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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
7130LA100JI8	Integrated Device Technology	MULTI-PORT SRAM	INDUSTRIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	140 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	85 Cel	3-STATE	1KX8	1K	2 V	-40 Cel	TIN LEAD	QUAD	2	S-PQCC-J52	3					Not Qualified	8192 bit			e0	20	225		.004 Amp		100 ns
7130LA55PFI8	Integrated Device Technology	MULTI-PORT SRAM	INDUSTRIAL	64	QFP	SQUARE	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	140 mA	1024 words	COMMON	5	5	8	FLATPACK	QFP64,.66SQ,32	SRAMs	.8 mm	85 Cel	3-STATE	1KX8	1K	2 V	-40 Cel	TIN LEAD	QUAD	2	S-PQFP-G64	3					Not Qualified	8192 bit			e0	30	240		.004 Amp		55 ns
71321LA55JI8	Integrated Device Technology	MULTI-PORT SRAM	INDUSTRIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	140 mA	2048 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	85 Cel	3-STATE	2KX8	2K	2 V	-40 Cel	TIN LEAD	QUAD	2	S-PQCC-J52	3					Not Qualified	16384 bit			e0	20	225		.004 Amp		55 ns
71342SA35JI8	Integrated Device Technology	MULTI-PORT SRAM	INDUSTRIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	300 mA	4096 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	85 Cel	3-STATE	4KX8	4K	4.5 V	-40 Cel	TIN LEAD	QUAD	2	S-PQCC-J52	3	5.5 V				Not Qualified	32768 bit	4.5 V		e0	20	225		.015 Amp		35 ns
71342SA55PFI8	Integrated Device Technology	MULTI-PORT SRAM	INDUSTRIAL	64	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	270 mA	4096 words	COMMON	5	5	8	FLATPACK	QFP64,.66SQ,32	SRAMs	.8 mm	85 Cel	3-STATE	4KX8	4K	4.5 V	-40 Cel	TIN LEAD	QUAD	2	S-PQFP-G64	3	5.5 V				Not Qualified	32768 bit	4.5 V		e0				.015 Amp		55 ns
7134LA35JI8	Integrated Device Technology	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	250 mA	4096 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	4KX8	4K	2 V	0 Cel	TIN LEAD	QUAD	2	S-PQCC-J52	3					Not Qualified	32768 bit			e0	20	225		.004 Amp		35 ns
71421SA25PFI8	Integrated Device Technology	MULTI-PORT SRAM	INDUSTRIAL	64	QFP	SQUARE	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	270 mA	2048 words	COMMON	5	5	8	FLATPACK	QFP64,.66SQ,32	SRAMs	.8 mm	85 Cel	3-STATE	2KX8	2K	4.5 V	-40 Cel	TIN LEAD	QUAD	2	S-PQFP-G64	3					Not Qualified	16384 bit			e0	30	240		.03 Amp		25 ns
CY7C131-55JXCT	Cypress Semiconductor	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	110 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	1KX8	1K	4.5 V	0 Cel	Matte Tin (Sn)	QUAD	2	S-PQCC-J52	3	5.5 V	5.08 mm		19.1262 mm	Not Qualified	8192 bit	4.5 V	INTERRUPT FLAG	e3	20	260		.015 Amp	19.1262 mm	55 ns
7007L20PFGI8	Integrated Device Technology	MULTI-PORT SRAM	INDUSTRIAL	80	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	275 mA	32768 words	COMMON	5	5	8	FLATPACK	QFP80,.64SQ	SRAMs	.635 mm	85 Cel	3-STATE	32KX8	32K	4.5 V	-40 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G80	3	5.5 V				Not Qualified	262144 bit	4.5 V		e3	30	260		.01 Amp		20 ns
7024L55PFI	Integrated Device Technology	MULTI-PORT SRAM	INDUSTRIAL	100	QFP	SQUARE	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	250 mA	4096 words	COMMON	5	5	16	FLATPACK	QFP100,.63SQ,20	SRAMs	.5 mm	85 Cel	3-STATE	4KX16	4K	2 V	-40 Cel	TIN LEAD	QUAD	2	S-PQFP-G100	3					Not Qualified	65536 bit			e0	20	240		.004 Amp		55 ns
70V25S25PFI8	Integrated Device Technology	MULTI-PORT SRAM	INDUSTRIAL	100	QFP	SQUARE	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	190 mA	8192 words	COMMON	3.3	3.3	16	FLATPACK	QFP100,.63SQ,20	SRAMs	.5 mm	85 Cel	3-STATE	8KX16	8K	3 V	-40 Cel	Tin/Lead (Sn85Pb15)	QUAD	2	S-PQFP-G100	3					Not Qualified	131072 bit			e0	20	240		.015 Amp		25 ns
CY7C131E-15NXI	Cypress Semiconductor	MULTI-PORT SRAM	INDUSTRIAL	52	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	305 mA	1024 words	COMMON	5	5	8	FLATPACK	QFP52,.52SQ	SRAMs	.65 mm	85 Cel	3-STATE	1KX8	1K	4.5 V	-40 Cel	MATTE TIN	QUAD	2	S-PQFP-G52	3	5.5 V	2.5 mm		10 mm	Not Qualified	8192 bit	4.5 V		e3		260		.015 Amp	10 mm	15 ns
CY7C131E-55JXC	Cypress Semiconductor	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	275 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	1KX8	1K	4.5 V	0 Cel	MATTE TIN	QUAD	2	S-PQCC-J52	3	5.5 V	5.08 mm		19.1262 mm	Not Qualified	8192 bit	4.5 V		e3	20	260		.015 Amp	19.1262 mm	55 ns
CY7C136E-25JXC	Cypress Semiconductor	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	275 mA	2048 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	2KX8	2K	4.5 V	0 Cel	Matte Tin (Sn)	QUAD	2	S-PQCC-J52	3	5.5 V	5.08 mm		19.1262 mm	Not Qualified	16384 bit	4.5 V		e3	30	260		.015 Amp	19.1262 mm	25 ns
CY7C136E-25NXC	Cypress Semiconductor	MULTI-PORT SRAM	COMMERCIAL	52	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	275 mA	2048 words	COMMON	5	5	8	FLATPACK	QFP52,.52SQ	SRAMs	.65 mm	70 Cel	3-STATE	2KX8	2K	4.5 V	0 Cel	MATTE TIN	QUAD	2	S-PQFP-G52	3	5.5 V	2.5 mm		10 mm	Not Qualified	16384 bit	4.5 V		e3				.015 Amp	10 mm	25 ns
CYD18S36V18-167BBAI	Cypress Semiconductor	MULTI-PORT SRAM	INDUSTRIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	780 mA	524288 words	COMMON	1.5	1.5/1.8	36	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	85 Cel	3-STATE	512KX36	512K	1.4 V	-40 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B256	3	1.58 V	1.7 mm	167 MHz	17 mm	Not Qualified	18874368 bit	1.42 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V	e0				.35 Amp	17 mm	4 ns
SN74ACT2152A-20FN	Texas Instruments	CACHE TAG SRAM	COMMERCIAL	28	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	125 mA	2048 words		5	5	8	CHIP CARRIER	LDCC28,.5SQ	SRAMs	1.27 mm	70 Cel	3-STATE	2KX8	2K		0 Cel		QUAD	1	S-PQCC-J28		5.5 V	4.57 mm		11.5062 mm	Not Qualified	16384 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	NO		11.5062 mm	20 ns
SNJ54LS670FK	Texas Instruments	STANDARD SRAM	MILITARY	20	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	TTL	MIL-PRF-38535	NO LEAD	PARALLEL	ASYNCHRONOUS		4 words		5	5	4	CHIP CARRIER	LCC20,.35SQ	Other Memory ICs	1.27 mm	125 Cel	3-STATE	4X4	4		-55 Cel	TIN LEAD	QUAD	1	S-CQCC-N20		5.25 V	2.03 mm	35 MHz	8.89 mm	Not Qualified	16 bit	4.75 V		e0			NO	.05 Amp	8.89 mm	45 ns
CY7C131-25JC	Cypress Semiconductor	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	170 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	1KX8	1K	4.5 V	0 Cel	TIN LEAD	QUAD	2	S-PQCC-J52	3	5.5 V	5.08 mm		19.1262 mm	Not Qualified	8192 bit	4.5 V	INTERRUPT FLAG	e0			YES	.015 Amp	19.1262 mm	25 ns
CY7C09099V-12AC	Cypress Semiconductor	MULTI-PORT SRAM	COMMERCIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	205 mA	131072 words	COMMON	3.3	3.3	8	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20	SRAMs	.5 mm	70 Cel	3-STATE	128KX8	128K	3 V	0 Cel	TIN LEAD	QUAD	2	S-PQFP-G100	3	3.6 V	1.6 mm	50 MHz	14 mm	Not Qualified	1048576 bit	3 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e0				.00025 Amp	14 mm	25 ns
CY7C024AV-25AC	Cypress Semiconductor	MULTI-PORT SRAM	COMMERCIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	165 mA	4096 words	COMMON	3.3	3.3	16	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20	SRAMs	.5 mm	70 Cel	3-STATE	4KX16	4K	2 V	0 Cel	TIN LEAD	QUAD	2	S-PQFP-G100	3	3.6 V	1.6 mm		14 mm	Not Qualified	65536 bit	3 V		e0				.00005 Amp	14 mm	25 ns
CY7C09349A-12AC	Cypress Semiconductor	MULTI-PORT SRAM	COMMERCIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	300 mA	4096 words	COMMON	5	5	18	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20	SRAMs	.5 mm	70 Cel	3-STATE	4KX18	4K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD	2	S-PQFP-G100		5.5 V	1.6 mm		14 mm	Not Qualified	73728 bit	4.5 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e0				.0005 Amp	14 mm	25 ns
7008L20JI8	Integrated Device Technology	MULTI-PORT SRAM	INDUSTRIAL	84	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	335 mA	65536 words	COMMON	5	5	8	CHIP CARRIER	LDCC84,1.2SQ	SRAMs	1.27 mm	85 Cel	3-STATE	64KX8	64K	4.5 V	-40 Cel	TIN LEAD	QUAD	2	S-PQCC-J84	1	5.5 V	4.57 mm		29.3116 mm	Not Qualified	524288 bit	4.5 V	INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN; LOW POWER STANDBY MODE	e0	30	225		.01 Amp	29.3116 mm	20 ns
7008L20PFI8	Integrated Device Technology	MULTI-PORT SRAM	INDUSTRIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	335 mA	65536 words	COMMON	5	5	8	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20	SRAMs	.5 mm	85 Cel	3-STATE	64KX8	64K	4.5 V	-40 Cel	TIN LEAD	QUAD	2	S-PQFP-G100	3	5.5 V	1.6 mm		14 mm	Not Qualified	524288 bit	4.5 V	INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN; LOW POWER STANDBY MODE	e0	20	240		.01 Amp	14 mm	20 ns
7008S55PFI8	Integrated Device Technology	MULTI-PORT SRAM	INDUSTRIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	310 mA	65536 words	COMMON	5	5	8	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20	SRAMs	.5 mm	85 Cel	3-STATE	64KX8	64K	4.5 V	-40 Cel	TIN LEAD	QUAD	2	S-PQFP-G100	3	5.5 V	1.6 mm		14 mm	Not Qualified	524288 bit	4.5 V	INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN; LOW POWER STANDBY MODE	e0	20	240		.03 Amp	14 mm	55 ns
7024L55PF8	Integrated Device Technology	MULTI-PORT SRAM	COMMERCIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	210 mA	4096 words	COMMON	5	5	16	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20	SRAMs	.5 mm	70 Cel	3-STATE	4KX16	4K	2 V	0 Cel	TIN LEAD	QUAD	2	S-PQFP-G100	3	5.5 V	1.6 mm		14 mm	Not Qualified	65536 bit	4.5 V	INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN	e0	20	240		.0015 Amp	14 mm	55 ns
7025S20PF8	Integrated Device Technology	MULTI-PORT SRAM	COMMERCIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	290 mA	8192 words	COMMON	5	5	16	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20	SRAMs	.5 mm	70 Cel	3-STATE	8KX16	8K	4.5 V	0 Cel	TIN LEAD	QUAD	2	S-PQFP-G100	3	5.5 V	1.6 mm		14 mm	Not Qualified	131072 bit	4.5 V	INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE	e0	20	240		.015 Amp	14 mm	20 ns
7025S25PF8	Integrated Device Technology	MULTI-PORT SRAM	COMMERCIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	265 mA	8192 words	COMMON	5	5	16	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20	SRAMs	.5 mm	70 Cel	3-STATE	8KX16	8K	4.5 V	0 Cel	TIN LEAD	QUAD	2	S-PQFP-G100	3	5.5 V	1.6 mm		14 mm	Not Qualified	131072 bit	4.5 V	INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE	e0	20	240		.015 Amp	14 mm	25 ns
709289L9PFI	Integrated Device Technology	MULTI-PORT SRAM	INDUSTRIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	430 mA	65536 words	COMMON	5	5	16	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20	SRAMs	.5 mm	85 Cel	3-STATE	64KX16	64K	4.5 V	-40 Cel	TIN LEAD	QUAD	2	S-PQFP-G100	3	5.5 V	1.6 mm	66 MHz	14 mm	Not Qualified	1048576 bit	4.5 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e0	20	240		.006 Amp	14 mm	20 ns
70V261L25PFI8	Integrated Device Technology	MULTI-PORT SRAM	INDUSTRIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	185 mA	16384 words	COMMON	3.3	3.3	16	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20	SRAMs	.5 mm	85 Cel	3-STATE	16KX16	16K	3 V	-40 Cel	TIN LEAD	QUAD	2	S-PQFP-G100	3	3.6 V	1.6 mm		14 mm	Not Qualified	262144 bit	3 V	INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN	e0	20	240		.003 Amp	14 mm	25 ns
70V26L25JI8	Integrated Device Technology	MULTI-PORT SRAM	INDUSTRIAL	84	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	185 mA	16384 words	COMMON	3.3	3.3	16	CHIP CARRIER	LDCC84,1.2SQ	SRAMs	1.27 mm	85 Cel	3-STATE	16KX16	16K	3 V	-40 Cel	TIN LEAD	QUAD	2	S-PQCC-J84	1	3.6 V	4.572 mm		29.2862 mm	Not Qualified	262144 bit	3 V		e0	30	225		.003 Amp	29.2862 mm	25 ns
70V27L20PFI8	Integrated Device Technology	MULTI-PORT SRAM	INDUSTRIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	230 mA	32768 words	COMMON	3.3	3.3	16	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20	SRAMs	.5 mm	85 Cel	3-STATE	32KX16	32K	3 V	-40 Cel	TIN LEAD	QUAD	2	S-PQFP-G100	3	3.6 V	1.6 mm		14 mm	Not Qualified	524288 bit	3 V		e0	20	240		.006 Amp	14 mm	20 ns
70V27L35PFI8	Integrated Device Technology	MULTI-PORT SRAM	INDUSTRIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	235 mA	32768 words	COMMON	3.3	3.3	16	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20	SRAMs	.5 mm	85 Cel	3-STATE	32KX16	32K	3 V	-40 Cel	TIN LEAD	QUAD	2	S-PQFP-G100	3	3.6 V	1.6 mm		14 mm	Not Qualified	524288 bit	3 V	INTERRUPT FLAGS	e0	20	240		.006 Amp	14 mm	35 ns
70V37L20PFI8	Integrated Device Technology	MULTI-PORT SRAM	INDUSTRIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	220 mA	32768 words	COMMON	3.3	3.3	18	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20	SRAMs	.5 mm	85 Cel	3-STATE	32KX18	32K	3 V	-40 Cel	TIN LEAD	QUAD	2	S-PQFP-G100	3	3.6 V	1.6 mm		14 mm	Not Qualified	589824 bit	3 V	INTERRUPT FLAG	e0	20	240		.003 Amp	14 mm	20 ns
70V38L20PFI8	Integrated Device Technology	MULTI-PORT SRAM	INDUSTRIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	220 mA	65536 words	COMMON	3.3	3.3	18	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20	SRAMs	.5 mm	85 Cel	3-STATE	64KX18	64K	3 V	-40 Cel	TIN LEAD	QUAD	2	S-PQFP-G100	3	3.6 V	1.6 mm		14 mm	Not Qualified	1179648 bit	3 V		e0	20	240		.003 Amp	14 mm	20 ns
7130SA100PF8	Integrated Device Technology	MULTI-PORT SRAM	COMMERCIAL	64	LQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	155 mA	1024 words	COMMON	5	5	8	FLATPACK, LOW PROFILE	QFP64,.66SQ,32	SRAMs	.8 mm	70 Cel	3-STATE	1KX8	1K	4.5 V	0 Cel	TIN LEAD	QUAD	2	S-PQFP-G64	3	5.5 V	1.6 mm		14 mm	Not Qualified	8192 bit	4.5 V		e0	30	240		.015 Amp	14 mm	100 ns
7130SA55PF8	Integrated Device Technology	MULTI-PORT SRAM	COMMERCIAL	64	LQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	155 mA	1024 words	COMMON	5	5	8	FLATPACK, LOW PROFILE	QFP64,.66SQ,32	SRAMs	.8 mm	70 Cel	3-STATE	1KX8	1K	4.5 V	0 Cel	TIN LEAD	QUAD	2	S-PQFP-G64	3	5.5 V	1.6 mm		14 mm	Not Qualified	8192 bit	4.5 V		e0	30	240		.015 Amp	14 mm	55 ns
7130SA55PFI8	Integrated Device Technology	MULTI-PORT SRAM	INDUSTRIAL	64	LQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	190 mA	1024 words	COMMON	5	5	8	FLATPACK, LOW PROFILE	QFP64,.66SQ,32	SRAMs	.8 mm	85 Cel	3-STATE	1KX8	1K	4.5 V	-40 Cel	TIN LEAD	QUAD	2	S-PQFP-G64	3	5.5 V	1.6 mm		14 mm	Not Qualified	8192 bit	4.5 V		e0	30	240		.03 Amp	14 mm	55 ns
71321SA55JI8	Integrated Device Technology	MULTI-PORT SRAM	INDUSTRIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	190 mA	2048 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	85 Cel	3-STATE	2KX8	2K	4.5 V	-40 Cel	TIN LEAD	QUAD	2	S-PQCC-J52	3	5.5 V	4.572 mm		19.1262 mm	Not Qualified	16384 bit	4.5 V	INTERRUPT FLAG; AUTOMATIC POWER-DOWN	e0	20	225		.03 Amp	19.1262 mm	55 ns
7133LA25PFI8	Integrated Device Technology	MULTI-PORT SRAM	INDUSTRIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	300 mA	2048 words	COMMON	5	5	16	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20	SRAMs	.5 mm	85 Cel	3-STATE	2KX16	2K	2 V	-40 Cel	TIN LEAD	QUAD	2	S-PQFP-G100	3	5.5 V	1.6 mm		14 mm	Not Qualified	32768 bit	4.5 V		e0	20	240		.004 Amp	14 mm	25 ns
71342LA20J8	Integrated Device Technology	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	240 mA	4096 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	4KX8	4K	2 V	0 Cel	TIN LEAD	QUAD	2	S-PQCC-J52	3	5.5 V	4.57 mm		19.1262 mm	Not Qualified	32768 bit	4.5 V	SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP	e0	20	225		.0015 Amp	19.1262 mm	20 ns
71342LA20PF8	Integrated Device Technology	MULTI-PORT SRAM	COMMERCIAL	64	LQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	240 mA	4096 words	COMMON	5	5	8	FLATPACK, LOW PROFILE	QFP64,.66SQ,32	SRAMs	.8 mm	70 Cel	3-STATE	4KX8	4K	2 V	0 Cel	TIN LEAD	QUAD	2	S-PQFP-G64	3	5.5 V	1.6 mm		14 mm	Not Qualified	32768 bit	4.5 V	SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP	e0	30	240		.0015 Amp	14 mm	20 ns
71342LA25J8	Integrated Device Technology	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	240 mA	4096 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	4KX8	4K	2 V	0 Cel	TIN LEAD	QUAD	2	S-PQCC-J52	3	5.5 V	4.57 mm		19.1262 mm	Not Qualified	32768 bit	4.5 V	SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP	e0	20	225		.0015 Amp	19.1262 mm	25 ns
71342LA25JI8	Integrated Device Technology	MULTI-PORT SRAM	INDUSTRIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	260 mA	4096 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	85 Cel	3-STATE	4KX8	4K	2 V	-40 Cel	TIN LEAD	QUAD	2	S-PQCC-J52	3	5.5 V	4.57 mm		19.1262 mm	Not Qualified	32768 bit	4.5 V		e0	20	225		.0015 Amp	19.1262 mm	25 ns
71342LA25PF8	Integrated Device Technology	MULTI-PORT SRAM	COMMERCIAL	64	LQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	240 mA	4096 words	COMMON	5	5	8	FLATPACK, LOW PROFILE	QFP64,.66SQ,32	SRAMs	.8 mm	70 Cel	3-STATE	4KX8	4K	2 V	0 Cel	TIN LEAD	QUAD	2	S-PQFP-G64	3	5.5 V	1.6 mm		14 mm	Not Qualified	32768 bit	4.5 V	SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP	e0	30	240		.0015 Amp	14 mm	25 ns
71342LA25PFI8	Integrated Device Technology	MULTI-PORT SRAM	INDUSTRIAL	64	LQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	260 mA	4096 words	COMMON	5	5	8	FLATPACK, LOW PROFILE	QFP64,.66SQ,32	SRAMs	.8 mm	85 Cel	3-STATE	4KX8	4K	2 V	-40 Cel	TIN LEAD	QUAD	2	S-PQFP-G64	3	5.5 V	1.6 mm		14 mm	Not Qualified	32768 bit	4.5 V		e0	30	240		.0015 Amp	14 mm	25 ns
71342LA35J8	Integrated Device Technology	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	220 mA	4096 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	4KX8	4K	2 V	0 Cel	TIN LEAD	QUAD	2	S-PQCC-J52	3	5.5 V	4.57 mm		19.1262 mm	Not Qualified	32768 bit	4.5 V	SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP	e0	20	225		.0015 Amp	19.1262 mm	35 ns
71342LA35PF8	Integrated Device Technology	MULTI-PORT SRAM	COMMERCIAL	64	LQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	220 mA	4096 words	COMMON	5	5	8	FLATPACK, LOW PROFILE	QFP64,.66SQ,32	SRAMs	.8 mm	70 Cel	3-STATE	4KX8	4K	2 V	0 Cel	TIN LEAD	QUAD	2	S-PQFP-G64	3	5.5 V	1.6 mm		14 mm	Not Qualified	32768 bit	4.5 V	SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP	e0	30	240		.0015 Amp	14 mm	35 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.