AUTOMOTIVE SRAM 20

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
CY7C1021BN-15VXET	Cypress Semiconductor	STANDARD SRAM	AUTOMOTIVE	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	J BEND	PARALLEL	ASYNCHRONOUS	130 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE	SOJ44,.44	SRAMs	1.27 mm	125 Cel	3-STATE	64KX16	64K	4.5 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-J44	3	5.5 V	3.7592 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V	e4				.015 Amp	28.575 mm	15 ns
CY7C1021BN-15ZSXET	Cypress Semiconductor	STANDARD SRAM	AUTOMOTIVE	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	130 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	125 Cel	3-STATE	64KX16	64K	4.5 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G44	3	5.5 V	1.194 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V	e4	20	260		.015 Amp	18.415 mm	15 ns
CY7C1041CV33-12ZSXE	Cypress Semiconductor	STANDARD SRAM	AUTOMOTIVE	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	120 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	125 Cel	3-STATE	256KX16	256K		-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL		R-PDSO-G44	3	3.6 V	1.194 mm		10.16 mm	Not Qualified	4194304 bit	3 V	e4	20	260			18.415 mm	12 ns
CY7C1020CV33-15ZSXET	Cypress Semiconductor	STANDARD SRAM	AUTOMOTIVE	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	85 mA	32768 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	125 Cel	3-STATE	32KX16	32K	3 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G44	3	3.63 V	1.194 mm		10.16 mm	Not Qualified	524288 bit	2.97 V	e4	20	260		.01 Amp	18.415 mm	15 ns
74HC670D,653	NXP Semiconductors	STANDARD SRAM	AUTOMOTIVE	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		4 words		5		4	SMALL OUTLINE			1.27 mm	125 Cel	3-STATE	4X4	4		-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL	1	R-PDSO-G16	1	6 V	1.75 mm		3.9 mm	Not Qualified	16 bit	2 V	e4	30	260	NO		9.9 mm	59 ns
74HC670DB,112	NXP Semiconductors	STANDARD SRAM	AUTOMOTIVE	16	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		4 words		5	2/6	4	SMALL OUTLINE, SHRINK PITCH	SSOP16,.3	Other Memory ICs	.65 mm	125 Cel		4X4	4		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G16	1	6 V	2 mm		5.3 mm	Not Qualified	16 bit	2 V	e4					6.2 mm	59 ns
74HC670DB,118	NXP Semiconductors	STANDARD SRAM	AUTOMOTIVE	16	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		4 words		5		4	SMALL OUTLINE, SHRINK PITCH			.65 mm	125 Cel		4X4	4		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G16	1	6 V	2 mm		5.3 mm	Not Qualified	16 bit	2 V	e4					6.2 mm	59 ns
74HC670N,652	NXP Semiconductors	STANDARD SRAM	AUTOMOTIVE	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4 words		5	2/6	4	IN-LINE	DIP16,.3	Other Memory ICs	2.54 mm	125 Cel	3-STATE	4X4	4		-40 Cel	NICKEL PALLADIUM GOLD	DUAL	1	R-PDIP-T16		6 V	4.7 mm		7.62 mm	Not Qualified	16 bit	2 V	e4			NO		21.6 mm	59 ns
74HCT670D,652	NXP Semiconductors	STANDARD SRAM	AUTOMOTIVE	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		4 words		5	5	4	SMALL OUTLINE	SOP16,.25	Other Memory ICs	1.27 mm	125 Cel	3-STATE	4X4	4		-40 Cel	NICKEL PALLADIUM GOLD	DUAL	1	R-PDSO-G16	1	5.5 V	1.75 mm		3.9 mm	Not Qualified	16 bit	4.5 V	e4			NO		9.9 mm	60 ns
74HCT670D,653	NXP Semiconductors	STANDARD SRAM	AUTOMOTIVE	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		4 words		5		4	SMALL OUTLINE			1.27 mm	125 Cel	3-STATE	4X4	4		-40 Cel	NICKEL PALLADIUM GOLD	DUAL	1	R-PDSO-G16	1	5.5 V	1.75 mm		3.9 mm	Not Qualified	16 bit	4.5 V	e4			NO		9.9 mm	60 ns
23K640-E/P	Microchip Technology	STANDARD SRAM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	TS 16949	THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	8192 words	SEPARATE	3	3/3.3	8	IN-LINE	DIP8,.3	SRAMs	2.54 mm	125 Cel	3-STATE	8KX8	8K	2.7 V	-40 Cel	MATTE TIN	DUAL	1	R-PDIP-T8		3.6 V	5.334 mm	16 MHz	7.62 mm	Not Qualified	65536 bit	2.7 V	e3			NO	.00001 Amp	9.271 mm
23K640-E/ST	Microchip Technology	STANDARD SRAM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	10 mA	8192 words	SEPARATE	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	SRAMs	.65 mm	125 Cel	3-STATE	8KX8	8K	2.7 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	3.6 V	1.2 mm	16 MHz	3 mm	Not Qualified	65536 bit	2.7 V	e3	40	260	NO	.00001 Amp	4.4 mm
23K640T-E/ST	Microchip Technology	STANDARD SRAM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	10 mA	8192 words	SEPARATE	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	SRAMs	.65 mm	125 Cel	3-STATE	8KX8	8K	2.7 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	3.6 V	1.2 mm	16 MHz	3 mm	Not Qualified	65536 bit	2.7 V	e3	40	260	NO	.00001 Amp	4.4 mm
CY7C1041CV33-20ZSXE	Cypress Semiconductor	STANDARD SRAM	AUTOMOTIVE	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	75 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	125 Cel	3-STATE	256KX16	256K	3 V	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL		R-PDSO-G44	3	3.6 V	1.194 mm		10.16 mm	Not Qualified	4194304 bit	3 V	e4	20	260		.015 Amp	18.415 mm	20 ns
IS64C6416AL-15TLA3	Integrated Silicon Solution	STANDARD SRAM	AUTOMOTIVE	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	125 Cel	3-STATE	64KX16	64K	2 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-G44		5.5 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V	e3	10	260		.000125 Amp	18.415 mm	15 ns
IS64WV102416BLL-10MA3	Integrated Silicon Solution	STANDARD SRAM	AUTOMOTIVE	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	140 mA	1048576 words	COMMON	3.3	2.5/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	125 Cel	3-STATE	1MX16	1M	1.2 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B48	3	3.6 V	1.2 mm		9 mm	Not Qualified	16777216 bit	2.4 V	e0				.05 Amp	11 mm	10 ns
CY7C1021BN-15VXE	Cypress Semiconductor	STANDARD SRAM	AUTOMOTIVE	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	J BEND	PARALLEL	ASYNCHRONOUS	130 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE	SOJ44,.44	SRAMs	1.27 mm	125 Cel	3-STATE	64KX16	64K	4.5 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-J44	3	5.5 V	3.7592 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V	e4	40	260		.015 Amp	28.575 mm	15 ns
23LC1024T-E/SN	Microchip Technology	STANDARD SRAM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	10 mA	131072 words	COMMON/SEPARATE	5	3/5	8	SMALL OUTLINE	SOP8,.23	SRAMs	1.27 mm	125 Cel	3-STATE	128KX8	128K	2.5 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	5.5 V	1.75 mm	16 MHz	3.9 mm	Not Qualified	1048576 bit	2.5 V	e3		260	NO	.00002 Amp	4.9 mm
IS64WV204816BLL-12CTLA3	Integrated Silicon Solution	STANDARD SRAM	AUTOMOTIVE	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		2097152 words		3		16	SMALL OUTLINE, THIN PROFILE			.5 mm	125 Cel		2MX16	2M		-40 Cel		DUAL		R-PDSO-G48		3.6 V	1.2 mm		12 mm		33554432 bit	2.4 V		NOT SPECIFIED	NOT SPECIFIED			18.4 mm	12 ns
IS64WV102416BLL-10MLA3-TR	Integrated Silicon Solution	STANDARD SRAM	AUTOMOTIVE	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		1048576 words		3.3		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	125 Cel		1MX16	1M		-40 Cel		BOTTOM		R-PBGA-B48		3.6 V	1.2 mm		9 mm		16777216 bit	2.4 V						11 mm	10 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.