48 SRAM 63

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
IS61WV102416BLL-10MI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	95 mA	1048576 words	COMMON	3.3	2.5/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel		3-STATE	1MX16	1M	1.2 V	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B48	3	3.6 V	1.2 mm	9 mm	Not Qualified	16777216 bit	2.4 V	e0	30	235		.02 Amp	11 mm	10 ns
IS64WV102416BLL-10MA3	Integrated Silicon Solution	STANDARD SRAM	AUTOMOTIVE	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	140 mA	1048576 words	COMMON	3.3	2.5/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	125 Cel		3-STATE	1MX16	1M	1.2 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B48	3	3.6 V	1.2 mm	9 mm	Not Qualified	16777216 bit	2.4 V	e0				.05 Amp	11 mm	10 ns
IS61WV10248BLL-10MLI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	100 mA	1048576 words	COMMON	3	2.5/3.3	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	SRAMs	.75 mm	85 Cel		3-STATE	1MX8	1M	1.2 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1.2 mm	9 mm	Not Qualified	8388608 bit	2.4 V	e1	10	260		.025 Amp	11 mm	10 ns
IS66WVE4M16TBLL-70BLI	Integrated Silicon Solution	PSEUDO STATIC RAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	25 mA	4194304 words	COMMON			16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30		.75 mm	85 Cel	NO	3-STATE	4MX16	4M	2.7 V	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B48		3.6 V	1.2 mm	6 mm		67108864 bit	2.7 V	e1	10	260	NO	.00015 Amp	8 mm	70 ns
IS61WV204816BLL-10TLI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		2097152 words		3		16	SMALL OUTLINE, THIN PROFILE			.5 mm	85 Cel			2MX16	2M		-40 Cel		DUAL		R-PDSO-G48		3.6 V	1.2 mm	12 mm		33554432 bit	2.4 V		NOT SPECIFIED	NOT SPECIFIED			18.4 mm	10 ns
IS64WV204816BLL-12CTLA3	Integrated Silicon Solution	STANDARD SRAM	AUTOMOTIVE	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		2097152 words		3		16	SMALL OUTLINE, THIN PROFILE			.5 mm	125 Cel			2MX16	2M		-40 Cel		DUAL		R-PDSO-G48		3.6 V	1.2 mm	12 mm		33554432 bit	2.4 V		NOT SPECIFIED	NOT SPECIFIED			18.4 mm	12 ns
IS62WV51216GBLL-45TLI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		3		16	SMALL OUTLINE, THIN PROFILE			.5 mm	85 Cel			512KX16	512K		-40 Cel		DUAL		R-PDSO-G48		3.6 V	1.2 mm	12 mm		8388608 bit	2.2 V		NOT SPECIFIED	NOT SPECIFIED			18.4 mm	45 ns
IS62WV51216HBLL-45B2LI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		524288 words		3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel			512KX16	512K		-40 Cel		BOTTOM		R-PBGA-B48		3.6 V	1 mm	6 mm		8388608 bit	2.2 V		NOT SPECIFIED	NOT SPECIFIED			8 mm	45 ns
IS61WV204816BLL-10TLI-TR	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		2097152 words		3		16	SMALL OUTLINE, THIN PROFILE			.5 mm	85 Cel			2MX16	2M		-40 Cel		DUAL		R-PDSO-G48		3.6 V	1.2 mm	12 mm		33554432 bit	2.2 V		NOT SPECIFIED	NOT SPECIFIED			18.4 mm	10 ns
IS62WV102416DBLL-45TLI-TR	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		1048576 words		3.3		16	SMALL OUTLINE, THIN PROFILE			.5 mm	85 Cel			1MX16	1M		-40 Cel		DUAL		R-PDSO-G48		3.6 V	1.2 mm	12 mm		16777216 bit	2.2 V		NOT SPECIFIED	NOT SPECIFIED			18.4 mm	45 ns
IS62WV102416FBLL-45BLI-TR	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		1048576 words		3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel			1MX16	1M		-40 Cel		BOTTOM		R-PBGA-B48		3.6 V	1 mm	6 mm		16777216 bit	2.2 V		NOT SPECIFIED	NOT SPECIFIED			8 mm	45 ns
IS62WV102416GBLL-45TLI-TR	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		1048576 words		3		16	SMALL OUTLINE, THIN PROFILE			.5 mm	85 Cel			1MX16	1M		-40 Cel		DUAL		R-PDSO-G48		3.6 V	1.2 mm	12 mm		16777216 bit	2.2 V		NOT SPECIFIED	NOT SPECIFIED			18.4 mm	45 ns
IS62WV51216GBLL-45TLI-TR	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		3		16	SMALL OUTLINE, THIN PROFILE			.5 mm	85 Cel			512KX16	512K		-40 Cel		DUAL		R-PDSO-G48		3.6 V	1.2 mm	12 mm		8388608 bit	2.2 V		NOT SPECIFIED	NOT SPECIFIED			18.4 mm	45 ns
IS66WVE4M16EALL-70BLI-TR	Integrated Silicon Solution	PSEUDO STATIC RAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		4194304 words				16	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	85 Cel			4MX16	4M		-40 Cel		BOTTOM		R-PBGA-B48		1.95 V	1.2 mm	6 mm		67108864 bit	1.7 V		NOT SPECIFIED	NOT SPECIFIED			8 mm	70 ns
IS64WV102416BLL-10MLA3-TR	Integrated Silicon Solution	STANDARD SRAM	AUTOMOTIVE	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		1048576 words		3.3		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	125 Cel			1MX16	1M		-40 Cel		BOTTOM		R-PBGA-B48		3.6 V	1.2 mm	9 mm		16777216 bit	2.4 V						11 mm	10 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.