AUTOMOTIVE Other Function Memory ICs 13

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
CC2544RHBT	Texas Instruments	MEMORY CIRCUIT	AUTOMOTIVE		HVQCCN	SQUARE	PLASTIC/EPOXY	YES				NO LEAD								CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE	LCC32,.2SQ,20		.5 mm	125 Cel			-40 Cel	NICKEL PALLADIUM GOLD SILVER	QUAD		S-PQCC-N32	3	3.6 V	1 mm	2496 MHz	5 mm			2 V	e4	30	260		5 mm
MR2A16AMYS35R	Everspin Technologies	MEMORY CIRCUIT	AUTOMOTIVE	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	ASYNCHRONOUS		262144 words	3.3			16	SMALL OUTLINE, THIN PROFILE			.8 mm	125 Cel	256KX16	256K	-40 Cel		DUAL		R-PDSO-G44		3.6 V	1.2 mm		10.16 mm		4194304 bit	3 V		NOT SPECIFIED	NOT SPECIFIED		18.41 mm
MR2A16AMYS35	Everspin Technologies	MEMORY CIRCUIT	AUTOMOTIVE	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	ASYNCHRONOUS		262144 words	3.3			16	SMALL OUTLINE, THIN PROFILE			.8 mm	125 Cel	256KX16	256K	-40 Cel		DUAL		R-PDSO-G44		3.6 V	1.2 mm		10.16 mm		4194304 bit	3 V		NOT SPECIFIED	NOT SPECIFIED		18.41 mm
MR25H256MDC	Everspin Technologies	MEMORY CIRCUIT	AUTOMOTIVE	8	HSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SYNCHRONOUS		32768 words	3.3		3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG	SOLCC8,.25	SRAMs	1.27 mm	125 Cel	32KX8	32K	-40 Cel		DUAL		R-PDSO-N8		3.6 V	1.05 mm		5 mm	Not Qualified	262144 bit	3 V		NOT SPECIFIED	NOT SPECIFIED	.00001 Amp	6 mm
MR2A08AMYS35R	Everspin Technologies	MEMORY CIRCUIT	AUTOMOTIVE	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	ASYNCHRONOUS	135 mA	262144 words	3.3		3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	125 Cel	256KX8	256K	-40 Cel		DUAL		R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	2097152 bit	3 V		NOT SPECIFIED	NOT SPECIFIED	.02 Amp	18.41 mm	35 ns
MR2A08AMYS35	Everspin Technologies	MEMORY CIRCUIT	AUTOMOTIVE	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	ASYNCHRONOUS	135 mA	262144 words	3.3		3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	125 Cel	256KX8	256K	-40 Cel		DUAL		R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	2097152 bit	3 V		NOT SPECIFIED	NOT SPECIFIED	.02 Amp	18.41 mm	35 ns
47C04-E/SN	Microchip Technology	MEMORY CIRCUIT	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		512 words	5	EEPROM+SRAM		8	SMALL OUTLINE	SOP8,.23		1.27 mm	125 Cel	512X8	512	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	3	5.5 V	1.75 mm		3.9 mm		4096 bit	4.5 V	e3	40	260		4.9 mm	400 ns
47C04-E/ST	Microchip Technology	MEMORY CIRCUIT	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		512 words	5	EEPROM+SRAM		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		.65 mm	125 Cel	512X8	512	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	5.5 V	1.2 mm		3 mm		4096 bit	4.5 V	e3	40	260		4.4 mm	400 ns
47C04T-E/SN	Microchip Technology	MEMORY CIRCUIT	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		512 words	5	EEPROM+SRAM		8	SMALL OUTLINE	SOP8,.23		1.27 mm	125 Cel	512X8	512	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	3	5.5 V	1.75 mm		3.9 mm		4096 bit	4.5 V	e3	40	260		4.9 mm	400 ns
47C04T-E/ST	Microchip Technology	MEMORY CIRCUIT	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		512 words	5	EEPROM+SRAM		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		.65 mm	125 Cel	512X8	512	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	5.5 V	1.2 mm		3 mm		4096 bit	4.5 V	e3	40	260		4.4 mm	400 ns
47L16-E/P	Microchip Technology	MEMORY CIRCUIT	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SYNCHRONOUS		2048 words		EEPROM+SRAM		8	IN-LINE	DIP8,.3		2.54 mm	125 Cel	2KX8	2K	-40 Cel	MATTE TIN	DUAL	1	R-PDIP-T8		3.6 V	5.334 mm		7.62 mm		16384 bit	2.7 V	e3				9.271 mm	400 ns
47L16T-E/SN	Microchip Technology	MEMORY CIRCUIT	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		2048 words		EEPROM+SRAM		8	SMALL OUTLINE	SOP8,.23		1.27 mm	125 Cel	2KX8	2K	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	3	3.6 V	1.75 mm		3.9 mm		16384 bit	2.7 V	e3	40	260		4.9 mm	400 ns
47L16T-E/ST	Microchip Technology	MEMORY CIRCUIT	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		2048 words		EEPROM+SRAM		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		.65 mm	125 Cel	2KX8	2K	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	3.6 V	1.2 mm		3 mm		16384 bit	2.7 V	e3	40	260		4.4 mm	400 ns

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.