NXP Semiconductors RF & Microwave Amplifiers 125

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Part RoHS Manufacturer RF or Microwave Device Type Mounting Feature No. of Terminals Package Body Material Technology Screening Level Total Dose (V) Maximum Supply Voltage No. of Functions Maximum Input Power (CW) Maximum Voltage Standing Wave Ratio Maximum Supply Current Construction Power Supplies (V) Package Equivalence Code Characteristic Impedance Sub-Category Maximum Operating Temperature Gain Minimum Operating Temperature Terminal Finish Additional Features JESD-609 Code Minimum Operating Frequency Maximum Operating Frequency

CGD1040HI,112

NXP Semiconductors

PLASTIC/EPOXY

HYBRID

1

460 mA

24

SOT-115J

RF/Microwave Amplifiers

100 Cel

-20 Cel

CGD1042HI,112

NXP Semiconductors

PLASTIC/EPOXY

HYBRID

1

460 mA

24

SOT-115J

RF/Microwave Amplifiers

CGY888C,112

NXP Semiconductors

PLASTIC/EPOXY

HYBRID

1

300 mA

24

SOT-115J

RF/Microwave Amplifiers

BGU7003,132

NXP Semiconductors

SURFACE MOUNT

6

PLASTIC/EPOXY

1

15 mA

2.5

SOLCC6,.04,14

RF/Microwave Amplifiers

85 Cel

-40 Cel

Tin (Sn)

e3

CGD1044HI,112

NXP Semiconductors

PLASTIC/EPOXY

1

460 mA

24

SOT-115J

RF/Microwave Amplifiers

BGA7124,118

NXP Semiconductors

SURFACE MOUNT

8

PLASTIC/EPOXY

1

200 mA

3.3/5

SOLCC8,.12,20

RF/Microwave Amplifiers

BGA7024,135

NXP Semiconductors

SURFACE MOUNT

3

PLASTIC/EPOXY

1

125 mA

5

TO-243

RF/Microwave Amplifiers

TIN

e3

BGA7024,115

NXP Semiconductors

SURFACE MOUNT

3

PLASTIC/EPOXY

1

125 mA

5

TO-243

RF/Microwave Amplifiers

TIN

e3

BGA2865,115

NXP Semiconductors

SURFACE MOUNT

6

PLASTIC/EPOXY

1

29.7 mA

5

TSSOP6,.08

RF/Microwave Amplifiers

BGU7032,115

NXP Semiconductors

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

1

COMPONENT

5

TSSOP6,.08

RF/Microwave Amplifiers

70 Cel

-10 Cel

TIN

e3

1000 MHz

BGA2850,115

NXP Semiconductors

SURFACE MOUNT

6

PLASTIC/EPOXY

1

10.8 mA

5

TSSOP6,.08

RF/Microwave Amplifiers

CGD1046HI,112

NXP Semiconductors

PLASTIC/EPOXY

HYBRID

1

465 mA

24

SOT-115J

RF/Microwave Amplifiers

100 Cel

-20 Cel

BGA7027,115

NXP Semiconductors

SURFACE MOUNT

3

PLASTIC/EPOXY

1

195 mA

5

TO-243

RF/Microwave Amplifiers

TIN

e3

BGA2816,115

NXP Semiconductors

SURFACE MOUNT

6

PLASTIC/EPOXY

1

25.5 mA

3.3

TSSOP6,.08

RF/Microwave Amplifiers

BGA2002,115

NXP Semiconductors

PLASTIC/EPOXY

BIPOLAR

AEC-Q100

1

2.5

SOT-343R

RF/Microwave Amplifiers

Tin (Sn)

e3

CGY1043,112

NXP Semiconductors

PLASTIC/EPOXY

HYBRID

1

280 mA

24

SOT-115J

RF/Microwave Amplifiers

CGY1041,112

NXP Semiconductors

PLASTIC/EPOXY

HYBRID

1

280 mA

24

SOT-115J

RF/Microwave Amplifiers

CGY1032,112

NXP Semiconductors

PLASTIC/EPOXY

HYBRID

1

280 mA

24

SOT-115J

RF/Microwave Amplifiers

BGU7041,115

NXP Semiconductors

SURFACE MOUNT

6

PLASTIC/EPOXY

1

3.3

TSSOP6,.08

RF/Microwave Amplifiers

70 Cel

-10 Cel

Tin (Sn)

e3

CGD987HCI,112

NXP Semiconductors

PLASTIC/EPOXY

GAAS

1

460 mA

24

SOT-115J

RF/Microwave Amplifiers

BGU7042,115

NXP Semiconductors

SURFACE MOUNT

6

PLASTIC/EPOXY

1

60 mA

3.3

TSSOP6,.08

RF/Microwave Amplifiers

70 Cel

-10 Cel

Tin (Sn)

e3

BGU6104,147

NXP Semiconductors

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

1

40 mA

COMPONENT

3

SOLCC6,.08,20

RF/Microwave Amplifiers

85 Cel

5 dB

-40 Cel

TIN

e3

40 MHz

4000 MHz

BGU7003W,115

NXP Semiconductors

SURFACE MOUNT

6

PLASTIC/EPOXY

1

15 mA

2.5

SOLCC6,.04,20

RF/Microwave Amplifiers

85 Cel

-40 Cel

TIN

e3

BGY588C,112

NXP Semiconductors

PLASTIC/EPOXY

HYBRID

1

345 mA

24

SOT-115J

RF/Microwave Amplifiers

100 Cel

-20 Cel

BGE788C,112

NXP Semiconductors

PLASTIC/EPOXY

HYBRID

1

325 mA

24

SOT-115J

RF/Microwave Amplifiers

100 Cel

-20 Cel

BGU7052,118

NXP Semiconductors

SURFACE MOUNT

10

PLASTIC/EPOXY

1

95 mA

3.3

SOLCC10,.12,20

RF/Microwave Amplifiers

85 Cel

-40 Cel

BGA2874,115

NXP Semiconductors

SURFACE MOUNT

6

PLASTIC/EPOXY

1

19 mA

2.5

TSSOP6,.08

RF/Microwave Amplifiers

TIN

e3

BGU7053,118

NXP Semiconductors

SURFACE MOUNT

10

PLASTIC/EPOXY

1

110 mA

3.3

SOLCC10,.12,20

RF/Microwave Amplifiers

85 Cel

-40 Cel

BGU8007,115

NXP Semiconductors

SURFACE MOUNT

6

PLASTIC/EPOXY

1

14.7 mA

1.8

SOLCC6,.04,20

RF/Microwave Amplifiers

85 Cel

-40 Cel

Tin (Sn)

e3

BGA7130,118

NXP Semiconductors

SURFACE MOUNT

8

PLASTIC/EPOXY

1

550 mA

5

SOLCC8,.12,20

RF/Microwave Amplifiers

BLM7G22S-60PB,118

NXP Semiconductors

SURFACE MOUNT

16

PLASTIC/EPOXY

2

28

FL16(UNSPEC)

RF/Microwave Amplifiers

BLM7G22S-60PBG,118

NXP Semiconductors

SURFACE MOUNT

16

PLASTIC/EPOXY

2

28

SOP16(UNSPEC)

RF/Microwave Amplifiers

BGA3012,115

NXP Semiconductors

SURFACE MOUNT

3

PLASTIC/EPOXY

1

125 mA

8

TO-243

RF/Microwave Amplifiers

85 Cel

-40 Cel

TIN

e3

BGA3018,115

NXP Semiconductors

SURFACE MOUNT

3

PLASTIC/EPOXY

1

135 mA

8

TO-243

RF/Microwave Amplifiers

85 Cel

-40 Cel

TIN

e3

BGU8011X,115

NXP Semiconductors

SURFACE MOUNT

6

PLASTIC/EPOXY

BICMOS

1

1.8/2.85

SOLCC6,.04,16

RF/Microwave Amplifiers

85 Cel

-40 Cel

BGX885N,112

NXP Semiconductors

PLASTIC/EPOXY

HYBRID

240 mA

24

SOT-115J

RF/Microwave Amplifiers

100 Cel

-20 Cel

CGD942C,112

NXP Semiconductors

PLASTIC/EPOXY

HYBRID

1

24

SOT-115J

RF/Microwave Amplifiers

CGD944C,112

NXP Semiconductors

PLASTIC/EPOXY

HYBRID

1

24

SOT-115J

RF/Microwave Amplifiers

BGA2001,115

NXP Semiconductors

NARROW BAND LOW POWER

COMPONENT

50 ohm

19.5 dB

Tin (Sn)

LOW NOISE

e3

900 MHz

1800 MHz

BGA2003,115

NXP Semiconductors

WIDE BAND LOW POWER

PLASTIC/EPOXY

BIPOLAR

1

15 mA

COMPONENT

2.5

SOT-343R

50 ohm

RF/Microwave Amplifiers

16 dB

Tin (Sn)

LOW NOISE

e3

900 MHz

1800 MHz

BGA2011,115

NXP Semiconductors

NARROW BAND LOW POWER

COMPONENT

50 ohm

15 dB

Tin (Sn)

e3

BGA2012,115

NXP Semiconductors

NARROW BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

1

10 mA

COMPONENT

3

TSSOP6,.08

50 ohm

RF/Microwave Amplifiers

150 Cel

14 dB

Tin (Sn)

e3

BGA2031/1,115

NXP Semiconductors

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

10 dBm

1.4

COMPONENT

3

TSSOP6,.08

50 ohm

RF/Microwave Amplifiers

23 dB

Tin (Sn)

e3

800 MHz

2500 MHz

BGA2748,115

NXP Semiconductors

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

1

10 dBm

8 mA

COMPONENT

3

TSOP6,.08

50 ohm

RF/Microwave Amplifiers

18.5 dB

Tin (Sn)

LOW NOISE

e3

1000 MHz

2000 MHz

BGA2771,115

NXP Semiconductors

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

1

10 dBm

45 mA

COMPONENT

3

TSSOP6,.08

50 ohm

RF/Microwave Amplifiers

20.8 dB

Tin (Sn)

e3

1000 MHz

2000 MHz

BGA2776,115

NXP Semiconductors

WIDE BAND LOW POWER

10 dBm

COMPONENT

50 ohm

23.2 dB

Tin (Sn)

e3

1000 MHz

2000 MHz

BGA6289,135

NXP Semiconductors

WIDE BAND LOW POWER

SURFACE MOUNT

3

PLASTIC/EPOXY

1

15 dBm

96 mA

COMPONENT

8

TO-243

50 ohm

RF/Microwave Amplifiers

12 dB

Tin (Sn)

e3

850 MHz

2500 MHz

BGA6489,135

NXP Semiconductors

WIDE BAND LOW POWER

SURFACE MOUNT

3

PLASTIC/EPOXY

1

15 dBm

86 mA

COMPONENT

8

TO-243

50 ohm

RF/Microwave Amplifiers

15 dB

Tin (Sn)

e3

850 MHz

2500 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.