DIP OTP ROM 61

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)
M27C1001-70B1	STMicroelectronics	OTP ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.6	OTP ROMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	MATTE TIN	DUAL	R-PDIP-T32		5.5 V	4.83 mm		15.24 mm	Not Qualified	1048576 bit	4.5 V		e3		.0001 Amp	42.035 mm	70 ns
M27C2001-10B1	STMicroelectronics	OTP ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	262144 words	COMMON	5	5	8	IN-LINE	DIP32,.6	OTP ROMs	2.54 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	MATTE TIN	DUAL	R-PDIP-T32		5.5 V	5.08 mm		15.24 mm	Not Qualified	2097152 bit	4.5 V		e3		.0001 Amp	41.91 mm	100 ns
JBP28L22MJ	Texas Instruments	OTP ROM	MILITARY	20	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	BIPOLAR	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		256 words		5	5	8	IN-LINE	DIP20,.3	OTP ROMs	2.54 mm	125 Cel		256X8	256	-55 Cel		DUAL	R-GDIP-T20		5.5 V	5.08 mm		7.62 mm	Not Qualified	2048 bit	4.5 V					24.195 mm	75 ns
JBP28L42MJ	Texas Instruments	OTP ROM	MILITARY	20	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	BIPOLAR	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	512 words	SEPARATE	5	5	8	IN-LINE	DIP20,.3	OTP ROMs	2.54 mm	125 Cel		512X8	512	-55 Cel	TIN LEAD	DUAL	R-GDIP-T20		5.25 V	5.08 mm	25 MHz	7.62 mm	Not Qualified	4096 bit	4.75 V		e0			24.195 mm	70 ns
JBP28S42MJ	Texas Instruments	OTP ROM	MILITARY	20	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	BIPOLAR	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	512 words	SEPARATE	5	5	8	IN-LINE	DIP20,.3	OTP ROMs	2.54 mm	125 Cel		512X8	512	-55 Cel	TIN LEAD	DUAL	R-GDIP-T20		5.25 V	5.08 mm	25 MHz	7.62 mm	Not Qualified	4096 bit	4.75 V		e0			24.195 mm	70 ns
M27W201-80B6	STMicroelectronics	OTP ROM	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	15 mA	262144 words	COMMON	3	3/3.3	8	IN-LINE	DIP32,.6	OTP ROMs	2.54 mm	85 Cel	3-STATE	256KX8	256K	-40 Cel	MATTE TIN	DUAL	R-PDIP-T32		3.6 V	4.83 mm		15.24 mm	Not Qualified	2097152 bit	2.7 V	ACCESS TIME 70 NANO SECS AT VCC 3V TO 3.6V	e3		.000015 Amp	42.035 mm	80 ns
M27W401-80B6	STMicroelectronics	OTP ROM	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	15 mA	524288 words	COMMON	3	3/3.3	8	IN-LINE	DIP32,.6	OTP ROMs	2.54 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	MATTE TIN	DUAL	R-PDIP-T32		3.6 V	5.08 mm		15.24 mm	Not Qualified	4194304 bit	2.7 V	ACCESS TIME 70 NANO SECS AT VCC 3V TO 3.6V	e3		.000015 Amp	41.91 mm	80 ns
M27W402-100B6	STMicroelectronics	OTP ROM	INDUSTRIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	262144 words	COMMON	3	3/3.3	16	IN-LINE	DIP40,.6	OTP ROMs	2.54 mm	85 Cel	3-STATE	256KX16	256K	-40 Cel	TIN	DUAL	R-PDIP-T40		3.6 V			15.24 mm	Not Qualified	4194304 bit	2.7 V	ACCESS TIME 80 NANO SECS AT VCC 3V TO 3.6V	e3	245	.000015 Amp	52.18 mm	100 ns
M27C256B-10B6	STMicroelectronics	OTP ROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	OTP ROMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-PDIP-T28		5.5 V	5.08 mm		15.24 mm	Not Qualified	262144 bit	4.5 V		e3		.0001 Amp	36.83 mm	100 ns	12.75
M27C256B-90B6	STMicroelectronics	OTP ROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	OTP ROMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-PDIP-T28		5.5 V	5.08 mm		15.24 mm	Not Qualified	262144 bit	4.5 V		e3		.0001 Amp	36.83 mm	90 ns	12.75
M27V322-100B1	STMicroelectronics	OTP ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	2097152 words	COMMON	3.3	3.3	16	IN-LINE	DIP42,.6	OTP ROMs	2.54 mm	70 Cel	3-STATE	2MX16	2M	0 Cel	MATTE TIN	DUAL	R-PDIP-T42		3.63 V	5.08 mm		15.24 mm	Not Qualified	33554432 bit	2.97 V		e3		.00006 Amp	52.455 mm	100 ns
JBP18S030MJ	Texas Instruments	OTP ROM	MILITARY	16	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	110 mA	32 words	SEPARATE	5	5	8	IN-LINE	DIP16,.3	OTP ROMs	2.54 mm	125 Cel		32X8	32	-55 Cel	TIN LEAD	DUAL	R-GDIP-T16		5.5 V	5.08 mm		7.62 mm	Not Qualified	256 bit	4.5 V		e0			19.56 mm	50 ns
AT27C010-45PU	Atmel	OTP ROM	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.6	OTP ROMs	2.54 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	MATTE TIN	DUAL	R-PDIP-T32	1	5.5 V	4.826 mm		15.24 mm	Not Qualified	1048576 bit	4.5 V		e3	245	.00001 Amp	42.037 mm	45 ns

OTP ROM

OTP ROM, or One-Time Programmable Read-Only Memory, is a type of non-volatile computer memory that is programmed once and cannot be reprogrammed. OTP ROM is used to store data that needs to be permanently stored and cannot be changed or updated in the future.

OTP ROM is created using a process similar to that used to manufacture Mask ROM. However, instead of programming the memory during the manufacturing process, OTP ROM is programmed after the manufacturing process, but before it is delivered to the customer. This allows the customer to program the memory with the data that they need to store permanently.

OTP ROM is commonly used in devices such as microcontrollers, smart cards, and other electronic devices that require permanent storage of data. It is ideal for storing critical data, such as system settings, encryption keys, and other sensitive information that needs to be permanently stored and cannot be changed or updated in the future.