16 RF & Microwave Amplifiers 65

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	Screening Level	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
MGA-23003-BLKG	Broadcom	NARROW BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS		1	15 dBm			COMPONENT	3.3	LCC16,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	32 dB	-40 Cel			3300 MHz	3800 MHz
MGA-23003-TR1G	Broadcom	NARROW BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS		1	15 dBm			COMPONENT	3.3	LCC16,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	32 dB	-40 Cel			3300 MHz	3800 MHz
MGA-25203-BLKG	Broadcom	NARROW BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS		1	15 dBm			COMPONENT	3.3	LCC16,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	27 dB	-40 Cel			4900 MHz	5900 MHz
MGA-25203-TR1G	Broadcom	NARROW BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS		1	15 dBm			COMPONENT	3.3	LCC16,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	27 dB	-40 Cel			4900 MHz	5900 MHz
ADPA7002AEHZ-R7	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16	CERAMIC	GAAS		1	25 dBm			COMPONENT	5		50 ohm		85 Cel	13.5 dB	-40 Cel			18000 MHz	44000 MHz
HMC716ALP3ETR	Analog Devices	NARROW BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS		1	10 dBm	1.38	90 mA	COMPONENT	3,5	LCC16,.12SQ,20	50 ohm		85 Cel	15.5 dB	-40 Cel			3100 MHz	3900 MHz
ADPA7004CHIP-SX	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16		PHEMT		1	18 dBm	1.15		COMPONENT	-0.4,3.5	DIE OR CHIP	50 ohm		85 Cel	13 dB	-55 Cel			40000 MHz	80000 MHz
HMC716ALP3E	Analog Devices	NARROW BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS		1	10 dBm	1.38	90 mA	COMPONENT	3,5	LCC16,.12SQ,20	50 ohm		85 Cel	15.5 dB	-40 Cel			3100 MHz	3900 MHz
HMC717ALP3E	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	PHEMT		1	20 dBm	1.43	100 mA	COMPONENT	3/5	LCC16,.12SQ,20	50 ohm		85 Cel	11 dB	-40 Cel	MATTE TIN	e3	4800 MHz	6000 MHz
HMC5805LS6TR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	16	CERAMIC	GAAS		1	17 dBm	7		COMPONENT	10	LCC16,.24SQ,40/32	50 ohm		85 Cel	13.5 dB	-40 Cel				40000 MHz
HMC618ALP3E	Analog Devices	NARROW BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	PHEMT		1	10 dBm		65 mA	COMPONENT	5	LCC16,.12SQ,20	50 ohm		85 Cel	12.5 dB	-40 Cel	MATTE TIN	e3	1200 MHz	2200 MHz
ADPA7006AEHZ-R7	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16	CERAMIC, METAL-SEALED COFIRED	GAAS		1	20 dBm			COMPONENT	5		50 ohm		85 Cel	20 dB	-40 Cel			18000 MHz	44000 MHz
ADPA7006AEHZ	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16	CERAMIC, METAL-SEALED COFIRED	GAAS		1	20 dBm			COMPONENT	5		50 ohm		85 Cel	20 dB	-40 Cel			18000 MHz	44000 MHz
ADL8104ACPZN	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16		PHEMT		1	25 dBm	1.58		COMPONENT	5	LCC16,.12SQ,20	50 ohm		85 Cel	10 dB	-40 Cel			400 MHz	7500 MHz
ADL8104ACPZN-R7	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16		PHEMT		1	25 dBm	1.58		COMPONENT	5	LCC16,.12SQ,20	50 ohm		85 Cel	10 dB	-40 Cel			400 MHz	7500 MHz
HMC717ALP3ETR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	PHEMT		1	20 dBm	1.43	100 mA	COMPONENT	3/5	LCC12,.12SQ,20	50 ohm		85 Cel	11 dB	-40 Cel	Matte Tin (Sn) - annealed	e3	4800 MHz	6000 MHz
BTS6302UJ	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY		IEC-60134	1	10 dBm	1.67	120 mA	COMPONENT	5	LCC16,.12SQ,20	50 ohm		115 Cel	33.8 dB	-40 Cel			2300 MHz	5000 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.