GAN RF & Microwave Amplifiers 16

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
HMC1114PM5ETR	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAN	1	18 dBm	6	150 mA	COMPONENT	28	LCC32,.2SQ,20	50 ohm	85 Cel	31 dB	-40 Cel	NICKEL PALLADIUM GOLD	e4	2700 MHz	3800 MHz
ADPA1106ACGZN	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	32		GAN	1	30 dBm	2.1		COMPONENT	50	LCC32,.2SQ,20	50 ohm	85 Cel	33.5 dB	-40 Cel			2700 MHz	3500 MHz
ADPA1106ACGZN-R7	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	32		GAN	1	30 dBm	2.1		COMPONENT	50	LCC32,.2SQ,20	50 ohm	85 Cel	33.5 dB	-40 Cel			2700 MHz	3500 MHz
HMC1114LP5DE	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAN	1	30 dBm		150 mA	COMPONENT	28	LCC32,.2SQ,20	50 ohm	85 Cel	29 dB	-40 Cel			2700 MHz	3800 MHz
HMC1087F10	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	10	CERAMIC	GAN	1	34 dBm	6		COMPONENT	28		50 ohm	85 Cel	11 dB	-40 Cel			2000 MHz	20000 MHz
HMC1099LP5DETR	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAN	1	33 dBm	6	100 mA	COMPONENT	28	LCC32,.2SQ,20	50 ohm	85 Cel	16.5 dB	-40 Cel			10 MHz	1100 MHz
HMC1114LP5DETR	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAN	1	30 dBm		150 mA	COMPONENT	28	LCC32,.2SQ,20	50 ohm	85 Cel	29 dB	-40 Cel			2700 MHz	3800 MHz
HMC1099PM5ETR	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAN	1	33 dBm	6	100 mA	COMPONENT	28	LCC32,.2SQ,20	50 ohm	85 Cel	16.5 dB	-40 Cel			10 MHz	1100 MHz
HMC1099PM5E	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAN	1	33 dBm	6	100 mA	COMPONENT	28	LCC32,.2SQ,20	50 ohm	85 Cel	16.5 dB	-40 Cel			10 MHz	1100 MHz
HMC8500PM5ETR	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAN	1	33 dBm	6	100 mA	COMPONENT	28	LCC32,.2SQ,20	50 ohm	85 Cel	12 dB	-40 Cel	NICKEL PALLADIUM GOLD	e4	10 MHz	2800 MHz
HMC8500PM5E	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAN	1	33 dBm	6	100 mA	COMPONENT	28	LCC32,.2SQ,20	50 ohm	85 Cel	12 dB	-40 Cel	NICKEL PALLADIUM GOLD	e4	10 MHz	2800 MHz
HMC1114PM5E	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAN	1	18 dBm	6	150 mA	COMPONENT	28	LCC32,.2SQ,20	50 ohm	85 Cel	31 dB	-40 Cel	NICKEL PALLADIUM GOLD	e4	2700 MHz	3800 MHz
ADPA1105ACGZN	Analog Devices	NARROW BAND HIGH POWER	SURFACE MOUNT	32		GAN	1	30 dBm	1.5		COMPONENT	50	LCC32,.2SQ,20	50 ohm	85 Cel	30.5 dB	-40 Cel	NICKEL PALLADIUM GOLD	e4	900 MHz	1600 MHz
ADPA1105ACGZN-R7	Analog Devices	NARROW BAND HIGH POWER	SURFACE MOUNT	32		GAN	1	30 dBm	1.5		COMPONENT	50	LCC32,.2SQ,20	50 ohm	85 Cel	30.5 dB	-40 Cel	NICKEL PALLADIUM GOLD	e4	900 MHz	1600 MHz
ADPA1107ACPZN	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	40		GAN	1	31 dBm	1.54		COMPONENT		LCC40,.24SQ,20	50 ohm	85 Cel	27 dB	-40 Cel			4800 MHz	6000 MHz
ADPA1107ACPZN-R7	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	40		GAN	1	31 dBm	1.54		COMPONENT		LCC40,.24SQ,20	50 ohm	85 Cel	27 dB	-40 Cel			4800 MHz	6000 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.