BGA SRAM 36

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
UPD44645092AF5-E40-FQ1-A	Renesas Electronics	STANDARD SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS		8388608 words	SEPARATE		1.5/1.8,1.8	9	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	8MX9	8M	1.7 V	0 Cel		BOTTOM		R-PBGA-B165				250 MHz		Not Qualified	75497472 bit								.45 ns
UPD44645362AF5-E40-FQ1-A	Renesas Electronics	STANDARD SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	740 mA	2097152 words	SEPARATE		1.5/1.8,1.8	36	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	2MX36	2M	1.7 V	0 Cel		BOTTOM		R-PBGA-B165				250 MHz		Not Qualified	75497472 bit								.45 ns
UPD44645362AF5-E50-FQ1-A	Renesas Electronics	STANDARD SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	650 mA	2097152 words	SEPARATE		1.5/1.8,1.8	36	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	2MX36	2M	1.7 V	0 Cel		BOTTOM		R-PBGA-B165				200 MHz		Not Qualified	75497472 bit								.45 ns
UPD44645094AF5-E40-FQ1-A	Renesas Electronics	STANDARD SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	470 mA	8388608 words	SEPARATE		1.5/1.8,1.8	9	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	8MX9	8M	1.7 V	0 Cel		BOTTOM		R-PBGA-B165				250 MHz		Not Qualified	75497472 bit						.35 Amp		.45 ns
UPD44645364AF5-E40-FQ1-A	Renesas Electronics	STANDARD SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	580 mA	2097152 words	SEPARATE		1.5/1.8,1.8	36	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	2MX36	2M	1.7 V	0 Cel		BOTTOM		R-PBGA-B165				250 MHz		Not Qualified	75497472 bit								.45 ns
UPD44645364AF5-E50-FQ1-A	Renesas Electronics	STANDARD SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	510 mA	2097152 words	SEPARATE		1.5/1.8,1.8	36	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	2MX36	2M	1.7 V	0 Cel		BOTTOM		R-PBGA-B165				200 MHz		Not Qualified	75497472 bit								.45 ns
CY7C1520KV18-250BZIT	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	530 mA	2097152 words	COMMON		1.5/1.8,1.8	36	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	2MX36	2M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165				250 MHz		Not Qualified	75497472 bit								.45 ns
R1Q3A7236ABB-33IB0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	850 mA	2097152 words	SEPARATE		1.5/1.8,1.8	36	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	2MX36	2M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165	3			300 MHz		Not Qualified	75497472 bit								.45 ns
R1Q3A7218ABB-33IA0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	820 mA	4194304 words	SEPARATE		1.5/1.8,1.8	18	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	4MX18	4M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165	3			300 MHz		Not Qualified	75497472 bit								.45 ns
R1QEA7218ABG-19IB0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	1030 mA	4194304 words	COMMON		1.5/1.8,1.8	18	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	4MX18	4M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165	3			533 MHz		Not Qualified	75497472 bit						.87 Amp		.45 ns
R1QDA3636CBB-19IB0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	1280 mA	1048576 words	SEPARATE		1.5/1.8,1.8	36	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	1MX36	1M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165	3			533 MHz		Not Qualified	37748736 bit						.91 Amp		.45 ns
R1QHA7236ABG-25IA0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	910 mA	2097152 words	COMMON		1.5/1.8,1.8	36	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	2MX36	2M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165	3			400 MHz		Not Qualified	75497472 bit						.79 Amp		.55 ns
R1QHA7236ABG-25IB0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	910 mA	2097152 words	COMMON		1.5/1.8,1.8	36	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	2MX36	2M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165	3			400 MHz		Not Qualified	75497472 bit						.79 Amp		.55 ns
R1Q4A7236ABG-33IB0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	760 mA	2097152 words	COMMON		1.5/1.8,1.8	36	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	2MX36	2M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165	3			300 MHz		Not Qualified	75497472 bit								.45 ns
R1Q4A7236ABG-40IA0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	680 mA	2097152 words	COMMON		1.5/1.8,1.8	36	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	2MX36	2M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165	3			250 MHz		Not Qualified	75497472 bit								.45 ns
R1Q2A7218ABB-40IA0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	890 mA	4194304 words	SEPARATE		1.5/1.8,1.8	18	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	4MX18	4M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165	3			250 MHz		Not Qualified	75497472 bit								.45 ns
R1QDA3618CBG-20IB0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	1160 mA	2097152 words	SEPARATE		1.5/1.8,1.8	18	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	2MX18	2M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165	3			500 MHz		Not Qualified	37748736 bit						.83 Amp		.45 ns
R1QDA3618CBG-19IB0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	1220 mA	2097152 words	SEPARATE		1.5/1.8,1.8	18	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	2MX18	2M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165	3			533 MHz		Not Qualified	37748736 bit						.87 Amp		.45 ns
R1QAA7236ABB-20IA0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	1220 mA	2097152 words	SEPARATE		1.5/1.8,1.8	36	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	2MX36	2M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165	3			500 MHz		Not Qualified	75497472 bit						.87 Amp		.45 ns
R1QAA7218ABB-20IA0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	1160 mA	4194304 words	SEPARATE		1.5/1.8,1.8	18	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	4MX18	4M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165	3			500 MHz		Not Qualified	75497472 bit						.83 Amp		.45 ns
R1QDA7236ABB-19IB0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	1280 mA	2097152 words	SEPARATE		1.5/1.8,1.8	36	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	2MX36	2M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165	3			533 MHz		Not Qualified	75497472 bit						.91 Amp		.45 ns
R1QDA7218ABB-20IB0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	1160 mA	4194304 words	SEPARATE		1.5/1.8,1.8	18	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	4MX18	4M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165	3			500 MHz		Not Qualified	75497472 bit						.83 Amp		.45 ns
R1QDA7236ABG-22IB0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	1130 mA	2097152 words	SEPARATE		1.5/1.8,1.8	36	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	2MX36	2M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165	3			450 MHz		Not Qualified	75497472 bit						.81 Amp		.45 ns
R1QDA7236ABG-19IB0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	1280 mA	2097152 words	SEPARATE		1.5/1.8,1.8	36	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	2MX36	2M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165	3			533 MHz		Not Qualified	75497472 bit						.91 Amp		.45 ns
R1QDA7218ABG-20IB0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	1160 mA	4194304 words	SEPARATE		1.5/1.8,1.8	18	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	4MX18	4M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165	3			500 MHz		Not Qualified	75497472 bit						.83 Amp		.45 ns
R1QDA7218ABG-19IB0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	1220 mA	4194304 words	SEPARATE		1.5/1.8,1.8	18	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	4MX18	4M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165	3			533 MHz		Not Qualified	75497472 bit						.87 Amp		.45 ns
R1Q2A7209ABG-40IB0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	760 mA	8388608 words	SEPARATE		1.5/1.8,1.8	9	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	8MX9	8M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165	3			250 MHz		Not Qualified	75497472 bit								.45 ns
71V35761SA200BGGI	Integrated Device Technology	CACHE SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	GRID ARRAY				85 Cel		128KX36	128K		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119	3	3.465 V					4718592 bit	3.135 V	PIPELINED	e1		260			3.1 ns
71V35761S183BGGI8	Integrated Device Technology	CACHE SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	350 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	85 Cel	3-STATE	128KX36	128K	3.14 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	183 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e1	30	260	.035 Amp	22 mm	3.3 ns
71V35761S183BGGI	Integrated Device Technology	CACHE SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	350 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	85 Cel	3-STATE	128KX36	128K	3.14 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	183 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e1	30	260	.035 Amp	22 mm	3.3 ns
71V25761S183BGI8	Integrated Device Technology	CACHE SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	350 mA	131072 words	COMMON	3.3	2.5,3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	85 Cel	3-STATE	128KX36	128K	3.14 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	183 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e0	20	225	.035 Amp	22 mm	3.3 ns
71V3557S75BGI8	Integrated Device Technology	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	GRID ARRAY			1.27 mm	85 Cel		128KX36	128K		-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm		14 mm	Not Qualified	4718592 bit	3.135 V		e0	20	225		22 mm	7.5 ns
71V35761S183BGG8	Integrated Device Technology	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	340 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	128KX36	128K	3.14 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	183 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e1	30	260	.03 Amp	22 mm	3.3 ns
71V35761S183BGI8	Integrated Device Technology	CACHE SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	350 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	85 Cel	3-STATE	128KX36	128K	3.14 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	183 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e0	20	225	.035 Amp	22 mm	3.3 ns
DS2045W-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		131072 words		3.3		8	GRID ARRAY			1.27 mm	85 Cel		128KX8	128K		-40 Cel		BOTTOM		S-PBGA-B256		3.6 V	8.72 mm		27 mm	Not Qualified	1048576 bit	3 V			NOT SPECIFIED	NOT SPECIFIED		27 mm	100 ns
CYD36S36V18-200BGXC	Cypress Semiconductor	MULTI-PORT SRAM	COMMERCIAL	484	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	1500 mA	1048576 words	COMMON	1.5	1.5/1.8	36	GRID ARRAY	BGA484,22X22,40	SRAMs	1 mm	70 Cel	3-STATE	1MX36	1M	1.4 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B484	3	1.58 V	2.46 mm	200 MHz	27 mm	Not Qualified	37748736 bit	1.42 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V	e1	20	260	.59 Amp	27 mm	3.3 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.