Texas Instruments RF & Microwave Amplifiers 10

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
TRF7610PWP	Texas Instruments	WIDE BAND HIGH POWER						13 dBm	6		COMPONENT					85 Cel	30 dB	-40 Cel				800 MHz	1000 MHz
TRF37B75IDSGR	Texas Instruments	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY		1	10 dBm		85 mA	COMPONENT	5		50 ohm		85 Cel	15 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	40 MHz	4000 MHz
THS9000DRDR	Texas Instruments	WIDE BAND MEDIUM POWER									COMPONENT			50 ohm		85 Cel	15.6 dB	-40 Cel				50 MHz	400 MHz
CC2590RGVT	Texas Instruments	NARROW BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY		1	10 dBm			COMPONENT	3				85 Cel	14.1 dB	-40 Cel	NICKEL PALLADIUM GOLD	LOW NOISE	e4	2400 MHz	2483.5 MHz
CC2590RGVRG4	Texas Instruments	NARROW BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY		1	10 dBm			COMPONENT	3				85 Cel	14.1 dB	-40 Cel	NICKEL PALLADIUM GOLD	LOW NOISE	e4	2400 MHz	2483.5 MHz
THS9000DRWR	Texas Instruments	WIDE BAND MEDIUM POWER	SURFACE MOUNT	6	PLASTIC/EPOXY		1			100 mA	COMPONENT	5		50 ohm		85 Cel	15.7 dB	-40 Cel	NICKEL PALLADIUM GOLD SILVER		e4	50 MHz	400 MHz
THS9001DBVRG4	Texas Instruments	WIDE BAND MEDIUM POWER									COMPONENT			50 ohm		85 Cel	15 dB	-40 Cel				50 MHz	350 MHz
TRF1123IRTMTG3	Texas Instruments	NARROW BAND MEDIUM POWER	SURFACE MOUNT	32	PLASTIC/EPOXY		1	20 dBm		700 mA	COMPONENT	7	LCC32,.2SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	26 dB	-40 Cel	Matte Tin (Sn)		e3	2100 MHz	2700 MHz
TRF1208RPVR	Texas Instruments	WIDE BAND LOW POWER	SURFACE MOUNT	12	PLASTIC/EPOXY	BICMOS	1	20 dBm			COMPONENT	3.3	LCC12,.08SQ,20	100 ohm		105 Cel	16 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	10 MHz	11000 MHz
TRF1208RPVT	Texas Instruments	WIDE BAND LOW POWER	SURFACE MOUNT	12	PLASTIC/EPOXY	BICMOS	1	20 dBm			COMPONENT	3.3	LCC12,.08SQ,20	100 ohm		105 Cel	16 dB	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)		e4	10 MHz	11000 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.