COMMERCIAL Other Function Memory ICs 57

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
MT9VDDT6472HY-40BF2	Micron Technology		COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		4050 mA	67108864 words	COMMON	2.6	2.6	72	MICROELECTRONIC ASSEMBLY	DIMM200,24	Other Memory ICs	.6 mm	70 Cel	3-STATE	64MX72	64M		DUAL	R-PDMA-N200				200 MHz		Not Qualified	4831838208 bit						.045 Amp		.7 ns
MT9HTF3272Y-40EB2	Micron Technology		COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		2070 mA	33554432 words	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	70 Cel	3-STATE	32MX72	32M		DUAL	R-PDMA-N240				200 MHz		Not Qualified	2415919104 bit						.045 Amp		.6 ns
MT9VDDF3272Y-40BK1	Micron Technology		COMMERCIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		4050 mA	33554432 words	COMMON	2.6	2.6	72	MICROELECTRONIC ASSEMBLY	DIMM184	Other Memory ICs	1.27 mm	70 Cel	3-STATE	32MX72	32M		DUAL	R-PDMA-N184				200 MHz		Not Qualified	2415919104 bit						.036 Amp		.7 ns
MT18VDDF12872DG-335J1	Micron Technology		COMMERCIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		5220 mA	134217728 words	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	Other Memory ICs	1.27 mm	70 Cel	3-STATE	128MX72	128M		DUAL	R-PDMA-N184				166 MHz		Not Qualified	9663676416 bit						.09 Amp		.7 ns
MT18HTF25672PKZ-667H1	Micron Technology		COMMERCIAL	244	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		3870 mA	268435456 words	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM244,24	Other Memory ICs	.6 mm	70 Cel	3-STATE	256MX72	256M		DUAL	R-PDMA-N244				333 MHz		Not Qualified	19327352832 bit								.45 ns
MT9HVF6472PKZ-667G1	Micron Technology		COMMERCIAL	244	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		2160 mA	67108864 words	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM244,24	Other Memory ICs	.6 mm	70 Cel	3-STATE	64MX72	64M		DUAL	R-PDMA-N244				333 MHz		Not Qualified	4831838208 bit						.063 Amp		.45 ns
MR256D08BMA45	Everspin Technologies	MEMORY CIRCUIT	COMMERCIAL	48	LFBGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	65 mA	32768 words		3.3	3.3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	70 Cel		32KX8	32K		BOTTOM	S-PBGA-B48		3.6 V	1.35 mm		8 mm	Not Qualified	262144 bit	3 V			40	260	.008 Amp	8 mm	45 ns
MR256A08BMA35R	Everspin Technologies	MEMORY CIRCUIT	COMMERCIAL	48	LFBGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	65 mA	32768 words		3.3	3.3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel		32KX8	32K		BOTTOM	S-PBGA-B48		3.6 V	1.35 mm		8 mm	Not Qualified	262144 bit	3 V			NOT SPECIFIED	NOT SPECIFIED	.007 Amp	8 mm	35 ns
MR256A08BMA35	Everspin Technologies	MEMORY CIRCUIT	COMMERCIAL	48	LFBGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	65 mA	32768 words		3.3	3.3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel		32KX8	32K		BOTTOM	S-PBGA-B48		3.6 V	1.35 mm		8 mm	Not Qualified	262144 bit	3 V			NOT SPECIFIED	NOT SPECIFIED	.007 Amp	8 mm	35 ns
MR256A08BSO35R	Everspin Technologies	MEMORY CIRCUIT	COMMERCIAL	32	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	ASYNCHRONOUS	65 mA	32768 words		3.3	3.3	8	SMALL OUTLINE	SOP32,.4	SRAMs	1.25 mm	70 Cel		32KX8	32K		DUAL	R-PDSO-G32		3.6 V	2.54 mm		7.505 mm	Not Qualified	262144 bit	3 V			NOT SPECIFIED	NOT SPECIFIED	.007 Amp	20.726 mm	35 ns
MR256A08BSO35	Everspin Technologies	MEMORY CIRCUIT	COMMERCIAL	32	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	ASYNCHRONOUS	65 mA	32768 words		3.3	3.3	8	SMALL OUTLINE	SOP32,.4	SRAMs	1.25 mm	70 Cel		32KX8	32K		DUAL	R-PDSO-G32		3.6 V	2.54 mm		7.505 mm	Not Qualified	262144 bit	3 V			NOT SPECIFIED	NOT SPECIFIED	.007 Amp	20.726 mm	35 ns
MR256A08BYS35R	Everspin Technologies	MEMORY CIRCUIT	COMMERCIAL	44	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	ASYNCHRONOUS	65 mA	32768 words		3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	70 Cel		32KX8	32K		DUAL	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	262144 bit	3 V			NOT SPECIFIED	NOT SPECIFIED	.007 Amp	18.41 mm	35 ns
MR256A08BYS35	Everspin Technologies	MEMORY CIRCUIT	COMMERCIAL	44	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	ASYNCHRONOUS	65 mA	32768 words		3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	70 Cel		32KX8	32K		DUAL	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	262144 bit	3 V			NOT SPECIFIED	NOT SPECIFIED	.007 Amp	18.41 mm	35 ns
MR0A16AMA35R	Everspin Technologies	MEMORY CIRCUIT	COMMERCIAL	48	LFBGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	155 mA	65536 words		3.3	3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel		64KX16	64K		BOTTOM	S-PBGA-B48		3.6 V	1.35 mm		8 mm	Not Qualified	1048576 bit	3 V			NOT SPECIFIED	NOT SPECIFIED	.012 Amp	8 mm	35 ns
NP5Q128A13ESFC0E	Micron Technology	MEMORY CIRCUIT	COMMERCIAL	16	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS	50 mA	134217728 words		3	3/3.3	1	SMALL OUTLINE	SOP16,.4	SRAMs	1.27 mm	70 Cel		128MX1	128M		DUAL	R-PDSO-G16		3.6 V	2.65 mm		7.5 mm	Not Qualified	134217728 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	.0002 Amp	10.3 mm
NP8P128A13B1760E	Micron Technology	MEMORY CIRCUIT	COMMERCIAL	64	TBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		3		8	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		16MX8	16M		BOTTOM	R-PBGA-B64		3.6 V	1.2 mm		8 mm		134217728 bit	2.7 V						10 mm
NP8P128A13BSM60E	Micron Technology	MEMORY CIRCUIT	COMMERCIAL	56	TSOP1		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS		16777216 words		3		8	SMALL OUTLINE, THIN PROFILE			.5 mm	70 Cel		16MX8	16M		DUAL	R-PDSO-G56		3.6 V	1.2 mm		14 mm		134217728 bit	2.7 V						18.4 mm
NP8P128A13T1760E	Micron Technology	MEMORY CIRCUIT	COMMERCIAL	64	TBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		3		8	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		16MX8	16M		BOTTOM	R-PBGA-B64		3.6 V	1.2 mm		8 mm		134217728 bit	2.7 V						10 mm
NP8P128A13TSM60E	Micron Technology	MEMORY CIRCUIT	COMMERCIAL	56	TSOP1		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS		16777216 words		3		8	SMALL OUTLINE, THIN PROFILE			.5 mm	70 Cel		16MX8	16M		DUAL	R-PDSO-G56		3.6 V	1.2 mm		14 mm		134217728 bit	2.7 V						18.4 mm
MR10Q010SCR	Everspin Technologies	MEMORY CIRCUIT	COMMERCIAL	16	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS	220 mA	131072 words		3.3	1.8,3.3	8	SMALL OUTLINE	SOP16,.4	SRAMs	1.27 mm	70 Cel		128KX8	128K		DUAL	R-PDSO-G16		3.6 V	2.64 mm		7.52 mm	Not Qualified	1048576 bit	3 V			NOT SPECIFIED	NOT SPECIFIED	.005 Amp	10.34 mm
TMS4C1050-60DJ	Texas Instruments	MEMORY CIRCUIT	COMMERCIAL	20	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND		35 mA			5	5		SMALL OUTLINE	SOJ20/26,.34	Other Memory ICs	1.27 mm	70 Cel					DUAL	R-PDSO-J20						Not Qualified					NOT SPECIFIED	NOT SPECIFIED	.01 Amp		60 ns
XC17S05PD8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SYNCHRONOUS	10 mA	53984 words	COMMON	5	5	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	70 Cel	3-STATE	53984X1	53984	TIN LEAD	DUAL	R-PDIP-T8	1	5.25 V	4.5974 mm	10 MHz	7.62 mm	Not Qualified	53984 bit	4.75 V		e0	30	225	.00005 Amp	9.3599 mm
XC17S05XLPD8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SYNCHRONOUS	5 mA	54544 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	70 Cel	3-STATE	54544X1	54544	TIN LEAD	DUAL	R-PDIP-T8	1	3.6 V	4.5974 mm	10 MHz	7.62 mm	Not Qualified	54544 bit	3 V		e0	30	225	.00005 Amp	9.3599 mm
XC17S10PD8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SYNCHRONOUS	10 mA	95008 words	COMMON	5	5	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	70 Cel	3-STATE	95008X1	95008	TIN LEAD	DUAL	R-PDIP-T8	1	5.25 V	4.5974 mm	10 MHz	7.62 mm	Not Qualified	95008 bit	4.75 V		e0	30	225	.00005 Amp	9.3599 mm
XC17S10XLPD8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SYNCHRONOUS	5 mA	95752 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	70 Cel	3-STATE	95752X1	95752	TIN LEAD	DUAL	R-PDIP-T8	1	3.6 V	4.5974 mm	10 MHz	7.62 mm	Not Qualified	95752 bit	3 V		e0	30	225	.00005 Amp	9.3599 mm
XC17S20PD8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SYNCHRONOUS	10 mA	178144 words	COMMON	5	5	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	70 Cel	3-STATE	178144X1	178144	Tin/Lead (Sn85Pb15)	DUAL	R-PDIP-T8	1	5.25 V	4.5974 mm	10 MHz	7.62 mm	Not Qualified	178144 bit	4.75 V		e0	30	225	.00005 Amp	9.3599 mm
XC17S20XLPD8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SYNCHRONOUS	5 mA	179160 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	70 Cel	3-STATE	179160X1	179160	Tin/Lead (Sn85Pb15)	DUAL	R-PDIP-T8	1	3.6 V	4.5974 mm	10 MHz	7.62 mm	Not Qualified	179160 bit	3 V		e0	30	225	.00005 Amp	9.3599 mm
XC17S30PD8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SYNCHRONOUS	10 mA	247968 words	COMMON	5	5	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	70 Cel	3-STATE	247968X1	247968	TIN LEAD	DUAL	R-PDIP-T8	1	5.25 V	4.5974 mm	10 MHz	7.62 mm	Not Qualified	247968 bit	4.75 V		e0	30	225	.00005 Amp	9.3599 mm
XC17S30XLPD8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SYNCHRONOUS	5 mA	249168 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	70 Cel	3-STATE	249168X1	249168	TIN LEAD	DUAL	R-PDIP-T8	1	3.6 V	4.5974 mm	10 MHz	7.62 mm	Not Qualified	249168 bit	3 V		e0	30	225	.00005 Amp	9.3599 mm
XC17S40PD8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SYNCHRONOUS	10 mA	329312 words	COMMON	5	5	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	70 Cel	3-STATE	329312X1	329312	TIN LEAD	DUAL	R-PDIP-T8	1	5.25 V	4.5974 mm	10 MHz	7.62 mm	Not Qualified	329312 bit	4.75 V		e0	30	225	.00005 Amp	9.3599 mm
XC17S40XLPD8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SYNCHRONOUS	5 mA	330696 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	70 Cel	3-STATE	330696X1	330696	TIN LEAD	DUAL	R-PDIP-T8	1	3.6 V	4.5974 mm	10 MHz	7.62 mm	Not Qualified	330696 bit	3 V		e0	30	225	.00005 Amp	9.3599 mm
XC17S40SO20C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	20	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS	10 mA	329312 words	COMMON	5	5	1	SMALL OUTLINE	SOP20,.4	OTP ROMs	1.27 mm	70 Cel	3-STATE	329312X1	329312	TIN LEAD	DUAL	R-PDSO-G20	3	5.25 V	2.65 mm	10 MHz	7.5 mm	Not Qualified	329312 bit	4.75 V		e0	30	225	.00005 Amp	12.8 mm
XC17S40XLSO20C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	20	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS	5 mA	330696 words	COMMON	3.3	3.3	1	SMALL OUTLINE	SOP20,.4	OTP ROMs	1.27 mm	70 Cel	3-STATE	330696X1	330696	TIN LEAD	DUAL	R-PDSO-G20	3	3.6 V	2.65 mm	10 MHz	7.5 mm	Not Qualified	330696 bit	3 V		e0	30	225	.00005 Amp	12.8 mm
XC17S05VO8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS	10 mA	53984 words	COMMON	5	5	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs	1.27 mm	70 Cel	3-STATE	53984X1	53984	TIN LEAD	DUAL	R-PDSO-G8	3	5.25 V	1.2 mm	10 MHz	3.9 mm	Not Qualified	53984 bit	4.75 V		e0	30	225	.00005 Amp	4.9 mm
XC17S05XLVO8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS	5 mA	54544 words	COMMON	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs	1.27 mm	70 Cel	3-STATE	54544X1	54544	TIN LEAD	DUAL	R-PDSO-G8	3	3.6 V	1.2 mm	10 MHz	3.9 mm	Not Qualified	54544 bit	3 V		e0	30	225	.00005 Amp	4.9 mm
XC17S10VO8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS	10 mA	95008 words	COMMON	5	5	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs	1.27 mm	70 Cel	3-STATE	95008X1	95008	TIN LEAD	DUAL	R-PDSO-G8	3	5.25 V	1.2 mm	10 MHz	3.9 mm	Not Qualified	95008 bit	4.75 V		e0	30	225	.00005 Amp	4.9 mm
XC17S10XLVO8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS	5 mA	95752 words	COMMON	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs	1.27 mm	70 Cel	3-STATE	95752X1	95752	Tin/Lead (Sn85Pb15)	DUAL	R-PDSO-G8	3	3.6 V	1.2 mm	10 MHz	3.9 mm	Not Qualified	95752 bit	3 V		e0	30	225	.00005 Amp	4.9 mm
XC17S20VO8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS	10 mA	178144 words	COMMON	5	5	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs	1.27 mm	70 Cel	3-STATE	178144X1	178144	Tin/Lead (Sn85Pb15)	DUAL	R-PDSO-G8	3	5.25 V	1.2 mm	10 MHz	3.9 mm	Not Qualified	178144 bit	4.75 V		e0	30	225	.00005 Amp	4.9 mm
XC17S20XLVO8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS	5 mA	179160 words	COMMON	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs	1.27 mm	70 Cel	3-STATE	179160X1	179160	Tin/Lead (Sn85Pb15)	DUAL	R-PDSO-G8	3	3.6 V	1.2 mm	10 MHz	3.9 mm	Not Qualified	179160 bit	3 V		e0	30	225	.00005 Amp	4.9 mm
XC17S30VO8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS	10 mA	247968 words	COMMON	5	5	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs	1.27 mm	70 Cel	3-STATE	247968X1	247968	Tin/Lead (Sn85Pb15)	DUAL	R-PDSO-G8	3	5.25 V	1.2 mm	10 MHz	3.9 mm	Not Qualified	247968 bit	4.75 V		e0	30	225	.00005 Amp	4.9 mm
XC17S30XLVO8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS	5 mA	249168 words	COMMON	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs	1.27 mm	70 Cel	3-STATE	249168X1	249168	Tin/Lead (Sn85Pb15)	DUAL	R-PDSO-G8	3	3.6 V	1.2 mm	10 MHz	3.9 mm	Not Qualified	249168 bit	3 V		e0	30	225	.00005 Amp	4.9 mm
SN74LS600ADW	Texas Instruments	MEMORY CIRCUIT	COMMERCIAL	20	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	TTL	GULL WING	ASYNCHRONOUS		16384 words		5		1	SMALL OUTLINE			1.27 mm	70 Cel		16KX1	16K		DUAL	R-PDSO-G20		5.25 V	2.65 mm		7.5 mm	Not Qualified	16384 bit	4.75 V	DRAM IS CONFIGURED AS 4 K X 1		NOT SPECIFIED	NOT SPECIFIED		12.8 mm
XC17S150XLPD8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SYNCHRONOUS	5 mA	1040128 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	70 Cel	3-STATE	1040128X1	1040128	TIN LEAD	DUAL	R-PDIP-T8	1	3.6 V	4.5974 mm	10 MHz	7.62 mm	Not Qualified	1040128 bit	3 V		e0	30	225	.00005 Amp	9.3599 mm
XC17S150XLSO20C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	20	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS	5 mA	1040128 words	COMMON	3.3	3.3	1	SMALL OUTLINE	SOP20,.4	OTP ROMs	1.27 mm	70 Cel	3-STATE	1040128X1	1040128	TIN LEAD	DUAL	R-PDSO-G20	3	3.6 V	2.65 mm	10 MHz	7.5 mm	Not Qualified	1040128 bit	3 V		e0	30	225	.00005 Amp	12.8 mm
MT9VDDT3272AG-335G4	Micron Technology		COMMERCIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		3690 mA	33554432 words	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	Other Memory ICs	1.27 mm	70 Cel	3-STATE	32MX72	32M		DUAL	R-PDMA-N184				167 MHz		Not Qualified	2415919104 bit						.036 Amp		.7 ns
MT9VDDT3272AG-265G4	Micron Technology		COMMERCIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		3285 mA	33554432 words	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	Other Memory ICs	1.27 mm	70 Cel	3-STATE	32MX72	32M		DUAL	R-PDMA-N184				133 MHz		Not Qualified	2415919104 bit						.036 Amp		.75 ns
MT9VDDT6472AG-335F1	Micron Technology		COMMERCIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		3645 mA	67108864 words	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	Other Memory ICs	1.27 mm	70 Cel	3-STATE	64MX72	64M		DUAL	R-PDMA-N184				167 MHz		Not Qualified	4831838208 bit						.045 Amp		.7 ns
MR0A08BMA35	Everspin Technologies	MEMORY CIRCUIT	COMMERCIAL	48	LFBGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	65 mA	131072 words		3.3	3.3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel		128KX8	128K		BOTTOM	S-PBGA-B48	3	3.6 V	1.35 mm		8 mm	Not Qualified	1048576 bit	3 V					.007 Amp	8 mm	35 ns

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.