| Part | RoHS | Manufacturer | Oscillator Type | Mounting Feature | No. of Terminals | Frequency Stability | Frequency Adjustment (Mechanical) | Package Body Material | Maximum Supply Voltage | Technology | Output Load | Maximum Supply Current | Nominal Supply Voltage | Power Supplies (V) | Package Equivalence Code | Maximum Rise Time | Linearity | Sub-Category | Physical Dimension | Minimum Supply Voltage | Maximum Operating Temperature | Minimum Control Voltage | Minimum Operating Temperature | Terminal Finish | Frequency Deviation or Pullability | Nominal Operating Frequency | Maximum Control Voltage | Maximum Fall Time | Maximum Symmetry (%) | Manufacturer Series | Qualification | Maximum Output Low Current | Additional Features | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
Diodes Incorporated |
CMOS |
SURFACE MOUNT |
6 |
50 % |
NO |
3.63 V |
30 pF |
3.3 V |
8 ms |
10 % |
7.0mm x 5.0mm x 2.0mm |
2.97 V |
85 Cel |
.3 V |
-40 Cel |
100 ppm |
2 MHz |
3 V |
8 ns |
55/45 |
ENABLE/DISABLE FUNCTION; TR |
||||||||||||||
|
|
Diodes Incorporated |
CMOS |
SURFACE MOUNT |
6 |
50 % |
NO |
3.63 V |
30 pF |
3.3 V |
8 ms |
10 % |
7.0mm x 5.0mm x 2.0mm |
2.97 V |
85 Cel |
.3 V |
-40 Cel |
100 ppm |
5.6 MHz |
3 V |
8 ns |
55/45 |
ENABLE/DISABLE FUNCTION; TR |
||||||||||||||
|
|
Diodes Incorporated |
CMOS |
SURFACE MOUNT |
6 |
50 % |
NO |
3.63 V |
30 pF |
3.3 V |
8 ms |
10 % |
7.0mm x 5.0mm x 2.0mm |
2.97 V |
85 Cel |
.3 V |
-40 Cel |
100 ppm |
6.1 MHz |
3 V |
8 ns |
55/45 |
ENABLE/DISABLE FUNCTION; TR |
||||||||||||||
|
|
Diodes Incorporated |
CMOS |
SURFACE MOUNT |
6 |
50 % |
NO |
3.63 V |
30 pF |
3.3 V |
8 ms |
10 % |
7.0mm x 5.0mm x 2.0mm |
2.97 V |
85 Cel |
.3 V |
-40 Cel |
100 ppm |
11.2 MHz |
3 V |
8 ns |
55/45 |
ENABLE/DISABLE FUNCTION; TR |
||||||||||||||
|
|
Diodes Incorporated |
CMOS |
SURFACE MOUNT |
6 |
50 % |
NO |
3.63 V |
30 pF |
3.3 V |
8 ms |
10 % |
7.0mm x 5.0mm x 2.0mm |
2.97 V |
85 Cel |
.3 V |
-40 Cel |
100 ppm |
11.2 MHz |
3 V |
8 ns |
55/45 |
ENABLE/DISABLE FUNCTION; TR |
||||||||||||||
|
|
Diodes Incorporated |
CMOS |
SURFACE MOUNT |
6 |
50 % |
NO |
3.63 V |
30 pF |
3.3 V |
8 ms |
10 % |
7.0mm x 5.0mm x 2.0mm |
2.97 V |
85 Cel |
.3 V |
-40 Cel |
100 ppm |
15.3 MHz |
3 V |
8 ns |
55/45 |
ENABLE/DISABLE FUNCTION; TR |
||||||||||||||
|
|
Diodes Incorporated |
CMOS |
SURFACE MOUNT |
6 |
50 % |
NO |
3.63 V |
30 pF |
3.3 V |
8 ms |
10 % |
7.0mm x 5.0mm x 2.0mm |
2.97 V |
85 Cel |
.3 V |
-40 Cel |
100 ppm |
16.3 MHz |
3 V |
8 ns |
55/45 |
ENABLE/DISABLE FUNCTION; TR |
||||||||||||||
|
|
Diodes Incorporated |
CMOS |
SURFACE MOUNT |
6 |
50 % |
NO |
3.63 V |
30 pF |
3.3 V |
8 ms |
10 % |
7.0mm x 5.0mm x 2.0mm |
2.97 V |
85 Cel |
.3 V |
-40 Cel |
100 ppm |
19.4 MHz |
3 V |
8 ns |
55/45 |
ENABLE/DISABLE FUNCTION; TR |
||||||||||||||
|
|
Diodes Incorporated |
CMOS |
SURFACE MOUNT |
6 |
50 % |
NO |
3.63 V |
30 pF |
3.3 V |
8 ms |
10 % |
7.0mm x 5.0mm x 2.0mm |
2.97 V |
85 Cel |
.3 V |
-40 Cel |
100 ppm |
19.4 MHz |
3 V |
8 ns |
55/45 |
ENABLE/DISABLE FUNCTION; TR |
||||||||||||||
|
|
Diodes Incorporated |
CMOS |
SURFACE MOUNT |
6 |
50 % |
NO |
3.63 V |
30 pF |
3.3 V |
8 ms |
10 % |
7.0mm x 5.0mm x 2.0mm |
2.97 V |
85 Cel |
.3 V |
-40 Cel |
100 ppm |
19.4 MHz |
3 V |
8 ns |
55/45 |
ENABLE/DISABLE FUNCTION; TR |
||||||||||||||
|
|
Diodes Incorporated |
CMOS |
SURFACE MOUNT |
6 |
50 % |
NO |
3.63 V |
30 pF |
3.3 V |
8 ms |
10 % |
7.0mm x 5.0mm x 2.0mm |
2.97 V |
85 Cel |
.3 V |
-40 Cel |
100 ppm |
25 MHz |
3 V |
8 ns |
55/45 |
ENABLE/DISABLE FUNCTION; TR |
||||||||||||||
|
|
Diodes Incorporated |
CMOS |
SURFACE MOUNT |
6 |
50 % |
NO |
3.63 V |
30 pF |
3.3 V |
8 ms |
10 % |
7.0mm x 5.0mm x 2.0mm |
2.97 V |
85 Cel |
.3 V |
-40 Cel |
100 ppm |
25 MHz |
3 V |
8 ns |
55/45 |
ENABLE/DISABLE FUNCTION; TR |
||||||||||||||
|
|
Diodes Incorporated |
CMOS |
SURFACE MOUNT |
6 |
50 % |
NO |
3.63 V |
30 pF |
3.3 V |
8 ms |
10 % |
7.0mm x 5.0mm x 2.0mm |
2.97 V |
85 Cel |
.3 V |
-40 Cel |
100 ppm |
25 MHz |
3 V |
8 ns |
55/45 |
ENABLE/DISABLE FUNCTION; TR |
||||||||||||||
|
|
Diodes Incorporated |
CMOS |
SURFACE MOUNT |
6 |
50 % |
NO |
3.63 V |
30 pF |
3.3 V |
8 ms |
10 % |
7.0mm x 5.0mm x 2.0mm |
2.97 V |
85 Cel |
.3 V |
-40 Cel |
100 ppm |
27 MHz |
3 V |
8 ns |
55/45 |
ENABLE/DISABLE FUNCTION; TR |
||||||||||||||
|
|
Diodes Incorporated |
CMOS |
SURFACE MOUNT |
6 |
50 % |
NO |
3.63 V |
30 pF |
3.3 V |
8 ms |
10 % |
7.0mm x 5.0mm x 2.0mm |
2.97 V |
85 Cel |
.3 V |
-40 Cel |
100 ppm |
3 V |
8 ns |
55/45 |
ENABLE/DISABLE FUNCTION; TR |
|||||||||||||||
|
|
Diodes Incorporated |
CMOS |
SURFACE MOUNT |
6 |
50 % |
NO |
3.63 V |
30 pF |
3.3 V |
8 ms |
10 % |
7.0mm x 5.0mm x 2.0mm |
2.97 V |
85 Cel |
.3 V |
-40 Cel |
100 ppm |
3 V |
8 ns |
55/45 |
ENABLE/DISABLE FUNCTION; TR |
|||||||||||||||
|
|
Diodes Incorporated |
CMOS |
SURFACE MOUNT |
6 |
50 % |
NO |
3.63 V |
30 pF |
3.3 V |
8 ms |
10 % |
7.0mm x 5.0mm x 2.0mm |
2.97 V |
85 Cel |
.3 V |
-40 Cel |
100 ppm |
3 V |
8 ns |
55/45 |
ENABLE/DISABLE FUNCTION; TR |
|||||||||||||||
|
|
Diodes Incorporated |
CMOS |
SURFACE MOUNT |
6 |
50 % |
NO |
3.63 V |
30 pF |
3.3 V |
8 ms |
10 % |
7.0mm x 5.0mm x 2.0mm |
2.97 V |
85 Cel |
.3 V |
-40 Cel |
100 ppm |
3 V |
8 ns |
55/45 |
ENABLE/DISABLE FUNCTION; TR |
|||||||||||||||
|
|
Diodes Incorporated |
CMOS |
SURFACE MOUNT |
4 |
50 % |
NO |
3.465 V |
15 pF |
3.3 V |
4 ms |
10 % |
5.0mm x 3.2mm x 1.3mm |
3.165 V |
85 Cel |
.3 V |
-40 Cel |
100 ppm |
12.2 MHz |
3 V |
4 ns |
55/45 |
ENABLE/DISABLE FUNCTION; TR |
||||||||||||||
|
|
Diodes Incorporated |
CMOS |
SURFACE MOUNT |
4 |
50 % |
NO |
3.465 V |
15 pF |
3.3 V |
4 ms |
10 % |
2.5mm x 2.0mm x 0.9mm |
3.165 V |
85 Cel |
.3 V |
-40 Cel |
100 ppm |
27 MHz |
3 V |
4 ns |
55/45 |
ENABLE/DISABLE FUNCTION; TR |
||||||||||||||
|
|
Diodes Incorporated |
CMOS |
SURFACE MOUNT |
4 |
50 % |
NO |
3.465 V |
15 pF |
3.3 V |
4 ms |
10 % |
3.2mm x 2.5mm x 1.0mm |
3.165 V |
85 Cel |
.3 V |
-40 Cel |
100 ppm |
24.5 MHz |
3 V |
4 ns |
55/45 |
ENABLE/DISABLE FUNCTION; TR |
||||||||||||||
|
|
Diodes Incorporated |
CMOS |
SURFACE MOUNT |
4 |
50 % |
NO |
3.465 V |
15 pF |
3.3 V |
4 ms |
10 % |
3.2mm x 2.5mm x 1.0mm |
3.165 V |
85 Cel |
.3 V |
-40 Cel |
100 ppm |
27 MHz |
3 V |
4 ns |
55/45 |
ENABLE/DISABLE FUNCTION; TR |
||||||||||||||
|
|
Diodes Incorporated |
CMOS |
SURFACE MOUNT |
6 |
50 % |
NO |
3.63 V |
3.3 V |
4 ms |
10 % |
7.0mm x 5.0mm x 2.0mm |
2.97 V |
85 Cel |
.3 V |
-40 Cel |
100 ppm |
3 V |
4 ns |
60/40 |
ENABLE/DISABLE FUNCTION; TR |
||||||||||||||||
|
Microchip Technology |
CMOS |
SURFACE MOUNT |
6 |
NO |
3.63 V |
15 pF |
5 % |
3.0mm x 1.7mm x 1.35mm |
2.25 V |
85 Cel |
0 V |
-40 Cel |
300 ppm |
3.3 V |
55/45 |
TRI-STATE; ENABLE/DISABLE FUNCTION; TUBE |
36 MHz |
130 MHz |
Voltage Controlled Crystal Oscillators (VCXOs) are electronic devices that generate a stable clock signal with a frequency that can be controlled using a voltage input. They use a crystal resonator as the frequency-determining element, which is voltage-tuned using a varactor diode or a voltage-controlled amplifier. VCXOs offer several advantages in electronic circuit design.
One of the main benefits of VCXOs is their ability to generate a stable and precise clock signal that can be adjusted in real-time using a control voltage. This makes them suitable for use in applications that require precise timing, such as in digital signal processing and telecommunications. VCXOs can generate frequencies ranging from a few megahertz to several hundred megahertz, making them suitable for various electronic circuits.
VCXOs also offer a low phase noise, which is important in applications that require a clean and stable clock signal. The low phase noise of VCXOs makes them ideal for use in communication systems, network equipment, and instrumentation.
Finally, VCXOs have a relatively simple design and are easy to integrate into electronic systems. They are available in a range of package sizes and configurations, allowing them to be used in various applications. This makes them a cost-effective solution for frequency generation in electronic circuits.