm			31 mm		17179869184 bit	1.14 V	IT ALSO OPERATES AT LOGIC OPERATING TEMPERATURE 0 TO 110 DEG CENTIGRADE		NOT SPECIFIED	NOT SPECIFIED			31 mm
MT29C4G96MAZBACJG-5WT	Micron Technology	MEMORY CIRCUIT	OTHER	168	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL		SYNCHRONOUS		268435456 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA168,23X23,20	Other Memory ICs		.5 mm	85 Cel	256MX16	256M	-25 Cel		BOTTOM	S-PBGA-B168		1.95 V	.9 mm			12 mm	Not Qualified	4294967296 bit	1.7 V	MOBILE LPDDR DEVICE ALSO AVAILABLE		NOT SPECIFIED	NOT SPECIFIED			12 mm	25 ns
MT29C4G48MAZBAAKQ-5WT	Micron Technology	MEMORY CIRCUIT	OTHER	168	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL		SYNCHRONOUS		268435456 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel	256MX16	256M	-25 Cel		BOTTOM	S-PBGA-B168		1.95 V	.75 mm			12 mm		4294967296 bit	1.7 V	MOBILE LPDDR DEVICE ALSO AVAILABLE		NOT SPECIFIED	NOT SPECIFIED			12 mm
MT29C4G96MAZBACJG-5IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	168	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL		SYNCHRONOUS		268435456 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel	256MX16	256M	-40 Cel		BOTTOM	S-PBGA-B168		1.95 V	.9 mm			12 mm		4294967296 bit	1.7 V	MOBILE LPDDR DEVICE ALSO AVAILABLE		NOT SPECIFIED	NOT SPECIFIED			12 mm
MT29C8G96MAZBADJV-5IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	168	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL		SYNCHRONOUS		536870912 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel	512MX16	512M	-40 Cel		BOTTOM	S-PBGA-B168		1.95 V	1 mm			12 mm		8589934592 bit	1.7 V	MOBILE LPDDR DEVICE ALSO AVAILABLE		NOT SPECIFIED	NOT SPECIFIED			12 mm

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.