CERAMIC RF & Microwave Amplifiers 9

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Part RoHS Manufacturer RF or Microwave Device Type Mounting Feature No. of Terminals Package Body Material Technology Screening Level Total Dose (V) Maximum Supply Voltage No. of Functions Maximum Input Power (CW) Maximum Voltage Standing Wave Ratio Maximum Supply Current Construction Power Supplies (V) Package Equivalence Code Characteristic Impedance Sub-Category Maximum Operating Temperature Gain Minimum Operating Temperature Terminal Finish Additional Features JESD-609 Code Minimum Operating Frequency Maximum Operating Frequency

MAX2371EGC

Maxim Integrated

NARROW BAND LOW POWER

SURFACE MOUNT

12

CERAMIC

1

5 dBm

5.5 mA

COMPONENT

2.7

LCC12,.12SQ,20

50 ohm

RF/Microwave Amplifiers

85 Cel

10.5 dB

-40 Cel

Tin/Lead (Sn85Pb15)

e0

136 MHz

174 MHz

MAX2373EGC-T

Maxim Integrated

NARROW BAND LOW POWER

SURFACE MOUNT

12

CERAMIC

1

5 dBm

5.5 mA

COMPONENT

2.7

LCC12,.12SQ,20

50 ohm

RF/Microwave Amplifiers

85 Cel

10.5 dB

-40 Cel

Tin/Lead (Sn/Pb)

e0

850 MHz

940 MHz

ADPA7002AEHZ-R7

Analog Devices

WIDE BAND MEDIUM POWER

SURFACE MOUNT

16

CERAMIC

GAAS

1

25 dBm

COMPONENT

5

50 ohm

85 Cel

13.5 dB

-40 Cel

18000 MHz

44000 MHz

HMC1131LC4TR

Analog Devices

WIDE BAND LOW POWER

SURFACE MOUNT

24

CERAMIC

GAAS

1

12 dBm

COMPONENT

5

LCC24,.16SQ,20

50 ohm

85 Cel

22 dB

-40 Cel

GOLD NICKEL

e4

24000 MHz

35000 MHz

HMC1131LC4

Analog Devices

WIDE BAND LOW POWER

SURFACE MOUNT

24

CERAMIC

GAAS

1

12 dBm

COMPONENT

5

LCC24,.16SQ,20

50 ohm

85 Cel

22 dB

-40 Cel

GOLD NICKEL

e4

24000 MHz

35000 MHz

HMC1087F10

Analog Devices

WIDE BAND HIGH POWER

SURFACE MOUNT

10

CERAMIC

GAN

1

34 dBm

6

COMPONENT

28

50 ohm

85 Cel

11 dB

-40 Cel

2000 MHz

20000 MHz

HMC5805LS6TR

Analog Devices

WIDE BAND LOW POWER

SURFACE MOUNT

16

CERAMIC

GAAS

1

17 dBm

7

COMPONENT

10

LCC16,.24SQ,40/32

50 ohm

85 Cel

13.5 dB

-40 Cel

40000 MHz

CMPA5259050F

Wolfspeed

WIDE BAND HIGH POWER

SURFACE MOUNT

6

CERAMIC

PHEMT

1

3

1000 mA

COMPONENT

28

50 ohm

105 Cel

31 dB

-40 Cel

5200 MHz

5900 MHz

HMC963LC4TR-R5

Analog Devices

WIDE BAND LOW POWER

SURFACE MOUNT

24

CERAMIC

PHEMT

1

0 dBm

1.92

65 mA

COMPONENT

3.5

LCC24,.16SQ,20

50 ohm

85 Cel

16.5 dB

-40 Cel

Gold (Au) - with Nickel (Ni) barrier

e4

6000 MHz

26500 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.