OTHER Other Function Memory ICs 26

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Length	Maximum Access Time
MT72HTS1G72FZ-667H1D6	Micron Technology		OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		1073741824 words	COMMON			1.5,1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	95 Cel	3-STATE	1GX72	1G	0 Cel	DUAL	R-PDMA-N240			333 MHz		Not Qualified	77309411328 bit						.45 ns
MTFC2GMTEA-WT	Micron Technology		OTHER	153	FBGA		SQUARE	PLASTIC/EPOXY	YES			BALL						1.8/3.3,3/3.3		GRID ARRAY, FINE PITCH	BGA153,14X14,20	Other Memory ICs	.5 mm	85 Cel				-25 Cel	BOTTOM	S-PBGA-B153					Not Qualified	17179869184 bit
MTFC4GMTEA-WT	Micron Technology		OTHER	153	FBGA		SQUARE	PLASTIC/EPOXY	YES			BALL						1.8/3.3,3/3.3		GRID ARRAY, FINE PITCH	BGA153,14X14,20	Other Memory ICs	.5 mm	85 Cel				-25 Cel	BOTTOM	S-PBGA-B153					Not Qualified	34359738368 bit
MTFC16GLTDV-WT	Micron Technology		OTHER	169	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES			BALL						1.8/3.3,3/3.3		GRID ARRAY, FINE PITCH	BGA169,14X28,20	Other Memory ICs	.5 mm	85 Cel				-25 Cel	BOTTOM	R-PBGA-B169					Not Qualified	137438953472 bit
LRI64-W4/1GE	STMicroelectronics	MEMORY CIRCUIT	OTHER		DIE		UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	ASYNCHRONOUS	64 words					1	UNCASED CHIP				85 Cel		64X1	64	-20 Cel	UPPER	X-XUUC-N	3 V					64 bit	1.5 V
SRIX4K-SBN18/1GE	STMicroelectronics	MEMORY CIRCUIT	OTHER		DIE		UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	ASYNCHRONOUS	128 words		3			32	UNCASED CHIP				85 Cel		128X32	128	-25 Cel	UPPER	X-XUUC-N	3.5 V				Not Qualified	4096 bit	2.5 V
THGBMGG9U4LBAIR	Toshiba	MEMORY CIRCUIT	OTHER	153	BGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		68719476736 words					8	GRID ARRAY				85 Cel		64GX8	64G	-25 Cel	BOTTOM	R-PBGA-B153						549755813888 bit
THGBMGT0U8LBAIG	Toshiba	MEMORY CIRCUIT	OTHER	153	BGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		137438953472 words					8	GRID ARRAY				85 Cel		128GX8	128G	-25 Cel	BOTTOM	R-PBGA-B153						1099511627776 bit
THGBMHG6C1LBAIL	Toshiba	MEMORY CIRCUIT	OTHER	153	BGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		8589934592 words					8	GRID ARRAY				85 Cel		8GX8	8G	-25 Cel	BOTTOM	R-PBGA-B153						68719476736 bit
THGBMHG7C1LBAIL	Toshiba	MEMORY CIRCUIT	OTHER	153	BGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		17179869184 words					8	GRID ARRAY				85 Cel		16GX8	16G	-25 Cel	BOTTOM	R-PBGA-B153						137438953472 bit
THGBMHG8C2LBAIL	Toshiba	MEMORY CIRCUIT	OTHER	153	BGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		34359738368 words					8	GRID ARRAY				85 Cel		32GX8	32G	-25 Cel	BOTTOM	R-PBGA-B153						274877906944 bit
THGBMHG9C4LBAIR	Toshiba	MEMORY CIRCUIT	OTHER	153	BGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		68719476736 words					8	GRID ARRAY				85 Cel		64GX8	64G	-25 Cel	BOTTOM	R-PBGA-B153						549755813888 bit
THGBMHT0C8LBAIG	Toshiba	MEMORY CIRCUIT	OTHER	153	BGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		137438953472 words					8	GRID ARRAY				85 Cel		128GX8	128G	-25 Cel	BOTTOM	R-PBGA-B153						1099511627776 bit
MT43A4G40200NFA-S15:A	Micron Technology	MEMORY CIRCUIT	OTHER	896	BGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	4294967296 words		1.2			4	GRID ARRAY			1 mm	105 Cel		4GX4	4G	0 Cel	BOTTOM	S-PBGA-B896	1.26 V	4.2 mm		31 mm		17179869184 bit	1.14 V	IT ALSO OPERATES AT LOGIC OPERATING TEMPERATURE 0 TO 110 DEG CENTIGRADE	NOT SPECIFIED	NOT SPECIFIED	31 mm
MT29C4G48MAZBAAKS-5WT	Micron Technology	MEMORY CIRCUIT	OTHER	137	VFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	67108864 words		1.8			32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel		64MX32	64M	-25 Cel	BOTTOM	R-PBGA-B137	1.95 V	1 mm		10.5 mm		2147483648 bit	1.7 V	ALSO ORGANISED AS 128M X 16	NOT SPECIFIED	NOT SPECIFIED	13 mm
MT29C4G96MAYBACKD-5WT	Micron Technology	MEMORY CIRCUIT	OTHER	137	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	67108864 words		1.8			32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		64MX32	64M	-25 Cel	BOTTOM	R-PBGA-B137	1.95 V	1.1 mm		10.5 mm		2147483648 bit	1.7 V	ALSO ORGANISED AS 128M X 16	NOT SPECIFIED	NOT SPECIFIED	13 mm
MT29C4G96MAZBACKD-5WT	Micron Technology	MEMORY CIRCUIT	OTHER	137	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	67108864 words		1.8			32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		64MX32	64M	-25 Cel	BOTTOM	R-PBGA-B137	1.95 V	1.1 mm		10.5 mm		2147483648 bit	1.7 V	ALSO ORGANISED AS 128M X 16	NOT SPECIFIED	NOT SPECIFIED	13 mm
MT29C8G96MAZBADKD-5IT	Micron Technology	MEMORY CIRCUIT	OTHER	137	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	67108864 words		1.8			32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		64MX32	64M	-25 Cel	BOTTOM	R-PBGA-B137	1.95 V	1.1 mm		10.5 mm		2147483648 bit	1.7 V	ALSO ORGANISED AS 128M X 16	NOT SPECIFIED	NOT SPECIFIED	13 mm
MT29C8G96MAZBADKD-5WT	Micron Technology	MEMORY CIRCUIT	OTHER	137	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	67108864 words		1.8			32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		64MX32	64M	-25 Cel	BOTTOM	R-PBGA-B137	1.95 V	1.1 mm		10.5 mm		2147483648 bit	1.7 V	ALSO ORGANISED AS 128M X 16	NOT SPECIFIED	NOT SPECIFIED	13 mm
SLE66R01PNBX1SA1	Infineon Technologies	MEMORY CIRCUIT	OTHER	2	DIE		UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	SYNCHRONOUS	38 words					32	UNCASED CHIP				70 Cel		38X32	38	-25 Cel	UPPER	X-XUUC-N2						1216 bit
EMD3D256M08G1-150CBS1R	Everspin Technologies	MEMORY CIRCUIT	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	33554432 words		1.5			8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		32MX8	32M	0 Cel	BOTTOM	R-PBGA-B78	1.575 V	1.2 mm		10 mm		268435456 bit	1.425 V		NOT SPECIFIED	NOT SPECIFIED	13 mm
SLE66R01PNNBX1SA2	Infineon Technologies	MEMORY CIRCUIT	OTHER	2	DIE		UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	SYNCHRONOUS	152 words					8	UNCASED CHIP				70 Cel		152X8	152	-25 Cel	UPPER	X-XUUC-N2						1216 bit			NOT SPECIFIED	NOT SPECIFIED
RP-SMLE04DA1	Panasonic	MEMORY CIRCUIT	OTHER		DIE		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	ASYNCHRONOUS	4294967296 words					8	UNCASED CHIP				85 Cel		4GX8	4G	-25 Cel	UPPER	R-XUUC-N						34359738368 bit			NOT SPECIFIED	NOT SPECIFIED
MT29C4G96MAZBACJG-5WT	Micron Technology	MEMORY CIRCUIT	OTHER	168	VFBGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	268435456 words		1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA168,23X23,20	Other Memory ICs	.5 mm	85 Cel		256MX16	256M	-25 Cel	BOTTOM	S-PBGA-B168	1.95 V	.9 mm		12 mm	Not Qualified	4294967296 bit	1.7 V	MOBILE LPDDR DEVICE ALSO AVAILABLE	NOT SPECIFIED	NOT SPECIFIED	12 mm	25 ns
MT29C4G48MAZBAAKQ-5WT	Micron Technology	MEMORY CIRCUIT	OTHER	168	VFBGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	268435456 words		1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		256MX16	256M	-25 Cel	BOTTOM	S-PBGA-B168	1.95 V	.75 mm		12 mm		4294967296 bit	1.7 V	MOBILE LPDDR DEVICE ALSO AVAILABLE	NOT SPECIFIED	NOT SPECIFIED	12 mm
AF8GUD3-OEM	Atp Electronics	MEMORY CIRCUIT	OTHER		DIE		UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD		8589934592 words					8	UNCASED CHIP				85 Cel		8GX8	8G	-25 Cel	UPPER	X-XUUC-N						68719476736 bit

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.