| Part | RoHS | Manufacturer | RF or Microwave Device Type | Mounting Feature | No. of Terminals | Package Body Material | Technology | Screening Level | Total Dose (V) | Maximum Supply Voltage | No. of Functions | Maximum Input Power (CW) | Maximum Voltage Standing Wave Ratio | Maximum Supply Current | Construction | Power Supplies (V) | Package Equivalence Code | Characteristic Impedance | Sub-Category | Maximum Operating Temperature | Gain | Minimum Operating Temperature | Terminal Finish | Additional Features | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
Broadcom |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
15 dBm |
COMPONENT |
3.3 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
31 dB |
-40 Cel |
CMOS COMPATIBLE |
2500 MHz |
2700 MHz |
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|
|
Broadcom |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
GAAS |
1 |
5,28 |
LCC24(UNSPEC) |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
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|
|
Broadcom |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
GAAS |
1 |
5,28 |
LCC24(UNSPEC) |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
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|
|
Broadcom |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
GAAS |
1 |
5,28 |
LCC24(UNSPEC) |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
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|
|
Broadcom |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
2 |
27 dBm |
130 mA |
COMPONENT |
4.8 |
LCC16,.16SQ,25 |
RF/Microwave Amplifiers |
17.2 dB |
1440 MHz |
2350 MHz |
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|
|
Broadcom |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
2 |
27 dBm |
130 mA |
COMPONENT |
4.8 |
LCC16,.16SQ,25 |
RF/Microwave Amplifiers |
17.2 dB |
1440 MHz |
2350 MHz |
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|
|
Broadcom |
NARROW BAND MEDIUM POWER |
PLASTIC/EPOXY |
GAAS |
1 |
28 dBm |
910 mA |
COMPONENT |
5 |
MODULE(UNSPEC) |
50 ohm |
RF/Microwave Amplifiers |
11.2 dB |
3300 MHz |
3900 MHz |
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|
|
Broadcom |
NARROW BAND MEDIUM POWER |
PLASTIC/EPOXY |
GAAS |
1 |
28 dBm |
910 mA |
COMPONENT |
5 |
MODULE(UNSPEC) |
50 ohm |
RF/Microwave Amplifiers |
11.2 dB |
3300 MHz |
3900 MHz |
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|
|
Broadcom |
NARROW BAND MEDIUM POWER |
PLASTIC/EPOXY |
GAAS |
1 |
28 dBm |
910 mA |
COMPONENT |
5 |
MODULE(UNSPEC) |
50 ohm |
RF/Microwave Amplifiers |
11.2 dB |
3300 MHz |
3900 MHz |
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|
|
Renesas Electronics |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
12 |
PLASTIC/EPOXY |
1 |
10 dBm |
130 mA |
COMPONENT |
3.3 |
LCC12,.08SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
19 dB |
-40 Cel |
2400 MHz |
2500 MHz |
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|
|
Broadcom |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
1 |
20 dBm |
61 mA |
COMPONENT |
5 |
SOLCC8,.08,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
16.1 dB |
-40 Cel |
Tin (Sn) |
e3 |
1500 MHz |
2300 MHz |
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|
|
Broadcom |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
1 |
20 dBm |
61 mA |
COMPONENT |
5 |
SOLCC8,.08,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
16.1 dB |
-40 Cel |
Tin (Sn) |
e3 |
1500 MHz |
2300 MHz |
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|
Maxim Integrated |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
1 |
10 dBm |
1.5 |
COMPONENT |
3/5 |
SSOP16,.25 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
23.9 dB |
-40 Cel |
TIN LEAD |
IT CAN ALSO OPERATE AT 800 TO 1000 MHZ |
e0 |
800 MHz |
1000 MHz |
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|
Maxim Integrated |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
10 dBm |
1.5 |
COMPONENT |
3/5 |
SSOP16,.25 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
23.9 dB |
-40 Cel |
TIN LEAD |
IT CAN ALSO OPERATE AT 800 TO 1000 MHZ |
e0 |
800 MHz |
1000 MHz |
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|
Maxim Integrated |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
20 |
PLASTIC/EPOXY |
1 |
115 mA |
COMPONENT |
9 |
TSSOP20,.25 |
75 ohm |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
Tin/Lead (Sn85Pb15) |
e0 |
5 MHz |
65 MHz |
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|
|
Broadcom |
NARROW BAND MEDIUM POWER |
1 |
10 dBm |
160 mA |
COAXIAL |
4 |
DIE OR CHIP |
RF/Microwave Amplifiers |
20 dB |
7000 MHz |
21000 MHz |
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|
|
Broadcom |
NARROW BAND MEDIUM POWER |
1 |
10 dBm |
160 mA |
COAXIAL |
4 |
DIE OR CHIP |
RF/Microwave Amplifiers |
20 dB |
7000 MHz |
21000 MHz |
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|
|
Broadcom |
NARROW BAND MEDIUM POWER |
1 |
15 dBm |
150 mA |
COAXIAL |
4 |
DIE OR CHIP |
RF/Microwave Amplifiers |
23 dB |
18000 MHz |
32000 MHz |
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|
|
Analog Devices |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
18 dBm |
COMPONENT |
5 |
SOLCC8,.11,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
17.5 dB |
-40 Cel |
Matte Tin (Sn) |
TAPE AND REEL |
e3 |
1700 MHz |
2400 MHz |
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|
|
Broadcom |
NARROW BAND MEDIUM POWER |
22 |
PLASTIC/EPOXY |
GAAS |
1 |
22 dBm |
COMPONENT |
5 |
MODULE,22LEAD,0.25 |
50 ohm |
RF/Microwave Amplifiers |
29.5 dB |
LOW NOISE |
1800 MHz |
2200 MHz |
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|
|
Broadcom |
NARROW BAND MEDIUM POWER |
22 |
PLASTIC/EPOXY |
GAAS |
1 |
22 dBm |
COMPONENT |
5 |
MODULE,22LEAD,0.25 |
50 ohm |
RF/Microwave Amplifiers |
29.5 dB |
LOW NOISE |
1800 MHz |
2200 MHz |
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|
|
Broadcom |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
PLASTIC/EPOXY |
GAAS |
1 |
12 dBm |
6 |
240 mA |
COMPONENT |
3.3 |
LCC(UNSPEC) |
50 ohm |
RF/Microwave Amplifiers |
28 dB |
2300 MHz |
2700 MHz |
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|
|
Broadcom |
NARROW BAND MEDIUM POWER |
22 |
PLASTIC/EPOXY |
GAAS |
1 |
25 dBm |
480 mA |
COMPONENT |
5 |
MODULE,22LEAD,0.25 |
50 ohm |
RF/Microwave Amplifiers |
11.7 dB |
3300 MHz |
3900 MHz |
|||||||||||
|
|
Broadcom |
NARROW BAND MEDIUM POWER |
22 |
PLASTIC/EPOXY |
GAAS |
1 |
25 dBm |
480 mA |
COMPONENT |
5 |
MODULE,22LEAD,0.25 |
50 ohm |
RF/Microwave Amplifiers |
11.7 dB |
3300 MHz |
3900 MHz |
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|
|
Broadcom |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
PLASTIC/EPOXY |
GAAS |
1 |
12 dBm |
6 |
COMPONENT |
3.3 |
LCC(UNSPEC) |
50 ohm |
RF/Microwave Amplifiers |
27.5 dB |
3300 MHz |
3800 MHz |
|||||||||||
|
|
Broadcom |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
22 dBm |
250 mA |
COMPONENT |
5 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
11 dB |
Tin (Sn) |
e3 |
3300 MHz |
3900 MHz |
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|
NXP Semiconductors |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
1 |
95 mA |
COMPONENT |
12 |
DILCC8,.46 |
75 ohm |
RF/Microwave Amplifiers |
100 Cel |
25 dB |
-20 Cel |
LOW NOISE, HIGH RELIABILITY |
5 MHz |
65 MHz |
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|
|
Broadcom |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
10 |
PLASTIC/EPOXY |
1 |
10 dBm |
2.5 |
580 mA |
MODULE |
3.4 |
SOLCC10,.11,24 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
7 dB |
-20 Cel |
1850 MHz |
1910 MHz |
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|
|
Broadcom |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
10 |
PLASTIC/EPOXY |
1 |
10 dBm |
2.5 |
580 mA |
MODULE |
3.4 |
SOLCC10,.11,24 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
8 dB |
-20 Cel |
1710 MHz |
1785 MHz |
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|
Maxim Integrated |
NARROW BAND MEDIUM POWER |
10 dBm |
1.5 |
COMPONENT |
50 ohm |
85 Cel |
23.9 dB |
-40 Cel |
TIN LEAD |
IT CAN ALSO OPERATE AT 800 TO 1000 MHZ |
e0 |
800 MHz |
1000 MHz |
||||||||||||||
|
Maxim Integrated |
NARROW BAND MEDIUM POWER |
16 dBm |
COMPONENT |
50 ohm |
85 Cel |
12.9 dB |
-40 Cel |
TIN LEAD |
e0 |
3400 MHz |
3800 MHz |
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|
|
Texas Instruments |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
1 |
20 dBm |
700 mA |
COMPONENT |
7 |
LCC32,.2SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
26 dB |
-40 Cel |
Matte Tin (Sn) |
e3 |
2100 MHz |
2700 MHz |
|||||||
|
Maxim Integrated |
NARROW BAND MEDIUM POWER |
20 dBm |
COMPONENT |
50 ohm |
85 Cel |
13.5 dB |
-40 Cel |
TIN LEAD |
e0 |
1700 MHz |
2500 MHz |
||||||||||||||||
|
|
Broadcom |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
15 dBm |
COMPONENT |
3.3 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
32 dB |
-40 Cel |
2300 MHz |
2700 MHz |
|||||||||
|
|
Broadcom |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
15 dBm |
COMPONENT |
3.3 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
32 dB |
-40 Cel |
2300 MHz |
2700 MHz |
|||||||||
|
|
Broadcom |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
15 dBm |
COMPONENT |
3.3 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
32 dB |
-40 Cel |
3300 MHz |
3800 MHz |
|||||||||
|
|
Broadcom |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
15 dBm |
COMPONENT |
3.3 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
32 dB |
-40 Cel |
3300 MHz |
3800 MHz |
|||||||||
|
|
Broadcom |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
15 dBm |
COMPONENT |
3.3 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
27 dB |
-40 Cel |
4900 MHz |
5900 MHz |
|||||||||
|
|
Broadcom |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
15 dBm |
COMPONENT |
3.3 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
27 dB |
-40 Cel |
4900 MHz |
5900 MHz |
|||||||||
|
|
NXP Semiconductors |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
17 |
PLASTIC/EPOXY |
2 |
26 dBm |
COMPONENT |
28 |
FLNG,.72"H.SPACE |
50 ohm |
150 Cel |
26.5 dB |
-40 Cel |
3200 MHz |
4000 MHz |
|||||||||||
|
Infineon Technologies |
NARROW BAND MEDIUM POWER |
10 dBm |
COMPONENT |
50 ohm |
85 Cel |
18 dB |
-30 Cel |
LOW NOISE |
|||||||||||||||||||
|
Infineon Technologies |
NARROW BAND MEDIUM POWER |
4 dBm |
COMPONENT |
50 ohm |
85 Cel |
16.7 dB |
-30 Cel |
LOW NOISE |
2110 MHz |
2155 MHz |
RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.
The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.
RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.