24 RF & Microwave Amplifiers 12

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
HMC634LC4TR-R5	Analog Devices		SURFACE MOUNT	24	PLASTIC/EPOXY	GAAS	1					5	LCC24,.16SQ,20		RF/Microwave Amplifiers	85 Cel		-40 Cel
ALM-12124-BLKG	Broadcom	NARROW BAND MEDIUM POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	GAAS	1					5,28	LCC24(UNSPEC)		RF/Microwave Amplifiers	85 Cel		-40 Cel
ALM-12124-TR1G	Broadcom	NARROW BAND MEDIUM POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	GAAS	1					5,28	LCC24(UNSPEC)		RF/Microwave Amplifiers	85 Cel		-40 Cel
ALM-12224-BLKG	Broadcom	NARROW BAND MEDIUM POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	GAAS	1					5,28	LCC24(UNSPEC)		RF/Microwave Amplifiers	85 Cel		-40 Cel
HMC1131LC4TR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	24	CERAMIC	GAAS	1	12 dBm			COMPONENT	5	LCC24,.16SQ,20	50 ohm		85 Cel	22 dB	-40 Cel	GOLD NICKEL		e4	24000 MHz	35000 MHz
HMC1131LC4	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	24	CERAMIC	GAAS	1	12 dBm			COMPONENT	5	LCC24,.16SQ,20	50 ohm		85 Cel	22 dB	-40 Cel	GOLD NICKEL		e4	24000 MHz	35000 MHz
HMC952ALP5GE	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	GAAS	1	24 dBm			COMPONENT	6	LCC24,.2SQ,25	50 ohm		85 Cel	28 dB	-55 Cel	Matte Tin (Sn) - annealed		e3	8000 MHz	14000 MHz
HMC392ALC4	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	24		GAAS	1	20 dBm		75 mA	COMPONENT	5	LCC24,.16SQ,20	50 ohm		85 Cel	14.5 dB	-40 Cel	GOLD NICKEL	HIGH RELIABILITY	e4	3500 MHz	8000 MHz
MMZ25332B4T1	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	HYBRID	1	30 dBm		415 mA	COMPONENT	5	LCC24,.16SQ,20	50 ohm			23.5 dB		TIN		e3	1500 MHz	2700 MHz
MMZ38333BT1	NXP Semiconductors	NARROW BAND LOW POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	HYBRID	1	30 dBm	1.58	1200 mA	COMPONENT	5	LCC24,.16SQ,20	50 ohm			36.3 dB		TIN		e3	3400 MHz	3800 MHz
ADL9005ACPZN-R7	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	PHEMT	1	22 dBm	1.49		COMPONENT	5	LCC24,.16SQ,20	50 ohm		85 Cel	17 dB	-40 Cel				10 MHz	26500 MHz
HMC963LC4TR-R5	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	24	CERAMIC	PHEMT	1	0 dBm	1.92	65 mA	COMPONENT	3.5	LCC24,.16SQ,20	50 ohm		85 Cel	16.5 dB	-40 Cel	Gold (Au) - with Nickel (Ni) barrier		e4	6000 MHz	26500 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.