| Part | RoHS | Manufacturer | RF or Microwave Device Type | Mounting Feature | No. of Terminals | Package Body Material | Technology | Screening Level | Total Dose (V) | Maximum Supply Voltage | No. of Functions | Maximum Input Power (CW) | Maximum Voltage Standing Wave Ratio | Maximum Supply Current | Construction | Power Supplies (V) | Package Equivalence Code | Characteristic Impedance | Sub-Category | Maximum Operating Temperature | Gain | Minimum Operating Temperature | Terminal Finish | Additional Features | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
1 |
10 dBm |
160 mA |
COMPONENT |
4 |
LCC8(UNSPEC) |
50 ohm |
RF/Microwave Amplifiers |
23 dB |
Nickel/Gold (Ni/Au) |
LOW NOISE |
e4 |
7000 MHz |
21000 MHz |
||||||||
|
Maxim Integrated |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
1 |
15 dBm |
2 |
104 mA |
COMPONENT |
5 |
TSSOP8,.19 |
75 ohm |
RF/Microwave Amplifiers |
85 Cel |
7.1 dB |
-40 Cel |
TIN LEAD |
e0 |
44 MHz |
878 MHz |
|||||||
|
Maxim Integrated |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
1 |
15 dBm |
2 |
104 mA |
COMPONENT |
5 |
TSSOP8,.19 |
75 ohm |
RF/Microwave Amplifiers |
85 Cel |
7.1 dB |
-40 Cel |
Tin/Lead (Sn85Pb15) |
e0 |
44 MHz |
878 MHz |
|||||||
|
|
Broadcom |
NARROW BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
1 |
10 dBm |
2.5 |
515 mA |
COMPONENT |
3.4 |
SOLCC8,.11,32 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
14 dB |
-30 Cel |
824 MHz |
849 MHz |
||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
1 |
10 dBm |
52 mA |
COMPONENT |
5 |
SOLCC8,.08,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
15.6 dB |
-40 Cel |
Tin/Lead (Sn85Pb15) |
e0 |
1 MHz |
2700 MHz |
||||||||
|
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
1 |
20 dBm |
230 mA |
COMPONENT |
5 |
LCC8,.2SQ,28 |
50 ohm |
RF/Microwave Amplifiers |
18 dB |
Nickel/Gold (Ni/Au) |
e4 |
18000 MHz |
33000 MHz |
|||||||||
|
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
1 |
20 dBm |
230 mA |
COMPONENT |
5 |
LCC8,.2SQ,28 |
50 ohm |
RF/Microwave Amplifiers |
18 dB |
Nickel/Gold (Ni/Au) |
e4 |
18000 MHz |
33000 MHz |
|||||||||
|
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
5 V |
1 |
20 dBm |
COMPONENT |
5 |
LCC8,.2SQ,28 |
50 ohm |
RF/Microwave Amplifiers |
18 dB |
18000 MHz |
33000 MHz |
|||||||||||
|
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
23 dBm |
COMPONENT |
5 |
LCC8,.2SQ,28 |
50 ohm |
RF/Microwave Amplifiers |
24 dB |
13000 MHz |
16000 MHz |
|||||||||||
|
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
23 dBm |
COMPONENT |
5 |
LCC8,.2SQ,28 |
50 ohm |
RF/Microwave Amplifiers |
24 dB |
13000 MHz |
16000 MHz |
|||||||||||
|
|
Broadcom |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
14 dBm |
23 mA |
COMPONENT |
1.4 |
SOLCC8,.1,20 |
50 ohm |
RF/Microwave Amplifiers |
15.7 dB |
Tin (Sn) |
LOW NOISE |
e3 |
1500 MHz |
8000 MHz |
|||||||
|
|
Broadcom |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
67 mA |
COMPONENT |
5 |
SOLCC8,.08,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
16.5 dB |
-40 Cel |
Tin (Sn) |
e3 |
450 MHz |
2000 MHz |
||||||
|
|
Broadcom |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
67 mA |
COMPONENT |
5 |
SOLCC8,.08,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
16.5 dB |
-40 Cel |
Matte Tin (Sn) |
e3 |
450 MHz |
2000 MHz |
||||||
|
|
Broadcom |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
10 dBm |
55 mA |
COMPONENT |
3.3 |
SOLCC8,.08,20 |
RF/Microwave Amplifiers |
23 dB |
Matte Tin (Sn) |
e3 |
1700 MHz |
3000 MHz |
|||||||||
|
|
Broadcom |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
10 dBm |
55 mA |
COMPONENT |
3.3 |
SOLCC8,.08,20 |
RF/Microwave Amplifiers |
23 dB |
Matte Tin (Sn) |
e3 |
1700 MHz |
3000 MHz |
|||||||||
|
|
Broadcom |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
10 dBm |
55 mA |
COMPONENT |
3.3 |
SOLCC8,.08,20 |
RF/Microwave Amplifiers |
23 dB |
Matte Tin (Sn) |
e3 |
1700 MHz |
3000 MHz |
|||||||||
|
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
1 |
10 dBm |
90 mA |
COMPONENT |
3 |
LCC8(UNSPEC) |
50 ohm |
RF/Microwave Amplifiers |
20 dB |
18000 MHz |
32000 MHz |
|||||||||||
|
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
1 |
10 dBm |
90 mA |
COMPONENT |
3 |
LCC8(UNSPEC) |
50 ohm |
RF/Microwave Amplifiers |
20 dB |
18000 MHz |
32000 MHz |
|||||||||||
|
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
1 |
10 dBm |
90 mA |
COMPONENT |
3 |
LCC8(UNSPEC) |
50 ohm |
RF/Microwave Amplifiers |
20 dB |
18000 MHz |
32000 MHz |
|||||||||||
|
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PHEMT |
1 |
20 dBm |
1.38 |
COMPONENT |
2 |
SOLCC8,.08,20 |
50 ohm |
85 Cel |
24.5 dB |
-40 Cel |
23000 MHz |
31000 MHz |
||||||||||
|
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PHEMT |
1 |
20 dBm |
1.38 |
COMPONENT |
2 |
SOLCC8,.08,20 |
50 ohm |
85 Cel |
24.5 dB |
-40 Cel |
23000 MHz |
31000 MHz |
||||||||||
|
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
COMPONENT |
1.8,3.3 |
SOLCC8,.08,20 |
100 ohm |
85 Cel |
24.1 dB |
-40 Cel |
10100 MHz |
11700 MHz |
|||||||||||
|
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
1 |
COMPONENT |
1.8,3.3 |
SOLCC8,.08,20 |
100 ohm |
85 Cel |
22.5 dB |
-40 Cel |
21200 MHz |
23600 MHz |
||||||||||||
|
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PHEMT |
1 |
20 dBm |
60 mA |
COMPONENT |
7.5 |
DIE OR CHIP |
50 ohm |
85 Cel |
12.5 dB |
-55 Cel |
10 MHz |
28000 MHz |
||||||||||
|
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PHEMT |
1 |
20 dBm |
60 mA |
COMPONENT |
7.5 |
DIE OR CHIP |
50 ohm |
85 Cel |
12.5 dB |
-55 Cel |
10 MHz |
28000 MHz |
||||||||||
|
|
NXP Semiconductors |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
E-PHEMT |
1 |
20 dBm |
65 mA |
COMPONENT |
5 |
SOLCC8,.08,20 |
50 ohm |
14.2 dB |
TIN |
e3 |
1000 MHz |
4000 MHz |
|||||||||
|
|
NXP Semiconductors |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
1 |
20 dBm |
1.07 |
60 mA |
COMPONENT |
5 |
SOLCC8,.08,20 |
50 ohm |
85 Cel |
17 dB |
-40 Cel |
300 MHz |
1500 MHz |
|||||||||
|
|
Analog Devices |
WIDE BAND HIGH POWER |
PANEL MOUNT |
8 |
HYBRID |
1 |
550 mA |
MODULE |
34 |
SOT-115J |
75 ohm |
85 Cel |
26.7 dB |
-30 Cel |
45 MHz |
1218 MHz |
|||||||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
8 |
GAAS |
1 |
1.08 |
COMPONENT |
10 |
DIE OR CHIP |
50 ohm |
9.5 dB |
0 MHz |
48000 MHz |
||||||||||||||
|
|
M/a-com Technology Solutions |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
1 |
24 dBm |
1.67 |
75 mA |
COMPONENT |
5 |
DIE OR CHIP |
50 ohm |
85 Cel |
18 dB |
-40 Cel |
30 MHz |
8000 MHz |
||||||||||
|
|
Analog Devices |
WIDE BAND HIGH POWER |
PANEL MOUNT |
8 |
PHEMT |
1 |
75 dBm |
490 mA |
MODULE |
24 |
75 ohm |
85 Cel |
25 dB |
-30 Cel |
45 MHz |
1218 MHz |
|||||||||||
|
|
M/a-com Technology Solutions |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
8 |
1 |
10 dBm |
1.58 |
140 mA |
COMPONENT |
5 |
DIE OR CHIP |
50 ohm |
85 Cel |
16.5 dB |
-40 Cel |
5000 MHz |
20000 MHz |
||||||||||
|
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PHEMT |
1 |
22 dBm |
1.54 |
COMPONENT |
5 |
SOLCC8,.08,20 |
50 ohm |
85 Cel |
18 dB |
-40 Cel |
6000 MHz |
18000 MHz |
RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.
The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.
RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.