BIPOLAR RF & Microwave Amplifiers 52

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	Screening Level	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
UPC8240T6N-E2-A	Renesas Electronics		SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1			9 mA		1.8/2.7	SOLCC6,.06,20		RF/Microwave Amplifiers	85 Cel		-40 Cel
UPC2763TB-E3-A	Renesas Electronics		SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1			35 mA		3	TSSOP6,.08		RF/Microwave Amplifiers	85 Cel		-40 Cel
BGA420H6327	Infineon Technologies				PLASTIC/EPOXY	BIPOLAR		1			8 mA		3	SOT-343R		RF/Microwave Amplifiers	150 Cel		-65 Cel
BGA2002,115	NXP Semiconductors				PLASTIC/EPOXY	BIPOLAR	AEC-Q100	1					2.5	SOT-343R		RF/Microwave Amplifiers				Tin (Sn)		e3
ACPM-5007-TR1	Broadcom		SURFACE MOUNT	10	PLASTIC/EPOXY	BIPOLAR		1			500 mA		3.4	SOLCC10,.11,24		RF/Microwave Amplifiers	90 Cel		-20 Cel
UPC8232T5N-A	Renesas Electronics		SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1			4.1 mA		3	SOLCC6,.06,20		RF/Microwave Amplifiers	85 Cel		-40 Cel
SST12CP11-QVCE	Microchip Technology		SURFACE MOUNT	16	PLASTIC/EPOXY	BIPOLAR		1					5	LCC16,.12SQ,20		RF/Microwave Amplifiers	85 Cel		-40 Cel
UPC1678GV-A	Renesas Electronics		SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR		1			60 mA		5	SSOP8,.2		RF/Microwave Amplifiers	85 Cel		-45 Cel
CA30063	Harris Semiconductor			12	METAL	BIPOLAR	MIL-STD-883 Class B (Modified)				25 mA		+-6	CAN12,.23		RF/Microwave Amplifiers	125 Cel		-55 Cel	Tin/Lead (Sn/Pb)		e0
MAX2631EUK-T	Maxim Integrated	WIDE BAND LOW POWER	SURFACE MOUNT	5	PLASTIC/EPOXY	BIPOLAR			5 dBm	1.25		COMPONENT	3	TSOP5/6,.11,37	50 ohm	RF/Microwave Amplifiers	85 Cel	11 dB	-40 Cel	TIN LEAD	LOW NOISE	e0	800 MHz	1000 MHz
MAX2632EUK-T	Maxim Integrated	WIDE BAND LOW POWER	SURFACE MOUNT	5	PLASTIC/EPOXY	BIPOLAR			5 dBm	1.25		COMPONENT	3	TSOP5/6,.11,37	50 ohm	RF/Microwave Amplifiers	85 Cel	11 dB	-40 Cel	TIN LEAD	LOW NOISE	e0	800 MHz	1000 MHz
MAX2650EUS-T	Maxim Integrated	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR			13 dBm	1.3	24 mA	COMPONENT	5	TO-253	50 ohm	RF/Microwave Amplifiers	85 Cel	16.5 dB	-40 Cel	TIN LEAD	LOW NOISE	e0	800 MHz	1000 MHz
AVT-54689-BLKG	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR		1	18 dBm		66 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	16 dB	-40 Cel	Tin (Sn)		e3	50 MHz	6000 MHz
AVT-54689-TR1G	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR		1	18 dBm		66 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	16 dB	-40 Cel	Tin (Sn)		e3	50 MHz	6000 MHz
AVT-55689-BLKG	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR		1	18 dBm		86 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	15.5 dB	-40 Cel	Tin (Sn)		e3	50 MHz	6000 MHz
AVT-55689-TR1G	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR		1	18 dBm		86 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	15.5 dB	-40 Cel	Tin (Sn)		e3	50 MHz	6000 MHz
MAX2233EEE	Maxim Integrated	NARROW BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	BIPOLAR		1	10 dBm	1.5		COMPONENT	3/5	SSOP16,.25	50 ohm	RF/Microwave Amplifiers	85 Cel	23.9 dB	-40 Cel	TIN LEAD	IT CAN ALSO OPERATE AT 800 TO 1000 MHZ	e0	800 MHz	1000 MHz
MAX2640EUT-T	Maxim Integrated	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1	5 dBm		5.5 mA	COMPONENT	3/5	TSOP6,.11,37	50 ohm	RF/Microwave Amplifiers	85 Cel	12.8 dB	-40 Cel	TIN LEAD	LOW NOISE	e0	300 MHz	1500 MHz
MAX2641EUT-T	Maxim Integrated	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR			5 dBm		5.5 mA	COMPONENT	3/5	TSOP6,.11,37	50 ohm	RF/Microwave Amplifiers	85 Cel	12.4 dB	-40 Cel	TIN LEAD	LOW NOISE	e0	1400 MHz	2500 MHz
TSH690ID	STMicroelectronics	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR			10 dBm			COMPONENT	2.7	SOP8,.25	50 ohm	RF/Microwave Amplifiers	85 Cel	19 dB	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)		e4	40 MHz	1000 MHz
TSH690IDT	STMicroelectronics	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR		1	10 dBm			COMPONENT	2.7	SOP8,.25	50 ohm	RF/Microwave Amplifiers	85 Cel	19 dB	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)		e4	40 MHz	1000 MHz
MAX2655EXT-T	Maxim Integrated	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR			5 dBm		11.1 mA	COMPONENT	2.7/5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	12 dB	-40 Cel	TIN LEAD		e0	1400 MHz	1700 MHz
MAX2656EXT-T	Maxim Integrated	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR			5 dBm		15.2 mA	COMPONENT	2.7/5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	12 dB	-40 Cel	TIN LEAD		e0	1800 MHz	2000 MHz
ADA-4789-BLKG	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR		1	20 dBm	1.5		COMPONENT	3.8	TO-243	50 ohm	RF/Microwave Amplifiers		15 dB		Matte Tin (Sn)		e3	0 MHz	2500 MHz
ADA-4789-TR1G	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR		1	20 dBm	1.5		COMPONENT	3.8	TO-243	50 ohm	RF/Microwave Amplifiers		15 dB		Matte Tin (Sn)		e3	0 MHz	2500 MHz
UPC8236T6N-E2-A	Renesas Electronics	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1	10 dBm		8 mA	COMPONENT	2.7	SOLCC6,.06,20		RF/Microwave Amplifiers	85 Cel	17 dB	-40 Cel
BGA2003,115	NXP Semiconductors	WIDE BAND LOW POWER			PLASTIC/EPOXY	BIPOLAR		1			15 mA	COMPONENT	2.5	SOT-343R	50 ohm	RF/Microwave Amplifiers		16 dB		Tin (Sn)	LOW NOISE	e3	900 MHz	1800 MHz
BGA2012,115	NXP Semiconductors	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1			10 mA	COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	150 Cel	14 dB		Tin (Sn)		e3
BGA2031/1,115	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR			10 dBm	1.4		COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		23 dB		Tin (Sn)		e3	800 MHz	2500 MHz
BGA2771,115	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1	10 dBm		45 mA	COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		20.8 dB		Tin (Sn)		e3	1000 MHz	2000 MHz
SA5209D,602	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	BIPOLAR					55 mA	COMPONENT	5	SOP16,.25	50 ohm	RF/Microwave Amplifiers	85 Cel		-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)		e4	0 MHz	850 MHz
SA5219D,602	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	BIPOLAR					50 mA	COMPONENT	5	SOP16,.25	50 ohm	RF/Microwave Amplifiers	85 Cel		-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)		e4	0 MHz	700 MHz
BGM1014,115	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1	-10 dBm		25 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	25 dB	-40 Cel	Tin (Sn)	LOW NOISE	e3	100 MHz	3000 MHz
BGM1013,115	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1	-10 dBm		33 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	24 dB	-40 Cel	Tin (Sn)	LOW NOISE	e3	100 MHz	3000 MHz
BGM1012,115	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1	10 dBm		19 mA	COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		16 dB		Tin (Sn)		e3	100 MHz	3000 MHz
BGA2716,115	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1	-10 dBm		21 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		19 dB		Tin (Sn)		e3	100 MHz	3000 MHz
BGA2714,115	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1			5.7 mA	COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		16 dB		Tin (Sn)		e3	0 MHz	2700 MHz
BGA2712,115	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1			15 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		16 dB		Tin (Sn)		e3	100 MHz	3000 MHz
BGA2709,115	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1	10 dBm		32 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		18 dB		Tin (Sn)		e3	100 MHz	3000 MHz
AVT-50663-BLKG	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1	15 dBm		39.5 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	13.8 dB	-40 Cel	Tin (Sn)		e3	0 MHz	6000 MHz
AVT-50663-TR1G	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1	15 dBm		39.5 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	13.8 dB	-40 Cel	Tin (Sn)		e3	0 MHz	6000 MHz
AVT-52663-BLKG	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1	18 dBm		49 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	13.8 dB	-40 Cel	Tin (Sn)		e3	0 MHz	6000 MHz
AVT-52663-TR1G	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1	18 dBm		49 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	13.8 dB	-40 Cel	Tin (Sn)		e3	0 MHz	6000 MHz
MAX2644EXT-T	Maxim Integrated	WIDE BAND MEDIUM POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1	5 dBm		11 mA	COMPONENT	3	TSSOP6,.08	50 ohm		85 Cel	15 dB	-40 Cel	TIN LEAD		e0	2400 MHz	2500 MHz
MAX2632EUS-T	Maxim Integrated	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR			5 dBm	1.25	11 mA	COMPONENT	3	TO-253	50 ohm	RF/Microwave Amplifiers	85 Cel	11 dB	-40 Cel	Tin/Lead (Sn/Pb)	LOW NOISE	e0	800 MHz	1000 MHz
MAX2641EUT	Maxim Integrated	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1	5 dBm		6.4 mA	COMPONENT	3/5	TSOP6,.11,37	50 ohm	RF/Microwave Amplifiers	85 Cel	12.4 dB	-40 Cel	TIN LEAD		e0	1400 MHz	2500 MHz
AVT-51663-BLKG	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1	15 dBm		40 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	18 dB	-40 Cel	Tin (Sn)		e3	0 MHz	6000 MHz
SKY65116-21	Skyworks Solutions	WIDE BAND HIGH POWER	SURFACE MOUNT	12	PLASTIC/EPOXY	BIPOLAR		1			1300 mA	COMPONENT	3.6	LCC12,.32SQ,75/64	50 ohm		85 Cel	35 dB	-40 Cel	Gold (Au)	HIGH RELIABILITY	e4	390 MHz	500 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.