NARROW BAND HIGH POWER RF & Microwave Amplifiers 38

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
MGA-43128-BLKG	Broadcom	NARROW BAND HIGH POWER	SURFACE MOUNT	28	PLASTIC/EPOXY	GAAS	1	20 dBm	6		COMPONENT	5	LCC28,.2SQ,20	50 ohm	RF/Microwave Amplifiers		31.5 dB		Tin (Sn)	CMOS COMPATIBLE	e3	700 MHz	800 MHz
MGA-43628-BLKG	Broadcom	NARROW BAND HIGH POWER	SURFACE MOUNT	28	PLASTIC/EPOXY	GAAS	3			600 mA		5	LCC28,.2SQ,20		RF/Microwave Amplifiers
MGA-43628-TR1G	Broadcom	NARROW BAND HIGH POWER	SURFACE MOUNT	28	PLASTIC/EPOXY	GAAS	3			600 mA		5	LCC28,.2SQ,20		RF/Microwave Amplifiers
MGA-43428-BLKG	Broadcom	NARROW BAND HIGH POWER	SURFACE MOUNT	28	PLASTIC/EPOXY	GAAS	1			560 mA		5	LCC28,.2SQ,20		RF/Microwave Amplifiers
MGA-43428-TR1G	Broadcom	NARROW BAND HIGH POWER	SURFACE MOUNT	28	PLASTIC/EPOXY	GAAS	1			560 mA		5	LCC28,.2SQ,20		RF/Microwave Amplifiers
MGA-43528-BLKG	Broadcom	NARROW BAND HIGH POWER	SURFACE MOUNT	28	PLASTIC/EPOXY	GAAS	3	20 dBm		600 mA	COMPONENT	5	LCC28,.2SQ,20		RF/Microwave Amplifiers		38 dB					1930 MHz	1995 MHz
MGA-43528-TR1G	Broadcom	NARROW BAND HIGH POWER	SURFACE MOUNT	28	PLASTIC/EPOXY	GAAS	3	20 dBm		600 mA	COMPONENT	5	LCC28,.2SQ,20		RF/Microwave Amplifiers		38 dB					1930 MHz	1995 MHz
PTMA210152MV1AUMA1	Infineon Technologies	NARROW BAND HIGH POWER	SURFACE MOUNT	20	PLASTIC/EPOXY		1	15 dBm	10		COMPONENT	28	SOP20,.56	50 ohm			27.5 dB					1800 MHz	2200 MHz
MGA-43728-BLKG	Broadcom	NARROW BAND HIGH POWER	SURFACE MOUNT	28	PLASTIC/EPOXY	GAAS	1			600 mA		5	LCC28,.2SQ,20		RF/Microwave Amplifiers
MGA-43728-TR1G	Broadcom	NARROW BAND HIGH POWER	SURFACE MOUNT	28	PLASTIC/EPOXY	GAAS	1			600 mA		5	LCC28,.2SQ,20		RF/Microwave Amplifiers
MGA-43328-BLKG	Broadcom	NARROW BAND HIGH POWER	SURFACE MOUNT	28	PLASTIC/EPOXY	GAAS	1	20 dBm			COMPONENT	5	LCC28,.2SQ,20	50 ohm	RF/Microwave Amplifiers		35 dB		Tin (Sn)		e3	2500 MHz	2700 MHz
MGA-43328-TR1G	Broadcom	NARROW BAND HIGH POWER	SURFACE MOUNT	28	PLASTIC/EPOXY	GAAS	1	20 dBm			COMPONENT	5	LCC28,.2SQ,20	50 ohm	RF/Microwave Amplifiers		35 dB		Tin (Sn)		e3	2500 MHz	2700 MHz
BGF802-20,127	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID	1	20 dBm	2	320 mA	COMPONENT	26	FLNG,1.6"H.SPACE	50 ohm	RF/Microwave Amplifiers	90 Cel	28 dB	-20 Cel				869 MHz	894 MHz
BGF944,127	NXP Semiconductors	NARROW BAND HIGH POWER			METAL		1	20 dBm	2	300 mA	COMPONENT	26	FLNG,1.6"H.SPACE	50 ohm	RF/Microwave Amplifiers	90 Cel	27 dB	-20 Cel				920 MHz	960 MHz
BGY68,112	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		6.25 dBm		135 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	29.2 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		5 MHz	75 MHz
MGA-43228-BLKG	Broadcom	NARROW BAND HIGH POWER	SURFACE MOUNT	28	PLASTIC/EPOXY	GAAS	1	20 dBm			COMPONENT	5	LCC28,.2SQ,20		RF/Microwave Amplifiers		35 dB		Tin (Sn)		e3	2300 MHz	2500 MHz
MGA-43228-TR1G	Broadcom	NARROW BAND HIGH POWER	SURFACE MOUNT	28	PLASTIC/EPOXY	GAAS	1	20 dBm			COMPONENT	5	LCC28,.2SQ,20		RF/Microwave Amplifiers		35 dB		Tin (Sn)		e3	2300 MHz	2500 MHz
AFIC31025GNR1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	17	PLASTIC/EPOXY	LDMOS	2	20 dBm	10		COMPONENT	28		50 ohm		150 Cel	30.5 dB	-40 Cel	TIN		e3	2400 MHz	3100 MHz
A3I20X050GNR1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	7	PLASTIC/EPOXY	LDMOS	1	20 dBm			COMPONENT	2.15/28		50 ohm		150 Cel	28 dB	-40 Cel	TIN		e3	1800 MHz	2200 MHz
A2I20D040GNR1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	17	PLASTIC/EPOXY	LDMOS	1	18 dBm	10		COMPONENT	28		50 ohm		150 Cel	31.5 dB	-40 Cel	TIN		e3	1400 MHz	2200 MHz
A2I20D040NR1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	17	PLASTIC/EPOXY	LDMOS	1	18 dBm	10		COMPONENT	28		50 ohm		150 Cel	31.5 dB	-40 Cel	TIN		e3	1400 MHz	2200 MHz
MMRF2010GNR1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	14	PLASTIC/EPOXY	LDMOS	1	25 dBm	10		COMPONENT	50		50 ohm		150 Cel	30.5 dB	-55 Cel	TIN		e3	1030 MHz	1090 MHz
MMRF2010NR1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	14	PLASTIC/EPOXY	LDMOS	1	25 dBm	10		COMPONENT	50		50 ohm		150 Cel	30.5 dB	-55 Cel	TIN		e3	1030 MHz	1090 MHz
A2I35H060GNR1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	17	PLASTIC/EPOXY	LDMOS	1	26 dBm	10		COMPONENT	28		50 ohm		150 Cel	23 dB	-40 Cel	TIN		e3	3400 MHz	3800 MHz
A2I35H060NR1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	17	PLASTIC/EPOXY	LDMOS	1	26 dBm	10		COMPONENT	28		50 ohm		150 Cel	23 dB	-40 Cel	TIN		e3	3400 MHz	3800 MHz
PTMA210452ELV1XWSA1	Infineon Technologies	NARROW BAND HIGH POWER						25 dBm	10		MODULE			50 ohm			26.5 dB					1900 MHz	2200 MHz
AFIC31025NR1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	17	PLASTIC/EPOXY	LDMOS	2	20 dBm	10		COMPONENT	28		50 ohm		150 Cel	30.5 dB	-40 Cel	TIN		e3	2400 MHz	3100 MHz
A3I35D025WGNR1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	17	PLASTIC/EPOXY	LDMOS	1	28 dBm	10		COMPONENT	28		50 ohm		150 Cel	26.5 dB	-40 Cel				3200 MHz	4000 MHz
A3I35D025WNR1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	17	PLASTIC/EPOXY	LDMOS	1	28 dBm	10		COMPONENT	28		50 ohm		150 Cel	26.5 dB	-40 Cel	TIN		e3	3200 MHz	4000 MHz
A3I20X050NR1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	7	PLASTIC/EPOXY	LDMOS	1	20 dBm			COMPONENT	2.15/28		50 ohm		150 Cel	28 dB	-40 Cel	TIN		e3	1800 MHz	2200 MHz
ADPA1105ACGZN	Analog Devices	NARROW BAND HIGH POWER	SURFACE MOUNT	32		GAN	1	30 dBm	1.5		COMPONENT	50	LCC32,.2SQ,20	50 ohm		85 Cel	30.5 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	900 MHz	1600 MHz
ADPA1105ACGZN-R7	Analog Devices	NARROW BAND HIGH POWER	SURFACE MOUNT	32		GAN	1	30 dBm	1.5		COMPONENT	50	LCC32,.2SQ,20	50 ohm		85 Cel	30.5 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	900 MHz	1600 MHz
AFSC5G40E38T2	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	26	PLASTIC/EPOXY	LDMOS	1				COMPONENT	28	LCC26,.24X.4,40	50 ohm		125 Cel	27.1 dB					3700 MHz	4000 MHz
AFSC5G35E38T2	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	26	PLASTIC/EPOXY	LDMOS	1				COMPONENT	30	LCC26,.24X.4,40	50 ohm		125 Cel	29.3 dB		NICKEL PALLADIUM GOLD		e4	3400 MHz	3700 MHz
A3M35TL039T2	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	26	PLASTIC/EPOXY	LDMOS	1				COMPONENT	26	LCC26,.24X.4,40	50 ohm		125 Cel	26.5 dB			I/P POWER-MAX (PEAK)=25DBM		3300 MHz	3700 MHz
A3M37TL039T2	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	26	PLASTIC/EPOXY	LDMOS	1				COMPONENT	26	LCC26,.24X.4,40	50 ohm		125 Cel	26.1 dB		NICKEL PALLADIUM GOLD	I/P POWER-MAX (PEAK)=25DBM	e4	3600 MHz	3800 MHz
AFSC5G23E37T2	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	26	PLASTIC/EPOXY	LDMOS	1				COMPONENT	28	LCC26,.24X.4,20	50 ohm		125 Cel	32 dB			I/P POWER-MAX (PEAK)=25DBM		2300 MHz	2400 MHz
A3M34TL139T2	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	26	PLASTIC/EPOXY	LDMOS	1				COMPONENT	27	LCC26,.24X.4,20	50 ohm		125 Cel	25.6 dB			I/P POWER-MAX (PEAK)=25DBM		3300 MHz	3580 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.