LASER DIODE Laser Diodes 19

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Manufacturers
    • Broadcom
    • Honeywell Sensing And Control
    • Infineon Technologies
    • NXP Semiconductors
    • Onsemi
    • Osi Laser Diode
    • Osram Opto Semiconductors
    • Panasonic
    • ROHM
    • Renesas Electronics
    • Sharp Corporation
    • Toshiba
    • Tt Electronics Plc
    • Viavi Solutions
Optoelectronic Type (1)
    • LASER DIODE
Mounting Feature
    • RADIAL MOUNT
    • SURFACE MOUNT
    • THROUGH HOLE MOUNT
Terminal Finish
    • GOLD
    • GOLD NICKEL
    • MATTE TIN OVER NICKEL
    • TIN
    • TIN OVER NICKEL
    • Tin/Bismuth (Sn/Bi)
    • Tin/Lead (Sn/Pb)
Configuration
    • COMMON CATHODE 2 ELEMENTS
    • COMMON CATHODE 2 ELEMENTS WITH BUILT-IN PHOTO DIODE
    • COMPLEX
    • SINGLE
    • SINGLE WITH BUILT-IN EA MODULATOR
    • SINGLE WITH BUILT-IN PHOTO DIODE
    • SINGLE WITH BUILT-IN PHOTO DIODE AND PELTIER-COOLER
Size
    • .1 mm
    • 1 mm
    • 1.2 mm
    • 1.27 mm
    • 1.5 mm
    • 1.52 mm
    • 1.6 mm
    • 1.8 mm
    • 10 mm
    • 2 mm
    • 2.1 mm
    • 2.2 mm
    • 2.3 mm
    • 2.4 mm
    • 2.54 mm
    • 2.7 mm
    • 3 mm
    • 3.175 mm
    • 3.55 mm
    • 4.32 mm
    • 4.5 mm
    • 4.9 mm
    • 4.95 mm
    • 5 mm
No. of Functions
    • 1
Maximum Forward Current
    • .01 A
    • .012 A
    • .02 A
    • .025 A
    • .03 A
    • .035 A
    • .04 A
    • .045 A
    • .05 A
    • .055 A
    • .058 A
    • .06 A
    • .065 A
    • .07 A
    • .075 A
    • .08 A
    • .085 A
    • .09 A
    • .095 A
    • .1 A
    • .105 A
    • .11 A
    • .115 A
    • .12 A
    • .125 A
    • .13 A
    • .135 A
    • .14 A
    • .15 A
    • .155 A
    • .18 A
    • .2 A
    • .215 A
    • .225 A
    • .28 A
    • .3 A
    • .33 A
    • .4 A
    • .49 A
    • .6 A
    • .7 A
    • .72 A
    • .94 A
    • .95 A
    • 1 A
    • 1.2 A
    • 1.6 A
    • 1.8 A
    • 11 A
    • 2.6 A
    • 2.9 A
    • 22 A
    • 40 A
    • 5 A
    • 9 A
Peak Wavelength (nm)
    • 1.31
    • 1200
    • 1270
    • 1280
    • 1290
    • 1300
    • 1310
    • 1330
    • 1350
    • 1470
    • 1480
    • 1490
    • 1500
    • 1510
    • 1527
    • 1528
    • 1529
    • 1530
    • 1531
    • 1532
    • 1533
    • 1534
    • 1535
    • 1536
    • 1537
    • 1538
    • 1539
    • 1540
    • 1541
    • 1542
    • 1543
    • 1544
    • 1545
    • 1546
    • 1547
    • 1548
    • 1549
    • 1550
    • 1551
    • 1552
    • 1553
    • 1554
    • 1555
    • 1556
    • 1557
    • 1558
    • 1559
    • 1560
    • 1561
    • 1562
    • 1563
    • 1564
    • 1565
    • 1566
    • 1567
    • 1568
    • 1569
    • 1570
    • 1571
    • 1572
    • 1573
    • 1574
    • 1575
    • 1576
    • 1577
    • 1578
    • 1579
    • 1580
    • 1581
    • 1582
    • 1583
    • 1584
    • 1585
    • 1586
    • 1587
    • 1588
    • 1589
    • 1590
    • 1591
    • 1592
    • 1593
    • 1594
    • 1595
    • 1596
    • 1597
    • 1598
    • 1599
    • 1600
    • 1601
    • 1602
    • 1603
    • 1604
    • 1605
    • 1606
    • 1607
    • 1608
    • 1609
    • 1610
    • 1611
    • 1612
    • 1625
    • 1630
    • 1650
    • 405
    • 520
    • 633
    • 635
    • 638
    • 639
    • 640
    • 645
    • 650
    • 655
    • 656
    • 658
    • 660
    • 661
    • 665
    • 670
    • 675
    • 680
    • 685
    • 690
    • 695
    • 780
    • 783
    • 785
    • 790
    • 795
    • 800
    • 805
    • 806
    • 808
    • 809
    • 810
    • 815
    • 816
    • 820
    • 830
    • 845
    • 848
    • 850
    • 860
    • 870
    • 875
    • 889
    • 890
    • 905
    • 920
    • 940
    • 941
    • 975
Packing Method
    • SAMPLE
    • TR
    • TR, 7 INCH
    • TRAY
Maximum Response Time
    • .00000000004 s
    • .00000000005 s
    • .00000000008 s
    • .00000000009 s
    • .0000000001 s
    • .00000000012 s
    • .000000000125 s
    • .00000000015 s
    • .000000000175 s
    • .0000000002 s
    • .0000000003 s
    • .0000000004 s
    • .0000000005 s
    • .0000000007 s
    • .000000001 s
    • .0000000015 s
    • .000000002 s
    • .0000000035 s
    • .00000001 s
    • .000000013 s
    • .00000002 s
    • .0000005 s
    • .000001 s
Sub-Category
    • Laser Diodes
Semiconductor Material
    • AlGaAs
    • AlGaInAs
    • AlGaInP
    • GaAlAs
    • GaAlInP
    • GaAs
    • GaAsP
    • InAIGaAs/GaAs
    • InGaAlP
    • InGaAs
    • InGaAs/GaAs
    • InGaAsP
Maximum Operating Temperature
    • 100 Cel
    • 105 Cel
    • 30 Cel
    • 35 Cel
    • 40 Cel
    • 45 Cel
    • 50 Cel
    • 55 Cel
    • 60 Cel
    • 65 Cel
    • 70 Cel
    • 75 Cel
    • 80 Cel
    • 85 Cel
    • 90 Cel
    • 95 Cel
Shape
    • CYLINDRICAL
    • RECTANGULAR
    • ROUND
Maximum Threshold Current
    • 1000 mA
    • 15 mA
    • 20 mA
    • 200 mA
    • 230 mA
    • 2300 mA
    • 25 mA
    • 270 mA
    • 3 mA
    • 30 mA
    • 35 mA
    • 40 mA
    • 4000 mA
    • 45 mA
    • 450 mA
    • 50 mA
    • 55 mA
    • 550 mA
    • 60 mA
    • 600 mA
    • 65 mA
    • 70 mA
    • 700 mA
    • 75 mA
    • 80 mA
    • 800 mA
    • 85 mA
    • 850 mA
    • 880 mA
    • 90 mA
    • 900 mA
    • 95 mA
Minimum Operating Temperature
    • -10 Cel
    • -15 Cel
    • -20 Cel
    • -30 Cel
    • -40 Cel
    • -5 Cel
    • -50 Cel
    • 0 Cel
    • 10 Cel
    • 15 Cel
    • 5 Cel
Nominal Output Power
    • .3 W
    • 1 W
    • 1.1 W
    • 1.5 W
    • 1.6 W
    • 10 W
    • 1000 W
    • 110 W
    • 12 W
    • 15 W
    • 150 W
    • 1500 W
    • 175 W
    • 180 W
    • 20 W
    • 200 W
    • 2000 W
    • 240 W
    • 250 W
    • 3 W
    • 30 W
    • 3000 W
    • 320 W
    • 35 W
    • 4.5 W
    • 40 W
    • 5 W
    • 50 W
    • 500 W
    • 5000 W
    • 6 W
    • 60 W
    • 6500 W
    • 7 W
    • 750 W
    • 75000 W
Additional Features
    • AEC-Q101
    • AEC-Q102
    • HIGH RELIABILITY
    • HIGH RELIABILITY, LOW NOISE
    • LOW NOISE
    • WITH CONNECTOR
Spectral Bandwidth
    • .1 m
    • .5 m
    • .85 m
    • 1 m
    • 1.3 m
    • 1.5 m
    • 10 m
    • 15 m
    • 2 m
    • 2.5 m
    • 2.8 m
    • 20 m
    • 200000 m
    • 3 m
    • 3.5 m
    • 30 m
    • 4 m
    • 4.5 m
    • 5 m
    • 50 m
    • 6 m
    • 60 m
    • 7 m
    • 7.5 m
    • 8 m
    • 850000 m
JESD-609 Code
    • e0
    • e3
    • e4
    • e6
Maximum Forward Voltage
    • .0015 V
    • 1.3 V
    • 1.4 V
    • 1.5 V
    • 1.6 V
    • 1.8 V
    • 10 V
    • 11 V
    • 15 V
    • 16 V
    • 2 V
    • 2.1 V
    • 2.2 V
    • 2.3 V
    • 2.4 V
    • 2.45 V
    • 2.5 V
    • 2.55 V
    • 2.6 V
    • 2.7 V
    • 2.8 V
    • 24 V
    • 3 V
    • 3.4 V
    • 3.5 V
    • 4 V
    • 4.5 V
    • 4.6 V
    • 5 V
    • 6.5 V
    • 6.7 V
    • 7.3 V
    • 8 V
Reset All
Part RoHS Manufacturer Optoelectronic Type Mounting Feature Terminal Finish Configuration Size No. of Functions Maximum Forward Current Peak Wavelength (nm) Packing Method Maximum Response Time Sub-Category Semiconductor Material Maximum Operating Temperature Shape Maximum Threshold Current Minimum Operating Temperature Nominal Output Power Additional Features Spectral Bandwidth JESD-609 Code Maximum Forward Voltage

ADNV-6330

Broadcom

LASER DIODE

THROUGH HOLE MOUNT

.012 A

848

Laser Diodes

45 Cel

5 Cel

NX7337BF-AA-AZ

Renesas Electronics

LASER DIODE

THROUGH HOLE MOUNT

1310

.000000002 s

Laser Diodes

InGaAsP

60 Cel

-20 Cel

4.5 m

4 V

NX7338BF-AA-AZ

Renesas Electronics

LASER DIODE

THROUGH HOLE MOUNT

1310

.000000001 s

Laser Diodes

InGaAsP

60 Cel

-20 Cel

4.5 m

4 V

NX7339BB-AA-AZ

Renesas Electronics

LASER DIODE

THROUGH HOLE MOUNT

1310

.000000001 s

Laser Diodes

InGaAsP

60 Cel

-20 Cel

4.5 m

4 V

NX7363JB-BC-AZ

Renesas Electronics

LASER DIODE

THROUGH HOLE MOUNT

1310

.000000002 s

Laser Diodes

InGaAsP

65 Cel

-20 Cel

3 m

4 V

NX7663JB-BC-AZ

Renesas Electronics

LASER DIODE

1625

.000000002 s

Laser Diodes

InGaAsP

65 Cel

-20 Cel

7 m

4 V

NX7563JB-BC-AZ

Renesas Electronics

LASER DIODE

THROUGH HOLE MOUNT

1550

.000000002 s

Laser Diodes

InGaAsP

65 Cel

-20 Cel

6 m

4 V

NX7437BF-AA-AZ

Renesas Electronics

LASER DIODE

THROUGH HOLE MOUNT

1490

.000000002 s

Laser Diodes

InGaAsP

60 Cel

-20 Cel

10 m

3 V

NV4V31MF-A

Renesas Electronics

LASER DIODE

THROUGH HOLE MOUNT

SINGLE

1.2 mm

1

.2 A

405

TRAY

Laser Diodes

85 Cel

ROUND

55 mA

-5 Cel

180 W

NV4V41SF-A

Renesas Electronics

LASER DIODE

THROUGH HOLE MOUNT

.6 A

405

Laser Diodes

30 Cel

0 Cel

4.6 V

NV4V31SF-A

Renesas Electronics

LASER DIODE

THROUGH HOLE MOUNT

.2 A

405

Laser Diodes

85 Cel

-5 Cel

6.5 V

NX8602BF-AA-AZ

Renesas Electronics

LASER DIODE

THROUGH HOLE MOUNT

1650

Laser Diodes

InGaAsP

60 Cel

0 Cel

3 V

NX8663JB-BC-AZ

Renesas Electronics

LASER DIODE

THROUGH HOLE MOUNT

1650

Laser Diodes

InGaAsP

65 Cel

-20 Cel

4 V

NX8601BF-AA-AZ

Renesas Electronics

LASER DIODE

THROUGH HOLE MOUNT

1625

Laser Diodes

InGaAsP

85 Cel

-40 Cel

3 V

SPLLL90_3

Osram Opto Semiconductors

LASER DIODE

RADIAL MOUNT

COMPLEX

1

905

.000000013 s

InAIGaAs/GaAs

100 Cel

RECTANGULAR

-40 Cel

AEC-Q101

7 m

LNCT28PF01WW

Panasonic

LASER DIODE

THROUGH HOLE MOUNT

COMMON CATHODE 2 ELEMENTS

1

.18 A

661

TRAY

85 Cel

RECTANGULAR

70 mA

-10 Cel

200 W

3 V

PLT5520_B1-6

Osram Opto Semiconductors

LASER DIODE

RADIAL MOUNT

SINGLE WITH BUILT-IN PHOTO DIODE

1

.2 A

520

TRAY

60 Cel

ROUND

65 mA

-20 Cel

30 W

6.7 V

RLD78MZA6-00A

ROHM

LASER DIODE

RADIAL MOUNT

SINGLE WITH BUILT-IN PHOTO DIODE

1.6 mm

1

.06 A

790

70 Cel

ROUND

50 mA

-10 Cel

4.5 W

2.3 V

CVN63-90ECL

Osi Laser Diode

LASER DIODE

RADIAL MOUNT

SINGLE

2.2 mm

1

ROUND

8 m

Laser Diodes

Laser diodes are electronic devices that emit a coherent and monochromatic beam of light through the process of stimulated emission. Laser diodes are commonly used in a wide range of applications, including telecommunications, medical equipment, and industrial manufacturing.

Laser diodes are similar in structure to regular diodes but are designed to emit light instead of electrical current. They consist of a semiconductor material, typically gallium arsenide, which is doped with impurities to create a p-n junction. When a voltage is applied across the p-n junction, it causes electrons to move from the n-type region to the p-type region, releasing energy in the form of photons.

Laser diodes are characterized by their high efficiency, small size, and ability to produce a narrow and intense beam of light. They are used in a wide range of applications, including fiber-optic communications, optical storage devices, and laser printers.