VARIABLE ATTENUATOR RF/Microwave Attenuators 71

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  2. RF/Microwave Attenuators
Manufacturers
    • Aeroflex/weinschel
    • Amphenol
    • Analog Devices
    • Api Technologies
    • Broadcom
    • Cobham Plc
    • Defense Logistics Agency
    • Herley Industries
    • Hirose Electric
    • Hittite Microwave
    • Honeywell
    • Huber+suhner Ag
    • IXYS Corporation
    • Infinite Electronics International
    • Integrated Device Technology
    • International Manufacturing Services
    • KYOCERA AVX
    • Keysight Technologies
    • Lockheed Martin Microwave
    • M/a-com Technology Solutions
    • Maxim Integrated
    • Meca Electronics
    • Mini-circuits
    • NXP Semiconductors
    • Panasonic
    • Pasternack Enterprises
    • Pomona Electronics
    • Psemi
    • Qorvo
    • Radiall S A
    • Renesas Electronics
    • Samsung
    • Skyworks Solutions
    • Smiths Group Plc
    • Susumu
    • Sv Microwave
    • TE Connectivity
    • Texas Instruments
    • Toshiba
    • Tt Electronics Plc
    • Ttm Technologies
    • Yokohama Denshi Seiko
RF or Microwave Device Type (1)
    • VARIABLE ATTENUATOR
    • FIXED ATTENUATOR
    • PROGRAMMABLE ATTENUATOR
Mounting Feature
    • PANEL MOUNT
    • SURFACE MOUNT
    • THROUGH HOLE MOUNT
No. of Terminals
    • 10
    • 12
    • 14
    • 16
    • 20
    • 24
    • 3
    • 32
    • 36
    • 4
    • 5
    • 6
    • 8
    • 9
Package Body Material
    • CERAMIC
    • METAL
    • PLASTIC/EPOXY
Technology
    • AIN
    • BICMOS
    • CMOS
    • GAAS
Screening Level
    • 38535V;38534K;883S
    • MIL-A-3933
    • MIL-C-39012; MIL-DTL-3933
    • MIL-DTL-3933
    • MIL-PRF-38534 Class K
    • MIL-PRF-55342
    • MIL-STD-202, MIL-STD-348A
    • MIL-STD-883
Maximum Input Power (CW)
    • 15.05 dBm
    • 16.02 dBm
    • 16.99 dBm
    • 17.78 dBm
    • 17.99 dBm
    • 18 dBm
    • 18.06 dBm
    • 20 dBm
    • 23 dBm
    • 23.01 dBm
    • 23.98 dBm
    • 24 dBm
    • 24.5 dBm
    • 24.91 dBm
    • 25 dBm
    • 25.05 dBm
    • 26 dBm
    • 26.02 dBm
    • 26.99 dBm
    • 27 dBm
    • 27.99 dBm
    • 28 dBm
    • 28.06 dBm
    • 28.98 dBm
    • 29 dBm
    • 29.03 dBm
    • 29.3 dBm
    • 30 dBm
    • 31 dBm
    • 31.76 dBm
    • 32.3 dBm
    • 32.304 dBm
    • 33.01 dBm
    • 33.98 dBm
    • 34 dBm
    • 35 dBm
    • 35.05 dBm
    • 36 dBm
    • 36.99 dBm
    • 40 dBm
    • 42.3 dBm
    • 43.01 dBm
    • 43.98 dBm
    • 44.31 dBm
    • 44.77 dBm
    • 46.99 dBm
    • 50 dBm
    • 51.76 dBm
    • 53.98 dBm
    • 56.99 dBm
    • 60 dBm
Maximum Voltage Standing Wave Ratio
    • 1.1
    • 1.15
    • 1.2
    • 1.22
    • 1.25
    • 1.29
    • 1.3
    • 1.33
    • 1.35
    • 1.38
    • 1.4
    • 1.43
    • 1.45
    • 1.49
    • 1.5
    • 1.55
    • 1.58
    • 1.6
    • 1.65
    • 1.67
    • 1.7
    • 1.8
    • 1.9
    • 1.92
    • 1.95
    • 2
    • 2.1
    • 2.25
Nominal Attenuation
    • .05 dB
    • .5 dB
    • 0 dB
    • 1 dB
    • 10 dB
    • 10.87 dB
    • 11 dB
    • 110 dB
    • 12 dB
    • 120 dB
    • 13 dB
    • 14 dB
    • 15 dB
    • 15.5 dB
    • 15.75 dB
    • 16 dB
    • 17 dB
    • 18 dB
    • 19 dB
    • 19.7 dB
    • 2 dB
    • 2.9 dB
    • 20 dB
    • 20.05 dB
    • 21 dB
    • 22 dB
    • 23 dB
    • 23.5 dB
    • 24 dB
    • 25 dB
    • 27 dB
    • 28 dB
    • 29 dB
    • 29.97 dB
    • 3 dB
    • 30 dB
    • 31 dB
    • 31.5 dB
    • 31.7 dB
    • 31.75 dB
    • 32 dB
    • 32.4 dB
    • 33 dB
    • 33.7 dB
    • 35 dB
    • 39 dB
    • 4 dB
    • 40 dB
    • 42 dB
    • 45 dB
    • 5 dB
    • 5.7 dB
    • 50 dB
    • 6 dB
    • 60 dB
    • 63 dB
    • 7 dB
    • 7.5 dB
    • 7.75 dB
    • 70 dB
    • 8 dB
    • 8.5 dB
    • 9 dB
    • 9.5 dB
    • 9.9 dB
    • 9.97 dB
Maximum Supply Current
    • .05 mA
    • .1 mA
    • .2 mA
    • .25 mA
    • .26 mA
    • .3 mA
    • .35 mA
    • .4 mA
    • .9 mA
    • 1 mA
    • 1.5 mA
    • 2 mA
    • 2.5 mA
    • 25 mA
    • 3 mA
    • 3.5 mA
    • 5 mA
    • 6 mA
    • 6.5 mA
    • 7 mA
    • 9.5 mA
Construction
    • COAXIAL
    • COMPONENT
    • MODULE
Power Supplies (V)
    • +-3
    • +-3.3
    • +-5
    • -3
    • -3.3, 3.3
    • -3/-5
    • -4
    • -5
    • -7
    • 1
    • 1.25,1.5
    • 2.5/5
    • 2.7
    • 3
    • 3.3
    • 3.3/5
    • 3.3/5,5
    • 3.7
    • 3/5
    • 5
    • 5,-5/-8
Package Equivalence Code
    • DIE OR CHIP
    • DIP8,.2,200
    • LCC12,.12SQ,20
    • LCC12,.2SQ
    • LCC16,.12SQ,20
    • LCC16,.16SQ,25
    • LCC16,.1SQ,16
    • LCC20,.16SQ,20
    • LCC24,.16SQ,20
    • LCC32,.2SQ,20
    • LCC36,.25SQ,20
    • LCC6/8,.15SQ,28
    • LCC8,.2SQ,28
    • MODULE(UNSPEC)
    • MODULE,4LEAD(UNSPEC)
    • QFP16,.45SQ,30
    • QFP16,.4SQ,30
    • SOLCC6,.08,25
    • SOP14,.25
    • SOP16,.25
    • SOP24,.4
    • SOP8,.25
    • SOP8,.3
    • SOP8,.4
    • SSOP16,.25
    • TO-253
    • TSOP5/6,.11,37
    • TSOP6,.11,37
    • TSSOP10,.19,20
    • TSSOP8,.19
Characteristic Impedance
    • 50 ohm
    • 75 ohm
Sub-Category
    • RF/Microwave Attenuators
Maximum Operating Temperature
    • 100 Cel
    • 102 Cel
    • 105 Cel
    • 125 Cel
    • 135 Cel
    • 140 Cel
    • 150 Cel
    • 200 Cel
    • 55 Cel
    • 65 Cel
    • 71 Cel
    • 75 Cel
    • 85 Cel
    • 90 Cel
Minimum Operating Temperature
    • -10 Cel
    • -20 Cel
    • -40 Cel
    • -45 Cel
    • -50 Cel
    • -54 Cel
    • -55 Cel
    • -65 Cel
    • 0 Cel
Terminal Finish
    • GOLD
    • GOLD OVER NICKEL
    • GOLD/SILVER
    • Gold (Au)
    • Gold (Au) - with Nickel (Ni) barrier
    • Gold Flash (Au) - with Nickel (Ni) barrier
    • MATTE TIN
    • MATTE TIN OVER NICKEL
    • Matte Tin (Sn)
    • Matte Tin (Sn) - annealed
    • Matte Tin (Sn) - with Nickel (Ni) barrier
    • NICKEL (10) PALLADIUM GOLD SILVER
    • NICKEL PALLADIUM GOLD
    • Nickel (Ni)
    • Nickel/Gold (Ni/Au)
    • Nickel/Palladium/Gold (Ni/Pd/Au)
    • SILVER
    • SILVER FLASH OVER NICKEL PALLADIUM GOLD
    • SILVER OVER NICKEL
    • Silver (Ag)
    • TIN
    • TIN LEAD
    • TIN SILVER
    • TIN SILVER NICKEL
    • TIN SILVER OVER NICKEL
    • Tin (Sn)
    • Tin/Lead (Sn/Pb)
    • Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier
    • Tin/Lead (Sn85Pb15)
    • Tin/Silver (Sn/Ag)
Maximum Insertion Loss
    • .5 dB
    • .7 dB
    • 1 dB
    • 1.2 dB
    • 1.3 dB
    • 1.32 dB
    • 1.4 dB
    • 1.5 dB
    • 1.6 dB
    • 1.7 dB
    • 1.8 dB
    • 1.9 dB
    • 10.5 dB
    • 11.3 dB
    • 2 dB
    • 2.1 dB
    • 2.2 dB
    • 2.3 dB
    • 2.4 dB
    • 2.5 dB
    • 2.6 dB
    • 2.7 dB
    • 2.8 dB
    • 20 dB
    • 21.7 dB
    • 3 dB
    • 3.1 dB
    • 3.2 dB
    • 3.25 dB
    • 3.3 dB
    • 3.4 dB
    • 3.5 dB
    • 3.6 dB
    • 3.7 dB
    • 3.8 dB
    • 31.7 dB
    • 4 dB
    • 4.2 dB
    • 4.3 dB
    • 4.4 dB
    • 4.5 dB
    • 4.6 dB
    • 4.7 dB
    • 4.8 dB
    • 42.5 dB
    • 5 dB
    • 5.1 dB
    • 5.2 dB
    • 5.7 dB
    • 5.8 dB
    • 6 dB
    • 6.5 dB
    • 7 dB
    • 7.5 dB
    • 7.8 dB
    • 8 dB
    • 8.5 dB
Additional Features
    • 0-26.5 GHZ SPECIFIED FREQUENCY RANGE
    • 1.85 MM
    • 2.4 MM-F, I/P POWER-MAX(PEAK)=200W
    • 2.4 MM-F; 2.4 MM-M, I/P POWER-MAX(PEAK)=200W
    • 2.92 MM-F
    • 2.92 MM-F; 2.92 MM-M, I/P POWER-MAX(PEAK)=500W
    • 2.92 MM-F; N-F, I/P POWER-MAX(PEAK)=5000W, MODE FREE OPERATION TO 10 GHZ
    • 3.5 MM, I/P POWER-MAX(PEAK)=500W
    • 3.5 MM-F, I/P POWER-MAX(PEAK)=1000W
    • 3.5 MM-F; 3.5 MM-M, I/P POWER-MAX(PEAK)=1000W
    • 3.5 MM-F; N-F, I/P POWER-MAX(PEAK)=1000W
    • 3.5 MM-F; N-M, I/P POWER-MAX(PEAK)=1000W
    • 3.5 MM-M, I/P POWER-MAX(PEAK)=1000W
    • 3.5 MM-M; N-F, I/P POWER-MAX(PEAK)=1000W
    • 3.5 MM-M; N-M, I/P POWER-MAX(PEAK)=1000W
    • 7/16-F, I/P POWER-MAX(PEAK)=10000W
    • 7/16-F; 7/16-M, I/P POWER-MAX(PEAK)=10000W
    • 7/16-F; N-F, I/P POWER-MAX(PEAK)=10000W
    • 7/16-F; N-M, I/P POWER-MAX(PEAK)=10000W
    • 7/16-M, I/P POWER-MAX(PEAK)=10000W
    • BNC, I/P POWER-MAX(PEAK)=100W
    • BNC-F; BNC-M
    • BNC-F; BNC-M, I/P POWER-MAX(PEAK)=500W
    • CMOS COMPATIBLE
    • CMOS COMPATIBLE, I/P POWER-MAX(PEAK)=1.26W
    • F-F; SMA-F, I/P POWER-MAX(PEAK)=250W
    • HIGH RELIABILITY
    • HIGH RELIABILITY, I/P POWER-MAX(PEAK)=2W
    • I/P POWER-MAX (PEAK)=1W
    • I/P POWER-MAX(PEAK)=1.26W
    • I/P POWER-MAX(PEAK)=100W
    • I/P POWER-MAX(PEAK)=1W
    • I/P POWER-MAX(PEAK)=200W
    • I/P POWER-MAX(PEAK)=25W
    • I/P POWER-MAX(PULSE)=0.5W
    • I/P POWER-MAX(PULSE)=0.63W
    • I/P POWER-MAX(PULSE)=1.26W
    • LOW NOISE
    • N
    • N-F, I/P POWER-MAX(PEAK)=10000W
    • N-F, I/P POWER-MAX(PEAK)=1000W
    • N-F; N-M
    • N-F; N-M, I/P POWER-MAX(PEAK)=10000W
    • N-F; N-M, I/P POWER-MAX(PEAK)=1000W
    • N-F; N-M, I/P POWER-MAX(PEAK)=1000W, USABLE TO 5000 MHZ
    • N-F; N-M, I/P POWER-MAX(PEAK)=100W
    • N-F; N-M, I/P POWER-MAX(PEAK)=125W
    • N-F; N-M, I/P POWER-MAX(PEAK)=500W
    • N-F; SMA-F, I/P POWER-MAX(PEAK)=250W
    • N-F; SMK-M, I/P POWER-MAX(PEAK)=10000W; MIL-STD-348
    • N-M, I/P POWER-MAX(PEAK)=10000W
    • N-M, I/P POWER-MAX(PEAK)=1000W
    • SMA
    • SMA 2.9-F; SMA 2.9-M, I/P POWER-MAX(PEAK)=100W
    • SMA, CMOS COMPATIBLE
    • SMA, HIGH RELIABILITY
    • SMA, I/P POWER-MAX(PEAK)=100W
    • SMA, I/P POWER-MAX(PEAK)=500W
    • SMA-F, HIGH RELIABILITY
    • SMA-F, TTL COMPATIBLE
    • SMA-F; SMA-M
    • SMA-F; SMA-M, I/P POWER-MAX(PEAK)=1000W
    • SMA-F; SMA-M, I/P POWER-MAX(PEAK)=100W
    • SMA-F; SMA-M, I/P POWER-MAX(PEAK)=125W
    • SMA-F; SMA-M, I/P POWER-MAX(PEAK)=250W
    • SMA-F; SMA-M, I/P POWER-MAX(PEAK)=5000W
    • SMA-F; SMA-M, I/P POWER-MAX(PEAK)=500W
    • SMA-F; SMA-M, USABLE TO 30 GHZ, I/P POWER-MAX(PEAK)=500W
    • SMA-M, I/P POWER-MAX(PEAK)=1000W
    • SMA-M, I/P POWER-MAX(PEAK)=500W
    • SMA; I/P POWER-MAX(PEAK)=100W
    • SMC
    • SMK 2.92 MM-F; N-F, I/P POWER-MAX(PEAK)=5000W
    • SMK 2.92 MM-F; N-M, I/P POWER-MAX(PEAK)=10000W
    • SMK 2.92 MM-F; SMK 2.92 MM-M, I/P POWER-MAX(PEAK)=5000W
    • SMK-F; N-M, I/P POWER-MAX(PEAK)=10000W; MIL-STD-348
    • SMK-F; SMK-M, I/P POWER-MAX(PEAK)=10000W
    • SMK-M; N-M, I/P POWER-MAX(PEAK)=10000W; MIL-STD-348
    • SMP-M, I/P POWER-MAX(PEAK)=250W
    • TNC-F; TNC-M, I/P POWER-MAX(PEAK)=1000W
    • TTL COMPATIBLE
    • USABLE TO 10000 MHZ
JESD-609 Code
    • e0
    • e2
    • e3
    • e4
Minimum Operating Frequency
    • -40 MHz
    • .001 MHz
    • .009 MHz
    • .3 MHz
    • 0 MHz
    • 1 MHz
    • 10 MHz
    • 100 MHz
    • 1000 MHz
    • 10000 MHz
    • 12400 MHz
    • 17000 MHz
    • 1895 MHz
    • 2000 MHz
    • 20000 MHz
    • 2200 MHz
    • 2400 MHz
    • 250 MHz
    • 350 MHz
    • 36000 MHz
    • 4 MHz
    • 400 MHz
    • 450 MHz
    • 5 MHz
    • 50 MHz
    • 500 MHz
    • 5000 MHz
    • 600 MHz
    • 700 MHz
    • 7000 MHz
    • 70000 MHz
    • 750 MHz
    • 8000 MHz
Maximum Operating Frequency
    • .5 MHz
    • 10000 MHz
    • 12400 MHz
    • 1250 MHz
    • 13000 MHz
    • 14000 MHz
    • 1500 MHz
    • 18000 MHz
    • 1918 MHz
    • 2000 MHz
    • 20000 MHz
    • 2200 MHz
    • 22000 MHz
    • 2400 MHz
    • 2500 MHz
    • 25000 MHz
    • 26000 MHz
    • 26500 MHz
    • 2700 MHz
    • 27000 MHz
    • 28000 MHz
    • 300 MHz
    • 3000 MHz
    • 30000 MHz
    • 31000 MHz
    • 32000 MHz
    • 33000 MHz
    • 3700 MHz
    • 3800 MHz
    • 4000 MHz
    • 40000 MHz
    • 4200 MHz
    • 43500 MHz
    • 45000 MHz
    • 5000 MHz
    • 50000 MHz
    • 5500 MHz
    • 55000 MHz
    • 6000 MHz
    • 60000 MHz
    • 65 MHz
    • 67000 MHz
    • 7000 MHz
    • 8000 MHz
    • 85 MHz
    • 8500 MHz
    • 86000 MHz
Reset All
Part RoHS Manufacturer RF or Microwave Device Type Mounting Feature No. of Terminals Package Body Material Technology Screening Level Maximum Input Power (CW) Maximum Voltage Standing Wave Ratio Nominal Attenuation Maximum Supply Current Construction Power Supplies (V) Package Equivalence Code Characteristic Impedance Sub-Category Maximum Operating Temperature Minimum Operating Temperature Terminal Finish Maximum Insertion Loss Additional Features JESD-609 Code Minimum Operating Frequency Maximum Operating Frequency

HMC941A

Analog Devices

VARIABLE ATTENUATOR

9

GAAS

27 dBm

15.5 dB

7 mA

COMPONENT

+-5

DIE OR CHIP

50 ohm

85 Cel

-55 Cel

5.1 dB

100 MHz

30000 MHz

HMC1018ALP4E

Analog Devices

VARIABLE ATTENUATOR

26.99 dBm

31 dB

COMPONENT

50 ohm

85 Cel

-40 Cel

MATTE TIN

8 dB

CMOS COMPATIBLE

e3

100 MHz

30000 MHz

HMC273AMS10GE

Analog Devices

VARIABLE ATTENUATOR

26.02 dBm

31 dB

COMPONENT

85 Cel

-40 Cel

MATTE TIN

3.5 dB

e3

700 MHz

3800 MHz

HMC985A

Analog Devices

VARIABLE ATTENUATOR

SURFACE MOUNT

GAAS

30 dBm

40 dB

COMPONENT

DIE OR CHIP

50 ohm

85 Cel

-40 Cel

4 dB

20000 MHz

50000 MHz

HMC1019ALP4E

Analog Devices

VARIABLE ATTENUATOR

SURFACE MOUNT

24

PLASTIC/EPOXY

GAAS

27 dBm

15.5 dB

6.5 mA

COMPONENT

+-5

LCC24,.16SQ,20

50 ohm

85 Cel

-40 Cel

MATTE TIN

6.5 dB

CMOS COMPATIBLE

e3

100 MHz

30000 MHz

HMC470ATCPZ-EP-PT

Analog Devices

VARIABLE ATTENUATOR

SURFACE MOUNT

16

PLASTIC/EPOXY

25 dBm

31 dB

COMPONENT

3/5

LCC16,.12SQ,20

50 ohm

125 Cel

-55 Cel

2 dB

CMOS COMPATIBLE

100 MHz

3000 MHz

HMC470ATCPZ-EP-RL7

Analog Devices

VARIABLE ATTENUATOR

SURFACE MOUNT

16

PLASTIC/EPOXY

25 dBm

31 dB

COMPONENT

3/5

LCC16,.12SQ,20

50 ohm

125 Cel

-55 Cel

2 dB

CMOS COMPATIBLE

100 MHz

3000 MHz

HMC939ATCPZ-EP-PT

Analog Devices

VARIABLE ATTENUATOR

SURFACE MOUNT

24

PLASTIC/EPOXY

27 dBm

31 dB

6.5 mA

COMPONENT

+-5

LCC24,.16SQ,20

50 ohm

125 Cel

-55 Cel

8 dB

100 MHz

33000 MHz

HMC939ATCPZ-EP-R7

Analog Devices

VARIABLE ATTENUATOR

SURFACE MOUNT

24

PLASTIC/EPOXY

27 dBm

31 dB

6.5 mA

COMPONENT

+-5

LCC24,.16SQ,20

50 ohm

125 Cel

-55 Cel

8 dB

100 MHz

33000 MHz

HMC939ALP4ETR

Analog Devices

VARIABLE ATTENUATOR

SURFACE MOUNT

24

GAAS

27 dBm

31 dB

6.5 mA

COMPONENT

+-5

LCC24,.16SQ,20

50 ohm

85 Cel

-40 Cel

8 dB

100 MHz

33000 MHz

HMC8073LP3DE

Analog Devices

VARIABLE ATTENUATOR

SURFACE MOUNT

16

PLASTIC/EPOXY

30 dBm

31.5 dB

COMPONENT

5

LCC16,.12SQ,20

50 ohm

85 Cel

-40 Cel

NICKEL PALLADIUM GOLD

2.2 dB

CMOS COMPATIBLE

e4

600 MHz

3000 MHz

ADRF5720BCCZN-R7

Analog Devices

VARIABLE ATTENUATOR

SURFACE MOUNT

24

PLASTIC/EPOXY

CMOS

27.99 dBm

31.5 dB

COMPONENT

+-3.3

LCC24,.16SQ,20

50 ohm

105 Cel

-40 Cel

NICKEL PALLADIUM GOLD

CMOS COMPATIBLE, I/P POWER-MAX(PEAK)=1.26W

e4

.009 MHz

40000 MHz

ADRF5720BCCZN

Analog Devices

VARIABLE ATTENUATOR

SURFACE MOUNT

24

PLASTIC/EPOXY

CMOS

27.99 dBm

31.5 dB

COMPONENT

+-3.3

LCC24,.16SQ,20

50 ohm

105 Cel

-40 Cel

CMOS COMPATIBLE, I/P POWER-MAX(PEAK)=1.26W

.009 MHz

40000 MHz

ADRF5721BCCZN-R7

Analog Devices

VARIABLE ATTENUATOR

SURFACE MOUNT

16

PLASTIC/EPOXY

27 dBm

30 dB

COMPONENT

+-3.3

LCC16,.1SQ,16

50 ohm

105 Cel

-40 Cel

.009 MHz

40000 MHz

ADRF5721BCCZN

Analog Devices

VARIABLE ATTENUATOR

SURFACE MOUNT

16

PLASTIC/EPOXY

27 dBm

30 dB

COMPONENT

+-3.3

LCC16,.1SQ,16

50 ohm

105 Cel

-40 Cel

.009 MHz

40000 MHz

ADRF5731BCCZN-R7

Analog Devices

VARIABLE ATTENUATOR

SURFACE MOUNT

16

PLASTIC/EPOXY

26.99 dBm

30 dB

COMPONENT

+-3.3

LCC16,.1SQ,16

50 ohm

105 Cel

-40 Cel

3.5 dB

CMOS COMPATIBLE, I/P POWER-MAX(PEAK)=1.26W

100 MHz

40000 MHz

ADRF5731BCCZN

Analog Devices

VARIABLE ATTENUATOR

SURFACE MOUNT

16

PLASTIC/EPOXY

26.99 dBm

30 dB

COMPONENT

+-3.3

LCC16,.1SQ,16

50 ohm

105 Cel

-40 Cel

3.5 dB

CMOS COMPATIBLE, I/P POWER-MAX(PEAK)=1.26W

100 MHz

40000 MHz

HMC624ACPSZ-EP-PT

Analog Devices

VARIABLE ATTENUATOR

SURFACE MOUNT

24

PLASTIC/EPOXY

GAAS

25 dBm

31.5 dB

COMPONENT

3/5

LCC24,.16SQ,20

105 Cel

-55 Cel

3.8 dB

100 MHz

6000 MHz

HMC624ACPSZ-EP-RL7

Analog Devices

VARIABLE ATTENUATOR

SURFACE MOUNT

24

PLASTIC/EPOXY

GAAS

25 dBm

31.5 dB

COMPONENT

3/5

LCC24,.16SQ,20

105 Cel

-55 Cel

3.8 dB

100 MHz

6000 MHz

HMC425ALP3ETR

Analog Devices

VARIABLE ATTENUATOR

SURFACE MOUNT

16

PLASTIC/EPOXY

GAAS

27 dBm

31.5 dB

COMPONENT

5

LCC16,.12SQ,20

50 ohm

85 Cel

-40 Cel

Matte Tin (Sn) - annealed

4.7 dB

e3

2200 MHz

8000 MHz

HMC346ALC3BTR

Analog Devices

VARIABLE ATTENUATOR

SURFACE MOUNT

12

CERAMIC

GAAS

18 dBm

24 dB

COMPONENT

LCC12,.12SQ,20

50 ohm

85 Cel

-40 Cel

GOLD OVER NICKEL

4 dB

e4

0 MHz

18000 MHz

HMC424A-SX

Analog Devices

VARIABLE ATTENUATOR

SURFACE MOUNT

9

GAAS

25 dBm

1.67

31.5 dB

5 mA

COMPONENT

-5

DIE OR CHIP

50 ohm

85 Cel

-40 Cel

4.6 dB

100 MHz

13000 MHz

HMC346ALP3ETR

Analog Devices

VARIABLE ATTENUATOR

SURFACE MOUNT

16

PLASTIC/EPOXY

GAAS

18 dBm

1.92

30 dB

COMPONENT

LCC16,.12SQ,20

50 ohm

85 Cel

-40 Cel

Matte Tin (Sn) - annealed

3.2 dB

e3

0 MHz

14000 MHz
RF/Microwave Attenuators

RF/Microwave attenuators are electronic devices designed to reduce the strength or amplitude of an RF or microwave signal without significantly affecting its waveform. They are used in a variety of applications, including signal conditioning, power level control, and impedance matching.

There are various types of RF/Microwave attenuators, including fixed, variable, and programmable. Fixed attenuators provide a fixed amount of attenuation and are used in applications where the signal level needs to be reduced by a specific amount. Variable attenuators allow for the adjustment of the signal level by rotating a knob or sliding a lever, and are used in applications where the signal level needs to be continuously adjusted. Programmable attenuators can be controlled electronically and offer greater flexibility in adjusting the signal level.

Attenuators can be designed using different technologies, such as resistive, capacitive, and diode-based. Resistive attenuators use resistors to dissipate energy and reduce signal strength. Capacitive attenuators use capacitors to block high-frequency signals and allow low-frequency signals to pass through. Diode-based attenuators use PIN diodes or varactor diodes to control signal strength.

RF/Microwave attenuators are used in a wide range of applications, including in wireless communication systems, test and measurement equipment, radar systems, and satellite communication systems. They play an important role in controlling signal levels and ensuring the integrity of signals in these systems.