Micron Technology Other Function Memory ICs 51

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
MT9VDDT6472HY-40BF2	Micron Technology		COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		4050 mA	67108864 words	COMMON	2.6		2.6	72	MICROELECTRONIC ASSEMBLY	DIMM200,24	Other Memory ICs	.6 mm	70 Cel	3-STATE	64MX72	64M	0 Cel		DUAL	R-PDMA-N200			200 MHz		Not Qualified	4831838208 bit						.045 Amp		.7 ns
MT9HTF3272Y-40EB2	Micron Technology		COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		2070 mA	33554432 words	COMMON	1.8		1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	70 Cel	3-STATE	32MX72	32M	0 Cel		DUAL	R-PDMA-N240			200 MHz		Not Qualified	2415919104 bit						.045 Amp		.6 ns
MT9VDDF3272Y-40BK1	Micron Technology		COMMERCIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		4050 mA	33554432 words	COMMON	2.6		2.6	72	MICROELECTRONIC ASSEMBLY	DIMM184	Other Memory ICs	1.27 mm	70 Cel	3-STATE	32MX72	32M	0 Cel		DUAL	R-PDMA-N184			200 MHz		Not Qualified	2415919104 bit						.036 Amp		.7 ns
MT36HTF51272FZ-667H1N8	Micron Technology			240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		4480 mA	536870912 words	COMMON			1.5,1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm		3-STATE	512MX72	512M			DUAL	R-PDMA-N240			333 MHz		Not Qualified	38654705664 bit
MT72HTS1G72FZ-667H1D6	Micron Technology		OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD			1073741824 words	COMMON			1.5,1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	95 Cel	3-STATE	1GX72	1G	0 Cel		DUAL	R-PDMA-N240			333 MHz		Not Qualified	77309411328 bit								.45 ns
MT18VDDF12872DG-335J1	Micron Technology		COMMERCIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		5220 mA	134217728 words	COMMON	2.5		2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	Other Memory ICs	1.27 mm	70 Cel	3-STATE	128MX72	128M	0 Cel		DUAL	R-PDMA-N184			166 MHz		Not Qualified	9663676416 bit						.09 Amp		.7 ns
MT18HTF25672PKZ-667H1	Micron Technology		COMMERCIAL	244	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		3870 mA	268435456 words	COMMON	1.8		1.8	72	MICROELECTRONIC ASSEMBLY	DIMM244,24	Other Memory ICs	.6 mm	70 Cel	3-STATE	256MX72	256M	0 Cel		DUAL	R-PDMA-N244			333 MHz		Not Qualified	19327352832 bit								.45 ns
MT9HVF6472PKZ-667G1	Micron Technology		COMMERCIAL	244	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		2160 mA	67108864 words	COMMON	1.8		1.8	72	MICROELECTRONIC ASSEMBLY	DIMM244,24	Other Memory ICs	.6 mm	70 Cel	3-STATE	64MX72	64M	0 Cel		DUAL	R-PDMA-N244			333 MHz		Not Qualified	4831838208 bit						.063 Amp		.45 ns
MTFC2GMTEA-WT	Micron Technology		OTHER	153	FBGA		SQUARE	PLASTIC/EPOXY	YES			BALL							1.8/3.3,3/3.3		GRID ARRAY, FINE PITCH	BGA153,14X14,20	Other Memory ICs	.5 mm	85 Cel				-25 Cel		BOTTOM	S-PBGA-B153					Not Qualified	17179869184 bit
MTFC4GMTEA-WT	Micron Technology		OTHER	153	FBGA		SQUARE	PLASTIC/EPOXY	YES			BALL							1.8/3.3,3/3.3		GRID ARRAY, FINE PITCH	BGA153,14X14,20	Other Memory ICs	.5 mm	85 Cel				-25 Cel		BOTTOM	S-PBGA-B153					Not Qualified	34359738368 bit
MTFC16GLTDV-WT	Micron Technology		OTHER	169	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES			BALL							1.8/3.3,3/3.3		GRID ARRAY, FINE PITCH	BGA169,14X28,20	Other Memory ICs	.5 mm	85 Cel				-25 Cel		BOTTOM	R-PBGA-B169					Not Qualified	137438953472 bit
NP5Q128A13ESFC0E	Micron Technology	MEMORY CIRCUIT	COMMERCIAL	16	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS	50 mA	134217728 words		3		3/3.3	1	SMALL OUTLINE	SOP16,.4	SRAMs	1.27 mm	70 Cel		128MX1	128M	0 Cel		DUAL	R-PDSO-G16	3.6 V	2.65 mm		7.5 mm	Not Qualified	134217728 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	.0002 Amp	10.3 mm
NP5Q128AE3ESFC0E	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	16	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS	50 mA	16777216 words		3		3/3.3	8	SMALL OUTLINE	SOP16,.4	SRAMs	1.27 mm	85 Cel		16MX8	16M	-40 Cel		DUAL	R-PDSO-G16	3.6 V	2.65 mm		7.5 mm	Not Qualified	134217728 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	.0002 Amp	10.3 mm
NP8P128A13B1760E	Micron Technology	MEMORY CIRCUIT	COMMERCIAL	64	TBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		3			8	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		16MX8	16M	0 Cel		BOTTOM	R-PBGA-B64	3.6 V	1.2 mm		8 mm		134217728 bit	2.7 V						10 mm
NP8P128A13BSM60E	Micron Technology	MEMORY CIRCUIT	COMMERCIAL	56	TSOP1		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS		16777216 words		3			8	SMALL OUTLINE, THIN PROFILE			.5 mm	70 Cel		16MX8	16M	0 Cel		DUAL	R-PDSO-G56	3.6 V	1.2 mm		14 mm		134217728 bit	2.7 V						18.4 mm
NP8P128A13T1760E	Micron Technology	MEMORY CIRCUIT	COMMERCIAL	64	TBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		3			8	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		16MX8	16M	0 Cel		BOTTOM	R-PBGA-B64	3.6 V	1.2 mm		8 mm		134217728 bit	2.7 V						10 mm
NP8P128A13TSM60E	Micron Technology	MEMORY CIRCUIT	COMMERCIAL	56	TSOP1		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS		16777216 words		3			8	SMALL OUTLINE, THIN PROFILE			.5 mm	70 Cel		16MX8	16M	0 Cel		DUAL	R-PDSO-G56	3.6 V	1.2 mm		14 mm		134217728 bit	2.7 V						18.4 mm
NP8P128AE3T1760E	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	64	TBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		3			8	GRID ARRAY, THIN PROFILE			1 mm	85 Cel		16MX8	16M	-40 Cel		BOTTOM	R-PBGA-B64	3.6 V	1.2 mm		8 mm		134217728 bit	2.7 V						10 mm
NP8P128AE3TSM60E	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	56	TSOP1		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS		16777216 words		3			8	SMALL OUTLINE, THIN PROFILE			.5 mm	85 Cel		16MX8	16M	-40 Cel		DUAL	R-PDSO-G56	3.6 V	1.2 mm		14 mm		134217728 bit	2.7 V						18.4 mm
MT9VDDT3272AG-335G4	Micron Technology		COMMERCIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		3690 mA	33554432 words	COMMON	2.5		2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	Other Memory ICs	1.27 mm	70 Cel	3-STATE	32MX72	32M	0 Cel		DUAL	R-PDMA-N184			167 MHz		Not Qualified	2415919104 bit						.036 Amp		.7 ns
MT9VDDT3272AG-265G4	Micron Technology		COMMERCIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		3285 mA	33554432 words	COMMON	2.5		2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	Other Memory ICs	1.27 mm	70 Cel	3-STATE	32MX72	32M	0 Cel		DUAL	R-PDMA-N184			133 MHz		Not Qualified	2415919104 bit						.036 Amp		.75 ns
MT9VDDT6472AG-335F1	Micron Technology		COMMERCIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		3645 mA	67108864 words	COMMON	2.5		2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	Other Memory ICs	1.27 mm	70 Cel	3-STATE	64MX72	64M	0 Cel		DUAL	R-PDMA-N184			167 MHz		Not Qualified	4831838208 bit						.045 Amp		.7 ns
MT29C4G48MAZAPAKQ-5IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	168	VFBGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		131072 words		1.8	FLASH+SDRAM		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		128KX16	128K	-40 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B168	1.95 V	.75 mm		12 mm	Not Qualified	2097152 bit	1.7 V		e1				12 mm
MT29C2G48MAKLCJI-6IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	168	TFBGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		131072 words		1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA168,23X23,20	Other Memory ICs	.5 mm	85 Cel		128KX16	128K	-40 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B168	1.95 V	1.1 mm		12 mm	Not Qualified	2097152 bit	1.7 V		e1				12 mm
MT29C4G96MAZBBCJV-48IT	Micron Technology	MEMORY CIRCUIT		168	VFBGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		1.8	FLASH+LPDDR		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA168,23X23,20		.5 mm	85 Cel		256MX16	256M	-40 Cel		BOTTOM	S-PBGA-B168	1.95 V	1 mm		12 mm		4294967296 bit	1.7 V	IT IS ALSO HAVING 4GBIT (X 32) LPDDR					12 mm
MT29C4G48MAZBBAKB-48IT	Micron Technology	MEMORY CIRCUIT		168	VFBGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		1.8	FLASH+LPDDR		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA168,23X23,20		.5 mm	85 Cel		256MX16	256M	-40 Cel		BOTTOM	S-PBGA-B168	1.95 V	.8 mm		12 mm		4294967296 bit	1.7 V	IT IS ALSO HAVING 2GBIT (X 32) LPDDR		NOT SPECIFIED	NOT SPECIFIED		12 mm
MT29C8G96MAZBBDJV-48IT	Micron Technology	MEMORY CIRCUIT		168	VFBGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words		1.8	FLASH+LPDDR		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA168,23X23,20		.5 mm	85 Cel		512MX16	512M	-40 Cel		BOTTOM	S-PBGA-B168	1.95 V	1 mm		12 mm		8589934592 bit	1.7 V	IT IS ALSO HAVING 4GBIT (X 32) LPDDR		NOT SPECIFIED	NOT SPECIFIED		12 mm
M39L0R8090U3ZE6E	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	133	VFBGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		32MX16	32M	-40 Cel		BOTTOM	S-PBGA-B133	1.95 V	1 mm		8 mm		536870912 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED		8 mm
MT29C4G48MAYBBAHK-48AIT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	137	VFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words		1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel		512MX8	512M	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	R-PBGA-B137	1.95 V	1 mm		10.5 mm		4294967296 bit	1.7 V	IT IS ALSO HAVING 2GBIT (X 32) LPDDR	e1	30	260		13 mm
MT29C1G12MAAIVAMD-5IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	130	VFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.65 mm	85 Cel		128MX8	128M	-40 Cel		BOTTOM	R-PBGA-B130	1.95 V	1 mm		8 mm		1073741824 bit	1.7 V	IT ALSO CONTAINS 512MBIT(32MBIT X 16) MOBILE LPDDR		NOT SPECIFIED	NOT SPECIFIED		9 mm
MT29C1G12MAAIYAMR-5AIT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	130	VFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.65 mm	85 Cel		128MX8	128M	-40 Cel		BOTTOM	R-PBGA-B130	1.95 V	1 mm		8 mm		1073741824 bit	1.7 V	LPDRAM IS ORGANISED AS 32M X 16		NOT SPECIFIED	NOT SPECIFIED		9 mm
MT29C1G12MAAJVAMD-5IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	130	VFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.65 mm	85 Cel		64MX16	64M	-40 Cel		BOTTOM	R-PBGA-B130	1.95 V	1 mm		8 mm		1073741824 bit	1.7 V	IT ALSO CONTAINS 512MBIT(32MBIT X 16) MOBILE LPDDR		NOT SPECIFIED	NOT SPECIFIED		9 mm
MT29C1G12MAAJYAMD-5IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	130	VFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.65 mm	85 Cel		64MX16	64M	-40 Cel		BOTTOM	R-PBGA-B130	1.95 V	1 mm		8 mm		1073741824 bit	1.7 V	LPDRAM IS ORGANISED AS 32M X 16		NOT SPECIFIED	NOT SPECIFIED		9 mm
MT43A4G40200NFA-S15:A	Micron Technology	MEMORY CIRCUIT	OTHER	896	BGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		4294967296 words		1.2			4	GRID ARRAY			1 mm	105 Cel		4GX4	4G	0 Cel		BOTTOM	S-PBGA-B896	1.26 V	4.2 mm		31 mm		17179869184 bit	1.14 V	IT ALSO OPERATES AT LOGIC OPERATING TEMPERATURE 0 TO 110 DEG CENTIGRADE		NOT SPECIFIED	NOT SPECIFIED		31 mm
MT29C2G24MAAAAHAMD-5IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	130	VFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		1.8			32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.65 mm	85 Cel		32MX32	32M	-40 Cel		BOTTOM	R-PBGA-B130	1.95 V	1 mm		8 mm		1073741824 bit	1.7 V	ALSO ORGANISED AS 64M X 16		NOT SPECIFIED	NOT SPECIFIED		9 mm
MT29C2G24MAABAHAMD-5EIT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	130	VFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		1.8			32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.65 mm	85 Cel		32MX32	32M	-40 Cel		BOTTOM	R-PBGA-B130	1.95 V	1 mm		8 mm		1073741824 bit	1.7 V	ALSO ORGANISED AS 64M X 16					9 mm
MT29C2G24MAABAHAMD-5IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	130	VFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		1.8			32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.65 mm	85 Cel		32MX32	32M	-40 Cel		BOTTOM	R-PBGA-B130	1.95 V	1 mm		8 mm		1073741824 bit	1.7 V	ALSO ORGANISED AS 64M X 16		NOT SPECIFIED	NOT SPECIFIED		9 mm
MT29C2G24MAABAKAMD-5IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	130	VFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		1.8			32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.65 mm	85 Cel		32MX32	32M	-40 Cel		BOTTOM	R-PBGA-B130	1.95 V	1 mm		8 mm		1073741824 bit	1.7 V	ALSO ORGANISED AS 64M X 16					9 mm
MT29C4G48MAZBAAKS-5WT	Micron Technology	MEMORY CIRCUIT	OTHER	137	VFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		1.8			32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel		64MX32	64M	-25 Cel		BOTTOM	R-PBGA-B137	1.95 V	1 mm		10.5 mm		2147483648 bit	1.7 V	ALSO ORGANISED AS 128M X 16		NOT SPECIFIED	NOT SPECIFIED		13 mm
MT29C4G96MAYBACKD-5WT	Micron Technology	MEMORY CIRCUIT	OTHER	137	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		1.8			32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		64MX32	64M	-25 Cel		BOTTOM	R-PBGA-B137	1.95 V	1.1 mm		10.5 mm		2147483648 bit	1.7 V	ALSO ORGANISED AS 128M X 16		NOT SPECIFIED	NOT SPECIFIED		13 mm
MT29C4G96MAZBACKD-5WT	Micron Technology	MEMORY CIRCUIT	OTHER	137	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		1.8			32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		64MX32	64M	-25 Cel		BOTTOM	R-PBGA-B137	1.95 V	1.1 mm		10.5 mm		2147483648 bit	1.7 V	ALSO ORGANISED AS 128M X 16		NOT SPECIFIED	NOT SPECIFIED		13 mm
MT29C8G96MAZBADKD-5IT	Micron Technology	MEMORY CIRCUIT	OTHER	137	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		1.8			32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		64MX32	64M	-25 Cel		BOTTOM	R-PBGA-B137	1.95 V	1.1 mm		10.5 mm		2147483648 bit	1.7 V	ALSO ORGANISED AS 128M X 16		NOT SPECIFIED	NOT SPECIFIED		13 mm
MT29C8G96MAZBADKD-5WT	Micron Technology	MEMORY CIRCUIT	OTHER	137	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		1.8			32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		64MX32	64M	-25 Cel		BOTTOM	R-PBGA-B137	1.95 V	1.1 mm		10.5 mm		2147483648 bit	1.7 V	ALSO ORGANISED AS 128M X 16		NOT SPECIFIED	NOT SPECIFIED		13 mm
MT29C1G12MAACVAMD-5IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	130	VFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		1.8			32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.65 mm	85 Cel		16MX32	16M	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	R-PBGA-B130	1.95 V	1 mm		8 mm		536870912 bit	1.7 V	NAND FLASH IS ORGANISED AS 64M X 16	e1	30	260		9 mm
MT29C1G12MAACYAMD-5IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	130	VFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		1.8			32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.65 mm	85 Cel		16MX32	16M	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	R-PBGA-B130	1.95 V	1 mm		8 mm		536870912 bit	1.7 V	NAND FLASH IS ORGANISED AS 64M X 16	e1	30	260		9 mm
MT29C1G12MAADVAMD-5IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	130	VFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		1.8			32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.65 mm	85 Cel		16MX32	16M	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	R-PBGA-B130	1.95 V	1 mm		8 mm		536870912 bit	1.7 V	NAND FLASH IS ORGANISED AS 64M X 16	e1	30	260		9 mm
MT29C4G96MAZBACJG-5WT	Micron Technology	MEMORY CIRCUIT	OTHER	168	VFBGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA168,23X23,20	Other Memory ICs	.5 mm	85 Cel		256MX16	256M	-25 Cel		BOTTOM	S-PBGA-B168	1.95 V	.9 mm		12 mm	Not Qualified	4294967296 bit	1.7 V	MOBILE LPDDR DEVICE ALSO AVAILABLE		NOT SPECIFIED	NOT SPECIFIED		12 mm	25 ns
MT29C4G48MAZBAAKQ-5WT	Micron Technology	MEMORY CIRCUIT	OTHER	168	VFBGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		256MX16	256M	-25 Cel		BOTTOM	S-PBGA-B168	1.95 V	.75 mm		12 mm		4294967296 bit	1.7 V	MOBILE LPDDR DEVICE ALSO AVAILABLE		NOT SPECIFIED	NOT SPECIFIED		12 mm

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.