Onsemi SRAM 28

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
N02L63W3AT25I	Onsemi	STANDARD SRAM	INDUSTRIAL	44	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16 mA	131072 words	COMMON	3	2.5/3.3	16	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	3-STATE	128KX16	128K	1.8 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-G44	1	3.6 V	1.25 mm		10.16 mm	Not Qualified	2097152 bit	2.3 V	e3			.00001 Amp	18.41 mm	70 ns
N01L63W2AT25I	Onsemi	STANDARD SRAM	INDUSTRIAL	44	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	14 mA	65536 words	COMMON	3	3/3.3	16	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	3-STATE	64KX16	64K	1.8 V	-40 Cel		DUAL		R-PDSO-G44		3.6 V	1.25 mm		10.16 mm	Not Qualified	1048576 bit	2.3 V				.00001 Amp	18.41 mm	70 ns
N04L63W2AB27I	Onsemi	STANDARD SRAM	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16 mA	262144 words	COMMON	3	3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	1.8 V	-40 Cel		BOTTOM		R-PBGA-B48		3.6 V	1.34 mm		6 mm	Not Qualified	4194304 bit	2.3 V				.00001 Amp	8 mm	70 ns
N04L63W2AT27IT	Onsemi	STANDARD SRAM	INDUSTRIAL	44	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16 mA	262144 words	COMMON	3	3/3.3	16	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	3-STATE	256KX16	256K	1.8 V	-40 Cel		DUAL		R-PDSO-G44		3.6 V	1.25 mm		10.16 mm	Not Qualified	4194304 bit	2.3 V				.00001 Amp	18.41 mm	70 ns
N04L63W2AT27I	Onsemi	STANDARD SRAM	INDUSTRIAL	44	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16 mA	262144 words	COMMON	3	3/3.3	16	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	3-STATE	256KX16	256K	1.8 V	-40 Cel		DUAL		R-PDSO-G44		3.6 V	1.25 mm		10.16 mm	Not Qualified	4194304 bit	2.3 V				.00001 Amp	18.41 mm	70 ns
N25S818HAS21I	Onsemi	STANDARD SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	10 mA	32768 words	SEPARATE	1.8	1.8	8	SMALL OUTLINE	SOP8,.25	SRAMs	1.27 mm	85 Cel	3-STATE	32KX8	32K	1.7 V	-40 Cel	MATTE TIN	DUAL	1, (3 LINE)	R-PDSO-G8	3	1.95 V	1.75 mm	16 MHz	3.91 mm	Not Qualified	262144 bit	1.7 V	e3	30	260	.0000005 Amp	4.9 mm
N25S818HAT21I	Onsemi	STANDARD SRAM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	10 mA	32768 words	SEPARATE	1.8	1.8	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	SRAMs	.65 mm	85 Cel	3-STATE	32KX8	32K	1.7 V	-40 Cel	MATTE TIN	DUAL	1, (3 LINE)	R-PDSO-G8	3	1.95 V	1.1 mm	16 MHz	3 mm	Not Qualified	262144 bit	1.7 V	e3	30	260	.0000005 Amp	4.4 mm
N01L83W2AN25I	Onsemi	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	14 mA	131072 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20	SRAMs	.5 mm	85 Cel	3-STATE	128KX8	128K	1.8 V	-40 Cel		DUAL		R-PDSO-G32		3.6 V	1.25 mm		8 mm	Not Qualified	1048576 bit	2.3 V				.00001 Amp	11.8 mm	70 ns
N01L83W2AT25I	Onsemi	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	14 mA	131072 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	SRAMs	.5 mm	85 Cel	3-STATE	128KX8	128K	1.8 V	-40 Cel		DUAL		R-PDSO-G32		3.6 V	1.25 mm		8 mm	Not Qualified	1048576 bit	2.3 V				.00001 Amp	18.4 mm	70 ns
N02L63W3AB25IT	Onsemi	STANDARD SRAM	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16 mA	131072 words	COMMON	3	2.5/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	128KX16	128K	1.8 V	-40 Cel		BOTTOM		R-PBGA-B48		3.6 V	1.34 mm		6 mm	Not Qualified	2097152 bit	2.3 V				.00001 Amp	8 mm	70 ns
N02L63W3AB25I	Onsemi	STANDARD SRAM	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16 mA	131072 words	COMMON	3	2.5/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	128KX16	128K	1.8 V	-40 Cel		BOTTOM		R-PBGA-B48		3.6 V	1.34 mm		6 mm	Not Qualified	2097152 bit	2.3 V				.00001 Amp	8 mm	70 ns
N02L63W3AT25IT	Onsemi	STANDARD SRAM	INDUSTRIAL	44	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16 mA	131072 words	COMMON	3	2.5/3.3	16	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	3-STATE	128KX16	128K	1.8 V	-40 Cel		DUAL		R-PDSO-G44		3.6 V	1.25 mm		10.16 mm	Not Qualified	2097152 bit	2.3 V				.00001 Amp	18.41 mm	70 ns
N64S830HAS22I	Onsemi	STANDARD SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	10 mA	8192 words	SEPARATE	3	2.5/3.3	8	SMALL OUTLINE	SOP8,.25	SRAMs	1.27 mm	85 Cel	3-STATE	8KX8	8K	2.3 V	-40 Cel	MATTE TIN	DUAL	1, (3 LINE)	R-PDSO-G8	3	3.6 V	1.75 mm	20 MHz	3.9 mm	Not Qualified	65536 bit	2.5 V	e3	30	260	.000004 Amp	4.9 mm
N64S830HAT22I	Onsemi	STANDARD SRAM	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	10 mA	8192 words	SEPARATE	3	2.5/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP8,.25	SRAMs	.65 mm	85 Cel	3-STATE	8KX8	8K	2.3 V	-40 Cel	MATTE TIN	DUAL	1, (3 LINE)	R-PDSO-G8	3	3.6 V	1.2 mm	20 MHz	3 mm	Not Qualified	65536 bit	2.5 V	e3	30	260	.000004 Amp	4.4 mm
N02L83W2AN25IT	Onsemi	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16 mA	262144 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20	SRAMs	.5 mm	85 Cel	3-STATE	256KX8	256K	1.8 V	-40 Cel		DUAL		R-PDSO-G32		3.6 V	1.25 mm		8 mm	Not Qualified	2097152 bit	2.3 V				.00001 Amp	11.8 mm	70 ns
N02L83W2AN25I	Onsemi	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16 mA	262144 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20	SRAMs	.5 mm	85 Cel	3-STATE	256KX8	256K	1.8 V	-40 Cel		DUAL		R-PDSO-G32		3.6 V	1.25 mm		8 mm	Not Qualified	2097152 bit	2.3 V				.00001 Amp	11.8 mm	70 ns
N02L83W2AT25I	Onsemi	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16 mA	262144 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	SRAMs	.5 mm	85 Cel	3-STATE	256KX8	256K	1.8 V	-40 Cel		DUAL		R-PDSO-G32		3.6 V	1.25 mm		8 mm	Not Qualified	2097152 bit	2.3 V				.00001 Amp	18.4 mm	70 ns
N08L63W2AB27I	Onsemi	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	15 mA	524288 words	COMMON	3	2.5/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	512KX16	512K	1.8 V	-40 Cel		BOTTOM		R-PBGA-B48		3.6 V	1.2 mm		8 mm	Not Qualified	8388608 bit	2.3 V				.00001 Amp	10 mm	85 ns
N25S830HAS22I	Onsemi	STANDARD SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	10 mA	32768 words	SEPARATE	3	3/3.3	8	SMALL OUTLINE	SOP8,.25	SRAMs	1.27 mm	85 Cel	3-STATE	32KX8	32K	2.7 V	-40 Cel	MATTE TIN	DUAL	1, (3 LINE)	R-PDSO-G8	3	3.6 V	1.75 mm	20 MHz	3.91 mm	Not Qualified	262144 bit	2.7 V	e3	30	260	.000004 Amp	4.9 mm
N25S830HAT22I	Onsemi	STANDARD SRAM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	10 mA	32768 words	SEPARATE	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	SRAMs	.65 mm	85 Cel	3-STATE	32KX8	32K	2.7 V	-40 Cel	MATTE TIN	DUAL	1, (3 LINE)	R-PDSO-G8	3	3.6 V	1.1 mm	20 MHz	3 mm	Not Qualified	262144 bit	2.7 V	e3	30	260	.000004 Amp	4.4 mm
N01L63W3AT25IT	Onsemi	STANDARD SRAM	INDUSTRIAL	44	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	14 mA	65536 words	COMMON	3	3/3.3	16	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	3-STATE	64KX16	64K	1.8 V	-40 Cel		DUAL		R-PDSO-G44		3.6 V	1.25 mm		10.16 mm	Not Qualified	1048576 bit	2.3 V				.00001 Amp	18.41 mm	70 ns
N04L63W1AB27I	Onsemi	STANDARD SRAM	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16 mA	262144 words	COMMON	3	3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	1.8 V	-40 Cel		BOTTOM		R-PBGA-B48		3.6 V	1.34 mm		6 mm	Not Qualified	4194304 bit	2.3 V				.00001 Amp	8 mm	70 ns
N04L63W1AT27I	Onsemi	STANDARD SRAM	INDUSTRIAL	44	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16 mA	262144 words	COMMON	3	3/3.3	16	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	3-STATE	256KX16	256K	1.8 V	-40 Cel		DUAL		R-PDSO-G44		3.6 V	1.25 mm		10.16 mm	Not Qualified	4194304 bit	2.3 V				.00001 Amp	18.41 mm	70 ns
N08L6182AB7I	Onsemi	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	14 mA	524288 words	COMMON	1.8	1.8/2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	512KX16	512K	1.2 V	-40 Cel		BOTTOM		R-PBGA-B48	1	2.2 V	1.2 mm		8 mm	Not Qualified	8388608 bit	1.65 V				.00001 Amp	10 mm	85 ns
N64S818HAS21I	Onsemi	STANDARD SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	10 mA	8192 words	SEPARATE	1.8	1.8	8	SMALL OUTLINE	SOP8,.25	SRAMs	1.27 mm	85 Cel	3-STATE	8KX8	8K	1.7 V	-40 Cel	MATTE TIN	DUAL	1, (3 LINE)	R-PDSO-G8	3	1.95 V	1.75 mm	16 MHz	3.91 mm	Not Qualified	65536 bit	1.7 V	e3	30	260	.0000005 Amp	4.9 mm
N64S818HAT21I	Onsemi	STANDARD SRAM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	10 mA	8192 words	SEPARATE	1.8	1.8	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	SRAMs	.65 mm	85 Cel	3-STATE	8KX8	8K	1.7 V	-40 Cel	MATTE TIN	DUAL	1, (3 LINE)	R-PDSO-G8	3	1.95 V	1.1 mm	16 MHz	3 mm	Not Qualified	65536 bit	1.7 V	e3	30	260	.0000005 Amp	4.4 mm
CAT24C44VI-T3	Onsemi	NON-VOLATILE SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	16 words		5	5	16	SMALL OUTLINE	SOP8,.25	SRAMs	1.27 mm	85 Cel		16X16	16		-40 Cel	TIN	DUAL		R-PDSO-G8	1	5.5 V	1.75 mm		3.9 mm	Not Qualified	256 bit	4.5 V	e3	30	260	.00003 Amp	4.9 mm
N01S818HAT22I	Onsemi	STANDARD SRAM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		131072 words				8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.65 mm	85 Cel		128KX8	128K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G8	3	2.2 V	1.1 mm		3 mm		1048576 bit	1.7 V	e3	30	260		4.4 mm

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.