| Part | RoHS | Manufacturer | RF or Microwave Device Type | Mounting Feature | No. of Terminals | Package Body Material | Technology | Screening Level | Total Dose (V) | Maximum Supply Voltage | No. of Functions | Maximum Input Power (CW) | Maximum Voltage Standing Wave Ratio | Maximum Supply Current | Construction | Power Supplies (V) | Package Equivalence Code | Characteristic Impedance | Sub-Category | Maximum Operating Temperature | Gain | Minimum Operating Temperature | Terminal Finish | Additional Features | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
Skyworks Solutions |
NARROW BAND LOW POWER |
15 dBm |
COMPONENT |
85 Cel |
29 dB |
-40 Cel |
2300 MHz |
2800 MHz |
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|
Infineon Technologies |
NARROW BAND LOW POWER |
0 dBm |
COMPONENT |
50 ohm |
85 Cel |
16 dB |
-40 Cel |
1550 MHz |
1615 MHz |
||||||||||||||||||
|
|
Infineon Technologies |
NARROW BAND LOW POWER |
0 dBm |
COMPONENT |
50 ohm |
85 Cel |
16 dB |
-40 Cel |
Tin (Sn) |
e3 |
1550 MHz |
1615 MHz |
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|
Maxim Integrated |
NARROW BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
5 dBm |
11.1 mA |
COMPONENT |
2.7/5 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
12 dB |
-40 Cel |
TIN LEAD |
e0 |
1400 MHz |
1700 MHz |
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|
Maxim Integrated |
NARROW BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
5 dBm |
15.2 mA |
COMPONENT |
2.7/5 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
12 dB |
-40 Cel |
TIN LEAD |
e0 |
1800 MHz |
2000 MHz |
||||||||
|
|
Broadcom |
NARROW BAND LOW POWER |
SURFACE MOUNT |
10 |
PLASTIC/EPOXY |
1 |
10 dBm |
2 |
560 mA |
COMPONENT |
3.4 |
SOLCC10,.16,32 |
50 ohm |
RF/Microwave Amplifiers |
90 Cel |
13 dB |
-20 Cel |
Gold (Au) |
e4 |
1920 MHz |
1980 MHz |
||||||
|
|
Broadcom |
NARROW BAND LOW POWER |
SURFACE MOUNT |
10 |
PLASTIC/EPOXY |
1 |
10 dBm |
10 |
525 mA |
COMPONENT |
3.4 |
SOLCC10,.16,32 |
50 ohm |
RF/Microwave Amplifiers |
90 Cel |
11.5 dB |
-20 Cel |
Gold (Au) |
e4 |
824 MHz |
849 MHz |
||||||
|
|
Broadcom |
NARROW BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
21 dBm |
16 mA |
COMPONENT |
3 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
18 dB |
Tin (Sn) |
e3 |
||||||||||
|
|
Broadcom |
NARROW BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
21 dBm |
16 mA |
COMPONENT |
3 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
18 dB |
Tin (Sn) |
e3 |
||||||||||
|
|
Broadcom |
NARROW BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
21 dBm |
16 mA |
COMPONENT |
3 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
18 dB |
Tin (Sn) |
e3 |
||||||||||
|
Maxim Integrated |
NARROW BAND LOW POWER |
10 dBm |
6 |
COMPONENT |
50 ohm |
70 Cel |
0 Cel |
TIN LEAD |
e0 |
2400 MHz |
2500 MHz |
||||||||||||||||
|
|
Broadcom |
NARROW BAND LOW POWER |
SURFACE MOUNT |
12 |
PLASTIC/EPOXY |
GAAS |
2 |
5 dBm |
31 mA |
COMPONENT |
3.3 |
LCC12,.12SQ,25 |
50 ohm |
RF/Microwave Amplifiers |
15 dB |
CMOS COMPATIBLE |
2400 MHz |
2500 MHz |
|||||||||
|
|
Broadcom |
NARROW BAND LOW POWER |
SURFACE MOUNT |
12 |
PLASTIC/EPOXY |
GAAS |
2 |
5 dBm |
31 mA |
COMPONENT |
3.3 |
LCC12,.12SQ,25 |
50 ohm |
RF/Microwave Amplifiers |
15 dB |
CMOS COMPATIBLE |
2400 MHz |
2500 MHz |
|||||||||
|
|
Broadcom |
NARROW BAND LOW POWER |
22 |
PLASTIC/EPOXY |
2 |
22 dBm |
115 mA |
COMPONENT |
5 |
MODULE,22LEAD,0.25 |
50 ohm |
RF/Microwave Amplifiers |
28.5 dB |
LOW NOISE |
1800 MHz |
2200 MHz |
|||||||||||
|
|
Broadcom |
NARROW BAND LOW POWER |
22 |
PLASTIC/EPOXY |
2 |
22 dBm |
115 mA |
COMPONENT |
5 |
MODULE,22LEAD,0.25 |
50 ohm |
RF/Microwave Amplifiers |
28.5 dB |
LOW NOISE |
1800 MHz |
2200 MHz |
|||||||||||
|
|
Broadcom |
NARROW BAND LOW POWER |
SURFACE MOUNT |
10 |
PLASTIC/EPOXY |
1 |
10 dBm |
2 |
525 mA |
COMPONENT |
3.4 |
SOLCC10,.16,32 |
50 ohm |
RF/Microwave Amplifiers |
90 Cel |
23.5 dB |
-20 Cel |
824 MHz |
849 MHz |
||||||||
|
Maxim Integrated |
NARROW BAND LOW POWER |
SURFACE MOUNT |
12 |
PLASTIC/EPOXY |
1 |
5 dBm |
5.5 mA |
COMPONENT |
2.7 |
LCC12,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
10.5 dB |
-40 Cel |
TIN LEAD |
e0 |
850 MHz |
940 MHz |
||||||||
|
|
Renesas Electronics |
NARROW BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
10 dBm |
8 mA |
COMPONENT |
2.7 |
SOLCC6,.06,20 |
RF/Microwave Amplifiers |
85 Cel |
17 dB |
-40 Cel |
|||||||||||
|
|
NXP Semiconductors |
NARROW BAND LOW POWER |
COMPONENT |
50 ohm |
19.5 dB |
Tin (Sn) |
LOW NOISE |
e3 |
900 MHz |
1800 MHz |
|||||||||||||||||
|
|
NXP Semiconductors |
NARROW BAND LOW POWER |
COMPONENT |
50 ohm |
15 dB |
Tin (Sn) |
e3 |
||||||||||||||||||||
|
|
NXP Semiconductors |
NARROW BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
10 mA |
COMPONENT |
3 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
150 Cel |
14 dB |
Tin (Sn) |
e3 |
||||||||||
|
Maxim Integrated |
NARROW BAND LOW POWER |
SURFACE MOUNT |
12 |
CERAMIC |
1 |
5 dBm |
5.5 mA |
COMPONENT |
2.7 |
LCC12,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
10.5 dB |
-40 Cel |
Tin/Lead (Sn85Pb15) |
e0 |
136 MHz |
174 MHz |
||||||||
|
L-3 Narda-miteq |
NARROW BAND LOW POWER |
1.5 |
COAXIAL |
58 dB |
SMA-F |
2200 MHz |
2300 MHz |
||||||||||||||||||||
|
Maxim Integrated |
NARROW BAND LOW POWER |
SURFACE MOUNT |
12 |
CERAMIC |
1 |
5 dBm |
5.5 mA |
COMPONENT |
2.7 |
LCC12,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
10.5 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
850 MHz |
940 MHz |
||||||||
|
|
Texas Instruments |
NARROW BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
1 |
10 dBm |
COMPONENT |
3 |
85 Cel |
14.1 dB |
-40 Cel |
NICKEL PALLADIUM GOLD |
LOW NOISE |
e4 |
2400 MHz |
2483.5 MHz |
||||||||||
|
|
Broadcom |
NARROW BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
1 |
10 dBm |
2.5 |
515 mA |
COMPONENT |
3.4 |
SOLCC8,.11,32 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
14 dB |
-30 Cel |
824 MHz |
849 MHz |
||||||||
|
|
Texas Instruments |
NARROW BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
1 |
10 dBm |
COMPONENT |
3 |
85 Cel |
14.1 dB |
-40 Cel |
NICKEL PALLADIUM GOLD |
LOW NOISE |
e4 |
2400 MHz |
2483.5 MHz |
||||||||||
|
|
Broadcom |
NARROW BAND LOW POWER |
12 |
PLASTIC/EPOXY |
1 |
15 dBm |
15 mA |
COMPONENT |
1.8/2.7 |
MODULE,12LEAD(UNSPEC) |
50 ohm |
RF/Microwave Amplifiers |
11 dB |
LOW NOISE |
|||||||||||||
|
|
Broadcom |
NARROW BAND LOW POWER |
12 |
PLASTIC/EPOXY |
1 |
15 dBm |
15 mA |
COMPONENT |
1.8/2.7 |
MODULE,12LEAD(UNSPEC) |
50 ohm |
RF/Microwave Amplifiers |
11 dB |
LOW NOISE |
|||||||||||||
|
|
Skyworks Solutions |
NARROW BAND LOW POWER |
20 dBm |
COMPONENT |
50 ohm |
85 Cel |
16.1 dB |
-40 Cel |
1200 MHz |
3000 MHz |
|||||||||||||||||
|
|
Analog Devices |
NARROW BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
10 dBm |
1.38 |
90 mA |
COMPONENT |
3,5 |
LCC16,.12SQ,20 |
50 ohm |
85 Cel |
15.5 dB |
-40 Cel |
3100 MHz |
3900 MHz |
||||||||
|
|
Infineon Technologies |
NARROW BAND LOW POWER |
8 dBm |
COMPONENT |
50 ohm |
85 Cel |
20 dB |
-40 Cel |
|||||||||||||||||||
|
|
Infineon Technologies |
NARROW BAND LOW POWER |
10 dBm |
COMPONENT |
50 ohm |
85 Cel |
20 dB |
-40 Cel |
LOW NOISE |
||||||||||||||||||
|
Infineon Technologies |
NARROW BAND LOW POWER |
4 dBm |
COMPONENT |
50 ohm |
85 Cel |
15.8 dB |
-30 Cel |
LOW NOISE |
875 MHz |
885 MHz |
|||||||||||||||||
|
|
Analog Devices |
NARROW BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
10 dBm |
1.38 |
90 mA |
COMPONENT |
3,5 |
LCC16,.12SQ,20 |
50 ohm |
85 Cel |
15.5 dB |
-40 Cel |
3100 MHz |
3900 MHz |
||||||||
|
|
Analog Devices |
NARROW BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
PHEMT |
1 |
10 dBm |
65 mA |
COMPONENT |
5 |
LCC16,.12SQ,20 |
50 ohm |
85 Cel |
12.5 dB |
-40 Cel |
MATTE TIN |
e3 |
1200 MHz |
2200 MHz |
|||||||
|
Infineon Technologies |
NARROW BAND LOW POWER |
4 dBm |
COMPONENT |
50 ohm |
85 Cel |
18 dB |
-30 Cel |
LOW NOISE, IT CAN ALSO OPERATE AT 925-960 MHZ,1930-1990 MHZ AND 2110-2170 MHZ |
2110 MHz |
2170 MHz |
|||||||||||||||||
|
|
NXP Semiconductors |
NARROW BAND LOW POWER |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
HYBRID |
1 |
30 dBm |
1.58 |
1200 mA |
COMPONENT |
5 |
LCC24,.16SQ,20 |
50 ohm |
36.3 dB |
TIN |
e3 |
3400 MHz |
3800 MHz |
RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.
The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.
RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.