Infineon Technologies RF & Microwave Amplifiers 21

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
BGA622-E6327	Infineon Technologies				PLASTIC/EPOXY		1					2.75	SOT-343R		RF/Microwave Amplifiers	85 Cel		-30 Cel
BGA420H6327	Infineon Technologies				PLASTIC/EPOXY	BIPOLAR	1			8 mA		3	SOT-343R		RF/Microwave Amplifiers	150 Cel		-65 Cel
PTMA210152MV1AUMA1	Infineon Technologies	NARROW BAND HIGH POWER	SURFACE MOUNT	20	PLASTIC/EPOXY		1	15 dBm	10		COMPONENT	28	SOP20,.56	50 ohm			27.5 dB					1800 MHz	2200 MHz
BGA612E6327HTSA1	Infineon Technologies	WIDE BAND LOW POWER						10 dBm			COMPONENT			50 ohm		150 Cel	16.3 dB	-65 Cel	Matte Tin (Sn)		e3	0 MHz	2800 MHz
BGA612H6327XTSA1	Infineon Technologies	WIDE BAND LOW POWER						10 dBm			COMPONENT			50 ohm		150 Cel	16.3 dB	-65 Cel	Tin (Sn)		e3	0 MHz	2800 MHz
BGA231L7E6327XTSA1	Infineon Technologies	NARROW BAND LOW POWER						0 dBm			COMPONENT			50 ohm		85 Cel	16 dB	-40 Cel				1550 MHz	1615 MHz
BGA231N7E6327XTSA2	Infineon Technologies	NARROW BAND LOW POWER						0 dBm			COMPONENT			50 ohm		85 Cel	16 dB	-40 Cel	Tin (Sn)		e3	1550 MHz	1615 MHz
BGA416E6327HTSA1	Infineon Technologies	WIDE BAND LOW POWER						8 dBm			COMPONENT			50 ohm		150 Cel	14 dB	-65 Cel	Tin (Sn)		e3	900 MHz	1800 MHz
BGA622L7E6327XTSA1	Infineon Technologies	WIDE BAND LOW POWER						6 dBm			COMPONENT			50 ohm		150 Cel	16.2 dB	-65 Cel	Gold (Au)		e4	500 MHz	6000 MHz
BGA428H6327XTSA1	Infineon Technologies	NARROW BAND LOW POWER						8 dBm			COMPONENT			50 ohm		85 Cel	20 dB	-40 Cel
BGA461E6327XTSA1	Infineon Technologies	WIDE BAND LOW POWER						10 dBm			COMPONENT			50 ohm		85 Cel	19.5 dB	-30 Cel
BGA615L7E6327XTSA1	Infineon Technologies	NARROW BAND MEDIUM POWER						10 dBm			COMPONENT			50 ohm		85 Cel	18 dB	-30 Cel		LOW NOISE
BGA616E6327HTSA1	Infineon Technologies	WIDE BAND LOW POWER						10 dBm			COMPONENT			50 ohm		150 Cel	18 dB	-65 Cel				0 MHz	2700 MHz
BGA628L7E6327XTMA1	Infineon Technologies	WIDE BAND LOW POWER						6 dBm			COMPONENT			50 ohm		150 Cel	10 dB	-65 Cel				400 MHz	6000 MHz
BGA711L7E6327XTSA1	Infineon Technologies	NARROW BAND MEDIUM POWER						4 dBm			COMPONENT			50 ohm		85 Cel	16.7 dB	-30 Cel		LOW NOISE		2110 MHz	2155 MHz
BGA715L7E6327XTSA1	Infineon Technologies	NARROW BAND LOW POWER						10 dBm			COMPONENT			50 ohm		85 Cel	20 dB	-40 Cel		LOW NOISE
BGA751L7E6327XTSA1	Infineon Technologies	NARROW BAND LOW POWER						4 dBm			COMPONENT			50 ohm		85 Cel	15.8 dB	-30 Cel		LOW NOISE		875 MHz	885 MHz
BGA614E6327HTSA1	Infineon Technologies	WIDE BAND LOW POWER						10 dBm			COMPONENT			50 ohm		150 Cel	17.5 dB	-65 Cel				0 MHz	2400 MHz
PTMA080152MV1AUMA1	Infineon Technologies	WIDE BAND HIGH POWER						42 dBm	10		COMPONENT			50 ohm			29 dB		Tin (Sn)		e3	700 MHz	1000 MHz
PTMA210452ELV1XWSA1	Infineon Technologies	NARROW BAND HIGH POWER						25 dBm	10		MODULE			50 ohm			26.5 dB					1900 MHz	2200 MHz
BGA748N16E6327	Infineon Technologies	NARROW BAND LOW POWER						4 dBm			COMPONENT			50 ohm		85 Cel	18 dB	-30 Cel		LOW NOISE, IT CAN ALSO OPERATE AT 925-960 MHZ,1930-1990 MHZ AND 2110-2170 MHZ		2110 MHz	2170 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.