| Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Total Dose (V) | Package Body Material | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | Terminal Finish | Terminal Position | No. of Ports | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Output Enable | Maximum Standby Current | Length | Maximum Access Time |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
Cypress Semiconductor |
STANDARD SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
275 mA |
524288 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
36 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
512KX36 |
512K |
0 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
167 MHz |
14 mm |
Not Qualified |
18874368 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e3 |
40 |
260 |
.07 Amp |
20 mm |
3.4 ns |
|||||||||||
|
Integrated Device Technology |
MULTI-PORT SRAM |
INDUSTRIAL |
100 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
250 mA |
4096 words |
COMMON |
5 |
5 |
16 |
FLATPACK |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
4KX16 |
4K |
2 V |
-40 Cel |
TIN LEAD |
QUAD |
2 |
S-PQFP-G100 |
3 |
Not Qualified |
65536 bit |
e0 |
20 |
240 |
.004 Amp |
55 ns |
||||||||||||||||||
|
Integrated Device Technology |
MULTI-PORT SRAM |
INDUSTRIAL |
100 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
190 mA |
8192 words |
COMMON |
3.3 |
3.3 |
16 |
FLATPACK |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
8KX16 |
8K |
3 V |
-40 Cel |
Tin/Lead (Sn85Pb15) |
QUAD |
2 |
S-PQFP-G100 |
3 |
Not Qualified |
131072 bit |
e0 |
20 |
240 |
.015 Amp |
25 ns |
||||||||||||||||||
|
|
Cypress Semiconductor |
ZBT SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
225 mA |
131072 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
36 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
128KX36 |
128K |
3.14 V |
0 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
3 |
3.63 V |
1.6 mm |
133 MHz |
14 mm |
Not Qualified |
4718592 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e3 |
40 |
260 |
.04 Amp |
20 mm |
4 ns |
||||||||||
|
|
Integrated Silicon Solution |
CACHE SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
220 mA |
262144 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
18 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
85 Cel |
3-STATE |
256KX18 |
256K |
3.14 V |
-40 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
3 |
3.465 V |
1.6 mm |
200 MHz |
14 mm |
Not Qualified |
4718592 bit |
3.135 V |
e3 |
10 |
260 |
.085 Amp |
20 mm |
3.1 ns |
|||||||||||
|
|
Integrated Silicon Solution |
STANDARD SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
1048576 words |
3.3 |
18 |
FLATPACK, LOW PROFILE |
.65 mm |
85 Cel |
1MX18 |
1M |
-40 Cel |
QUAD |
R-PQFP-G100 |
3.465 V |
1.6 mm |
14 mm |
18874368 bit |
3.135 V |
NOT SPECIFIED |
NOT SPECIFIED |
20 mm |
3 ns |
||||||||||||||||||||||||
|
Cypress Semiconductor |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
205 mA |
131072 words |
COMMON |
3.3 |
3.3 |
8 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
3 V |
0 Cel |
TIN LEAD |
QUAD |
2 |
S-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
50 MHz |
14 mm |
Not Qualified |
1048576 bit |
3 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE |
e0 |
.00025 Amp |
14 mm |
25 ns |
||||||||||||
|
Cypress Semiconductor |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
165 mA |
4096 words |
COMMON |
3.3 |
3.3 |
16 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
4KX16 |
4K |
2 V |
0 Cel |
TIN LEAD |
QUAD |
2 |
S-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
65536 bit |
3 V |
e0 |
.00005 Amp |
14 mm |
25 ns |
||||||||||||||
|
Cypress Semiconductor |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
300 mA |
4096 words |
COMMON |
5 |
5 |
18 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
4KX18 |
4K |
4.5 V |
0 Cel |
Tin/Lead (Sn/Pb) |
QUAD |
2 |
S-PQFP-G100 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
73728 bit |
4.5 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE |
e0 |
.0005 Amp |
14 mm |
25 ns |
||||||||||||||
|
Cypress Semiconductor |
CACHE SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
2097152 words |
3.3 |
36 |
FLATPACK, LOW PROFILE |
.65 mm |
70 Cel |
2MX36 |
2M |
0 Cel |
MATTE TIN/NICKEL PALLADIUM GOLD |
QUAD |
R-PQFP-G100 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
75497472 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e3/e4 |
20 mm |
3 ns |
|||||||||||||||||||||||
|
Integrated Device Technology |
MULTI-PORT SRAM |
INDUSTRIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
335 mA |
65536 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
64KX8 |
64K |
4.5 V |
-40 Cel |
TIN LEAD |
QUAD |
2 |
S-PQFP-G100 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
524288 bit |
4.5 V |
INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN; LOW POWER STANDBY MODE |
e0 |
20 |
240 |
.01 Amp |
14 mm |
20 ns |
|||||||||||
|
Integrated Device Technology |
MULTI-PORT SRAM |
INDUSTRIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
310 mA |
65536 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
64KX8 |
64K |
4.5 V |
-40 Cel |
TIN LEAD |
QUAD |
2 |
S-PQFP-G100 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
524288 bit |
4.5 V |
INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN; LOW POWER STANDBY MODE |
e0 |
20 |
240 |
.03 Amp |
14 mm |
55 ns |
|||||||||||
|
Integrated Device Technology |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
210 mA |
4096 words |
COMMON |
5 |
5 |
16 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
4KX16 |
4K |
2 V |
0 Cel |
TIN LEAD |
QUAD |
2 |
S-PQFP-G100 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
65536 bit |
4.5 V |
INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN |
e0 |
20 |
240 |
.0015 Amp |
14 mm |
55 ns |
|||||||||||
|
Integrated Device Technology |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
290 mA |
8192 words |
COMMON |
5 |
5 |
16 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
8KX16 |
8K |
4.5 V |
0 Cel |
TIN LEAD |
QUAD |
2 |
S-PQFP-G100 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
131072 bit |
4.5 V |
INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE |
e0 |
20 |
240 |
.015 Amp |
14 mm |
20 ns |
|||||||||||
|
Integrated Device Technology |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
265 mA |
8192 words |
COMMON |
5 |
5 |
16 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
8KX16 |
8K |
4.5 V |
0 Cel |
TIN LEAD |
QUAD |
2 |
S-PQFP-G100 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
131072 bit |
4.5 V |
INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE |
e0 |
20 |
240 |
.015 Amp |
14 mm |
25 ns |
|||||||||||
|
Integrated Device Technology |
MULTI-PORT SRAM |
INDUSTRIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
430 mA |
65536 words |
COMMON |
5 |
5 |
16 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
64KX16 |
64K |
4.5 V |
-40 Cel |
TIN LEAD |
QUAD |
2 |
S-PQFP-G100 |
3 |
5.5 V |
1.6 mm |
66 MHz |
14 mm |
Not Qualified |
1048576 bit |
4.5 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE |
e0 |
20 |
240 |
.006 Amp |
14 mm |
20 ns |
||||||||||
|
Integrated Device Technology |
MULTI-PORT SRAM |
INDUSTRIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
185 mA |
16384 words |
COMMON |
3.3 |
3.3 |
16 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
16KX16 |
16K |
3 V |
-40 Cel |
TIN LEAD |
QUAD |
2 |
S-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
262144 bit |
3 V |
INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN |
e0 |
20 |
240 |
.003 Amp |
14 mm |
25 ns |
|||||||||||
|
Integrated Device Technology |
MULTI-PORT SRAM |
INDUSTRIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
230 mA |
32768 words |
COMMON |
3.3 |
3.3 |
16 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
32KX16 |
32K |
3 V |
-40 Cel |
TIN LEAD |
QUAD |
2 |
S-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
524288 bit |
3 V |
e0 |
20 |
240 |
.006 Amp |
14 mm |
20 ns |
||||||||||||
|
Integrated Device Technology |
MULTI-PORT SRAM |
INDUSTRIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
235 mA |
32768 words |
COMMON |
3.3 |
3.3 |
16 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
32KX16 |
32K |
3 V |
-40 Cel |
TIN LEAD |
QUAD |
2 |
S-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
524288 bit |
3 V |
INTERRUPT FLAGS |
e0 |
20 |
240 |
.006 Amp |
14 mm |
35 ns |
|||||||||||
|
Integrated Device Technology |
MULTI-PORT SRAM |
INDUSTRIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
220 mA |
32768 words |
COMMON |
3.3 |
3.3 |
18 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
32KX18 |
32K |
3 V |
-40 Cel |
TIN LEAD |
QUAD |
2 |
S-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
589824 bit |
3 V |
INTERRUPT FLAG |
e0 |
20 |
240 |
.003 Amp |
14 mm |
20 ns |
|||||||||||
|
Integrated Device Technology |
MULTI-PORT SRAM |
INDUSTRIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
220 mA |
65536 words |
COMMON |
3.3 |
3.3 |
18 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
64KX18 |
64K |
3 V |
-40 Cel |
TIN LEAD |
QUAD |
2 |
S-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
1179648 bit |
3 V |
e0 |
20 |
240 |
.003 Amp |
14 mm |
20 ns |
||||||||||||
|
Integrated Device Technology |
MULTI-PORT SRAM |
INDUSTRIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
300 mA |
2048 words |
COMMON |
5 |
5 |
16 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
2KX16 |
2K |
2 V |
-40 Cel |
TIN LEAD |
QUAD |
2 |
S-PQFP-G100 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
32768 bit |
4.5 V |
e0 |
20 |
240 |
.004 Amp |
14 mm |
25 ns |
||||||||||||
|
|
Cypress Semiconductor |
MULTI-PORT SRAM |
INDUSTRIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
305 mA |
4096 words |
COMMON |
5 |
5 |
18 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
4KX18 |
4K |
2 V |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
QUAD |
2 |
S-PQFP-G100 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
73728 bit |
4.5 V |
e4 |
40 |
260 |
.0015 Amp |
14 mm |
15 ns |
|||||||||||
|
Cypress Semiconductor |
STANDARD SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
175 mA |
1048576 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
18 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
1MX18 |
1M |
3.14 V |
0 Cel |
TIN LEAD |
QUAD |
R-PQFP-G100 |
3 |
3.63 V |
1.6 mm |
100 MHz |
14 mm |
Not Qualified |
18874368 bit |
3.135 V |
FLOW-THROUGH ARCHITECTURE |
e0 |
.07 Amp |
20 mm |
8.5 ns |
|||||||||||||
|
|
Cypress Semiconductor |
ZBT SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
2097152 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
18 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
2MX18 |
2M |
3.14 V |
0 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
133 MHz |
14 mm |
Not Qualified |
37748736 bit |
3.135 V |
FLOW-THROUGH ARCHITECTURE |
e3 |
40 |
260 |
.12 Amp |
20 mm |
6.5 ns |
|||||||||||
|
|
Cypress Semiconductor |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
250 mA |
8192 words |
COMMON |
5 |
5 |
16 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
8KX16 |
8K |
4.5 V |
0 Cel |
MATTE TIN |
QUAD |
2 |
S-PQFP-G100 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
131072 bit |
4.5 V |
e3 |
40 |
260 |
.015 Amp |
14 mm |
25 ns |
|||||||||||
|
|
Cypress Semiconductor |
MULTI-PORT SRAM |
INDUSTRIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
290 mA |
8192 words |
COMMON |
5 |
5 |
16 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
8KX16 |
8K |
4.5 V |
-40 Cel |
MATTE TIN |
QUAD |
2 |
S-PQFP-G100 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
131072 bit |
4.5 V |
e3 |
40 |
260 |
.015 Amp |
14 mm |
25 ns |
|||||||||||
|
|
Cypress Semiconductor |
CACHE SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
240 mA |
65536 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
32 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
64KX32 |
64K |
3.14 V |
0 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
166 MHz |
14 mm |
Not Qualified |
2097152 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e3 |
40 |
260 |
.04 Amp |
20 mm |
3.5 ns |
||||||||||
|
|
Cypress Semiconductor |
CACHE SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
2097152 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
36 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
2MX36 |
2M |
3.14 V |
0 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
200 MHz |
14 mm |
Not Qualified |
75497472 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e3 |
40 |
260 |
20 mm |
3 ns |
||||||||||||
|
|
Cypress Semiconductor |
CACHE SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
375 mA |
1048576 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
36 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
1MX36 |
1M |
3.14 V |
0 Cel |
NICKEL PALLADIUM GOLD |
QUAD |
R-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
167 MHz |
14 mm |
Not Qualified |
37748736 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e4 |
40 |
260 |
20 mm |
3.4 ns |
|||||||||||
|
|
Integrated Silicon Solution |
CACHE SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
275 mA |
262144 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
36 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
85 Cel |
3-STATE |
256KX36 |
256K |
3.14 V |
-40 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
3.465 V |
1.6 mm |
200 MHz |
14 mm |
Not Qualified |
9437184 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e3 |
10 |
260 |
.105 Amp |
20 mm |
3.1 ns |
|||||||||||
|
|
Cypress Semiconductor |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
205 mA |
65536 words |
COMMON |
3.3 |
3.3 |
8 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
64KX8 |
64K |
3.14 V |
0 Cel |
MATTE TIN |
QUAD |
2 |
S-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
50 MHz |
14 mm |
Not Qualified |
524288 bit |
3 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE |
e3 |
40 |
260 |
.00025 Amp |
14 mm |
25 ns |
|||||||||
|
|
Cypress Semiconductor |
CACHE SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
475 mA |
1048576 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
36 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
85 Cel |
3-STATE |
1MX36 |
1M |
3.14 V |
-40 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
250 MHz |
14 mm |
Not Qualified |
37748736 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e3 |
40 |
260 |
20 mm |
2.6 ns |
|||||||||||
|
|
Cypress Semiconductor |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
165 mA |
65536 words |
COMMON |
3.3 |
3.3 |
8 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
64KX8 |
64K |
3 V |
0 Cel |
MATTE TIN |
QUAD |
2 |
S-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
524288 bit |
3 V |
e3 |
40 |
260 |
.00005 Amp |
14 mm |
25 ns |
|||||||||||
|
|
Cypress Semiconductor |
MULTI-PORT SRAM |
INDUSTRIAL |
100 |
VFBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
60 mA |
8192 words |
COMMON |
1.8 |
1.8/3 |
16 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
BGA100,10X10,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
8KX16 |
8K |
1.7 V |
-40 Cel |
Tin/Silver/Copper (Sn/Ag/Cu) |
BOTTOM |
2 |
S-PBGA-B100 |
3 |
1.9 V |
1 mm |
6 mm |
Not Qualified |
131072 bit |
1.7 V |
ALSO OPERATES AT 2.5V AND 3V SUPPLY |
e1 |
20 |
260 |
.000006 Amp |
6 mm |
55 ns |
||||||||||
|
Integrated Device Technology |
MULTI-PORT SRAM |
INDUSTRIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
335 mA |
65536 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
64KX8 |
64K |
4.5 V |
-40 Cel |
TIN LEAD |
QUAD |
2 |
S-PQFP-G100 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
524288 bit |
4.5 V |
e0 |
20 |
240 |
.01 Amp |
14 mm |
20 ns |
||||||||||||
|
Integrated Device Technology |
MULTI-PORT SRAM |
INDUSTRIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
310 mA |
65536 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
64KX8 |
64K |
4.5 V |
-40 Cel |
TIN LEAD |
QUAD |
2 |
S-PQFP-G100 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
524288 bit |
4.5 V |
e0 |
20 |
240 |
.03 Amp |
14 mm |
55 ns |
||||||||||||
|
|
Integrated Silicon Solution |
CACHE SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
210 mA |
262144 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
18 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
85 Cel |
3-STATE |
256KX18 |
256K |
3.14 V |
-40 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
3.465 V |
1.6 mm |
200 MHz |
14 mm |
Not Qualified |
4718592 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e3 |
10 |
260 |
.000075 Amp |
20 mm |
3.1 ns |
|||||||||||
|
|
Infineon Technologies |
ZBT SRAM |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
163 mA |
524288 words |
COMMON |
3.3 |
36 |
FLATPACK, LOW PROFILE |
QFP100,.7X.9,32 |
.65 mm |
85 Cel |
3-STATE |
512KX36 |
512K |
3.135 V |
-40 Cel |
QUAD |
1 |
R-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
167 MHz |
14 mm |
18874368 bit |
3.135 V |
PIPELINED ARCHITECTURE |
YES |
.065 Amp |
20 mm |
3.4 ns |
||||||||||||||||
|
|
Infineon Technologies |
STANDARD SRAM |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
163 mA |
524288 words |
COMMON |
3.3 |
36 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
.65 mm |
85 Cel |
512KX36 |
512K |
3.135 V |
-40 Cel |
QUAD |
R-PQFP-G100 |
3 |
3.63 V |
1.6 mm |
167 MHz |
14 mm |
18874368 bit |
3.135 V |
PIPE LINED ARCHITECTURE |
YES |
.08 Amp |
20 mm |
3.4 ns |
||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
100 |
LFQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
270 mA |
16384 words |
COMMON |
5 |
16 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
.5 mm |
85 Cel |
3-STATE |
16KX16 |
16K |
4.5 V |
-40 Cel |
QUAD |
2 |
S-PQFP-G100 |
5.5 V |
1.6 mm |
14 mm |
262144 bit |
4.5 V |
YES |
.015 Amp |
14 mm |
55 ns |
SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.
SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.
One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.
One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.