44 SRAM 54

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
CY7C1021BN-15VXI	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	130 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE	SOJ44,.44	SRAMs	1.27 mm	85 Cel	3-STATE	64KX16	64K	4.5 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	R-PDSO-J44	3	5.5 V	3.7592 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V	e4	40	260	.01 Amp	28.575 mm	15 ns
CY7C1021BN-15ZXI	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	130 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	3-STATE	64KX16	64K	4.5 V	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL	R-PDSO-G44	3	5.5 V	1.194 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V	e4	20	260	.01 Amp	18.415 mm	15 ns
CY7C1041BNV33L-15ZXC	Cypress Semiconductor	STANDARD SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	170 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	70 Cel	3-STATE	256KX16	256K	2 V	0 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL	R-PDSO-G44	3	3.6 V	1.194 mm	10.16 mm	Not Qualified	4194304 bit	3 V	e4	20	260	.00033 Amp	18.415 mm	15 ns
CY7C1021BL-15ZXIT	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		5		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel		64KX16	64K		-40 Cel		DUAL	R-PDSO-G44		5.5 V	1.194 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V					18.415 mm	15 ns
CY7C1021BN-15VXE	Cypress Semiconductor	STANDARD SRAM	AUTOMOTIVE	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	J BEND	PARALLEL	ASYNCHRONOUS	130 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE	SOJ44,.44	SRAMs	1.27 mm	125 Cel	3-STATE	64KX16	64K	4.5 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	R-PDSO-J44	3	5.5 V	3.7592 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V	e4	40	260	.015 Amp	28.575 mm	15 ns
IS62WV10248EBLL-45TLI-TR	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		1048576 words		3		8	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel		1MX8	1M		-40 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm	10.16 mm		8388608 bit	2.2 V		NOT SPECIFIED	NOT SPECIFIED		18.41 mm	45 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.