HYBRID RF & Microwave Amplifiers 50

Reset All
Part RoHS Manufacturer RF or Microwave Device Type Mounting Feature No. of Terminals Package Body Material Technology Screening Level Total Dose (V) Maximum Supply Voltage No. of Functions Maximum Input Power (CW) Maximum Voltage Standing Wave Ratio Maximum Supply Current Construction Power Supplies (V) Package Equivalence Code Characteristic Impedance Sub-Category Maximum Operating Temperature Gain Minimum Operating Temperature Terminal Finish Additional Features JESD-609 Code Minimum Operating Frequency Maximum Operating Frequency

CGD1040HI,112

NXP Semiconductors

PLASTIC/EPOXY

HYBRID

1

460 mA

24

SOT-115J

RF/Microwave Amplifiers

100 Cel

-20 Cel

CGD1042HI,112

NXP Semiconductors

PLASTIC/EPOXY

HYBRID

1

460 mA

24

SOT-115J

RF/Microwave Amplifiers

CGY888C,112

NXP Semiconductors

PLASTIC/EPOXY

HYBRID

1

300 mA

24

SOT-115J

RF/Microwave Amplifiers

CGD1046HI,112

NXP Semiconductors

PLASTIC/EPOXY

HYBRID

1

465 mA

24

SOT-115J

RF/Microwave Amplifiers

100 Cel

-20 Cel

CGY1043,112

NXP Semiconductors

PLASTIC/EPOXY

HYBRID

1

280 mA

24

SOT-115J

RF/Microwave Amplifiers

CGY1041,112

NXP Semiconductors

PLASTIC/EPOXY

HYBRID

1

280 mA

24

SOT-115J

RF/Microwave Amplifiers

CGY1032,112

NXP Semiconductors

PLASTIC/EPOXY

HYBRID

1

280 mA

24

SOT-115J

RF/Microwave Amplifiers

BGY588C,112

NXP Semiconductors

PLASTIC/EPOXY

HYBRID

1

345 mA

24

SOT-115J

RF/Microwave Amplifiers

100 Cel

-20 Cel

BGE788C,112

NXP Semiconductors

PLASTIC/EPOXY

HYBRID

1

325 mA

24

SOT-115J

RF/Microwave Amplifiers

100 Cel

-20 Cel

BGX885N,112

NXP Semiconductors

PLASTIC/EPOXY

HYBRID

240 mA

24

SOT-115J

RF/Microwave Amplifiers

100 Cel

-20 Cel

CGD942C,112

NXP Semiconductors

PLASTIC/EPOXY

HYBRID

1

24

SOT-115J

RF/Microwave Amplifiers

CGD944C,112

NXP Semiconductors

PLASTIC/EPOXY

HYBRID

1

24

SOT-115J

RF/Microwave Amplifiers

BGD502,112

NXP Semiconductors

WIDE BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

16.25 dBm

435 mA

MODULE

24

SOT-115J

75 ohm

RF/Microwave Amplifiers

100 Cel

18.8 dB

-20 Cel

Gold (Au)

LOW NOISE

e4

40 MHz

550 MHz

BGD702N,112

NXP Semiconductors

WIDE BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

435 mA

MODULE

24

SOT-115J

75 ohm

RF/Microwave Amplifiers

100 Cel

18.5 dB

-20 Cel

LOW NOISE, HIGH RELIABILITY

40 MHz

750 MHz

BGD704,112

NXP Semiconductors

WIDE BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

435 mA

MODULE

24

SOT-115J

75 ohm

RF/Microwave Amplifiers

100 Cel

20 dB

-20 Cel

LOW NOISE, HIGH RELIABILITY

40 MHz

750 MHz

BGD714,112

NXP Semiconductors

WIDE BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

410 mA

MODULE

24

SOT-115J

75 ohm

RF/Microwave Amplifiers

100 Cel

20.8 dB

-20 Cel

Gold (Au)

LOW NOISE, HIGH RELIABILITY

e4

40 MHz

750 MHz

BGD802,112

NXP Semiconductors

WIDE BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

410 mA

MODULE

24

SOT-115J

75 ohm

RF/Microwave Amplifiers

100 Cel

18.5 dB

-20 Cel

LOW NOISE, HIGH RELIABILITY

40 MHz

860 MHz

BGD804,112

NXP Semiconductors

WIDE BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

410 mA

MODULE

24

SOT-115J

75 ohm

RF/Microwave Amplifiers

100 Cel

20 dB

-20 Cel

Gold (Au)

LOW NOISE, HIGH RELIABILITY

e4

40 MHz

860 MHz

BGD812,112

NXP Semiconductors

WIDE BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

410 mA

MODULE

24

SOT-115J

75 ohm

RF/Microwave Amplifiers

100 Cel

19 dB

-20 Cel

LOW NOISE, HIGH RELIABILITY

40 MHz

870 MHz

BGD814,112

NXP Semiconductors

WIDE BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

21.25 dBm

410 mA

MODULE

24

SOT-115J

75 ohm

RF/Microwave Amplifiers

100 Cel

20.5 dB

-20 Cel

LOW NOISE, HIGH RELIABILITY

40 MHz

870 MHz

BGD816L,112

NXP Semiconductors

WIDE BAND HIGH POWER

HYBRID

1

375 mA

MODULE

24

SOT-115J

75 ohm

RF/Microwave Amplifiers

100 Cel

22 dB

-20 Cel

LOW NOISE, HIGH RELIABILITY

40 MHz

870 MHz

BGD885,112

NXP Semiconductors

WIDE BAND MEDIUM POWER

PLASTIC/EPOXY

HYBRID

450 mA

MODULE

24

SOT-115D

75 ohm

RF/Microwave Amplifiers

100 Cel

16.5 dB

-20 Cel

LOW NOISE, HIGH RELIABILITY

40 MHz

860 MHz

BGD902,112

NXP Semiconductors

WIDE BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

16.25 dBm

435 mA

COMPONENT

24

SOT-115J

75 ohm

RF/Microwave Amplifiers

100 Cel

18.2 dB

-20 Cel

LOW NOISE

40 MHz

900 MHz

BGD904,112

NXP Semiconductors

WIDE BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

21.25 dBm

435 mA

MODULE

24

SOT-115J

75 ohm

RF/Microwave Amplifiers

100 Cel

20.5 dB

-20 Cel

Gold (Au)

LOW NOISE, HIGH RELIABILITY

e4

40 MHz

900 MHz

BGD906,112

NXP Semiconductors

WIDE BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

435 mA

MODULE

24

SOT-115J

75 ohm

RF/Microwave Amplifiers

100 Cel

22 dB

-20 Cel

Gold (Au)

LOW NOISE, HIGH RELIABILITY

e4

40 MHz

900 MHz

BGE788,112

NXP Semiconductors

WIDE BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

320 mA

MODULE

24

SOT-115J

75 ohm

RF/Microwave Amplifiers

100 Cel

34 dB

-20 Cel

LOW NOISE

40 MHz

750 MHz

BGE885,112

NXP Semiconductors

WIDE BAND MEDIUM POWER

PLASTIC/EPOXY

HYBRID

240 mA

MODULE

24

SOT-115D

75 ohm

RF/Microwave Amplifiers

100 Cel

16.5 dB

-20 Cel

LOW NOISE

40 MHz

860 MHz

BGF802-20,127

NXP Semiconductors

NARROW BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

1

20 dBm

2

320 mA

COMPONENT

26

FLNG,1.6"H.SPACE

50 ohm

RF/Microwave Amplifiers

90 Cel

28 dB

-20 Cel

869 MHz

894 MHz

BGR269,112

NXP Semiconductors

WIDE BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

1

175 mA

MODULE

24

SOT-115J

75 ohm

RF/Microwave Amplifiers

100 Cel

35 dB

-20 Cel

LOW NOISE, HIGH RELIABILITY

5 MHz

200 MHz

BGY1085A,112

NXP Semiconductors

WIDE BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

240 mA

MODULE

24

SOT-115J

75 ohm

RF/Microwave Amplifiers

100 Cel

18.5 dB

-20 Cel

LOW NOISE, HIGH RELIABILITY

40 MHz

1000 MHz

BGY585A,112

NXP Semiconductors

WIDE BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

240 mA

MODULE

24

SOT-115J

75 ohm

RF/Microwave Amplifiers

100 Cel

18.8 dB

-20 Cel

LOW NOISE

40 MHz

550 MHz

BGY588N,112

NXP Semiconductors

WIDE BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

340 mA

MODULE

24

SOT-115J

75 ohm

RF/Microwave Amplifiers

100 Cel

35 dB

-20 Cel

LOW NOISE

40 MHz

550 MHz

BGY66B,112

NXP Semiconductors

WIDE BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

16.25 dBm

135 mA

MODULE

24

SOT-115J

75 ohm

RF/Microwave Amplifiers

100 Cel

24.5 dB

-20 Cel

LOW NOISE, HIGH RELIABILITY

5 MHz

120 MHz

BGY67A,112

NXP Semiconductors

WIDE BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

16.25 dBm

230 mA

MODULE

24

SOT-115J

75 ohm

RF/Microwave Amplifiers

90 Cel

23.5 dB

-20 Cel

LOW NOISE

5 MHz

200 MHz

BGY68,112

NXP Semiconductors

NARROW BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

6.25 dBm

135 mA

MODULE

24

SOT-115J

75 ohm

RF/Microwave Amplifiers

100 Cel

29.2 dB

-20 Cel

LOW NOISE, HIGH RELIABILITY

5 MHz

75 MHz

BGY785A,112

NXP Semiconductors

WIDE BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

240 mA

MODULE

24

SOT-115J

75 ohm

RF/Microwave Amplifiers

100 Cel

18.5 dB

-20 Cel

LOW NOISE, HIGH RELIABILITY

40 MHz

750 MHz

BGY787,112

NXP Semiconductors

WIDE BAND MEDIUM POWER

PLASTIC/EPOXY

HYBRID

240 mA

MODULE

24

SOT-115J

75 ohm

RF/Microwave Amplifiers

100 Cel

21.5 dB

-20 Cel

LOW NOISE, HIGH RELIABILITY

40 MHz

750 MHz

BGY883,112

NXP Semiconductors

WIDE BAND MEDIUM POWER

PLASTIC/EPOXY

HYBRID

235 mA

MODULE

24

SOT-115J

75 ohm

RF/Microwave Amplifiers

100 Cel

15 dB

-20 Cel

LOW NOISE, HIGH RELIABILITY

40 MHz

860 MHz

BGY885A,112

NXP Semiconductors

WIDE BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

240 mA

MODULE

24

SOT-115J

75 ohm

RF/Microwave Amplifiers

100 Cel

18.5 dB

-20 Cel

LOW NOISE, HIGH RELIABILITY

40 MHz

860 MHz

BGY885B,112

NXP Semiconductors

WIDE BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

1

235 mA

MODULE

24

SOT-115J

75 ohm

RF/Microwave Amplifiers

100 Cel

20 dB

-20 Cel

Gold (Au)

LOW NOISE, HIGH RELIABILITY

e4

40 MHz

860 MHz

BGY887,112

NXP Semiconductors

WIDE BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

235 mA

MODULE

24

SOT-115J

75 ohm

RF/Microwave Amplifiers

100 Cel

21.5 dB

-20 Cel

LOW NOISE, HIGH RELIABILITY

40 MHz

860 MHz

BGY887B,112

NXP Semiconductors

WIDE BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

340 mA

MODULE

24

SOT-115J

75 ohm

RF/Microwave Amplifiers

100 Cel

29 dB

-20 Cel

LOW NOISE

40 MHz

860 MHz

BGY888,112

NXP Semiconductors

WIDE BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

340 mA

MODULE

24

SOT-115J

75 ohm

RF/Microwave Amplifiers

100 Cel

34 dB

-20 Cel

LOW NOISE

40 MHz

860 MHz

CGD914,112

NXP Semiconductors

WIDE BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

1

19.75 dBm

375 mA

MODULE

24

SOT-115J

75 ohm

RF/Microwave Amplifiers

100 Cel

20.2 dB

-20 Cel

Gold (Au)

LOW NOISE, HIGH RELIABILITY

e4

40 MHz

870 MHz

CGD923,112

NXP Semiconductors

WIDE BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

1

490 mA

MODULE

24

SOT-115J

75 ohm

RF/Microwave Amplifiers

100 Cel

19.5 dB

-20 Cel

GOLD

LOW NOISE, HIGH RELIABILITY

e4

40 MHz

870 MHz

CGY887A,112

NXP Semiconductors

WIDE BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

240 mA

MODULE

24

SOT-115J

75 ohm

RF/Microwave Amplifiers

100 Cel

25.7 dB

-20 Cel

GOLD

LOW NOISE, HIGH RELIABILITY

e4

40 MHz

870 MHz

CGY887B,112

NXP Semiconductors

WIDE BAND HIGH POWER

HYBRID

1

325 mA

MODULE

24

SOT-115J

75 ohm

RF/Microwave Amplifiers

100 Cel

28 dB

-20 Cel

GOLD

LOW NOISE, HIGH RELIABILITY

e4

40 MHz

870 MHz

MMZ25332B4T1

NXP Semiconductors

WIDE BAND MEDIUM POWER

SURFACE MOUNT

24

PLASTIC/EPOXY

HYBRID

1

30 dBm

415 mA

COMPONENT

5

LCC24,.16SQ,20

50 ohm

23.5 dB

TIN

e3

1500 MHz

2700 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.