COMMERCIAL SRAM 178

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
TMS62828L-85NW	Texas Instruments	STANDARD SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	2 V		DUAL		R-PDIP-T32						Not Qualified	1048576 bit						.00005 Amp		85 ns
UPD44645092AF5-E40-FQ1-A	Renesas Electronics	STANDARD SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS		8388608 words	SEPARATE		1.5/1.8,1.8	9	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	8MX9	8M	1.7 V		BOTTOM		R-PBGA-B165				250 MHz		Not Qualified	75497472 bit								.45 ns
UPD44645362AF5-E40-FQ1-A	Renesas Electronics	STANDARD SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	740 mA	2097152 words	SEPARATE		1.5/1.8,1.8	36	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	2MX36	2M	1.7 V		BOTTOM		R-PBGA-B165				250 MHz		Not Qualified	75497472 bit								.45 ns
UPD44645362AF5-E50-FQ1-A	Renesas Electronics	STANDARD SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	650 mA	2097152 words	SEPARATE		1.5/1.8,1.8	36	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	2MX36	2M	1.7 V		BOTTOM		R-PBGA-B165				200 MHz		Not Qualified	75497472 bit								.45 ns
UPD44645094AF5-E40-FQ1-A	Renesas Electronics	STANDARD SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	470 mA	8388608 words	SEPARATE		1.5/1.8,1.8	9	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	8MX9	8M	1.7 V		BOTTOM		R-PBGA-B165				250 MHz		Not Qualified	75497472 bit						.35 Amp		.45 ns
UPD44645364AF5-E40-FQ1-A	Renesas Electronics	STANDARD SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	580 mA	2097152 words	SEPARATE		1.5/1.8,1.8	36	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	2MX36	2M	1.7 V		BOTTOM		R-PBGA-B165				250 MHz		Not Qualified	75497472 bit								.45 ns
UPD44645364AF5-E50-FQ1-A	Renesas Electronics	STANDARD SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	510 mA	2097152 words	SEPARATE		1.5/1.8,1.8	36	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	2MX36	2M	1.7 V		BOTTOM		R-PBGA-B165				200 MHz		Not Qualified	75497472 bit								.45 ns
IS61DDB251236A-250M3L	Integrated Silicon Solution	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	550 mA	524288 words	COMMON	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	512KX36	512K	1.7 V	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.89 V	1.4 mm	250 MHz	15 mm	Not Qualified	18874368 bit	1.71 V	PIPELINED ARCHITECTURE	e1			.27 Amp	17 mm	.45 ns
IS61QDB251236A-250M3L	Integrated Silicon Solution	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	1000 mA	524288 words	SEPARATE	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	512KX36	512K	1.7 V	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.89 V	1.4 mm	250 MHz	15 mm	Not Qualified	18874368 bit	1.71 V	PIPELINED ARCHITECTURE	e1			.27 Amp	17 mm	.45 ns
UPD44164184BF5-E40-EQ3-A	Renesas Electronics	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	400 mA	1048576 words	COMMON	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	1MX18	1M	1.7 V		BOTTOM		R-PBGA-B165		1.9 V	1.46 mm	250 MHz	13 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE				.38 Amp	15 mm	.45 ns
UPD44165362BF5-E50-EQ3-A	Renesas Electronics	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	590 mA	524288 words	SEPARATE	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	512KX36	512K	1.7 V		BOTTOM		R-PBGA-B165		1.9 V	1.46 mm	200 MHz	13 mm	Not Qualified	18874368 bit	1.7 V					.32 Amp	15 mm	.45 ns
UPD44324182BF5-E33-FQ1-A	Renesas Electronics	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	470 mA	2097152 words	COMMON	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	2MX18	2M	1.7 V		BOTTOM		R-PBGA-B165		1.9 V	1.46 mm	300 MHz	15 mm	Not Qualified	37748736 bit	1.7 V	PIPELINED ARCHITECTURE				.41 Amp	17 mm	.45 ns
UPD44325094BF5-E33-FQ1-A	Renesas Electronics	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	520 mA	4194304 words	SEPARATE	1.8	1.5/1.8,1.8	9	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	4MX9	4M	1.7 V		BOTTOM		R-PBGA-B165		1.9 V	1.46 mm	300 MHz	15 mm	Not Qualified	37748736 bit	1.7 V					.39 Amp	17 mm	.45 ns
UPD44325362BF5-E50-FQ1-A	Renesas Electronics	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	590 mA	1048576 words	SEPARATE	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	1MX36	1M	1.7 V		BOTTOM		R-PBGA-B165		1.9 V	1.46 mm	200 MHz	15 mm	Not Qualified	37748736 bit	1.7 V					.32 Amp	17 mm	.45 ns
UPD44324182BF5-E40-FQ1	Renesas Electronics	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	430 mA	2097152 words	COMMON	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	2MX18	2M	1.4 V		BOTTOM		R-PBGA-B165		1.9 V	1.46 mm	250 MHz	15 mm	Not Qualified	37748736 bit	1.7 V	PIPELINED ARCHITECTURE				.38 Amp	17 mm	.45 ns
UPD44325092BF5-E40-FQ1	Renesas Electronics	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	510 mA	4194304 words	SEPARATE	1.8	1.5/1.8,1.8	9	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	4MX9	4M	1.7 V		BOTTOM		R-PBGA-B165		1.9 V	1.46 mm	250 MHz	15 mm	Not Qualified	37748736 bit	1.7 V					.3 Amp	17 mm	.45 ns
UPD44325182BF5-E40-FQ1	Renesas Electronics	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	610 mA	2097152 words	SEPARATE	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	2MX18	2M	1.7 V	TIN LEAD	BOTTOM		R-PBGA-B165		1.9 V	1.46 mm	250 MHz	15 mm	Not Qualified	37748736 bit	1.7 V		e0			.31 Amp	17 mm	.45 ns
UPD44165182BF5-E33-EQ3	Renesas Electronics	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		1048576 words		1.8		18	GRID ARRAY, LOW PROFILE			1 mm	70 Cel		1MX18	1M			BOTTOM		R-PBGA-B165		1.9 V	1.46 mm		13 mm		18874368 bit	1.7 V						15 mm	.45 ns
UPD44165184BF5-E33-EQ3	Renesas Electronics	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		1048576 words		1.8		18	GRID ARRAY, LOW PROFILE			1 mm	70 Cel		1MX18	1M			BOTTOM		R-PBGA-B165		1.9 V	1.46 mm		13 mm		18874368 bit	1.7 V						15 mm	.45 ns
UPD44165364BF5-E40-EQ3	Renesas Electronics	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		1.8		36	GRID ARRAY, LOW PROFILE			1 mm	70 Cel		512KX36	512K			BOTTOM		R-PBGA-B165		1.9 V	1.46 mm		13 mm		18874368 bit	1.7 V						15 mm	.45 ns
UPD44645182AF5-E40-FQ1-A	Renesas Electronics	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	630 mA	4194304 words	SEPARATE	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	4MX18	4M	1.7 V	TIN SILVER COPPER	BOTTOM		R-PBGA-B165		1.9 V	1.46 mm	250 MHz	15 mm	Not Qualified	75497472 bit	1.7 V		e1				17 mm	.45 ns
CY7C1665KV18-450BZXC	Cypress Semiconductor	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	1290 mA	4194304 words	SEPARATE	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	4MX36	4M	1.7 V		BOTTOM		R-PBGA-B165		1.9 V	1.4 mm	450 MHz	15 mm	Not Qualified	150994944 bit	1.7 V					.46 Amp	17 mm	.45 ns
7134LA35JI8	Integrated Device Technology	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	250 mA	4096 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	4KX8	4K	2 V	TIN LEAD	QUAD	2	S-PQCC-J52	3					Not Qualified	32768 bit			e0	20	225	.004 Amp		35 ns
CY7C131-55JXCT	Cypress Semiconductor	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	110 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	1KX8	1K	4.5 V	Matte Tin (Sn)	QUAD	2	S-PQCC-J52	3	5.5 V	5.08 mm		19.1262 mm	Not Qualified	8192 bit	4.5 V	INTERRUPT FLAG	e3	20	260	.015 Amp	19.1262 mm	55 ns
CY7C1380D-167AXCT	Cypress Semiconductor	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	275 mA	524288 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	512KX36	512K		MATTE TIN	QUAD		R-PQFP-G100	3	3.6 V	1.6 mm	167 MHz	14 mm	Not Qualified	18874368 bit	3.135 V	PIPELINED ARCHITECTURE	e3	40	260	.07 Amp	20 mm	3.4 ns
CY7C1061AV33-10ZXCT	Cypress Semiconductor	STANDARD SRAM	COMMERCIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	275 mA	1048576 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	SRAMs	.8 mm	70 Cel	3-STATE	1MX16	1M	2 V	Matte Tin (Sn)	DUAL		R-PDSO-G54	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	3 V		e3	20	260	.05 Amp	22.415 mm	10 ns
CY7C1347G-133AXCT	Cypress Semiconductor	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	225 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	128KX36	128K	3.14 V	MATTE TIN	QUAD		R-PQFP-G100	3	3.63 V	1.6 mm	133 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e3	40	260	.04 Amp	20 mm	4 ns
CY7C131E-55JXC	Cypress Semiconductor	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	275 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	1KX8	1K	4.5 V	MATTE TIN	QUAD	2	S-PQCC-J52	3	5.5 V	5.08 mm		19.1262 mm	Not Qualified	8192 bit	4.5 V		e3	20	260	.015 Amp	19.1262 mm	55 ns
CY7C136E-25JXC	Cypress Semiconductor	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	275 mA	2048 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	2KX8	2K	4.5 V	Matte Tin (Sn)	QUAD	2	S-PQCC-J52	3	5.5 V	5.08 mm		19.1262 mm	Not Qualified	16384 bit	4.5 V		e3	30	260	.015 Amp	19.1262 mm	25 ns
CY7C136E-25NXC	Cypress Semiconductor	MULTI-PORT SRAM	COMMERCIAL	52	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	275 mA	2048 words	COMMON	5	5	8	FLATPACK	QFP52,.52SQ	SRAMs	.65 mm	70 Cel	3-STATE	2KX8	2K	4.5 V	MATTE TIN	QUAD	2	S-PQFP-G52	3	5.5 V	2.5 mm		10 mm	Not Qualified	16384 bit	4.5 V		e3			.015 Amp	10 mm	25 ns
UPD46184182BF1-E40-EQ1	Renesas Electronics	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	430 mA	1048576 words	COMMON	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	1MX18	1M	1.7 V		BOTTOM		R-PBGA-B165		1.9 V	1.46 mm	250 MHz	13 mm	Not Qualified	18874368 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED	.38 Amp	15 mm	.45 ns
UPD46184184BF1-E40-EQ1-A	Renesas Electronics	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	400 mA	1048576 words	COMMON	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	1MX18	1M	1.7 V	TIN BISMUTH	BOTTOM		R-PBGA-B165		1.9 V	1.46 mm	250 MHz	13 mm	Not Qualified	18874368 bit	1.7 V		e6			.38 Amp	15 mm	.45 ns
UPD46184185BF1-E40-EQ1-A	Renesas Electronics	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	480 mA	1048576 words	SEPARATE	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	1MX18	1M	1.7 V	TIN BISMUTH	BOTTOM		R-PBGA-B165		1.9 V	1.46 mm	250 MHz	13 mm	Not Qualified	18874368 bit	1.7 V		e6			.38 Amp	15 mm	.45 ns
UPD46184362BF1-E33-EQ1-A	Renesas Electronics	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	510 mA	524288 words	COMMON	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	512KX36	512K	1.7 V	TIN BISMUTH	BOTTOM		R-PBGA-B165		1.9 V	1.46 mm	300 MHz	13 mm	Not Qualified	18874368 bit	1.7 V		e6			.43 Amp	15 mm	.45 ns
UPD46184362BF1-E40-EQ1-A	Renesas Electronics	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		1.8		36	GRID ARRAY, LOW PROFILE			1 mm	70 Cel		512KX36	512K		TIN BISMUTH	BOTTOM		R-PBGA-B165		1.9 V	1.46 mm		13 mm		18874368 bit	1.7 V		e6				15 mm	.45 ns
UPD46185092BF1-E40-EQ1-A	Renesas Electronics	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		2097152 words		1.8		9	GRID ARRAY, LOW PROFILE			1 mm	70 Cel		2MX9	2M		TIN BISMUTH	BOTTOM		R-PBGA-B165		1.9 V	1.46 mm		13 mm		18874368 bit	1.7 V		e6				15 mm	.45 ns
UPD46185094BF1-E33-EQ1-A	Renesas Electronics	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		2097152 words		1.8		9	GRID ARRAY, LOW PROFILE			1 mm	70 Cel		2MX9	2M		TIN BISMUTH	BOTTOM		R-PBGA-B165		1.9 V	1.46 mm		13 mm		18874368 bit	1.7 V		e6				15 mm	.45 ns
UPD46185094BF1-E40-EQ1-A	Renesas Electronics	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		2097152 words		1.8		9	GRID ARRAY, LOW PROFILE			1 mm	70 Cel		2MX9	2M		TIN BISMUTH	BOTTOM		R-PBGA-B165		1.9 V	1.46 mm		13 mm		18874368 bit	1.7 V		e6				15 mm	.45 ns
UPD46185182BF1-E33-EQ1-A	Renesas Electronics	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		1048576 words		1.8		18	GRID ARRAY, LOW PROFILE			1 mm	70 Cel		1MX18	1M		TIN BISMUTH	BOTTOM		R-PBGA-B165		1.9 V	1.46 mm		13 mm		18874368 bit	1.7 V		e6				15 mm	.45 ns
UPD46185182BF1-E40-EQ1-A	Renesas Electronics	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		1048576 words		1.8		18	GRID ARRAY, LOW PROFILE			1 mm	70 Cel		1MX18	1M		TIN BISMUTH	BOTTOM		R-PBGA-B165		1.9 V	1.46 mm		13 mm		18874368 bit	1.7 V		e6				15 mm	.45 ns
UPD46185362BF1-E33-EQ1-A	Renesas Electronics	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		1.8		36	GRID ARRAY, LOW PROFILE			1 mm	70 Cel		512KX36	512K		TIN BISMUTH	BOTTOM		R-PBGA-B165		1.9 V	1.46 mm		13 mm		18874368 bit	1.7 V		e6				15 mm	.45 ns
UPD46185364BF1-E40-EQ1-A	Renesas Electronics	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		1.8		36	GRID ARRAY, LOW PROFILE			1 mm	70 Cel		512KX36	512K		TIN BISMUTH	BOTTOM		R-PBGA-B165		1.9 V	1.46 mm		13 mm		18874368 bit	1.7 V		e6				15 mm	.45 ns
UPD46364182BF1-E33-EQ1-A	Renesas Electronics	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		2097152 words		1.8		18	GRID ARRAY, LOW PROFILE			1 mm	70 Cel		2MX18	2M		TIN BISMUTH	BOTTOM		R-PBGA-B165		1.9 V	1.46 mm		13 mm		37748736 bit	1.7 V		e6				15 mm	.45 ns
UPD46364362BF1-E33-EQ1-A	Renesas Electronics	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		1048576 words		1.8		36	GRID ARRAY, LOW PROFILE			1 mm	70 Cel		1MX36	1M		TIN BISMUTH	BOTTOM		R-PBGA-B165		1.9 V	1.46 mm		13 mm		37748736 bit	1.7 V		e6				15 mm	.45 ns
UPD46364365BF1-E40-EQ1-A	Renesas Electronics	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		1048576 words		1.8		36	GRID ARRAY, LOW PROFILE			1 mm	70 Cel		1MX36	1M		TIN BISMUTH	BOTTOM		R-PBGA-B165		1.9 V	1.46 mm		13 mm		37748736 bit	1.7 V		e6				15 mm	.45 ns
UPD46365084BF1-E40-EQ1-A	Renesas Electronics	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.8		8	GRID ARRAY, LOW PROFILE			1 mm	70 Cel		4MX8	4M		TIN BISMUTH	BOTTOM		R-PBGA-B165		1.9 V	1.46 mm		13 mm		33554432 bit	1.7 V		e6				15 mm	.45 ns
UPD46365092BF1-E40-EQ1-A	Renesas Electronics	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.8		9	GRID ARRAY, LOW PROFILE			1 mm	70 Cel		4MX9	4M		TIN BISMUTH	BOTTOM		R-PBGA-B165		1.9 V	1.46 mm		13 mm		37748736 bit	1.7 V		e6				15 mm	.45 ns
UPD46365094BF1-E40-EQ1-A	Renesas Electronics	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.8		9	GRID ARRAY, LOW PROFILE			1 mm	70 Cel		4MX9	4M		TIN BISMUTH	BOTTOM		R-PBGA-B165		1.9 V	1.46 mm		13 mm		37748736 bit	1.7 V		e6				15 mm	.45 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.