LBGA SRAM 55

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
CYD18S36V18-167BBAI	Cypress Semiconductor	MULTI-PORT SRAM	INDUSTRIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	780 mA	524288 words	COMMON	1.5	1.5/1.8	36	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	85 Cel	3-STATE	512KX36	512K	1.4 V	-40 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B256	3	1.58 V	1.7 mm	167 MHz	17 mm	Not Qualified	18874368 bit	1.42 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V	e0				.35 Amp	17 mm	4 ns
CY7C1518KV18-250BZXC	Cypress Semiconductor	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	430 mA	4194304 words	COMMON	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	4MX18	4M	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	250 MHz	13 mm	Not Qualified	75497472 bit	1.7 V	PIPELINED ARCHITECTURE	e1	20	260			15 mm	.45 ns
CY7C1470BV25-200BZI	Cypress Semiconductor	ZBT SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	450 mA	2097152 words	COMMON	2.5	2.5	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	2MX36	2M	2.38 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B165	3	2.625 V	1.4 mm	200 MHz	15 mm	Not Qualified	75497472 bit	2.375 V	PIPELINED ARCHITECTURE	e0					17 mm	3 ns
UPD44644182AF5-E40-FQ1-A	Renesas Electronics	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	BALL	PARALLEL	SYNCHRONOUS	510 mA	4194304 words	COMMON	1.8	1.5/1.8,1.8	18	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	4MX18	4M	1.7 V	0 Cel		BOTTOM		R-PBGA-B165		1.9 V	1.46 mm	250 MHz	15 mm	Not Qualified	75497472 bit	1.7 V							17 mm	.45 ns
CY7C0853V-133BBC	Cypress Semiconductor	MULTI-PORT SRAM	COMMERCIAL	172	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	400 mA	262144 words	COMMON	3.3	3.3	36	GRID ARRAY, LOW PROFILE	BGA172,14X14,40	SRAMs	1 mm	70 Cel	3-STATE	256KX36	256K	3.14 V	0 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B172	3	3.465 V	1.25 mm	133 MHz	15 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e0		220		.075 Amp	15 mm	4.7 ns
CY7C1440AV33-167BZC	Cypress Semiconductor	CACHE SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		1048576 words		3.3		36	GRID ARRAY, LOW PROFILE			1 mm	70 Cel		1MX36	1M		0 Cel	TIN LEAD	BOTTOM		R-PBGA-B165	3	3.6 V	1.4 mm		15 mm	Not Qualified	37748736 bit	3.135 V	PIPELINED ARCHITECTURE	e0					17 mm	3.4 ns
CY7C1380KV33-167BZIT	Infineon Technologies	CACHE SRAM		165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	163 mA	524288 words	COMMON	3.3		36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		1 mm	85 Cel	3-STATE	512KX36	512K	3.135 V	-40 Cel		BOTTOM	1	R-PBGA-B165	3	3.6 V	1.4 mm	167 MHz	13 mm		18874368 bit	3.135 V	PIPELINED OPERATION				YES	.065 Amp	15 mm	3.4 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.