12 RF & Microwave Amplifiers 19

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	Screening Level	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
ALM-1612-BLKG	Broadcom			12	PLASTIC/EPOXY	GAAS		1			11.5 mA		1.8/2.7	MODULE,12LEAD,.13		RF/Microwave Amplifiers
ALM-1612-TR1G	Broadcom			12	PLASTIC/EPOXY	GAAS		1			11.5 mA		1.8/2.7	MODULE,12LEAD,.13		RF/Microwave Amplifiers
CA30063	Harris Semiconductor			12	METAL	BIPOLAR	MIL-STD-883 Class B (Modified)				25 mA		+-6	CAN12,.23		RF/Microwave Amplifiers	125 Cel		-55 Cel	Tin/Lead (Sn/Pb)		e0
UPG2301T5L-E2-A	Renesas Electronics	NARROW BAND MEDIUM POWER	SURFACE MOUNT	12	PLASTIC/EPOXY			1	10 dBm		130 mA	COMPONENT	3.3	LCC12,.08SQ,20		RF/Microwave Amplifiers	85 Cel	19 dB	-40 Cel				2400 MHz	2500 MHz
ALM-1412-BLKG	Broadcom	WIDE BAND LOW POWER		12	PLASTIC/EPOXY	GAAS		1	15 dBm		15 mA	COMPONENT	1/2.85	MODULE,12LEAD,.13	50 ohm	RF/Microwave Amplifiers		11 dB			CMOS COMPATIBLE		0 MHz	1575 MHz
ALM-1412-TR1G	Broadcom	WIDE BAND LOW POWER		12	PLASTIC/EPOXY	GAAS		1	15 dBm		15 mA	COMPONENT	1/2.85	MODULE,12LEAD,.13	50 ohm	RF/Microwave Amplifiers		11 dB			CMOS COMPATIBLE		0 MHz	1575 MHz
ALM-2812-BLKG	Broadcom	NARROW BAND LOW POWER	SURFACE MOUNT	12	PLASTIC/EPOXY	GAAS		2	5 dBm		31 mA	COMPONENT	3.3	LCC12,.12SQ,25	50 ohm	RF/Microwave Amplifiers		15 dB			CMOS COMPATIBLE		2400 MHz	2500 MHz
ALM-2812-TR1G	Broadcom	NARROW BAND LOW POWER	SURFACE MOUNT	12	PLASTIC/EPOXY	GAAS		2	5 dBm		31 mA	COMPONENT	3.3	LCC12,.12SQ,25	50 ohm	RF/Microwave Amplifiers		15 dB			CMOS COMPATIBLE		2400 MHz	2500 MHz
MAX2373ETC	Maxim Integrated	NARROW BAND LOW POWER	SURFACE MOUNT	12	PLASTIC/EPOXY			1	5 dBm		5.5 mA	COMPONENT	2.7	LCC12,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	10.5 dB	-40 Cel	TIN LEAD		e0	850 MHz	940 MHz
MAX2371EGC	Maxim Integrated	NARROW BAND LOW POWER	SURFACE MOUNT	12	CERAMIC			1	5 dBm		5.5 mA	COMPONENT	2.7	LCC12,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	10.5 dB	-40 Cel	Tin/Lead (Sn85Pb15)		e0	136 MHz	174 MHz
MAX2373EGC-T	Maxim Integrated	NARROW BAND LOW POWER	SURFACE MOUNT	12	CERAMIC			1	5 dBm		5.5 mA	COMPONENT	2.7	LCC12,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	10.5 dB	-40 Cel	Tin/Lead (Sn/Pb)		e0	850 MHz	940 MHz
ALM-1712-BLKG	Broadcom	NARROW BAND LOW POWER		12	PLASTIC/EPOXY			1	15 dBm		15 mA	COMPONENT	1.8/2.7	MODULE,12LEAD(UNSPEC)	50 ohm	RF/Microwave Amplifiers		11 dB			LOW NOISE
ALM-1712-TR1G	Broadcom	NARROW BAND LOW POWER		12	PLASTIC/EPOXY			1	15 dBm		15 mA	COMPONENT	1.8/2.7	MODULE,12LEAD(UNSPEC)	50 ohm	RF/Microwave Amplifiers		11 dB			LOW NOISE
SKY65116-21	Skyworks Solutions	WIDE BAND HIGH POWER	SURFACE MOUNT	12	PLASTIC/EPOXY	BIPOLAR		1			1300 mA	COMPONENT	3.6	LCC12,.32SQ,75/64	50 ohm		85 Cel	35 dB	-40 Cel	Gold (Au)	HIGH RELIABILITY	e4	390 MHz	500 MHz
A2I09VD050GNR1	NXP Semiconductors	WIDE BAND HIGH POWER	SURFACE MOUNT	12	PLASTIC/EPOXY	LDMOS		1	20 dBm	10		COMPONENT	48		50 ohm		150 Cel	35 dB	-40 Cel	TIN		e3	575 MHz	960 MHz
A3M40PD012T7	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	12	PLASTIC/EPOXY			1	25 dBm	1.38	300 mA	COMPONENT	3.3	LCC12,.08SQ,20	50 ohm		125 Cel	30 dB					2300 MHz	4200 MHz
F1429MBNELI8	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	12				1	20 dBm	1.1	86 mA	COMPONENT	3.3/5	LCC12,.08SQ,20	100 ohm		115 Cel	18 dB	-40 Cel		LOW NOISE		3000 MHz	4200 MHz
TRF1208RPVR	Texas Instruments	WIDE BAND LOW POWER	SURFACE MOUNT	12	PLASTIC/EPOXY	BICMOS		1	20 dBm			COMPONENT	3.3	LCC12,.08SQ,20	100 ohm		105 Cel	16 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	10 MHz	11000 MHz
TRF1208RPVT	Texas Instruments	WIDE BAND LOW POWER	SURFACE MOUNT	12	PLASTIC/EPOXY	BICMOS		1	20 dBm			COMPONENT	3.3	LCC12,.08SQ,20	100 ohm		105 Cel	16 dB	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)		e4	10 MHz	11000 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.