16 SRAM 15

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
NP5Q032AE3ESFC0E	Micron Technology	NON-VOLATILE SRAM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING			50 mA			3/3.3		SMALL OUTLINE	SOP16,.4	SRAMs	1.27 mm	85 Cel				-40 Cel		DUAL		R-PDSO-G16						Not Qualified	33554432 bit						.0002 Amp
NP5Q064AE3ESFC0E	Micron Technology	NON-VOLATILE SRAM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING			50 mA			3/3.3		SMALL OUTLINE	SOP16,.4	SRAMs	1.27 mm	85 Cel				-40 Cel		DUAL		R-PDSO-G16						Not Qualified	67108864 bit						.0002 Amp
M74HC670B1R	STMicroelectronics	STANDARD SRAM	MILITARY	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4 words	4.5	2/6	4	IN-LINE	DIP16,.3	Other Memory ICs	2.54 mm	125 Cel	3-STATE	4X4	4	-55 Cel	MATTE TIN	DUAL	1	R-PDIP-T16		6 V	5.1 mm		7.62 mm	Not Qualified	16 bit	2 V	e3			NO			280 ns
M74HC670M1R	STMicroelectronics	STANDARD SRAM	MILITARY	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		4 words	4.5	2/6	4	SMALL OUTLINE	SOP16,.25	Other Memory ICs	1.27 mm	125 Cel	3-STATE	4X4	4	-55 Cel	NICKEL PALLADIUM GOLD	DUAL	1	R-PDSO-G16		6 V	1.75 mm		3.9 mm	Not Qualified	16 bit	2 V	e4			NO		9.9 mm	280 ns
CD74HCT670M96G4	Texas Instruments	STANDARD SRAM	MILITARY	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		4 words	5	2/6	4	SMALL OUTLINE	SOP16,.25	Other Memory ICs	1.27 mm	125 Cel		4X4	4	-55 Cel		DUAL		R-PDSO-G16		5.5 V	1.75 mm		3.9 mm	Not Qualified	16 bit	4.5 V		NOT SPECIFIED	NOT SPECIFIED			9.9 mm	53 ns
CD74HCT670MTG4	Texas Instruments	STANDARD SRAM	MILITARY	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		4 words	5	2/6	4	SMALL OUTLINE	SOP16,.25	Other Memory ICs	1.27 mm	125 Cel		4X4	4	-55 Cel		DUAL		R-PDSO-G16		5.5 V	1.75 mm		3.9 mm	Not Qualified	16 bit	4.5 V		NOT SPECIFIED	NOT SPECIFIED			9.9 mm	53 ns
74HC670D,653	NXP Semiconductors	STANDARD SRAM	AUTOMOTIVE	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		4 words	5		4	SMALL OUTLINE			1.27 mm	125 Cel	3-STATE	4X4	4	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL	1	R-PDSO-G16	1	6 V	1.75 mm		3.9 mm	Not Qualified	16 bit	2 V	e4	30	260	NO		9.9 mm	59 ns
74HC670DB,112	NXP Semiconductors	STANDARD SRAM	AUTOMOTIVE	16	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		4 words	5	2/6	4	SMALL OUTLINE, SHRINK PITCH	SSOP16,.3	Other Memory ICs	.65 mm	125 Cel		4X4	4	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G16	1	6 V	2 mm		5.3 mm	Not Qualified	16 bit	2 V	e4					6.2 mm	59 ns
74HC670DB,118	NXP Semiconductors	STANDARD SRAM	AUTOMOTIVE	16	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		4 words	5		4	SMALL OUTLINE, SHRINK PITCH			.65 mm	125 Cel		4X4	4	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G16	1	6 V	2 mm		5.3 mm	Not Qualified	16 bit	2 V	e4					6.2 mm	59 ns
74HC670N,652	NXP Semiconductors	STANDARD SRAM	AUTOMOTIVE	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4 words	5	2/6	4	IN-LINE	DIP16,.3	Other Memory ICs	2.54 mm	125 Cel	3-STATE	4X4	4	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	1	R-PDIP-T16		6 V	4.7 mm		7.62 mm	Not Qualified	16 bit	2 V	e4			NO		21.6 mm	59 ns
74HCT670D,652	NXP Semiconductors	STANDARD SRAM	AUTOMOTIVE	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		4 words	5	5	4	SMALL OUTLINE	SOP16,.25	Other Memory ICs	1.27 mm	125 Cel	3-STATE	4X4	4	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	1	R-PDSO-G16	1	5.5 V	1.75 mm		3.9 mm	Not Qualified	16 bit	4.5 V	e4			NO		9.9 mm	60 ns
74HCT670D,653	NXP Semiconductors	STANDARD SRAM	AUTOMOTIVE	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		4 words	5		4	SMALL OUTLINE			1.27 mm	125 Cel	3-STATE	4X4	4	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	1	R-PDSO-G16	1	5.5 V	1.75 mm		3.9 mm	Not Qualified	16 bit	4.5 V	e4			NO		9.9 mm	60 ns
SNJ54LS670W	Texas Instruments	STANDARD SRAM	MILITARY	16	DFP	RECTANGULAR	CERAMIC, GLASS-SEALED	YES	1	TTL	MIL-PRF-38535	FLAT	PARALLEL	ASYNCHRONOUS		4 words	5	5	4	FLATPACK	FL16,.3	Other Memory ICs	1.27 mm	125 Cel	3-STATE	4X4	4	-55 Cel	TIN LEAD	DUAL		R-GDFP-F16		5.25 V	2.03 mm	35 MHz	6.73 mm	Not Qualified	16 bit	4.75 V	e0			NO	.05 Amp	10.3 mm	45 ns
CD74HCT670M96E4	Texas Instruments	STANDARD SRAM	MILITARY	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		4 words	5	5	4	SMALL OUTLINE	SOP16,.25	Other Memory ICs	1.27 mm	125 Cel		4X4	4	-55 Cel		DUAL		R-PDSO-G16		5.5 V	1.75 mm		3.9 mm	Not Qualified	16 bit	4.5 V		NOT SPECIFIED	NOT SPECIFIED			9.9 mm	53 ns
CD74HCT670MTE4	Texas Instruments	STANDARD SRAM	MILITARY	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		4 words	5	5	4	SMALL OUTLINE	SOP16,.25	Other Memory ICs	1.27 mm	125 Cel		4X4	4	-55 Cel		DUAL		R-PDSO-G16		5.5 V	1.75 mm		3.9 mm	Not Qualified	16 bit	4.5 V		NOT SPECIFIED	NOT SPECIFIED			9.9 mm	53 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.