NARROW BAND LOW POWER RF & Microwave Amplifiers 38

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Part RoHS Manufacturer RF or Microwave Device Type Mounting Feature No. of Terminals Package Body Material Technology Screening Level Total Dose (V) Maximum Supply Voltage No. of Functions Maximum Input Power (CW) Maximum Voltage Standing Wave Ratio Maximum Supply Current Construction Power Supplies (V) Package Equivalence Code Characteristic Impedance Sub-Category Maximum Operating Temperature Gain Minimum Operating Temperature Terminal Finish Additional Features JESD-609 Code Minimum Operating Frequency Maximum Operating Frequency

SKY67107-306LF

Skyworks Solutions

NARROW BAND LOW POWER

15 dBm

COMPONENT

85 Cel

29 dB

-40 Cel

2300 MHz

2800 MHz

BGA231L7E6327XTSA1

Infineon Technologies

NARROW BAND LOW POWER

0 dBm

COMPONENT

50 ohm

85 Cel

16 dB

-40 Cel

1550 MHz

1615 MHz

BGA231N7E6327XTSA2

Infineon Technologies

NARROW BAND LOW POWER

0 dBm

COMPONENT

50 ohm

85 Cel

16 dB

-40 Cel

Tin (Sn)

e3

1550 MHz

1615 MHz

MAX2655EXT-T

Maxim Integrated

NARROW BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

5 dBm

11.1 mA

COMPONENT

2.7/5

TSSOP6,.08

50 ohm

RF/Microwave Amplifiers

85 Cel

12 dB

-40 Cel

TIN LEAD

e0

1400 MHz

1700 MHz

MAX2656EXT-T

Maxim Integrated

NARROW BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

5 dBm

15.2 mA

COMPONENT

2.7/5

TSSOP6,.08

50 ohm

RF/Microwave Amplifiers

85 Cel

12 dB

-40 Cel

TIN LEAD

e0

1800 MHz

2000 MHz

ACPM-7381-OR1

Broadcom

NARROW BAND LOW POWER

SURFACE MOUNT

10

PLASTIC/EPOXY

1

10 dBm

2

560 mA

COMPONENT

3.4

SOLCC10,.16,32

50 ohm

RF/Microwave Amplifiers

90 Cel

13 dB

-20 Cel

Gold (Au)

e4

1920 MHz

1980 MHz

ACPM-7311-BLKR

Broadcom

NARROW BAND LOW POWER

SURFACE MOUNT

10

PLASTIC/EPOXY

1

10 dBm

10

525 mA

COMPONENT

3.4

SOLCC10,.16,32

50 ohm

RF/Microwave Amplifiers

90 Cel

11.5 dB

-20 Cel

Gold (Au)

e4

824 MHz

849 MHz

MGA-68563-BLKG

Broadcom

NARROW BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

GAAS

1

21 dBm

16 mA

COMPONENT

3

TSSOP6,.08

50 ohm

RF/Microwave Amplifiers

18 dB

Tin (Sn)

e3

MGA-68563-TR1G

Broadcom

NARROW BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

GAAS

1

21 dBm

16 mA

COMPONENT

3

TSSOP6,.08

50 ohm

RF/Microwave Amplifiers

18 dB

Tin (Sn)

e3

MGA-68563-TR2G

Broadcom

NARROW BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

GAAS

1

21 dBm

16 mA

COMPONENT

3

TSSOP6,.08

50 ohm

RF/Microwave Amplifiers

18 dB

Tin (Sn)

e3

MAX2244EBL

Maxim Integrated

NARROW BAND LOW POWER

10 dBm

6

COMPONENT

50 ohm

70 Cel

0 Cel

TIN LEAD

e0

2400 MHz

2500 MHz

ALM-2812-BLKG

Broadcom

NARROW BAND LOW POWER

SURFACE MOUNT

12

PLASTIC/EPOXY

GAAS

2

5 dBm

31 mA

COMPONENT

3.3

LCC12,.12SQ,25

50 ohm

RF/Microwave Amplifiers

15 dB

CMOS COMPATIBLE

2400 MHz

2500 MHz

ALM-2812-TR1G

Broadcom

NARROW BAND LOW POWER

SURFACE MOUNT

12

PLASTIC/EPOXY

GAAS

2

5 dBm

31 mA

COMPONENT

3.3

LCC12,.12SQ,25

50 ohm

RF/Microwave Amplifiers

15 dB

CMOS COMPATIBLE

2400 MHz

2500 MHz

ALM-1322-BLKG

Broadcom

NARROW BAND LOW POWER

22

PLASTIC/EPOXY

2

22 dBm

115 mA

COMPONENT

5

MODULE,22LEAD,0.25

50 ohm

RF/Microwave Amplifiers

28.5 dB

LOW NOISE

1800 MHz

2200 MHz

ALM-1322-TR2G

Broadcom

NARROW BAND LOW POWER

22

PLASTIC/EPOXY

2

22 dBm

115 mA

COMPONENT

5

MODULE,22LEAD,0.25

50 ohm

RF/Microwave Amplifiers

28.5 dB

LOW NOISE

1800 MHz

2200 MHz

ACPM-7311-BLK

Broadcom

NARROW BAND LOW POWER

SURFACE MOUNT

10

PLASTIC/EPOXY

1

10 dBm

2

525 mA

COMPONENT

3.4

SOLCC10,.16,32

50 ohm

RF/Microwave Amplifiers

90 Cel

23.5 dB

-20 Cel

824 MHz

849 MHz

MAX2373ETC

Maxim Integrated

NARROW BAND LOW POWER

SURFACE MOUNT

12

PLASTIC/EPOXY

1

5 dBm

5.5 mA

COMPONENT

2.7

LCC12,.12SQ,20

50 ohm

RF/Microwave Amplifiers

85 Cel

10.5 dB

-40 Cel

TIN LEAD

e0

850 MHz

940 MHz

UPC8236T6N-E2-A

Renesas Electronics

NARROW BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

1

10 dBm

8 mA

COMPONENT

2.7

SOLCC6,.06,20

RF/Microwave Amplifiers

85 Cel

17 dB

-40 Cel

BGA2001,115

NXP Semiconductors

NARROW BAND LOW POWER

COMPONENT

50 ohm

19.5 dB

Tin (Sn)

LOW NOISE

e3

900 MHz

1800 MHz

BGA2011,115

NXP Semiconductors

NARROW BAND LOW POWER

COMPONENT

50 ohm

15 dB

Tin (Sn)

e3

BGA2012,115

NXP Semiconductors

NARROW BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

1

10 mA

COMPONENT

3

TSSOP6,.08

50 ohm

RF/Microwave Amplifiers

150 Cel

14 dB

Tin (Sn)

e3

MAX2371EGC

Maxim Integrated

NARROW BAND LOW POWER

SURFACE MOUNT

12

CERAMIC

1

5 dBm

5.5 mA

COMPONENT

2.7

LCC12,.12SQ,20

50 ohm

RF/Microwave Amplifiers

85 Cel

10.5 dB

-40 Cel

Tin/Lead (Sn85Pb15)

e0

136 MHz

174 MHz

AMF-4F-02200230-15-13P

L-3 Narda-miteq

NARROW BAND LOW POWER

1.5

COAXIAL

58 dB

SMA-F

2200 MHz

2300 MHz

MAX2373EGC-T

Maxim Integrated

NARROW BAND LOW POWER

SURFACE MOUNT

12

CERAMIC

1

5 dBm

5.5 mA

COMPONENT

2.7

LCC12,.12SQ,20

50 ohm

RF/Microwave Amplifiers

85 Cel

10.5 dB

-40 Cel

Tin/Lead (Sn/Pb)

e0

850 MHz

940 MHz

CC2590RGVT

Texas Instruments

NARROW BAND LOW POWER

SURFACE MOUNT

16

PLASTIC/EPOXY

1

10 dBm

COMPONENT

3

85 Cel

14.1 dB

-40 Cel

NICKEL PALLADIUM GOLD

LOW NOISE

e4

2400 MHz

2483.5 MHz

WS1103-TR1

Broadcom

NARROW BAND LOW POWER

SURFACE MOUNT

8

PLASTIC/EPOXY

1

10 dBm

2.5

515 mA

COMPONENT

3.4

SOLCC8,.11,32

50 ohm

RF/Microwave Amplifiers

85 Cel

14 dB

-30 Cel

824 MHz

849 MHz

CC2590RGVRG4

Texas Instruments

NARROW BAND LOW POWER

SURFACE MOUNT

16

PLASTIC/EPOXY

1

10 dBm

COMPONENT

3

85 Cel

14.1 dB

-40 Cel

NICKEL PALLADIUM GOLD

LOW NOISE

e4

2400 MHz

2483.5 MHz

ALM-1712-BLKG

Broadcom

NARROW BAND LOW POWER

12

PLASTIC/EPOXY

1

15 dBm

15 mA

COMPONENT

1.8/2.7

MODULE,12LEAD(UNSPEC)

50 ohm

RF/Microwave Amplifiers

11 dB

LOW NOISE

ALM-1712-TR1G

Broadcom

NARROW BAND LOW POWER

12

PLASTIC/EPOXY

1

15 dBm

15 mA

COMPONENT

1.8/2.7

MODULE,12LEAD(UNSPEC)

50 ohm

RF/Microwave Amplifiers

11 dB

LOW NOISE

SKY67100-396LF

Skyworks Solutions

NARROW BAND LOW POWER

20 dBm

COMPONENT

50 ohm

85 Cel

16.1 dB

-40 Cel

1200 MHz

3000 MHz

HMC716ALP3ETR

Analog Devices

NARROW BAND LOW POWER

SURFACE MOUNT

16

PLASTIC/EPOXY

GAAS

1

10 dBm

1.38

90 mA

COMPONENT

3,5

LCC16,.12SQ,20

50 ohm

85 Cel

15.5 dB

-40 Cel

3100 MHz

3900 MHz

BGA428H6327XTSA1

Infineon Technologies

NARROW BAND LOW POWER

8 dBm

COMPONENT

50 ohm

85 Cel

20 dB

-40 Cel

BGA715L7E6327XTSA1

Infineon Technologies

NARROW BAND LOW POWER

10 dBm

COMPONENT

50 ohm

85 Cel

20 dB

-40 Cel

LOW NOISE

BGA751L7E6327XTSA1

Infineon Technologies

NARROW BAND LOW POWER

4 dBm

COMPONENT

50 ohm

85 Cel

15.8 dB

-30 Cel

LOW NOISE

875 MHz

885 MHz

HMC716ALP3E

Analog Devices

NARROW BAND LOW POWER

SURFACE MOUNT

16

PLASTIC/EPOXY

GAAS

1

10 dBm

1.38

90 mA

COMPONENT

3,5

LCC16,.12SQ,20

50 ohm

85 Cel

15.5 dB

-40 Cel

3100 MHz

3900 MHz

HMC618ALP3E

Analog Devices

NARROW BAND LOW POWER

SURFACE MOUNT

16

PLASTIC/EPOXY

PHEMT

1

10 dBm

65 mA

COMPONENT

5

LCC16,.12SQ,20

50 ohm

85 Cel

12.5 dB

-40 Cel

MATTE TIN

e3

1200 MHz

2200 MHz

BGA748N16E6327

Infineon Technologies

NARROW BAND LOW POWER

4 dBm

COMPONENT

50 ohm

85 Cel

18 dB

-30 Cel

LOW NOISE, IT CAN ALSO OPERATE AT 925-960 MHZ,1930-1990 MHZ AND 2110-2170 MHZ

2110 MHz

2170 MHz

MMZ38333BT1

NXP Semiconductors

NARROW BAND LOW POWER

SURFACE MOUNT

24

PLASTIC/EPOXY

HYBRID

1

30 dBm

1.58

1200 mA

COMPONENT

5

LCC24,.16SQ,20

50 ohm

36.3 dB

TIN

e3

3400 MHz

3800 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.