SURFACE MOUNT RF/Microwave Mixers 50

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Minimum Operating Temperature	Terminal Finish	Maximum Conversion Loss	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
TFF1013HN/N1,115	NXP Semiconductors		SURFACE MOUNT	16	PLASTIC/EPOXY						5	LCC16,.1X.14,20		RF/Microwave Mixers	85 Cel	-40 Cel
AD831AP-REEL7	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	20	PLASTIC/EPOXY	BIPOLAR				MODULE	+-5	LDCC20,.4SQ	50 ohm	RF/Microwave Mixers	85 Cel	-40 Cel	TIN LEAD			e0
AD831AP	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	20	PLASTIC/EPOXY	BIPOLAR				MODULE	+-5	LDCC20,.4SQ	50 ohm	RF/Microwave Mixers	85 Cel	-40 Cel	TIN LEAD			e0
ADRF6604ACPZ-R7	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	40	PLASTIC/EPOXY	BICMOS				COMPONENT	5	LCC40,.24SQ,20	50 ohm	RF/Microwave Mixers	85 Cel	-40 Cel	MATTE TIN			e3	2500 MHz	2900 MHz
AMMP-6545-BLKG	Broadcom	DOUBLE BALANCED	SURFACE MOUNT	8	PLASTIC/EPOXY		25 dBm			COMPONENT		LCC8,.2SQ,28	50 ohm	RF/Microwave Mixers	125 Cel	-55 Cel		12 dB			18000 MHz	40000 MHz
AMMP-6545-TR1G	Broadcom	DOUBLE BALANCED	SURFACE MOUNT	8	PLASTIC/EPOXY		25 dBm			COMPONENT		LCC8,.2SQ,28	50 ohm	RF/Microwave Mixers	125 Cel	-55 Cel		12 dB			18000 MHz	40000 MHz
AMMP-6545-TR2G	Broadcom	DOUBLE BALANCED	SURFACE MOUNT	8	PLASTIC/EPOXY		25 dBm			COMPONENT		LCC8,.2SQ,28	50 ohm	RF/Microwave Mixers	125 Cel	-55 Cel		12 dB			18000 MHz	40000 MHz
ADL5356ACPZ-R7	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	36	PLASTIC/EPOXY	BICMOS				COMPONENT	5	LCC36,.25SQ,20	50 ohm	RF/Microwave Mixers	85 Cel	-40 Cel	MATTE TIN		HIGH ISOLATION	e3	1200 MHz	2500 MHz
BGA2022,115	NXP Semiconductors	DOUBLE BALANCED	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	10 dBm	2	8 mA	COMPONENT	2.8	TSSOP6,.08	50 ohm	RF/Microwave Mixers			Tin (Sn)			e3	880 MHz	2450 MHz
ADL5365ACPZ-R7	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	20	PLASTIC/EPOXY	BICMOS	20 dBm			COMPONENT	3.3/5	LCC20,.20SQ,25	50 ohm	RF/Microwave Mixers	85 Cel	-40 Cel	Matte Tin (Sn)	8.4 dB	HIGH ISOLATION	e3	1200 MHz	2500 MHz
ADL5367ACPZ-R7	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	20	PLASTIC/EPOXY	BICMOS	20 dBm			COMPONENT	3.3/5	LCC20,.20SQ,25	50 ohm	RF/Microwave Mixers	85 Cel	-40 Cel	MATTE TIN	8.5 dB	HIGH ISOLATION	e3	500 MHz	1700 MHz
AD831APZ	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	20	PLASTIC/EPOXY	BIPOLAR				MODULE	+-5	LDCC20,.4SQ	50 ohm	RF/Microwave Mixers	85 Cel	-40 Cel	MATTE TIN			e3
AD8343ARUZ	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	14	PLASTIC/EPOXY	BIPOLAR		2	75 mA	COMPONENT	5	TSSOP14,.25	50 ohm	RF/Microwave Mixers	85 Cel	-40 Cel	MATTE TIN			e3	0 MHz	2500 MHz
AD831APZ-REEL7	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	20	PLASTIC/EPOXY	BIPOLAR				MODULE	+-5	LDCC20,.4SQ	50 ohm	RF/Microwave Mixers	85 Cel	-40 Cel	MATTE TIN			e3
ADL5355ACPZ-R7	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	20	PLASTIC/EPOXY	BICMOS	20 dBm			COMPONENT	3.3/5	LCC20,.20SQ,25	50 ohm	RF/Microwave Mixers	85 Cel	-40 Cel	MATTE TIN		HIGH ISOLATION	e3	1200 MHz	2500 MHz
ADL5355ACPZ-WP	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	20	PLASTIC/EPOXY	BICMOS	20 dBm			COMPONENT	3.3/5	LCC20,.20SQ,25	50 ohm	RF/Microwave Mixers	85 Cel	-40 Cel	Matte Tin (Sn)		HIGH ISOLATION	e3	1200 MHz	2500 MHz
ADL5357ACPZ-R7	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	20	PLASTIC/EPOXY	BICMOS	20 dBm			COMPONENT	3.3/5	LCC20,.20SQ,25	50 ohm	RF/Microwave Mixers	85 Cel	-40 Cel	Matte Tin (Sn)		HIGH ISOLATION	e3	500 MHz	1700 MHz
ADL5357ACPZ-WP	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	20	PLASTIC/EPOXY	BICMOS	20 dBm			COMPONENT	3.3/5	LCC20,.20SQ,25	50 ohm	RF/Microwave Mixers	85 Cel	-40 Cel	Matte Tin (Sn)		HIGH ISOLATION	e3	500 MHz	1700 MHz
AMMP-6546-BLKG	Broadcom	TRIPLE BALANCED	SURFACE MOUNT	8	PLASTIC/EPOXY		25 dBm			COMPONENT		LCC8,.2SQ,28	50 ohm	RF/Microwave Mixers				12 dB			18000 MHz	40000 MHz
AMMP-6546-TR1G	Broadcom	TRIPLE BALANCED	SURFACE MOUNT	8	PLASTIC/EPOXY		25 dBm			COMPONENT		LCC8,.2SQ,28	50 ohm	RF/Microwave Mixers				12 dB			18000 MHz	40000 MHz
AMMP-6546-TR2G	Broadcom	TRIPLE BALANCED	SURFACE MOUNT	8	PLASTIC/EPOXY		25 dBm			COMPONENT		LCC8,.2SQ,28	50 ohm	RF/Microwave Mixers				12 dB			18000 MHz	40000 MHz
HMC553AG-SX	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	7		GAAS	25 dBm			COMPONENT		DIE OR CHIP	50 ohm		85 Cel	-40 Cel		10 dB			6000 MHz	14000 MHz
HMC557ALC4TR-R5	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	24	CERAMIC	GAAS						LCC24,.16SQ,20		RF/Microwave Mixers	85 Cel	-40 Cel	Tungsten/Nickel/Gold (W/Ni/Au)
HMC557ALC4TR	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	24	CERAMIC	GAAS						LCC24,.16SQ,20		RF/Microwave Mixers	85 Cel	-40 Cel	Tungsten/Nickel/Gold (W/Ni/Au)
HMC557ALC4	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	24	CERAMIC	GAAS						LCC24,.16SQ,20		RF/Microwave Mixers	85 Cel	-40 Cel	Tungsten/Nickel/Gold (W/Ni/Au)
HMC520ALC4	Analog Devices	IMAGE REJECTION	SURFACE MOUNT	24	CERAMIC	GAAS	20 dBm			COMPONENT		LCC24,.16SQ,20	50 ohm		85 Cel	-40 Cel	Gold (Au) - with Nickel (Ni) barrier	10 dB		e4	6000 MHz	10000 MHz
HMC524ALC3B	Analog Devices	IMAGE REJECTION	SURFACE MOUNT	12	CERAMIC	GAAS	20 dBm			COMPONENT		LCC12,.12SQ,20	50 ohm		85 Cel	-40 Cel	Tungsten/Nickel/Gold (W/Ni/Au)	13 dB			22000 MHz	32000 MHz
HMC553ALC3B	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	12	CERAMIC	GAAS	25 dBm			COMPONENT		LCC12,.12SQ,20	50 ohm		85 Cel	-40 Cel		10 dB			6000 MHz	14000 MHz
HMC213BMS8GE	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS	13 dBm			COMPONENT		TSSOP8,.19			85 Cel	-40 Cel		10 dB			1500 MHz	4500 MHz
HMC260ALC3B	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	12	CERAMIC	GAAS	27 dBm		3 mA	COMPONENT		LCC12,.12SQ,20	50 ohm		85 Cel	-40 Cel		12 dB			10000 MHz	26000 MHz
HMC525ALC4	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	24	CERAMIC	GAAS	20 dBm			COMPONENT		LCC24,.16SQ,20	50 ohm		85 Cel	-40 Cel	TUNGSTEN NICKEL GOLD	11 dB			4000 MHz	8500 MHz
HMC558ALC3B	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	12	CERAMIC		25 dBm			COMPONENT		LCC12,.12SQ,20	50 ohm		85 Cel	-40 Cel	Tungsten/Nickel/Gold (W/Ni/Au)	9.5 dB			5500 MHz	14000 MHz
HMC7587-SX	Analog Devices	IMAGE REJECTION	SURFACE MOUNT	40		GAAS				COMPONENT		DIE OR CHIP	50 ohm		85 Cel	-55 Cel					81000 MHz	86000 MHz
HMC7587	Analog Devices	IMAGE REJECTION	SURFACE MOUNT	40		GAAS				COMPONENT		DIE OR CHIP	50 ohm		85 Cel	-55 Cel					81000 MHz	86000 MHz
HMC485AMS8GE	Analog Devices	SINGLE BALANCED	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS	27 dBm			COMPONENT	5	TSSOP8,.19			85 Cel	-40 Cel		11 dB	HIGH DYNAMIC RANGE		1700 MHz	2400 MHz
HMC520ALC4TR-R5	Analog Devices	IMAGE REJECTION	SURFACE MOUNT	24	CERAMIC	GAAS	20 dBm			COMPONENT		LCC24,.16SQ,20	50 ohm		85 Cel	-40 Cel	Gold (Au) - with Nickel (Ni) barrier	10 dB		e4	6000 MHz	10000 MHz
HMC520ALC4TR	Analog Devices	IMAGE REJECTION	SURFACE MOUNT	24	CERAMIC	GAAS	20 dBm			COMPONENT		LCC24,.16SQ,20	50 ohm		85 Cel	-40 Cel	Gold (Au) - with Nickel (Ni) barrier	10 dB		e4	6000 MHz	10000 MHz
HMC558ALC3BTR-R5	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	12	CERAMIC		25 dBm			COMPONENT		LCC12,.12SQ,20	50 ohm		85 Cel	-40 Cel		9.5 dB			5500 MHz	14000 MHz
HMC558ALC3BTR	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	12	CERAMIC		25 dBm			COMPONENT		LCC12,.12SQ,20	50 ohm		85 Cel	-40 Cel	Tungsten/Nickel/Gold (W/Ni/Au)	9.5 dB			5500 MHz	14000 MHz
HMC260ALC3BTR-R5	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	12	CERAMIC	GAAS	27 dBm		3 mA	COMPONENT		LCC12,.12SQ,20	50 ohm		85 Cel	-40 Cel		12 dB			10000 MHz	26000 MHz
HMC260ALC3BTR	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	12	CERAMIC	GAAS	27 dBm		3 mA	COMPONENT		LCC12,.12SQ,20	50 ohm		85 Cel	-40 Cel		12 dB			10000 MHz	26000 MHz
HMC524ALC3BTR-R5	Analog Devices	IMAGE REJECTION	SURFACE MOUNT	12	CERAMIC	GAAS	20 dBm			COMPONENT		LCC12,.12SQ,20	50 ohm		85 Cel	-40 Cel		13 dB			22000 MHz	32000 MHz
HMC524ALC3BTR	Analog Devices	IMAGE REJECTION	SURFACE MOUNT	12	CERAMIC	GAAS	20 dBm			COMPONENT		LCC12,.12SQ,20	50 ohm		85 Cel	-40 Cel		13 dB			22000 MHz	32000 MHz
HMC553ALC3BTR-R5	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	12	CERAMIC	GAAS	25 dBm			COMPONENT		LCC12,.12SQ,20	50 ohm		85 Cel	-40 Cel		10 dB			6000 MHz	14000 MHz
HMC553ALC3BTR	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	12	CERAMIC	GAAS	25 dBm			COMPONENT		LCC12,.12SQ,20	50 ohm		85 Cel	-40 Cel		10 dB			6000 MHz	14000 MHz
HMC525ALC4TR-R5	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	24	CERAMIC	GAAS	20 dBm			COMPONENT		LCC24,.16SQ,20	50 ohm		85 Cel	-40 Cel		11 dB			4000 MHz	8500 MHz
HMC525ALC4TR	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	24	CERAMIC	GAAS	20 dBm			COMPONENT		LCC24,.16SQ,20	50 ohm		85 Cel	-40 Cel		11 dB			4000 MHz	8500 MHz
HMC553AG	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	7		GAAS	25 dBm			COMPONENT		DIE OR CHIP	50 ohm		85 Cel	-40 Cel		10 dB			6000 MHz	14000 MHz

RF/Microwave Mixers

RF/microwave mixers are electronic devices used in radio frequency (RF) and microwave systems to convert one frequency to another. They perform frequency translation by multiplying two input signals, a local oscillator (LO) signal and a radio frequency (RF) or intermediate frequency (IF) signal, to produce an output signal that has the sum and difference frequencies of the inputs.

RF/microwave mixers are commonly used in a variety of applications, including frequency conversion, phase detection, modulation and demodulation, and signal generation. They are widely used in telecommunications, radar systems, navigation systems, and satellite communication systems.

RF/microwave mixers are available in various types, including diode mixers, transistor mixers, and monolithic microwave integrated circuit (MMIC) mixers. The choice of mixer depends on the application requirements, such as the desired frequency range, signal bandwidth, conversion gain, and noise figure.