STMicroelectronics Other Function Memory ICs 34

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
LRI64-W4/1GE	STMicroelectronics	MEMORY CIRCUIT	OTHER		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		64 words				1	UNCASED CHIP				85 Cel	64X1	64	-20 Cel		UPPER	X-XUUC-N		3 V				64 bit	1.5 V
SRIX4K-SBN18/1GE	STMicroelectronics	MEMORY CIRCUIT	OTHER		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		128 words	3			32	UNCASED CHIP				85 Cel	128X32	128	-25 Cel		UPPER	X-XUUC-N		3.5 V			Not Qualified	4096 bit	2.5 V
SRTAG2K-DMC6T/2	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		256 words				8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE			.5 mm	85 Cel	256X8	256	-40 Cel		DUAL	R-PDSO-N8			.6 mm	2 mm		2048 bit							3 mm
STTS424BDN3F	STMicroelectronics	MEMORY CIRCUIT		8		RECTANGULAR	PLASTIC/EPOXY	YES			NO LEAD								SMALL OUTLINE								NICKEL PALLADIUM GOLD	DUAL	R-PDSO-N8	1				Not Qualified				e4	30	260
DSM2180F3-90T6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	52	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	ASYNCHRONOUS		131072 words	5			8	FLATPACK			.65 mm	85 Cel	128KX8	128K	-40 Cel	NICKEL PALLADIUM GOLD	QUAD	S-PQFP-G52		5.5 V	2.35 mm	10 mm	Not Qualified	1048576 bit	4.5 V		e4				10 mm
DSM2180F3V-15K6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	ASYNCHRONOUS		131072 words	3.3			8	CHIP CARRIER			1.27 mm	85 Cel	128KX8	128K	-40 Cel	MATTE TIN	QUAD	S-PQCC-J52		3.6 V	4.57 mm	19.1262 mm	Not Qualified	1048576 bit	3 V		e3				19.1262 mm
DSM2180F3V-15T6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	52	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	ASYNCHRONOUS		131072 words	3.3			8	FLATPACK			.65 mm	85 Cel	128KX8	128K	-40 Cel	NICKEL PALLADIUM GOLD	QUAD	S-PQFP-G52		3.6 V	2.35 mm	10 mm	Not Qualified	1048576 bit	3 V		e4				10 mm
DSM2190F4V-15K6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	ASYNCHRONOUS		262144 words	3.3			8	CHIP CARRIER			1.27 mm	85 Cel	256KX8	256K	-40 Cel	MATTE TIN	QUAD	S-PQCC-J52		3.6 V	4.57 mm	19.1262 mm	Not Qualified	2097152 bit	3 V	ALSO CONTAINS 32K X 8 SECONDARY FLASH MEMORY	e3				19.1262 mm
DSM2190F4V-15T6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	52	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words	3.3			8	FLATPACK			.65 mm	85 Cel	256KX8	256K	-40 Cel	NICKEL PALLADIUM GOLD	QUAD	S-PQFP-G52		3.6 V	2.35 mm	10 mm	Not Qualified	2097152 bit	3 V	ALSO CONTAINS 32K X 8 SECONDARY FLASH MEMORY	e4				10 mm
DSM2150F5V-12T6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	80	TFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words	3.3			16	FLATPACK, THIN PROFILE, FINE PITCH			.5 mm	85 Cel	256KX16	256K	-40 Cel	TIN/NICKEL PALLADIUM GOLD	QUAD	S-PQFP-G80		3.6 V	1.2 mm	12 mm	Not Qualified	4194304 bit	3 V	ALSO CONTAINS 32K BYTE OF SECONDARY FLASH MEMORY	e3/e4	NOT SPECIFIED	NOT SPECIFIED		12 mm
M36DR432AD10ZA6T	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	26 mA	2097152 words	1.8	FLASH+SRAM	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B66		2.2 V	1.4 mm	8 mm	Not Qualified	33554432 bit	1.65 V	SRAM IS ORGANIZED AS 256K X 16	e0			.00001 Amp	12 mm	100 ns
ST25TA02K-AC6B5	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		256 words				8	UNCASED CHIP				85 Cel	256X8	256	-40 Cel		UPPER	X-XUUC-N						2048 bit
ST25TA02KD-C6C5	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		256 words				8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE			.5 mm	85 Cel	256X8	256	-40 Cel		DUAL	R-PDSO-N8			.6 mm	2 mm		2048 bit				NOT SPECIFIED	NOT SPECIFIED		3 mm
ST25TA02KD-C6H5	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	5	BCC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		256 words				8	CHIP CARRIER			.4 mm	85 Cel	256X8	256	-40 Cel		BOTTOM	R-PDSO-N5			.6 mm	1.4 mm		2048 bit				NOT SPECIFIED	NOT SPECIFIED		1.7 mm
ST25TA16K-AB6B3	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		8192 words				8	UNCASED CHIP				85 Cel	8KX8	8K	-40 Cel		UPPER	X-XUUC-N						65536 bit
ST25TA512-AC6B5	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		64 words				8	UNCASED CHIP				85 Cel	64X8	64	-40 Cel		UPPER	X-XUUC-N						512 bit
ST25TA64K-AB6B3	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		8192 words				8	UNCASED CHIP				85 Cel	8KX8	8K	-40 Cel		UPPER	X-XUUC-N						65536 bit
ST25TA02KP-C6C5	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		256 words				8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE			.5 mm	85 Cel	256X8	256	-40 Cel		DUAL	R-PDSO-N8			.6 mm	2 mm		2048 bit				NOT SPECIFIED	NOT SPECIFIED		3 mm
ST25TA02K-AC6G5	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL		DIE	ROUND	UNSPECIFIED	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		256 words				8	UNCASED CHIP				85 Cel	256X8	256	-40 Cel		UPPER	O-XUUC-N						2048 bit
ST25TA02KP-C6G5	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL		DIE	ROUND	UNSPECIFIED	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		262144 words				8	UNCASED CHIP				85 Cel	256KX8	256K	-40 Cel		UPPER	O-XUUC-N						2097152 bit				NOT SPECIFIED	NOT SPECIFIED
ST25TA16KAB6G3	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL		DIE	ROUND	UNSPECIFIED	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		8192 words				8	UNCASED CHIP				85 Cel	8KX8	8K	-40 Cel		UPPER	O-XUUC-N						65536 bit
ST25TA64K-AB6G3	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL		DIE	ROUND	UNSPECIFIED	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		8192 words				8	UNCASED CHIP				85 Cel	8KX8	8K	-40 Cel		UPPER	O-XUUC-N						65536 bit
SMC128AFB6E	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		134217728 words				8	UNCASED CHIP				85 Cel	128MX8	128M	-40 Cel		UPPER	X-XUUC-N						1073741824 bit
SMC512AFB6E	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		536870912 words				8	UNCASED CHIP				85 Cel	512MX8	512M	-40 Cel		UPPER	X-XUUC-N						4294967296 bit
ST25TA512-AC6G5	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL		DIE	RECTANGULAR		YES	1	CMOS	NO LEAD	ASYNCHRONOUS		512 words				8	UNCASED CHIP	DIE OR CHIP			85 Cel	64X8	64	-40 Cel		UNSPECIFIED	R-XUUC-N						512 bit
M24SR04-GSG12I/2	STMicroelectronics	MEMORY CIRCUIT			DIE	ROUND	UNSPECIFIED	YES	1	CMOS	NO LEAD	SYNCHRONOUS		512 words	3.3			8	UNCASED CHIP	WAFER				512X8	512			UNSPECIFIED	O-XUUC-N		5.5 V				4096 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED
M24SR64-YDW8T/2	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS		65536 words				1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.65 mm	105 Cel	64KX1	64K	-40 Cel		DUAL	R-PDSO-G8		5.5 V	1.2 mm	2.9 mm		65536 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED		4.3 mm
M24SR64-YMN8T/2	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS		65536 words				1	SMALL OUTLINE			1.27 mm	105 Cel	64KX1	64K	-40 Cel		DUAL	R-PDSO-G8		5.5 V	1.75 mm	3.9 mm		65536 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED		4.9 mm
M24SR64-YSG12I/2	STMicroelectronics	MEMORY CIRCUIT			DIE	RECTANGULAR		YES	1	CMOS		SYNCHRONOUS		8192 words	3.3			8	UNCASED CHIP	DIE OR CHIP				8KX8	8K			UNSPECIFIED	R-XUUC-N		5.5 V				65536 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED
M24SR02-YSG12I/2	STMicroelectronics	MEMORY CIRCUIT			DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	SYNCHRONOUS		2048 words	3.3			1	UNCASED CHIP					2KX1	2K			UPPER	X-XUUC-N		5.5 V				2048 bit	2.7 V
ST25TB512-AC6G6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		16 words				32	UNCASED CHIP				85 Cel	16X32	16	-40 Cel		UPPER	X-XUUC-N						512 bit
ST25TB02K-AC6G6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL		DIE	ROUND	UNSPECIFIED	YES	1		NO LEAD			2048 words				1	UNCASED CHIP	DIE OR CHIP			85 Cel	2KX1	2K	-40 Cel		UNSPECIFIED	O-XUUC-N						2048 bit
ST25TB04K-AC6G6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	4	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		4096 words				1	UNCASED CHIP				85 Cel	4KX1	4K	-40 Cel		UPPER	R-XUUC-N4						4096 bit
ST25TB512-AT6G6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL		DIE	ROUND	UNSPECIFIED	YES	1		NO LEAD			512 words				1	UNCASED CHIP	DIE OR CHIP			85 Cel	512X1	512	-40 Cel		UNSPECIFIED	O-XUUC-N						512 bit

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.